MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
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1 MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability Center-ate eometry for Uniform Current Spreading Enabling High Discharge Current Small Rugged, Thermowatt Package Constructed for Low Thermal Resistance and Maximum Power Dissipation and Durability High Capacitor Discharge Current, 300 mps PbFree Package is vailable* MXIMUM RTINS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive OffState oltage (Note ) (T J = 40 to +25 C, ate Open) MCR682 DRM, RRM 50 Peak Discharge Current (Note 2) I TM 300 On-State RMS Current (80 Conduction ngles; T C = 85 C) verage On-State Current (80 Conduction ngles; T C = 85 C) Peak Non-Repetitive Surge Current (/2 Cycle, Sine Wave, 60 Hz, T J = 25 C) I T(RMS) 2 I T() 8.0 I TSM 0 Circuit Fusing Considerations (t = 8.3 ms) I 2 t 40 2 s Forward Peak ate Current (t.0 s, T C = 85 C) Forward Peak ate Power (t.0 s, T C = 85 C) Forward verage ate Power (t = 8.3 ms, T C = 85 C) I M P M 20 W P () W Operating Junction Temperature Range T J 40 to +25 C Storage Temperature Range T stg 40 to +50 C Mounting Torque 8.0 in. lb. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 2. Ratings apply for t w = ms. See Figure for I TM capability for various duration of an exponentially decaying current waveform, t w is defined as 5 time constants of an exponentially decaying current pulse. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D SCRs 2 MPERES RMS 50 OLTS Y WW K TO220B CSE 2207 STYLE 3 = ssembly Location = Year = Work Week = PbFree Package = Diode Polarity MRKIN DIRM Y WW MCR682 K ORDERIN INFORMTION Device Package Shipping MCR682 TO220B 500 Units / Box MCR682 TO220B (PbFree) 500 Units / Box Preferred devices are recommended choices for future use and best overall value. PIN SSINMENT Cathode node ate 4 node K Semiconductor Components Industries, LLC, 2005 December, 2005 Rev. 2 Publication Order Number: MCR68/D
2 MCR682 THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC C/W Thermal Resistance, Junctiontombient R J 60 C/W Maximum Lead Temperature for Soldering Purposes /8 from Case for Seconds T L 260 C ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHRCTERISTICS Peak Repetitive Forward or Reverse Blocking Current ( K = Rated DRM or RRM, ate Open) T J = 25 C T J = 25 C ON CHRCTERISTICS Peak Forward On-State oltage (I TM = 24 ) (Note 3) (I TM = 300, t w = ms) (Note 4) ate Trigger Current (Continuous dc) ( D = 2, R L = 0 ) ate Trigger oltage (Continuous dc) ( D = 2, R L = 0 ) ate NonTrigger oltage ( D = 2 dc, R L = 0, T J = 25 C) Holding Current ( D = 2, Initiating Current = 200 m, ate Open) Latching Current ( D = 2 dc, I = 50 m) ate Controlled Turn-On Time (Note 5) ( D = Rated DRM, I = 50 m) (I TM = 24 Peak) DYNMIC CHRCTERISTICS Critical Rate-of-Rise of Off-State oltage ( D = Rated DRM, ate Open, Exponential Waveform, T J = 25 C) I DRM, I RRM TM m I T m T D 0.40 I H m I L 60 m t gt.0 s dv/dt / s Critical Rate-of-Rise of On-State Current di/dt 75 / s I = 50 m T J = 25 C 3. Pulse duration 300 s, duty cycle 2%. 4. Ratings apply for t w = ms. See Figure for I TM capability for various durations of an exponentially decaying current waveform. t w is defined as 5 time constants of an exponentially decaying current pulse. 5. The gate controlled turn-on time in a crowbar circuit will be influenced by the circuit inductance. 2
3 MCR682 oltage Current Characteristic of SCR + Current node + Symbol DRM I DRM RRM I RRM TM I H Parameter Peak Repetitive Off State Forward oltage Peak Forward Blocking Current Peak Repetitive Off State Reverse oltage Peak Reverse Blocking Current Peak On State oltage Holding Current I RRM at RRM on state Reverse Blocking Region (off state) Reverse valanche Region TM I H + oltage I DRM at DRM Forward Blocking Region (off state) node I TM, PEK DISCHRE CURRENT (MPS) I TM 50 t w t w = 5 time constants t w, PULSE CURRENT DURTION (ms) NORMLIZED PEK CURRENT T C, CSE TEMPERTURE ( C) Figure. Peak Capacitor Discharge Current Figure 2. Peak Capacitor Discharge Current Derating T C, MXIMUM CSE TEMPERTURE ( C) dc Half Wave I T(), ERE ON-STTE CURRENT (MPS) P (), ERE POWER DISSIPTION (WTTS) Half Wave dc T J = 25 C I T(), ERE ON-STTE CURRENT (MPS) Figure 3. Current Derating Figure 4. Maximum Power Dissipation 3
4 MCR682 r(t), TRNSIENT THERML RESISTNCE(NORMLIZED) t, TIME (ms) 0 Z JC(t) = R JC r(t) k 2 k 3 k 5 k k Figure 5. Thermal Response NORMLIZED TE TRIER CURRENT D = 2 olts R L = T J, JUNCTION TEMPERTURE ( C) 40 NORMLIZED TE TRIER OLTE D = 2 olts R L = 0 80 T J, JUNCTION TEMPERTURE ( C) Figure 6. ate Trigger Current Figure 7. ate Trigger oltage 3.0 NORMLIZED HOLD CURRENT.0 D = 2 olts I TM = 0 m T J, JUNCTION TEMPERTURE ( C) Figure 8. Holding Current 4
5 MCR682 PCKE DIMENSIONS TO220B CSE 2207 ISSUE B F T C T SETIN PLNE S NOTES:. DIMENSIONIN ND TOLERNCIN PER NSI Y4.5M, CONTROLLIN DIMENSION: INCH. 3. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREULRITIES RE LLOWED. H Q Z L N D K U R J INCHES MILLIMETERS DIM MIN MX MIN MX B C D F H J K L N Q R S T U Z STYLE 3: PIN. CTHODE 2. NODE 3. TE 4. NODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERIN INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 632, Phoenix, rizona US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Japan: ON Semiconductor, Japan Customer Focus Center 29 Kamimeguro, Meguroku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MCR68/D
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MARKING DIAGRAMS MAXIMUM RATINGS
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Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
MMT05B350T3G. Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS
Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning,
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
MBR120LSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors
TIP14, TIP141, TIP142, (); TIP145, TIP146, TIP147, () TIP141, TIP142, TIP146, and TIP147 are Preferred Devices Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and
MUR2100E. Ultrafast E Series with High Reverse Energy Capability ULTRAFAST RECTIFIER 2.0 AMPERES, 1000 VOLTS
Preferred Device SWITCHMODE Power Rectifier Ultrafast E Series with High Reverse Energy Capability These state of the art devices are designed for use in switching power supplies, inverters and as free
MJL4281A (NPN) MJL4302A (PNP)
MJL428A (NPN) MJL42A (PNP) Preferred Device Complementary NPNPNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are PowerBase power transistors for high power audio. Features 3 V CollectorEmitter
MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers
MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS
MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
NYE08-10B6TG. Protected TRIAC
NYE8-B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
BC489, A, B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS
High Current Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 80 Vdc Collector Base Voltage V CBO 80 Vdc Collector
MPS650, MPS651, NPN MPS750, MPS751, PNP. Amplifier Transistors. Pb Free Packages are Available* Features. MAXIMUM RATINGS
MPS65, MPS65, MPS, MPS, MPS65 and MPS are Preferred Devices Amplifier Transistors Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol MPS65 MPS MPS65 MPS Unit Collector Emitter Voltage
Distributed by: www.jameco.com -8-8-22 The content and copyrights of the attached material are the property of its owner. BRBCT Preferred Device SWITCHODE Power Rectifier Surface ount Power Package The
MR2520LRL. Overvoltage Transient Suppressor OVERVOLTAGE TRANSIENT SUPPRESSOR VOLTS
Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress
MPSA13, MPSA14. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
MPSA14 is a Preferred Device Darlington Transistors NPN Silicon Features PbFree Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Vdc Collector
MUR8100E, MUR880E. SWITCHMODE Power Rectifiers. Ultrafast E Series with High Reverse Energy Capability ULTRAFAST RECTIFIERS 8.
MUR8E, MUR88E MUR8E is a Preferred Device SWITCHMODE Power Rectifiers Ultrafast E Series with High Reverse Energy Capability The MUR8 and MUR88E diodes are designed for use in switching power supplies,
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
BC517G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features Pb Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CES 30 Collector Base Voltage V CB 40 Collector
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series
BC856BDW1T1, BC857BDW1T1 Series, BC858CDW1T1 Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed