MCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
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- Eunice Hensley
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1 MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process and remote controls; warning systems; capacitive discharge circuits and MPU interface. Features Center ate eometry for Uniform Current Density ll Diffused and lass-passivated Junctions for Parameter Uniformity and Stability Small, Rugged Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Low Trigger Currents, 200 Maximum for Direct Driving from Integrated Circuits These are PbFree Devices* MXIMUM RTINS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) (T J = 40 to 110 C, Sine Wave, V DRM, V RRM V 50 Hz to 60 Hz) MCR723 MCR726 MCR On-State RMS Current (180 Conduction ngles; T C = 83 C) Peak Non-Repetitive Surge Current (1/2 Cycle, 60 Hz, T J = 110 C) I T(RMS) 8.0 I TSM 100 Circuit Fusing Considerations (t = 8.3 ms) I 2 t 40 2 s Forward Peak ate Voltage (t 10 s, T C = 83 C) Forward Peak ate Current (t 10 s, T C = 83 C) Forward Peak ate Power (t 10 s, T C = 83 C) V M 5.0 V I M 1.0 P M 5.0 W verage ate Power (t = 8.3 ms, T C = 83 C) P (V) 0.75 W Operating Junction Temperature Range T J 40 to +110 C Storage Temperature Range T stg 40 to +150 C Mounting Torque 8.0 in. lb. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs 8 MPERES RMS 100 thru 600 VOLTS Littelfuse.com TO220B CSE STYLE 3 TO220B CSE STYLE 3 PIN SSINMENT 1 Cathode 2 node 3 ate 4 node MRKIN ND ORDERIN INFORMTION See detailed marking, ordering, and shipping information in the package dimensions section on page 4 of this data sheet. K 1 Publication Order Number:
2 THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 2.2 C/W Thermal Resistance, Junctiontombient R J 60 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Secs T L 260 C ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted.) OFF CHRCTERISTICS Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note 2) (V K = Rated V DRM or V RRM ; R K = 1 k ) T J = 25 C T J = 110 C I DRM, I RRM High Logic Level Supply Current from V CC I CCH 4 4 ON CHRCTERISTICS Peak Forward On-State Voltage (I TM = 16 Peak, Pulse Width 1 ms, Duty Cycle 2%) V TM V ate Trigger Current (Continuous dc) (Note 3) (V D = 12 V, R L = 100 ) ate Trigger Voltage (Continuous dc) (Note 3) (V D = 12 V, R L = 100 ) ate NonTrigger Voltage (V D = 12 Vdc, R L = 100, T J = 110 C) Holding Current (V D = 12 V, Initiating Current = 200 m, R K = 1 k ) ate Controlled Turn-On Time (V D = Rated V DRM, I TM = 16, I = 2 m) I T V T V V D 0.1 V I H 6.0 m t gt 1.0 s DYNMIC CHRCTERISTICS Critical Rate-of-Rise of Off-State Voltage dv/dt 10 V/ s (V D = Rated V DRM, R K = 1 k, T J = 110 C, Exponential Waveform) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Ratings apply for negative gate voltage or R K = 1 k. Devices shall not have a positive gate voltage concurrently with a negative voltage on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 3. R K current not included in measurement. 2 Publication Order Number:
3 Voltage Current Characteristic of SCR + Current node + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse valanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) node T C, MXIMUM CSE TEMPERTURE ( C) α = α = Conduction ngle dc 8.0 P, V VERE POWER DISSIPTION (WTTS) α α α = Conduction ngle α = dc 8.0 I T(V), VERE ON STTE CURRENT (MP) I T(V), VERE ON STTE CURRENT (MP) Figure 1. verage Current Derating Figure 2. OnState Power Dissipation 3.0 NORMLIZED TE CURRENT 2.0 V D = 12 Vdc T J, JUNCTION TEMPERTURE ( C) V T, TE TRIER VOLTE (VOLTS) V D = 12 Vdc T J, JUNCTION TEMPERTURE ( C) Figure 3. Normalized ate Current Figure 4. ate Voltage 3 Publication Order Number:
4 MRKIN DIRMS TO220B CSE TO220B CSE Y WW MCR72x K Y WW MCR726T K Y WW MCR72x K = ssembly Location = Year = Work Week = Device Code x = 3, 6, 8, or 8T = PbFree Package = Diode Polarity Y WW MCR726T K = ssembly Location = Year = Work Week = Device Code = PbFree Package = Diode Polarity ORDERIN INFORMTION MCR723 Device Package Shipping TO220B (PbFree) 500 Units / Box MCR726 MCR726T MCR728 MCR728T TO220B (PbFree) TO220B (PbFree) TO220B (PbFree) TO220B (PbFree) 500 Units / Box 50 Units / Rail 500 Units / Box 50 Units / Rail 4 Publication Order Number:
5 PCKE DIMENSIONS TO220 CSE ISSUE O H Q Z L V B 4 N D K F T U C T SETIN PLNE J S R NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y14.5M, CONTROLLIN DIMENSION: INCH. 3. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREULRITIES RE LLOWED. INCHES MILLIMETERS DIM MIN MX MIN MX B C D F H J K L N Q R S T U V Z STYLE 3: PIN 1. CTHODE 2. NODE 3. TE 4. NODE 5 Publication Order Number:
6 PCKE DIMENSIONS TO220 CSE ISSUE H H Q Z L V B 4 N D K F T U R J S C T SETIN PLNE NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y14.5M, CONTROLLIN DIMENSION: INCH. 3. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREULRITIES RE LLOWED. INCHES MILLIMETERS DIM MIN MX MIN MX B C D F H J K L N Q R S T U V Z STYLE 3: PIN 1. CTHODE 2. NODE 3. TE 4. NODE Littelfuse products are not designed for, and shall not be used for, any purpose (including, without limitation, automotive, military, aerospace, medical, life-saving, life-sustaining or nuclear facility applications, devices intended for surgical implant into the body, or any other application in which the failure or lack of desired operation of the product may result in personal injury, death, or property damage) other than those expressly set forth in applicable Littelfuse product documentation. Warranties granted by Littelfuse shall be deemed void for products used for any purpose not expressly set forth in applicable Littelfuse documentation. Littelfuse shall not be liable for any claims or damages arising out of products used in applications not expressly intended by Littelfuse as set forth in applicable Littelfuse documentation. The sale and use of Littelfuse products is subject to Littelfuse Terms and Conditions of Sale, unless otherwise agreed by Littelfuse. Littelfuse.com 6 Publication Order Number:
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BTA25-600CW3G, BTA25-800CW3G
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BTA30H-600CW3G, BTA30H-800CW3G
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MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
2N6071A/B Series. Thyristors. Surface Mount 200V-600W > 2N6071A/B Series. Description
2N6071A/B Series Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate
MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
MCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art
MCR. 1A (Amperes) MCR22 Series 1.5A. Product Model Reference & Naming TO-92 MCR22-8 MCR22-10 MCR22-12 MCR22-12S. 200μA MCR22-6S MCR22-12M.
1.5 Series SCR: 1.5 igh Sensitive SCRs DESCRIPTION ighly sensitive triggering levels, the BT169 Series SCRs is suitable for all applications, where the available gate current is limited, such as capacitive
1SMA5.0AT3G Series, SZ1SMA5.0AT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional
5.AT3G Series, SZ5.AT3G Series 4 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
Distributed by: www.jameco.com -800-8-44 The content and copyrights of the attached material are the property of its owner. Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used
P6SMB6.8AT3G Series, SZP6SMB6.8AT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
P66.8AT3G Series, SZP66.8AT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy
MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS
MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description
MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
1.5SMC6.8AT3G Series, SZ1.5SMC6.8AT3G Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.6.8AT3G Series, SZ.6.8AT3G Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The series is designed to protect voltage sensitive components from high voltage, high energy transients.
MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS
MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction
MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
NGD8205ANT4G. Ignition IGBT. 20 Amp, 350 Volt, N Channel DPAK. 20 A, 350 V V CE(on) = 1.3 I C = 10 A, V GE 4.5 V
NGD25AN Ignition IGBT 2 Amp, 35 Volt, N Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in
NYE08-10B6TG. Protected TRIAC
NYE8-B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package