C106 Series High Sensitive SCRs
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- Shauna Holt
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1 is lassivated PNPN devices designed for high volume consumerapplications such as temperature, light, and speed control; process andremote control, and warning systems where reliability of operation isimportant. Features PbFree Packages are vailable lassivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and olding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, igh eat Dissipation and Durability Sensitive ate Triggering Product Model Reference & Naming 4 400V 600V 800V 000V 200V : u TO-26 or TO-225 TO-26 TO-252 or SOT428 TO-252(DPK) T C06D C06M C06N C06 C06 D C06DS C06MS C06NS C06S C06S I T 200u Explain MCR06-4MCR06-6MCR06-8MCR06-0MCR708MCR708MCR708TMCR708T4MCR74 MCR74MCR74TMCR74T4MCR76MCR76MCR76TMCR76T4MCR78MCR78 MCR78TMCR78T43P4J-Z5P4J-Z5P6J-ZCR5S-8CR5S-2SM2D60DS2D60DSM3D60C S3D6CSM5C60DS5C6DS2004DSS2004DS2S4004DSS4004DS2S2006DS2S2006DS3S6004DS S6004DS2T06BT06MT07BT07M2P4M2P5M2P6M C 06 D S OI ELECTRONICS CO.,LTD. C : SCR 4 : D=400V M=600V N=800V =000V=KV =200V=K2 : T: TO-26 TO-225 S: TO-252 SOT428DPK PINNIN: TO-26 (TO-225) TO-252 (SOT428 or DPK) SMD TO-26TO-252 Pin Symbol Description Description TO-26 DPK TO-252 K 2 Cathode node 4 DPK TO-252 "2" = "4" 3 ate mb mounting base 2 3 K OI ELECTRONICS CO., LTD. 6 C06_Series SCRs
2 BSOLUTE RTINs (Limiting Values)TERML RESISTNCES SYMBOL Signification in Symbol Test Conditions Value Unit I T(RMS) On-State RMS Current (T C =80) 80 Conduction ngles 4 I T(V) I TSM verage OnState Current (80 Conduction ngles, T C =80) Non-Repetitive Peak on-state Current (½ Cycle, Sine Wave, 60z, T j =0) I M Forward Peak ate Current (Pulse Width.0S, T C =80) 0.2 I 2 t Circuit Fusing Consideration (t=8.3ms).65 2 s V DRM V RRM Repetitive peak off-state voltages (Sine Wave, 5060z, R K =K, T C =40 to 0) 200~200 V P (V) P M verage gate power dissipation (Pulse Width.0S, T C =80) Peak gate power (Pulse Width.0S, T C =80) W T j Operating Range -40 ~ +0 Tstg Storage Temperature Range -40 ~ +50 T L : Max.Lead Temperature for Soldering Purposes /8" (From Case for 0 Seconds) 260 R JC R J Thermal Resistance, Junction to Case Full Cycle 3 Thermal Resistance, Junction to mbient In Free ir 75 /W STTIC CRCTERISTICSDYNMIC CRCTERISTICS SYMBOL Paramenter & Test Conditions Min. Value Typ. Max. Unit I T I DRM I RRM (V K =6Vdc, R L =00O) Peak Repetitive Forward or Reverse Blocking Current V K =Rated V DRM or V RRM, R K =K T j =25 T j =-40 T j =25 T j = μ T j = I : olding Current IV D =2Vdc, I T =20m, ate Open T j = T j = m I L Latching Current (V K =2V, I T =20m T j =25 T j = V T ate Trigger Voltage (Continuous DC) (V K =6Vdc,R L =00) T j =25 T j = V TM Peak Forward On-State Voltage I TM =4 2.2 V V RM Peak Reverse ate Voltage I R =0μ 6.0 V D ate NonTrigger Voltage (Continuous DC, V K =2V, R L =00, T J =0) 0.2 dv/dt Critical Rate of Rise of OffState Voltage V K =Rated V DRM, Exponential Waveform, R K =K, T J =0 8.0 V/μs OI ELECTRONICS CO., LTD. 26 C06_Series SCRs
3 T C, CSE TEMPERTURE ( C) LF SINE WVE RESISTIVE OR INDUCTIVE LOD. 50 to 400 z Electrical characteristics & Typical characteristics I T(V) VERE ON-STTE CURRENT (MPERES) DC Figure. verage Current Derating P (V), VERE ON-STTE POWER DISSIPTION (WTTS) LF SINE WVE RESISTIVE OR INDUCTIVE LOD 50 TO 400z. JUNCTION TEMPERTURE 0 C I T(V) VERE ON-STTE CURRENT (MPERES) Figure 2. Maximum On State Power Dissipation DC I T, TE TRIER CURRENT ( ) 0 I, OLDIN CURRENT ( ) T J, JUNCTION TEMPERTURE ( C) T J, JUNCTION TEMPERTURE ( C) Figure 3. Typical ate Trigger Current versus Figure 4. Typical olding Current versus.0 000, TE TRIER VOLTE (V) I L, LTCIN CURRENT ( ) 00 VT T J, JUNCTION TEMPERTURE ( C) T J, JUNCTION TEMPERTURE ( C) 0 Figure 5. Typical ate Trigger Voltage versus Figure 6. Typical Latching Current versus 36 OI ELECTRONICS CO., LTD. C06_Series SCRs
4 PCKE MECNICL DT (Inch & mm) TO-26 (TO-225) (:) D E J I K Mraking M B 2 3 α3 α4 XXXXXX KKaabb C : OI ELECTRONICS CO.,LTD. XXXXXX: Part Number aa: Year bb: Week0~53 LOO in The upper left corner mark α F L : XXXXXX KK: aa: bb: 0~53 LOO α2 DIM Inches Millimeters Inches Millimeters DIM Min. Max. Min. Max. Min. Max. Min. Max. α - *3 - *3 F α2 - *3 - * α3 - *3 - * α4 - *3 - *3 I J B K C L - * *0.55 D M E Packaging Specifications Pcs Bag/ BOX/ Carton/ QTY`/ 500 Pcs 5000 Pcs Pcs TO-26 TO-225 Size/ mm W./ g 0.6 g 305 g 390 g 6550 g OI ELECTRONICS CO., LTD. 46 C06_Series SCRs
5 PCKE MECNICL DT (mm) TO-252 (DPK) (:) a5 C 2 3 F M a N DIM Min. Max C F L M N a a2 - *2.30 a L a2 a *: Typical, Unit: mm Mraking XXXXXX KKaabb : OI ELECTRONICS CO.,LTD. XXXXXX: Part Number aa: Year bb: Week0~53 LOO in The upper left corner mark : XXXXXX KK: aa: bb: 0~53 LOO Packaging Specifications Pcs Reel/ BOX/ Carton/ DPK TO-252 QTY`/ 2500 Pcs 5000 Pcs Pcs Size/ mm W./ g 0.4 g 080 g 233 g 2300 g OI ELECTRONICS CO., LTD. 56 C06_Series SCRs
6 Manufacturers version information KK Product Data KK Product Data KK Product Data-.2 KK WRN, Letters, patterns, are officially registered my trademark counterfeiting, theft are all violations, violators will be held liable! SENZEN OI ELECTRONICS CO., LTD. TEL: TEL: FX: : 66 OI ELECTRONICS CO., LTD. C06_Series SCRs
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BTAH-600CW3G, BTAH-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
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BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
More informationBTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More informationMCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits,
More informationBTA25-600CW3G, BTA25-800CW3G
BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BT37 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT37 6 8 bidirectional
More information2N6344. Thyristors. Surface Mount V > 2N6344. Description
2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled
More informationMAC228A. Thyristors. Surface Mount 400V - 800V > MAC228A. Description
MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
More information2N6344A, 2N6348A, 2N6349A
2N6344A, 2N6348A, 2N6349A Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon
More informationMC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description
MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
More informationThyristors 8 Amp Sensitive & Standard SCRs. Sxx08xSx & Sxx08x Series. Description
Sxx08xSx & Sxx08x Series RoHS Description This Sxx08x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
BT series D GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT D 6D bidirectional
More information2N6344. Silicon Bidirectional Thyristors. TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
More information2N6071A/B Series. Thyristors. Surface Mount 200V-600W > 2N6071A/B Series. Description
2N6071A/B Series Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate
More informationReverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
More informationBTA30H-600CW3G, BTA30H-800CW3G
BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
More informationBTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
More informationIT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor
More informationSilicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
More informationKxxx0yU SIDAC Series. Thyristors Standard Unidirectional SIDACs. RoHS. Description
Standard Unidirectional SIDCs xxx0yu SIDC Series RoHS Description The SIDC is a silicon unilateral voltage triggered switch. Upon application of a voltage exceeding the SIDC breakover voltage point, the
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BT6 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. UNIT intended for use in applications requiring high bidirectional transient and blocking
More informationTeccor brand Thyristors 40 Amp High Temperature Low Tq SCR. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 115 C 40 A I T(AV)
HS4040xQx Series RoHS Description The HS4040xQx series of SCRs offer fast turn-off time (tq) characteristics required for applications such as power inverters, switching regulator, and high frequency pulse
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
BT39 series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. MAX. UNIT intended for use in applications requiring high bidirectional transient and
More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation
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