MARKING DIAGRAMS MAXIMUM RATINGS
|
|
|
- Angelica Haynes
- 5 years ago
- Views:
Transcription
1 Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive Discharge Ignition); and small engines. Features Small Size Passivated Die for Reliability and Uniformity Low Level Triggering and olding Characteristics Epoxy Meets UL 9 25 in ESD Ratings: uman Body Model, 3B 8000 V Machine Model, C 00 V These are PbFree Devices SCRs 12 MPERES RMS VOLTS Littelfuse.com G K MRKING DIGRMS MXIMUM RTINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) (T J = 0 to 1 C, Sine Wave, 50 z to V DRM, V RRM V 60 z) MCR12DSM 600 MCR12DSN 800 OnState RMS Current (180 Conduction ngles; T C = 75 C) verage OnState Current (180 Conduction ngles; T C = 75 C) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 z, T J = 1 C) I T(RMS) 12 I T(V) 7.6 I TSM DPK CSE 369C STYLE IPK CSE 369D STYLE YWW R1 2DSxG YWW R1 2DSxG Circuit Fusing Consideration (t = 8.3 msec) I 2 t 1 2 sec Forward Peak Gate Power (Pulse Width sec, T C = 75 C) Forward verage Gate Power (t = 8.3 msec, T C = 75 C) P GM 5.0 W P G(V) 0.5 W Y WW R12DSx G = Year = Work Week = Device Code x= M or N = PbFree Package Forward Peak Gate Current (Pulse Width sec, T C = 75 C) I GM 2.0 Operating Range T J 0 to 1 C Storage Temperature Range T stg 0 to 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. PIN SSIGNMENT 1 Cathode 2 node 3 Gate node ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. September 19, 2016 Rev. 7 1 Publication Order Number:
2 TERML CRCTERISTICS Thermal Resistance, JunctiontoCase Thermal Resistance Junctiontombient Thermal Resistance Junctiontombient (Note 2) Characteristic Symbol Max Unit Maximum Lead Temperature for Soldering Purposes (Note 3) T L 260 C R JC R J R J C/W ELECTRICL CRCTERISTICS (T J = 25 C unless otherwise noted) OFF CRCTERISTICS Characteristics Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note ) (V K = Rated V DRM or V RRM ; R GK = K ) T J = 25 C T J = 1 C ON CRCTERISTICS Peak Reverse Gate Blocking Voltage, (I GR = ) V GRM V Peak Reverse Gate Blocking Current, (V GR = V) I GRM 1.2 Peak Forward OnState Voltage (Note 5), (I TM = 20 ) V TM V Gate Trigger Current (Continuous dc) (Note 6) (V D = 12 V, R L = 0 ) T J = 25 C T J = 0 C Gate Trigger Voltage (Continuous dc) (Note 6) (V D = 12 V, R L = 0 ) T J = 25 C T J = 0 C T J = 1 C olding Current (V D = 12 V, Initiating Current = 200 m, R GK = 1 k ) T J = 25 C T J = 0 C Latching Current (V D = 12 V, I G = 2.0 m, R GK = 1 k ) T J = 25 C T J = 0 C TurnOn Time (Source Voltage = 12 V, R S = K, I T = 16 (pk), R GK = K ) (V D = Rated V DRM, Rise Time = 20 ns, Pulse Width = s) DYNMIC CRCTERISTICS Critical Rate of Rise of OffState Voltage (V D = 0.67 x Rated V DRM, Exponential Waveform, R GK = K, T J = 1 C) I DRM, I RRM I GT 5.0 V GT I 0.5 I L 0.5 tgt dv/dt Critical Rate of Rise of OnState Current di/dt / s (I PK = 50, P W = 0 sec, dig/dt = 1 / sec, I GT = m) These ratings are applicable when surface mounted on the minimum pad sizes recommended. 3. 1/8 from case for seconds.. Ratings apply for negative gate voltage or R GK = k. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 5. Pulse Test: Pulse Width 2.0 msec, Duty Cycle 2%. 6. R GK current not included in measurement. V m m s V/ s September 19, 2016 Rev. 7 2 Publication Order Number:
3 Voltage Current Characteristic of SCR + Current node + Symbol V DRM I DRM V RRM I RRM V TM I Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage olding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse valanche Region V TM I + Voltage I DRM at V DRM Forward Blocking Region (off state) node T C, MXIMUM LLOWBLE CSE TEMPERTURE ( C) dc 180 (V), VERGE POWER DISSIPTION (WTTS) 75 = Conduction 2.0 ngle = I T(V), VERGE ON-STTE CURRENT (MPS) I T(V), VERGE ON-STTE CURRENT (MPS) P = Conduction ngle = dc Figure 1. verage Current Derating Figure 2. OnState Power Dissipation September 19, 2016 Rev. 7 3 Publication Order Number:
4 I I MCR12DSM, MCR12DSN, INSTNTNEOUS ON-STTE CURRENT (MPS) T 0 0 T J = 25 C T J = 1 C T J = 25 C r (t), TRNSIENT TERML RESISTNCE (NORMLIZED) Z JC(t) = R JC(t) r(t) K V T, INSTNTNEOUS ON-STTE VOLTGE (VOLTS) t, TIME (ms) Figure 3. OnState Characteristics Figure. Transient Thermal Response 00 I GT, GTE TRIGGER CURRENT ( ) 0-0 R GK = K GTE OPEN V GT, GTE TRIGGER VOLTGE (VOLTS) T J, JUNCTION TEMPERTURE ( C) T J, JUNCTION TEMPERTURE ( C) Figure 5. Typical Gate Trigger Current versus Figure 6. Typical Gate Trigger Voltage versus R GK = K R GK = K I, OLDING CURRENT (m), LTCING CURRENT (m) L T J, JUNCTION TEMPERTURE ( C) T J, JUNCTION TEMPERTURE ( C) Figure 7. Typical olding Current versus Figure 8. Typical Latching Current versus September 19, 2016 Rev. 7 Publication Order Number:
5 I MCR12DSM, MCR12DSN T J = 25 C 00, OLDING CURRENT (m) I GT = 25 I GT = STTIC dv/dt (V/ s) 0 70 C 90 C T J = 1 C K 0 00 R GK, GTE-CTODE RESISTNCE (OMS) R GK, GTE-CTODE RESISTNCE (OMS) Figure 9. olding Current versus GateCathode Resistance Figure. Exponential Static dv/dt versus GateCathode Resistance and Junction Temperature V T J = 1 C 00 V D = 800 V T J = 1 C STTIC dv/dt (V/ s) V V PK = 800 V STTIC dv/dt (V/ s) 0 I GT = 25 I GT = R GK, GTE-CTODE RESISTNCE (OMS) R GK, GTE-CTODE RESISTNCE (OMS) Figure 11. Exponential Static dv/dt versus GateCathode Resistance and Peak Voltage Figure 12. Exponential Static dv/dt versus GateCathode Resistance and Gate Trigger Current Sensitivity ORDERING INFORMTION MCR12DSMTG Device Package Type Package Shipping DPK (PbFree) 369C 2500 / Tape & Reel MCR12DSN1G IPK (PbFree) 369D 75 Units / Rail MCR12DSNTG DPK (PbFree) 369C 2500 / Tape & Reel September 19, 2016 Rev. 7 5 Publication Order Number:
6 PCKGE DIMENSIONS DPK (SINGLE GUGE) CSE 369C ISSUE D L3 L b2 e E b b D B DETIL c (3) M C C c2 L2 GUGE PLNE L L1 DETIL ROTTED 90 CW 1 C NOTES: 1. DIMENSIONING ND TOLERNCING PER SME Y1.5M, CONTROLLING DIMENSION: INCES. 3. TERML PD CONTOUR OPTIONL WITIN DI- MENSIONS b3, L3 and Z.. DIMENSIONS D ND E DO NOT INCLUDE MOLD FLS, PROTRUSIONS, OR BURRS. MOLD FLS, PROTRUSIONS, OR GTE BURRS SLL NOT EXCEED INCES PER SIDE. Z 5. DIMENSIONS D ND E RE DETERMINED T TE OUTERMOST EXTREMES OF TE PLSTIC BODY. 6. DTUMS ND B RE DETERMINED T DTUM PLNE. INCES MILLIMETERS DIM MIN MX MIN MX b b b c SETING c PLNE D E e BSC 2.29 BSC L L1 0.8 REF 2.7 REF L BSC 0.51 BSC L L Z SOLDERING FOOTPRINT* STYLE : PIN 1. CTODE 2. NODE 3. GTE. NODE SCLE 3:1 mm inches September 19, 2016 Rev. 7 6 Publication Order Number:
7 PCKGE DIMENSIONS IPK CSE 369D ISSUE C V B R C E NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI Y1.5M, CONTROLLING DIMENSION: INC. S T SETING PLNE F G K D 3 PL J 3 (0.005) M T Z INCES MILLIMETERS DIM MIN MX MIN MX B C D E F G BSC 2.29 BSC J K R S V Z STYLE : PIN 1. CTODE 2. NODE 3. GTE. NODE Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Littelfuse.com September 19, 2016 Rev. 7 7 Publication Order Number:
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process
2N5060 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
MCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability
MCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description
MCR12DSM, MCR12DSN Thyristors Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
BTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
MCR12DCM, MCR12DCN. Thyristors. Surface Mount 400V - 800V > MCR12DCM, MCR12DCN G K. Description
MCR12DCM, MCR12DCN Pb Description This thyristor is designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used
MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS
High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru
NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
MC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description
MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
C106 Series. Sensitive Gate Silicon Controlled Rectifiers
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS
MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching
T4302. Power MOSFET. 68 A, 30 V, N Channel DPAK/IPAK
NTD Power MOSFET 68, V, NChannel DPK/IPK Features Ultra Low R DS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery valanche Energy Specified I
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MCR106-6, MCR Thyristors. Surface Mount 400V - 600V > MCR106-6, MCR106-8 TO 225AA CASE 77 STYLE 2 G K. Description
MCR106-6, MCR106-8 Pb Description PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability
MCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS
MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
C122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
MCR8N. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever
C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light,
MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art
MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
NGD8205ANT4G. Ignition IGBT. 20 Amp, 350 Volt, N Channel DPAK. 20 A, 350 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V
NGD25AN Ignition IGBT 2 Amp, 35 Volt, N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in
MAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
NTD4813N. Power MOSFET 30 V, 40 A, Single N -Channel, DPAK/IPAK
NTD813N Power MOSFET 3 V,, Single N -Channel, DPK/IPK Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These
MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS
MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction
2N6400 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 16 AMPERES RMS 50 thru 800 VOLTS
Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever halfwave silicon
MBRM120LT1G NRVBM120LT1G MBRM120LT3G. NRVBM120LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12LT1G, NRVBM12LT1G, MBRM12LT3G, NRVBM12LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
MBRM130LT1G NRVBM130LT1G MBRM130LT3G. NRVBM130LT3G Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM13LT1G, NRVBM13LT1G, MBRM13LT3G, NRVBM13LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
MAC12D, MAC12M, MAC12N
MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
MCR12DG, MCR12MG, MCR12NG
MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
MCR100 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
MCR0 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,
MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MCR106-6, MCR Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 AMPERES RMS 400 thru 600 VOLTS
MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed
MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description
MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package
MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.
2N6400. Thyristors. Surface Mount V > 2N6400. Description
2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
BTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
BTA08-800CW3G. Triacs. Silicon Bidirectional Thyristors TRIACS 8 AMPERES RMS 800 VOLTS
BTA8-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
MAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description
MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
BTA08-800CW3G. Thyristors. Surface Mount 800V > BTA08-800CW3G. Description
BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
BTA12-600C4G, BTA12-800C4G. Triacs Silicon Bidirectional Thyristors. TRIACS 12 AMPERES RMS 600 thru 800 VOLTS
BTA12-6C4G, BTA12-8C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
BTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
MAC3030 8G. Triacs. Silicon Bidirectional Thyristors TRIACS 8.0 AMPERES RMS 250 VOLTS
Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon
MCR218-2G, MCR218-4G, MCR218-6G
MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
MAC8DG, MAC8MG, MAC8NG
MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
BTB16-600CW3G, BTB16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-CW3G, BTB-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
5.AT3G Series, SZ5.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
P66.8AT3G Series, SZP66.8AT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy
Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
BTA25-600CW3G, BTA25-800CW3G
BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage
BTA25-600CW3G, BTA25-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTA-6CW3G, BTA-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
BTA25H-600CW3G, BTA25H-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTAH-600CW3G, BTAH-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
MAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
MBR140SF, NRVB140SF. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14SF, NRVB14SF Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
C106 Series High Sensitive SCRs
is lassivated PNPN devices designed for high volume consumerapplications such as temperature, light, and speed control; process andremote control, and warning systems where reliability of operation isimportant.
T2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description
T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
MUR550APFG, MURD550PFG, MUR550PFG, MURF550PFG, NRVUD550PFT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 5.0 AMPERES, 520 VOLTS
MUR55PFG, MURD55PFG, MUR55PFG, MURF55PFG, NRVUD55PFTG SWITCHMODE Power Rectifier These state of the art devices are designed for power factor correction in discontinuous and critical conduction mode. Features
Distributed by: www.jameco.com -800-8-44 The content and copyrights of the attached material are the property of its owner. Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier
MCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits,
BTA30H-600CW3G, BTA30H-800CW3G
BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
2N6344. Silicon Bidirectional Thyristors. TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
BTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.
NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK
Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS
MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe