Reverse Blocking Thyristors
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1 Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 800 Volts 300 A Surge Current Capability Device Marking: Logo, Device Type, e.g., 2N6504, Date Code MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit *Peak Repetitive OffState Voltage (Note 1.) (Gate Open, Sine Wave 50 to 60 Hz, T J = 25 to 125 C) 2N6504 2N6505 2N6507 2N6508 2N6509 On-State RMS Current (180 Conduction Angles; T C = 85 C) Average On-State Current (180 Conduction Angles; T C = 85 C) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, T J = 100 C) Forward Peak Gate Power (Pulse Width 1.0 µs, T C = 85 C) Forward Average Gate Power (t = 8.3 ms, T C = 85 C) Forward Peak Gate Current (Pulse Width 1.0 µs, T C = 85 C) V DRM, V RRM Volts I T(RMS) 25 A I T(AV) 16 A I TSM 250 A P GM 20 Watts P G(AV) 0.5 Watts I GM 2.0 A Operating Junction Temperature Range T J 40 to +125 Storage Temperature Range T stg 40 to +150 *Indicates JEDEC Registered Data 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. C C SCRs 25 AMPERES RMS 50 thru 800 VOLTS ORDERING INFORMATION Device Package Shipping 2N6504 TO220AB 500/Box 2N6505 2N6507 A 4 TO220AB TO220AB G TO220AB CASE 221A STYLE 3 x = 4, 5, 7, 8 or 9 YY = Year WW = Work Week PIN ASSIGNMENT Cathode Anode Gate 4 Anode K MARKING DIAGRAM YY WW 650x 500/Box 500/Box 2N6508 TO220AB 500/Box 2N6509 TO220AB 500/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 April, 2001 Rev. 4 1 Publication Order Number: 2N6504/D
2 *THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 1.5 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T L 260 C ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (V AK = Rated V DRM or V RRM, Gate Open) T J = 25 C T J = 125 C ON CHARACTERISTICS *Forward OnState Voltage (Note 2.) (I TM = 50 A) *Gate Trigger Current (Continuous dc) T C = 25 C (V AK = 12 Vdc, R L = 100 Ohms) T C = 40 C *Gate Trigger Voltage (Continuous dc) (V AK = 12 Vdc, R L = 100 Ohms, T C = 40 C) Gate Non-Trigger Voltage (V AK = 12 Vdc, R L = 100 Ohms, T J = 125 C) *Holding Current T C = 25 C (V AK = 12 Vdc, Initiating Current = 200 ma, Gate Open) T C = 40 C *Turn-On Time (I TM = 25 A, I GT = 50 madc) Turn-Off Time (V DRM = rated voltage) (I TM = 25 A, I R = 25 A) (I TM = 25 A, I R = 25 A, T J = 125 C) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (Gate Open, Rated V DRM, Exponential Waveform) *Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%. I DRM, I RRM µa ma V TM 1.8 Volts I GT ma V GT Volts V GD 0.2 Volts I H ma t gt µs t q dv/dt 50 V/µs µs 2
3 Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode α α α α α α Figure 1. Average Current Derating Figure 2. Maximum OnState Power Dissipation 3
4 Figure 3. Typical OnState Characteristics Figure 4. Maximum NonRepetitive Surge Current θ θ Figure 5. Thermal Response 4
5 TYPICAL TRIGGER CHARACTERISTICS Figure 6. Typical Gate Trigger Current versus Junction Temperature Figure 7. Typical Gate Trigger Voltage versus Junction Temperature Figure 8. Typical Holding Current versus Junction Temperature 5
6 PACKAGE DIMENSIONS TO220AB CASE 221A07 ISSUE AA H Q Z L V G B N D A K F T U C T S R J 6
7 Notes 7
8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (MonFri 2:30pm to 7:00pm CET) ONlitgerman@hibbertco.com French Phone: (+1) (MonFri 2:00pm to 7:00pm CET) ONlitfrench@hibbertco.com English Phone: (+1) (MonFri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLLFREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (MonFri 8:00am to 5:00pm MST) ONlitspanish@hibbertco.com TollFree from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (TueFri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlitasia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4321 NishiGotanda, Shinagawaku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 2N6504/D
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MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS
MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
POWER DARLINGTON TRANSISTORS 8 AMPERES 300, 400 VOLTS 80 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
The MJE5740 and MJE5742 Darlington transistors are designed for highvoltage power switching in inductive circuits. They are particularly suited for operation in applications such as: Small Engine Ignition
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit
The MC1455 monolithic timing circuit is a highly stable controller capable of producing accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if desired. In
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
Z0107MA TRIACS 1.0 AMPERE RMS 600 VOLTS
Z7MA Sensitive ate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an
MMT05B350T3G. Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS
Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning,
MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
DUAL TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit
The MC3456 dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In the
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
MMT05B230T3, MMT05B260T3, MMT05B310T3. Thyristor Surge Protectors. High Voltage Bidirectional TSPD ( )
,, Preferred Devices Thyristor Surge Protectors High oltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION MC3x58P1 AWL YYWW PDIP 8 P1 SUFFIX CASE 626 SO 8 D SUFFIX CASE 751 3x58 ALYW
Utilizing the circuit designs perfected for the quad operational amplifiers, these dual operational amplifiers feature: low power drain, a common mode input voltage range extending to ground/v EE, and
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
C122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices