MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

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Roy Wiggins
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MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power

1 MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features Compact Package with J Bend Leads Ideal for utomated Handling Highly Stable Oxide Passivated Junction Guard Ring for Overvoltage Protection Low Forward Voltage Drop NBR and NRVB Prefixes for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These Devices are Pb Free and are RoHS Compliant* Mechanical Characteristics Case: Molded Epoxy Epoxy Meets UL 94 in Weight: 7 mg (SM), 95 mg () (pproximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 26 C Max. for Seconds Finish: ll External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: Machine Model = C Human Body Model = 3B Device Meets MSL Requirements SCHOTTKY BRRIER RECTIFIER 2. MPERES, VOLTS SM CSE 43D CSE 43 MRKING DIGRMS 2 YWW YWW B2 2 = MBR2HT3G NRVB2HT3G B2 = MBRS2HT3G NBRS2HT3G = ssembly Location Y = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) Device Package Shipping MBR2HT3G NRVB2HT3G ORDERING INFORMTION SM SM 5, / 5, / MBRS2HT3G NBRS2HT3G 2,5 / 2,5 / For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 22 Publication Order Number: December, 22 Rev. 8 MBRS2H/D

2 MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, MXIMUM RTINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage verage Rectified Forward Current (T L = 5 C) V RRM V RWM V R I O 2. V Non Repetitive Peak Surge Current (Surge pplied at Rated Load Conditions Halfwave, Single Phase, 6 Hz) I FSM 3 Storage Temperature Range T stg 65 to +75 C Operating Junction Temperature (Note ) T J 65 to +75 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < /R J. THERML CHRCTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Lead (Note 2) MBR2HT3G, NRVB2HT3G MBRS2HT3G, NBRS2HT3G Thermal Resistance, Junction to mbient (Note 2) MBR2HT3G, NRVB2HT3G MBRS2HT3G, NBRS2HT3G JCL 4 2 R J 75 7 C/W C/W Thermal Resistance, Junction to mbient (Note 3) MBR2HT3G, NRVB2HT3G MBRS2HT3G, NBRS2HT3G 2. Mounted with 7 mm square copper pad size (pproximately inch square) oz FR4 Board. 3. Mounted with minimum recommended pad size oz FR4 Board. R J C/W ELECTRICL CHRCTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (i F = 2. ) Maximum Instantaneous Reverse Current (Note 4) (V R = V) 4. Pulse Test: Pulse Width 38 s, Duty Cycle 2.%. Value Symbol T J = 25 C T J = 25 C v F I R.8.5 Unit V m 2

3 MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, TYPICL CHRCTERISTICS I F, FORWRD CURRENT () 5 C 25 C 25 C I F, FORWRD CURRENT () 25 C 5 C 25 C V F, INSTNTNEOUS FORWRD VOLTGE (V) V F, INSTNTNEOUS FORWRD VOLTGE (V) Figure. Typical Forward Voltage Figure 2. Maximum Forward Voltage I R, REVERSE CURRENT (m) C 25 C 25 C I R, REVERSE CURRENT (m).. 5 C 25 C 25 C V R, REVERSE VOLTGE (V) V R, REVERSE VOLTGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current C, CPCITNCE (pf) T J = 25 C f = MHz I F(V), VERGE FORWRD CURRENT () Square Wave R JL = 4 C/W V R, REVERSE VOLTGE (V) T L, LED TEMPERTURE ( C) Figure 5. Typical Capacitance Figure 6. Current Derating Lead 3

4 MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, TYPICL CHRCTERISTICS I F(V), VERGE FORWRD CURRENT () Square Wave R J = 7 C/W R J = C/W P FO, VERGE POWER DISSIPTION (W) T J = 75 C 2 3 Square Wave 4 5 T, MBIENT TEMPERTURE ( C) I O, VERGE FORWRD CURRENT () Figure 7. Current Derating, mbient Figure 8. Maximum Forward Power Dissipation.. 5% (DUTY CYCLE) 2% % 5.% 2.%.% Die X.8 mm Die Y.8 mm PCB Cu rea mm 2 PCB Cu thk. oz Figure 9. Thermal Response, Junction to mbient ( inch pad) MBRS2HT3G/NBRS2HT3G. 5% (DUTY CYCLE) 2% % 5.% 2.%.% Die X.8 mm Die Y.8 mm PCB Cu rea.8 mm 2 PCB Cu thk. oz Figure. Thermal Response, Junction to mbient (min pad) MBRS2HT3G/NBRS2HT3G 4

5 MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, TYPICL CHRCTERISTICS.. 5% (DUTY CYCLE) 2% % 5.% 2.%.% Figure. Thermal Response, Junction to mbient ( inch pad) MBR2HT3G/NRVB2HT3G. 5% (DUTY CYCLE) 2% % 5.% 2.%.% Figure 2. Thermal Response, Junction to mbient (min pad) MBR2HT3G/NRVB2HT3G POWER DISSIPTION (W) Power Based on T = 25 C 2. oz. oz 2 3 COPPER RE (sq mm) Figure 3. P D, Junction to mbient (URS copper area) 5 4

6 MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, PCKGE DIMENSIONS SM CSE 43D 2 ISSUE G H E E NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHLL BE MESURED WITHIN DIMENSION L. b D POLRITY INDICTOR OPTIONL S NEEDED (SEE STYLES) MILLIMETERS INCHES DIM MIN NOM MX MIN NOM MX b c D E H E L L c SOLDERING FOOTPRINT* SCLE 8: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 6

7 MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, PCKGE DIMENSIONS CSE 43 3 ISSUE J H E E b POLRITY INDICTOR OPTIONL S NEEDED D NOTES:. DIMENSIONING ND TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHLL BE MESURED WITHIN DIMENSION L. MILLIMETERS INCHES DIM MIN NOM MX MIN NOM MX b c D E H E L L.5 REF.2 REF L L c SOLDERING FOOTPRINT* SCLE 8: mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MBRS2H/D

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction