MCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
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1 MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. Features Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package Case Pin Out To Obtain DPK in Straight Lead ersion (Shipped in Sleeves): dd 1 Suffix to Device Number, i.e., MCR7061 Epoxy Meets UL in ESD Ratings: Human Body Model, 3B > 8000 Machine Model, C > 00 Pb Free Packages are vailable Functional Diagram G K dditional Information Datasheet Resources Samples
2 Maximum Ratings ( = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive Off State oltage (Note 1) (T C = 0 to +110 C, Sine Wave, 50 to 60 Hz, R GK = 1 k Ω) MCR703 MCR706 MCR708 DRM, 100 RRM Peak Non-Repetitive Off State oltage (180º Conduction ngles; T C = 85ºC) MCR703 MCR706 MCR I TM (RMS) On State RMS Current (180º Conduction ngles; T C = 90ºC) I TM.0 verage On-State Current T C = 0 to +90ºC (180º Conduction ngles) T C = +100ºC 2.6 I T() 1.6 Non-Repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, = 110 C) (1/2 Cycle, Sine Wave 1.5 ms, = 110 C) I 25 TSM 35 Circuit Fusing Consideration (t = 8.3 ms) I 2 t 2.6 ²sec Forward Peak Gate Power (Pulse Width µsec, T C = 90 C) I GM 0.5 W Forward Peak Gate Current (Pulse Width µsec, T C = 90 C) I GM 0.2 Forward verage Gate Power (t = 8.3 ms, TC = 90ºC) P G() 0.1 W Operating Junction Temperature Range -0 to +110 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol alue Unit Thermal Resistance, Junction to Case R 8JC 3.0 C/W Thermal Resistance, Junction to mbient R 8J 80 Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 10 Seconds T L 260 C 3. RGK current not included in measurement.
3 Electrical Characteristics - OFF ( = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current ( K = Rated DRM or RRM, R GK = 1 k Ω) = 25 C I DRM, I RRM = 110 C µ Electrical Characteristics - ON ( = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Peak Forward "On" oltage (I TM = 8.2 Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) TM 2.2 Gate Trigger Current (Continuous dc) ( K = 12 ; R L = 2 Ω) = 25 C _ I GT = 0 C 300 µ Gate Trigger oltage (Continuous dc) (Note 3) ( K = 12 ; R L = 2 Ω) = 25 C 0.8 GT = 0 C Gate Non-Trigger oltage (Note 3) ( K = 12 dc; R L = 100 Ω, T C =110º) GD 0.2 Holding Current ( K = 12 dc, R GK = 1 k Ω) T C = 25ºC (Initiating Current = 20 m) T C = 0ºC I H _ m Peak Reverse Gate Blocking oltage (I GR = 10 µ) RGM Peak Reverse Gate Blocking Current ( GR = 10 ) I RGM 1.2 µ Total Turn-On Time (Source oltage = 12, RS = 6 kq) (I TM = 8.2, I GT = 2 m, Rated DRM ) (Rise Time = 20 ns, Pulse Width = 10 µs) t gt _ 2.0 _ µs Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate of Rise of Off State oltage ( D = Rated DRM, R GK = 1 k Ω, Exponential Waveform, Gate Open, T c = 110ºC) Repetitive Critical Rate of Rise of On State Current (Cf = 60 Hz, I PK = 30, PW = 100 µs, dig/dt = 1 /µs) dv/dt 10 /µs di/dt 100 /µs 3. RGK current not included in measurement.
4 oltage Current Characteristic of SCR Symbol DRM Parameter Peak Repetitive Forward Off State oltage +C urrent node + TM I DRM Peak Forward Blocking Current on state RRM Peak Repetitive Reverse Off State oltage I RRM at RRM I H I RRM TM I H Peak Reverse Blocking Current Maximum On State oltage Holding Current Reverse Blocking Region (off state) Reverse valanche Region node + oltage I DRM at DRM Forward Blocking Region (off state) Figure 1. RMS Current Derating Figure 2. On State Power Dissipation Figure 3. On State Characteristics Figure. Transient Thermal Response r (t), TRNSIENT RESISTNCE (NORMLIZED) Z JC(t) = R JC(t) r(t) ,000 t, TIME (ms)
5 Figure 5. Typical Gate Trigger Current vs Junction Temperature Figure 6. Typical Gate Trigger oltage vs Junction Temperature 35 I GT, GTE TRIGGER CURRENT ( ) GT, GTE TRIGGER OLTGE (OLTS) , JUNCTION TEMPERTURE ( C), JUNCTION TEMPERTURE ( C) Figure 7. Typical Holding Current vs Junction Temperature Figure 8. Typical Latching Current vs Junction Temperature I H, HOLDING CURRENT (m) I, LTCHING CURRENT (m) L , JUNCTION TEMPERTURE ( C), JUNCTION TEMPERTURE ( C)
6 Dimensions Soldering Footprint DPK CSE 01 ISSUE B C T SETING PLNE R E S 12 3 K U Z SCLE 3:1 mm inches F L J H D 2 PL G 0.13 (0.005) M T Dim Inches Millimeters Min Max Min Max B C D E F G BSC.58 BSC H J K L BSC 2.29 BSC R S U Z DIMENSIONING ND TOLERNCING PER NSI Y1.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREGULRITIES RE LLOWED.
7 Dimensions Part Marking System DPK 3 CSE 369D 01 ISSUE B DPK CSE STYLE 5 YWW CR 70xG S B R 12 3 C E Z DPK 3 CSE 369D STYLE 5 YWW CR 70xG T SETING PLNE F G K J D 3 PL 0.13 (0.005) M T H Pin ssignment Y= Year WW =W ork Week 70x =D evice Code x = 3, 6 or 8 G= Pb Free Package 1 Cathode Dim Inches Millimeters Min Max Min Max B C D E F G BSC 2.29 BSC H J K R S Z DIMENSIONING ND TOLERNCING PER NSI Y1.5M, CONTROLLING DIMENSION: INCH. 2 node 3 Gate node Ordering Information Device Package Shipping MCR703T MCR703TG MCR706T MCR706TG MCR708 MCR708G MCR7081 MCR7081G DPK DPK-3 369D 369D 2500 Tape & Reel 75 Units/ Rail Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: MCR708T MCR708TG DPK 2500 Tape & Reel
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
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UNISONIC TECHNOLOGIES CO., LTD
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Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6 V I T(RMS) = 5 A I TSM = 6 A I GT = 35mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 5A) Gate Trigger Current : 35mA High commutation
1.5SMCxxAT3G. TVS Diodes. Surface Mount > 1500W > 1.5SMCxxAT3G. Cathode. Anode. Uni-directional. Description
1.5SMCxxAT3G Pb Description The 1.5SMCxxAT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability,
CR02AM-8. Thyristor. Low Power Use. Features. Outline. Applications. Maximum Ratings. REJ03G Rev.1.00 Mar
Thyristor Low Power Use REJG4- Rev.. Mar.8. Features I T (AV) :. A V DRM : 4 V I GT : µa Planar Passivation Type Completed Pb free product Outline RENESAS Package code: PRSSDE-A (Package name: TO-9()).
1.5SMC6.8AT3G. TVS Diodes. Surface Mount > 1500W > 1.5SMC6.8AT3G. Bi-directional. Cathode. Anode. Uni-directional. Description
1.5SMC6.8AT3G Pb Description The 1.5SMC6.8AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge
MCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits,
Description. Features & Benefits. RoHS compliant Glass passivated junctions. Applications. Schematic Symbol. Samples G
Sxx4xSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps of current
P6SMB11AT3G Series. TVS Diodes. Surface Mount > 600W > P6SMB11AT3G Series. Bi-directional. Cathode. Anode. Uni-directional.
P6SMB11AT3G Series Pb Description The P6SMB11AT3G series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge
MAC15 Series. Triacs. Silicon Bidirectional Thyristors. TRIACS 15 AMPERES RMS 400 thru 800 VOLTS
MAC5 Series Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as solidstate relays, motor controls, heating controls and power supplies; or wherever
MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
MAC3030 8G. Triacs. Silicon Bidirectional Thyristors TRIACS 8.0 AMPERES RMS 250 VOLTS
Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon
Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 75 C 0.8 A I T(AV) Average on-state current T C
EC103xx & SxSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps
: PNPN DB3 : MCRB25D MCRB25M MCRB25N MCRB25H. Pin Polarity Circuit Diagram TO-220F, TO-220AB, TO-263 (D 2 PAK)
Designed primarily for half wave ac control applications, such asmotor controls, heating controls, and power supplies; or whereverhalf wave, silicon gate controlled devices are needed. Blocking Voltage
TN B. Standard 15 A SCRs. Description. Features. Application. Benefits
Standard 15 A SCRs Description Datasheet - production data The TN1515-600B is a 15 A thyristor SCR housed in DPAK package. It fits any high voltage application that requires a high power density and compact
MJD340, NJVMJD340T4G (NPN), MJD350, NJVMJD350T4G (PNP) High Voltage Power Transistors DPAK For Surface Mount Applications
MJD34, NJMJD34T4G (NPN), MJD3, NJMJD3T4G (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
Thyristors 8 Amp Sensitive & Standard SCRs. Sxx08xSx & Sxx08x Series. Description
Sxx08xSx & Sxx08x Series RoHS Description This Sxx08x SCR series is ideal for uni-directional switch applications such as phase control, heating, motor speed controls, converters/rectifiers and capacitive
MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
Teccor brand Thyristors 15 Amp Standard & 16 Amp Alternistor (High Commutation) Triacs
Qxx15xx & Qxx16xHx Series RoHS Description The 15 mp and 16 mp bi-directional solid state switch series are designed for C switching and phase control applications such as motor speed, temperature modulation
MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS
MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
IT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ.....9 MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor
NGB8207BN - 20 A, 365 V, N-Channel Ignition IGBT, D 2 PAK
NGB8207BN - 20 A, 365, N-Channel Ignition IGBT, D 2 PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over oltage clamped protection