MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS
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1 MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power supplies; or wherever full wave silicon gate controlled devices are needed. Off State Voltages to 800 All Diffused and Glass Passivated Junctions for Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Thermal Resistance and High Heat Dissipation Gate Triggering Guaranteed in Four Modes Device Marking: Logo, Device Type, e.g., MAC3A6, Date Code TRIACS 5 AMPERES RMS 00 thru 800 VOLTS MT G MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (1) (T J = 0 to 15 C, Sine Wave 50 to 60 Hz, Gate Open) MAC3A6 MAC3A8 MAC3A On State Current RMS Full Cycle Sine Wave 50 to 60 Hz (T C = 80 C) Peak Non repetitive Surge Current (One Full Cycle, 60 Hz, T C = 80 C) Preceded and followed by rated current V DRM, V RRM I T(RMS) 5 A I TSM 50 A Circuit Fusing (t = 8.3 ms) I t 60 A s Peak Gate Current (t μsec; T C = +80 C) Peak Gate Voltage (t μsec; T C = +80 C) Peak Gate Power (t μsec; T C = +80 C) Average Gate Power (T C = 80 C, t = 8.3 ms) I GM A V GM P GM 0 Watts P G(AV) Watts Operating Junction Temperature Range T J 0 to 15 C Storage Temperature Range T stg 0 to 150 C Mounting Torque 8.0 in. lb. (1) V DRM and V RRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. ORDERING INFORMATION Device Package Shipping MAC3A6 TO0AB 500/Box MAC3A8 MAC3A 1 3 TO 0AB CASE 1A STYLE TO0AB TO0AB PIN ASSIGNMENT 1 Main Terminal 1 Main Terminal 3 Gate Main Terminal 500/Box 500/Box Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 006 August, 006 Rev. 1 Publication Order Number: MAC3A/D
2 THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case R θjc 1. C/W Thermal Resistance, Junction to Ambient R θja 60 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for Seconds T L 60 C ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise indicated; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T J = 5 C (V D = Rated V DRM, V RRM ; Gate Open) T J = 15 C ON CHARACTERISTICS Peak On State Voltage (I TM = 35 A Peak, Pulse Width ms, Duty Cycle %) Gate Trigger Current (Continuous dc) (V D = 1 V, R L = 0 Ω) MT(+), G(+); MT( ), G( ); MT(+), G( ) MT( ), G(+) Gate Trigger Voltage (Continuous dc) (V D = 1 V, R L = 0 Ω) MT(+), G(+); MT( ), G( ); MT(+), G( ) MT( ), G(+) Gate Non trigger Voltage (V D = 1 V, T J = 15 C, R L = 0 Ω) All Quadrants Holding Current (V D = 1 Vdc, Gate Open, Initiating Current = 00 ma) Turn On Time (V D = Rated V DRM, I TM = 35 A Peak, I G = 00 ma) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (V D = Rated V DRM, Exponential Waveform, T C = 15 C) Critical Rate of Rise of Commutation Voltage (V D = Rated V DRM, I TM = 35 A Peak, Commutating di/dt = 1.6 A/ms, Gate Unenergized, T C = 80 C) I DRM, I RRM μa ma I GT V GT V GD 0. ma 50 ma t gt 1.5 μs dv/dt 0 V/μs dv/dt(c) 5.0 V/μs
3 Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol V DRM I DRM V RRM I RRM Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current I RRM at V RRM on state Quadrant 1 MainTerminal + Maximum On State Voltage Holding Current off state + Voltage I DRM at V DRM Quadrant 3 MainTerminal Quadrant Definitions for a Triac MT POSITIVE (Positive Half Cycle) + (+) MT (+) MT Quadrant II ( ) I GT (+) I GT Quadrant I I GT + I GT ( ) MT ( ) MT Quadrant III ( ) I GT (+) I GT Quadrant IV MT NEGATIVE (Negative Half Cycle) All polarities are referenced to. With in phase signals (using standard AC lines) quadrants I and III are used. 3
4 T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) I T(RMS), RMS ON STATE CURRENT (AMPS), AVERAGE POWER DISSIPATION (WATTS) PD I T(RMS), RMS ON STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure. On State Power Dissipation NORMALIZED CURRENT 3.0 V D = 1 V R L = 0 Ω NORMALIZED VOLTAGE 3.0 V D = 1 V R L = 0 Ω Figure 3. Typical Gate Trigger Current Figure. Typical Gate Trigger Voltage NORMALIZED HOLD CURRENT I TM = 00 ma Gate Open i TM, INSTANTANEOUS ON STATE CURRENT (AMPS) T J = 5 C 3.0.0, INSTANTANEOUS ON STATE VOLTAGE (VOLTS) Figure 5. Typical Hold Current Figure 6. Typical On State Characteristics
5 PACKAGE DIMENSIONS TO 0AB CASE 1A 07 ISSUE Z H Q Z L V G B 1 3 N D A K F T U C T SEATING PLANE S R J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE : PIN 1. MAIN TERMINAL 1. MAIN TERMINAL 3.. MAIN TERMINAL ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8017 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MAC3A/D
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MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
MMT05B230T3, MMT05B260T3, MMT05B310T3. Thyristor Surge Protectors. High Voltage Bidirectional TSPD ( )
,, Preferred Devices Thyristor Surge Protectors High oltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
NDF10N62Z. N-Channel Power MOSFET
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V
MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS
Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors
2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MR2520LRL. Overvoltage Transient Suppressor OVERVOLTAGE TRANSIENT SUPPRESSOR VOLTS
Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
NGTB15N60EG. IGBT - Short-Circuit Rated. 15 A, 600 V V CEsat = 1.7 V
NGTB5N6EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective NonPunch Through (NPT) Trench construction, and provides superior performance in
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
MJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
Characteristic Symbol Max Unit P D 625 mw
Advance Information Integrated Relay/Solenoid Driver Optimized to Switch 3 V to 5 V Relays from a 5 V Rail Compatible with TX and TQ Series Telecom Relays Rated up to 625 mw at 3 V to 5 V Features Low
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.