MCR106-6, MCR Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 AMPERES RMS 400 thru 600 VOLTS
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1 MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. Features Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability PbFree Packages are Available* MAXIMUM RATINGS (T J = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) (T J = 40 to 110 C, Sine Wave 50 to 60 V DRM, V RRM V Hz, R GK = 1 k ) MCR MCR On-State RMS Current, (T C = 9 C) (180 Conduction Angles) I T(RMS) 4.0 A Average OnState Current, (180 Conduction Angles; T C = 9 C) Peak Non-repetitive Surge Current (1/ Cycle, Sine Wave 60 Hz, T J = 110 C) I T(AV).55 A I TSM 5 A Circuit Fusing Considerations, (t = 8. ms) I t.6 A s Forward Peak Gate Power, Forward Average Gate Power, (T C = 9 C, t = 8. ms) Forward Peak Gate Current, Peak Reverse Gate Voltage, P GM 0.5 W P G(AV) 0.1 W I GM 0. A V RGM 6.0 V Operating Junction Temperature Range T J 40 to +110 C Storage Temperature Range T stg 40 to +150 C Mounting Torque (Note ) 6.0 in. lb. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.. Torque rating applies with use of compression washer (B500-F006 or equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal resistance. Anode lead and heatsink contact pad are common. (See AN09B). For soldering purposes (either terminal connection or device mounting), soldering temperatures shall not exceed +00 C. For optimum results, an activated flux (oxide removing) is recommended. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1 SCRs 4 AMPERES RMS 400 thru 600 VOLTS A 1 Preferred devices are recommended choices for future use and best overall value. G YWW CR 106xG K TO5AA CASE 77 STYLE MARKING DIAGRAM Y = Year WW = Work Week CR106x = Device Code x = 6 or 8 G = PbFree Package PIN ASSIGNMENT Cathode Anode Gate ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Semiconductor Components Industries, LLC, 008 November, 008 Rev. 5 1 Publication Order Number: MCR106/D
2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC.0 C/W Thermal Resistance, JunctiontoAmbient R JA 75 C/W Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T L 60 C ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (V AK = Rated V DRM or V RRM ; R GK = 1 k ) T J = 5 C T J = 110 C ON CHARACTERISTICS Peak Forward OnState Voltage (Note ) (I TM = 4 A Peak) Gate Trigger Current (Continuous dc) (Note 4) (V AK = 7 Vdc, R L = 100 ) (T C = 40 C) Gate Trigger Voltage (Continuous dc) (Note 4) (V AK = 7 Vdc, R L = 100 ) Gate Non-Trigger Voltage (Note 4) (V AK = 1 Vdc, R L = 100, T J = 110 C) Holding Current (V AK = 7 Vdc, Initiating Current = 00 ma, R GK = 1 k ) DYNAMIC CHARACTERISTICS Critical RateofRise of OffState Voltage (T J = 110 C, R GK = 1 k ). Pulse Test: Pulse Width 1.0 ms, Duty Cycle 1%. 4. R GK current is not included in measurement. I DRM, I RRM V TM.0 V I GT V GT 1.0 V V GD 0. V I H 5.0 ma dv/dt 10 V/ s ORDERING INFORMATION Device Package Shipping MCR1066 TO5AA 500 Units / Box MCR1066G TO5AA (PbFree) 500 Units / Box MCR1068 TO5AA 500 Units / Box MCR1068G TO5AA (PbFree) 500 Units / Box
3 Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode CURRENT DERATING T C, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) α π 98 f = 60 Hz α = dc I T(AV), AVERAGE FORWARD CURRENT (AMP) 4.0 T A, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) α f = 60 Hz α = dc I T(AV), AVERAGE FORWARD CURRENT (AMP) π 0.8 Figure 1. Maximum Case Temperature Figure. Maximum Ambient Temperature
4 PACKAGE DIMENSIONS H Q B U 1 F A K V G S D PL M C J R 0.5 (0.010) M A M B M 0.5 (0.010) M A M B M TO5 CASE 7709 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH THRU -08 OBSOLETE, NEW STANDARD INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G BSC.9 BSC H J K M 5 TYP 5 TYP Q R S U V STYLE : PIN 1. CATHODE. ANODE. GATE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 516, Denver, Colorado 8017 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MCR106/D
5 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ON Semiconductor: MCR106-6G MCR106-8G
C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light,
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
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MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
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NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
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MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
MUN2111T1 Series, SMUN2111T1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNT Series, SMUNT Series Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
Adc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
MMT05B350T3G. Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS
Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning,
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.
NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications