MCR. 1A (Amperes) MCR22 Series 1.5A. Product Model Reference & Naming TO-92 MCR22-8 MCR22-10 MCR22-12 MCR22-12S. 200μA MCR22-6S MCR22-12M.
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1 1.5 Series SCR: 1.5 igh Sensitive SCRs DESCRIPTION ighly sensitive triggering levels, the BT169 Series SCRs is suitable for all applications, where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar prtection in low power supplies... : : : : MCR22-8: MCR22-6MCR22-4MCR22-3MCR22-2MCR100-6MCR100-8BT169CR03 Product Model Reference & Naming 1 (mperes) 200V 400V 600V 800V 1000V I T TO-92 MCR22-4 MCR22-6 MCR22-8 MCR22-10 MCR22-12 SOT-23 MM M MMCR22-4 MCR22-4M MMCR22-6 MCR22-6M MMCR22-8 MCR22-8M MMCR22-10 MCR22-10M MMCR22-12 MCR22-12M 200μ I T Class S MCR22-4S MCR22-6S MCR22-8S MCR22-10S MCR22-12S Remarks () PINNIN: Insulated Package 3-Leads Plastic Packaging Pin in Symbol and Description K Cathode ate node Tab Pin Polarity & raphic symbol TO SOT (3) K (1) (2) MCR 22-8 M OI ELECTRONICS CO.,LTD. Bipolar-Thyristor SCR 1.5 2=50V 4=200V 6=400V 8=600V 10=800V 12=1000V : TO-92 Or no letters M: S: MM: SOT-23 Model prefix MM I T Class Item B C D E F J K I T 1~5 5~10 10~30 30~60 40~100 50~200 1~ ~45 40~200 OI ELECTRONICS CO., LTD. 16
2 1.5 Series SCR: 1.5 igh Sensitive SCRs BSOLUTE RTINs (Limiting Values) Value I T(RMS) On-State RMS Current ll Conduction ngles 1.5 I TSM Peak Non-Repetitive Surge Current T j =25, 1/2 Cycle, Sine Wave, 60 z 15 I M Forward Peak ate Current T =25, Pulse Width1.0μs 0.2 I 2 t I 2 t for fusing t=8.3ms ses P M P (V) Forward Peak ate Power Forward verage ate Power Pulse Width1μS, T =25 t=8.3ms, T = W V DRM V RRM Peak Repetitive OffState Voltage (R K =IK, T J =110, Sine Wave, 50~60 z, ate Open) See Reference Feature Description 200~1000 V V RM Reverse Peak ate Voltage Pulse Width1.0μs, T = T j Operating Junction Temperature Range -40~+110 T stg Storage Temperature Range -40~+150 T L Maximum Lead Temperature for Soldering Purposes 1/8,from Case for 10 Seconds 260 ELECTRICL CRCTERISTICs (Tj=25 Unless Otherwise Noted) Min Typ Max ate Trigger Current T I C =25 T V D =6V, R L =100 T C = μ I olding Current (V K =12V, ate Open) T C =25 T C = m V T ate Trigger Voltage V K =7V, R L =100 T C =25 T C = V D ate Non-Trigger Voltage V K =12V, R L =100, T j = V V TM Peak Forward On-State Voltage I TM =1, tp=380μs, T j = I DRM I RRM Peak Reverse Blocking Current (V R =V RRM, R K =1K) T j =25 T j = μ DYNMIC CRCTERISTICS Min Typ Max dv/dt V D =67%V DRM, R K =1K, T j = V/μs TERML CRCTERISTICS Min Typ Max R th(j-c) Thermal Resistance, Junction to Case TO /W R th(j-c) Thermal Resistance, Junction to mbient TO /W (1) Pulse Width = 1.0ms, Duty Cycle 1%. (2) R K Current not included in measurement. OI ELECTRONICS CO., LTD. 26
3 1.5 Series SCR: 1.5 igh Sensitive SCRs Electrical characteristics & Typical characteristics 36 OI ELECTRONICS CO., LTD.
4 1.5 Series SCR: 1.5 igh Sensitive SCRs PCKE MECNICL DT mm & inch XXX XXX KK B C D TO-92 (TO-226) Package Code: J K N P V XXX: Part Number : Chip Code XXX KK: : LOO XXXXXX KK b c D E E XXX: Part Number e e BSC BSC XXX: KK: LOO SOT-23-3L Package Code: MM L Packaging Specifications(). Bag TO-92 (TO-226) Reel SOT-23-3L QTY 1,000 Pcs 10,000 Pcs 100,000 Pcs 3,000 Pcs 45,000 Pcs 180,000 Pcs Size mm mm mm mm.W. 197 g 2132 g g 113 g 1932 g 8639 g OI ELECTRONICS CO., LTD. 46
5 1.5 Series SCR: 1.5 igh Sensitive SCRs PCKE MECNICL DT mm & inch 4.40 B XXXXXX KK C D E F Package Code: M 1.50 BSC BSC 3.00 BSC BSC J K L XXX: Part Number XXX: KK: LOO XXXXXX KK B B C D E F 4.60 TYP. F TYP TYP TYP : OI XXXXXX: Part Number Package Code: S J K 0.90 TYP TYP. XXXXXX: KK: LOO Packaging Specifications. Reel Reel QTY 1,000 Pcs 10,000 Pcs 40,000 Pcs 2,500 Pcs 5,000 Pcs 40,000 Pcs Size mm mm mm mm.W. 158 g 1723 g 7.8 Kg g g OI ELECTRONICS CO., LTD. 56
6 1.5 Series SCR: 1.5 igh Sensitive SCRs Manufacturers version information KK Product Data KK Product Data KK Product Data-1.2 KK WRN, Letters, patterns, are officially registered my trademark counterfeiting, theft are all violations, violators will be held liable! SENZEN OI ELECTRONICS CO., LTD. TEL: TEL: FX: : 66 OI ELECTRONICS CO., LTD.
C106 Series High Sensitive SCRs
is lassivated PNPN devices designed for high volume consumerapplications such as temperature, light, and speed control; process andremote control, and warning systems where reliability of operation isimportant.
A 80 I GT 80A. 3Q-TRIACs IGT 80A. BTA80-BW Series Specially Varieties 3Q-Triacs
DESCRIPTION Triac provides good commutation capability, which is suitable for general purpose C switching and voltage regulation, and can be used in static relays, heating regulation, induction motor stating
: PNPN DB3 : MCRB25D MCRB25M MCRB25N MCRB25H. Pin Polarity Circuit Diagram TO-220F, TO-220AB, TO-263 (D 2 PAK)
Designed primarily for half wave ac control applications, such asmotor controls, heating controls, and power supplies; or whereverhalf wave, silicon gate controlled devices are needed. Blocking Voltage
A I GT. BTA40-BTA41 Series Specially Varieties 3Q-Triacs TG-C TG40C60 TG40C80 RD-91 TOP3. 3Q-TRIACs. Product Model Reference & Naming
40 Specially Varieties 3Q-Triacs DESCRIPTION High current density due to double mesa technology; SIPOS and Glass Passivation. BT40, BT41, TG40C Series triacs is suitable for general purpose C switching.
MCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MCR106-6, MCR Thyristors. Surface Mount 400V - 600V > MCR106-6, MCR106-8 TO 225AA CASE 77 STYLE 2 G K. Description
MCR106-6, MCR106-8 Pb Description PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability
(1 A to 70 A) Features. Compak SCR
Selected Packages* File #E71639 U.L. RECONIZED TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-22 *TO-218X 3-lead Compak *TO-22 TO-251 V-Pak (1 to 7 ) E6 eneral Description The Teccor line of thyristor SCR
MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
MCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description
MCR12DSM, MCR12DSN Thyristors Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive
MCR218-2G, MCR218-4G, MCR218-6G
MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
UNISONIC TECHNOLOGIES CO., LTD
MCR00 UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 3 2 SOT-23 SOT-223 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
2N5060 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
BTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
TN1215, TYN612, TYN812, TYN1012
TN1215, TYN612, TYN812, TYN1012 Standard 12 A SCRs Datasheet - production data Features On-state RMS current, I T(RMS) 12 A Repetitive peak off-state voltage, V DRM and V RRM 600 V, 800 V and 1000 V Triggering
Features. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.
Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching
MCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 75 C 0.8 A I T(AV) Average on-state current T C
EC103xx & SxSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps
ST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)
Bulletin I25159 rev. C 02/00 ST280C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK)
MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
Value Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)
MAIN FEATURES: DIODE / SCR MODULE Symbol Value Unit I T(RMS) 50-70-85 A V DRM /V RRM 800 and 1200 V I GT 50 and 100 ma DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS SOT-89 3 2 SOT-23 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation
C122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
RoHS COMPLIANT 800V BT BT131M-800D. BT E BT E BT E "E" 10mA. BT EA1 BT EA1 BT EA1 "E" 10mA BT131M-800
BT3 Series RoS A TRIAC: A Product Model Reference & Naming - - A 600V 800V 000V I GT - - BT3-600 BT3-800 BT3-000 BT3-600 BT3-800 BT3-000 "" 5mA BT3-600 BT3-800 BT3-000 "" 0mA BT3-600A BT3-800A BT3-000A
Phase Control Thyristors (Hockey-PUK Version), 2310 A
Phase Control Thyristors (Hockey-PUK Version), 2310 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Material categorization:
MCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability
MCR12DCM, MCR12DCN. Thyristors. Surface Mount 400V - 800V > MCR12DCM, MCR12DCN G K. Description
MCR12DCM, MCR12DCN Pb Description This thyristor is designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon
MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
Phase Control Thyristors (Hockey PUK Version), 1350 A
Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case B-PUK (TO-200AC) Designed and qualified for industrial
MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description
MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6 V I T(RMS) = 5 A I TSM = 6 A I GT = 35mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 5A) Gate Trigger Current : 35mA High commutation
2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
TN1610H-6T. High temperature 16 A SCRs. Description. Features. Applications
High temperature 16 A SCRs Datasheet production data Description Thanks to a junction temperature T j up to 150 C and a non-isolated TO-220 package, the TN1610H-6T offers high thermal performance operation
Phase Control Thyristors (Hockey PUK Version), 1745 A
Phase Control Thyristors (Hockey PUK Version), 1745 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Designed and
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
Thyristors 8 Amp Sensitive & Standard SCRs. Sxx08xSx & Sxx08x Series. Description
Sxx08xSx & Sxx08x Series RoHS Description This Sxx08x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
Description. Features & Benefits. RoHS compliant Glass passivated junctions. Applications. Schematic Symbol. Samples G
Sxx4xSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps of current
MCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description
MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
BTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
TN B. Standard 15 A SCRs. Description. Features. Application. Benefits
Standard 15 A SCRs Description Datasheet - production data The TN1515-600B is a 15 A thyristor SCR housed in DPAK package. It fits any high voltage application that requires a high power density and compact
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
POW-R-BLOK TM Dual SCR Isolated Module 500 Amperes / Up to 1600 Volts. LD43 50 Dual SCR POW-R-BLOK TM Module 500 Amperes / Volts
mperes / Up to 16 Volts R OUTLINE DRWING B C J F 1 3 L H Q - DI. (4 TYP.) P - M1 THD (3 TYP.) T - (4 TYP.) S 4 7 5 6 E K M G D LD43 5 Dual SCR Module mperes / 8-16 Volts LD43 Outline Dimensions Dimension
Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs. Qxx25xx & Qxx25xHx Series. Description
Qxx25xx & Qxx25xHx Series RoHS escription This 25 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,
MCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
Thyristors 55 Amp Standard SCRs. Symbol Parameter Test Conditions Value Unit Repetitive Peak off-state/reverse Voltage 1600 V V DSM
RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at
TFI V DRM V DSM V RRM V RSM
FAST SWITCHING THYRISTOR V DRM /V RRM = 2200 2400 V I T(AV) = 2500 A (T C = 80 C) I T(AV) = 3400 A (T C = 55 C) I TSM = 40 ka (T Vj = 125 C) Interdigitated amplifying gate Low on-state switching losses
Teccor brand Thyristors Silicon Controlled Rectifiers
Sx02xS EV Series Amp Sensitive SCR Description New Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR s junctions are
BTA A Snubberless Triacs. Features. Description. I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma
20 A Snubberless Triacs Datasheet production data Features I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma Description G A2 A1 The Triacs use high performance glass passivated
MCR12DG, MCR12MG, MCR12NG
MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
2N6400. Thyristors. Surface Mount V > 2N6400. Description
2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
MAC8DG, MAC8MG, MAC8NG
MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
X A sensitive gate SCR. Features. Applications. Description I T(RMS) = 0.8 A V DRM, V RRM = 600 V. I GT 30 to 200 µa
0.8 sensitive gate SCR Datasheet production data Features I T(RMS) = 0.8 V DRM, V RRM = 600 V I GT = 30 to 200 µ pplications Limited gate current topologies Ground fault circuit interrupters Overvoltage
ST300S SERIES 300A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25158 rev. B 01/94. case style TO-209AE (TO-118)
ST300S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4-16UNF2A
MCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DRM A
22 February 218 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT78 (TO-22AB) plastic package intended for use in applications requiring very high bidirectional
MAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
T x V 25 A Snubberless Triac. Description. Features. Applications. Benefits
1200 V 25 A Snubberless Triac Description Datasheet production data Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable
POW-R-BLOK TM Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts CD62 15B, CD67 15B
5 mperes / Up to Volts B G "J" () OUTLINE DRWING D E F F 6 7 4 5 M "K" () R S Description: Powerex SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging.
MC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description
MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
MCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits,
MAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
BTA08-800CW3G. Thyristors. Surface Mount 800V > BTA08-800CW3G. Description
BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
Thyristor High Voltage, Phase Control SCR, 40 A
Thyristor High Voltage, Phase Control SCR, 40 TO-247C 2 () (K) (G) 3 PRIMRY CHRCTERISTICS I T(V) 35 V DRM /V RRM 800 V, 200 V V TM.45 V I GT 50 m T J -40 C to +25 C Package TO-247C Circuit configuration
1800PT Series. Phase Control Thyristors (Hockey PUK Version), 1800A FEATURES TYPICAL APPLICATIONS. RoHS. Nell High Power Products.
Phase Control Thyristors (Hockey PUK ersion), 18 18PT Series FETURES Center amplifying gate Metal case with ceramic insulator lnternational standard case -24 (K-PUK) Nell s D-type Capsule Compliant to
ST180S SERIES 200A. Stud Version PHASE CONTROL THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics
ST180S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard
C106 Series. Sensitive Gate Silicon Controlled Rectifiers
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and
Teccor brand Thyristors 40 Amp High Temperature Low Tq SCR. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 115 C 40 A I T(AV)
HS4040xQx Series RoHS Description The HS4040xQx series of SCRs offer fast turn-off time (tq) characteristics required for applications such as power inverters, switching regulator, and high frequency pulse
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
JIEJIE MICROELECTRONICS CO., Ltd
JIJI MIROLTRONIS O., Ltd JST12 Series 12 TRIs Rev.3.0 SRIPTION: With high ability to withstand the shock loading of large current, JST12 series triacs provide high dv/dt rate with strong resistance to
POW-R-BLOK TM Dual SCR Isolated Module 150 Amperes / Up to 1600 Volts. CD63 15A Dual SCR Isolated POW-R-BLOK TM Module 150 Amperes / Up to 1600 Volts
CD63 15 15 mperes / Up to 16 B G "J" (3) OUTLINE DRWING D E F F 7 6 1 2 3 5 4 M F "K" (2) S Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated
BTA40 and BTA/BTB41 Series
BTA4 and BTA/BTB41 Series STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41
TN5015H-6G. High temperature 50 A SCRs. Description. Features. Applications
TN515H-6G High temperature 5 SCRs Datasheet - production data Features G K K G D²PK High junction temperature: Tj = 15 C High noise immunity dv/dt = 5 V/µs up to 15 C Gate triggering current IGT = 15 m
T2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description
T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
PINNING - SOT223 PIN CONFIGURATION SYMBOL
BT34W series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope suitable for surface mounting, intended for use in BT34W 5 6 8 applications
TCS4 340H Phase Control Thyristor
TCS4 340H The TCS4 is a high voltage, high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR to be reliably operated at high di/dt and dv/dt conditions in various
TK18. Phase Control Thyristor Advance Information Replaces January 2000 version, DS DS July 2001 TK18
Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES High Surge Capability APPLICATIONS High Power Drives High Voltage Power Supplies DC
T1635T-8FP. 16 A Snubberless Triac. Features. Applications. Description
16 A Snubberless Triac G A A1 Features Datasheet production data Medium current Triac High static and dynamic commutation Three quadrants ECOPACK compliant component Complies with UL standards (File ref:
T Phase Control Thyristor
The T820 is a high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR to be reliably operated at high di/dt and dv/dt conditions in various phase control applications.
BT RT SCR 24 April 2017 Product data sheet
24 April 217 1. General description Planar passivated Silicon Controlled Rectifier () in a SOT78 (TO-22AB) plastic package intended for use in applications requiring high bidirectional blocking voltage
Thyristors 4 Amp High Temperature Sensitive SCRs. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 130 C 4 A I T(AV)
RoHS Description This SJxx4x high temperature SCR series is ideal for uni-directional switch applications such as phase control in heating, motor speed controls, converters/rectifiers and capacitive discharge
MCR100 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
MCR0 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,
R L = 60 Ω. DC Gate Trigger Voltage. = 1 kω T J = 125 C = V DRM. / V RRM Exponential Waveform R GK I G. = 10mA PW = 15μsec I T. = 3.
S602ECS RoHS Description This new.8 A sensitive gate SCR in an TO-92 package with a GAK pin out, offers a high static component series with a high static dv/dt and a low turn off (t q ) time by the use
LDR3 Outline Dimensions. Dimension Inches Millimeters
OUTLINE DRAWING Dual SCR Module 5 Amperes / 16-18 Volts Ordering Information: Select the complete eight-digit module part number from the table below. Example: LDR3165 is a 16V, 5 Ampere Dual SCR Isolated
BTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
T9G Phase Control Thyristor
The T9G0 SCR employs a Center Fired amplifying gate structure which allows the SCR to be reliably operated at high di/dt and high dv/dt conditions in phase control applications. FEATURES: Low On-State
Teccor brand Thyristors 10 Amp Standard & Alternistor (High Communitation) Triacs. Qxx10xx & Qxx10xHx Series. Description
Qxx10xx & Qxx10xHx Series RoHS Description 10 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
ACST310-8B. Overvoltage protected AC switch. Description. Features. Applications. Benefits
Overvoltage protected AC switch Datasheet production data Features AC switch with self over voltage protection Microcontroller direct driven (low gate current max. 10 ma) Three quadrants (Q1, Q2 and Q3)
ACST6. Overvoltage protected AC switch. Applications. Description. Features. Benefits
Overvoltage protected AC switch Datasheet - production data OUT TO-220AB ACST610-8T OUT Features COM G OUT COM D²PAK ACST610-8G TO-220FPAB ACST610-8FP Figure 1. Functional diagram G G OUT COM OUT I²PAK