MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
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1 MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. Features Low Forward Voltage C Operating Junction Temperature Epoxy Meets UL 9 in Compact Size Lead Formed for Surface Mount Pb Free Packages are Available SCHOTTKY BARRIER RECTIFIER 8. AMPERES, VOLTS MARKING DIAGRAM Mechanical Characteristics Case: Epoxy, Molded Weight:. Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 6 C Max. for Seconds Shipped 7 Units Per Plastic Tube Available in 6 mm Tape and Reel, Units Per in Reel, by Adding a T Suffix to the Part Number Y WW CASE 69C = Year = Work Week ORDERING INFORMATION YWW B 8L Device Package Shipping MBRD8L 7 Units/Rail MBRD8LG (Pb Free) 7 Units/Rail MBRD8LT /Tape & Reel MBRD8LTG (Pb Free) /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, January, Rev. 6 Publication Order Number: MBRD8L/D
2 MBRD8L MAXIMUM RATINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated V R, T C = 88 C) Peak Repetitive Forward Current (At Rated V R, Square Wave, khz, T C = 8 C) Non Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 6 Hz) Repetitive Avalanche Current (Current Decaying Linearly to Zero in s, Frequency Limited by T Jmax ) Rating Symbol Value Unit V RRM V RWM V R V I F(AV) 8. A I FRM 6 A I FSM 7 A I AR. A Storage / Operating Case Temperature T stg 6 to + C Operating Junction Temperature T J 6 to + C Voltage Rate of Change (Rated V R ) dv/dt, V/ s Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance Junction to Case R JC.8 C/W Thermal Resistance Junction to Ambient (Note ) R JA 8 C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note ) (i F = 8 Amps, T C = + C) (i F = 8 Amps, T C = + C) Maximum Instantaneous Reverse Current (Note ) (Rated Voltage, T C = + C) (Rated Voltage, T C = + C). Rating applies when surface mounted on the minimum pad size recommended.. Pulse Test: Pulse Width = s, Duty Cycle %. V F.. I R. V ma
3 MBRD8L TYPICAL CHARACTERISTICS if, INSTANTANEOUS FORWARD CURRENT (ma) T J = C C v F, INSTANTANEOUS VOLTAGE (VOLTS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS T J = C 7 C. C V F, INSTANTANEOUS VOLTAGE (VOLTS) Figure. Maximum Forward Voltage Figure. Typical Forward Voltage I R, REVERSE CURRENT (ma).. T J = C C C I R, REVERSE CURRENT (ma). T J = C 7 C C C.. V F, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) Figure. Maximum Reverse Current Figure. Typical Reverse Current
4 MBRD8L TYPICAL CHARACTERISTICS C, CAPACITANCE (pf) T J = C TYPICAL MAXIMUM V R, REVERSE VOLTAGE (VOLTS) Figure. Maximum and Typical Capacitance IF(AV), AVERAGE FORWARD CURRENT (AMPS) T J = C (RESISTIVE LOAD) R JA = 6 C/W IF(AV), AVERAGE FORWARD CURRENT (AMPS) (RESISTIVE LOAD) T J = C R JA = C/W SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE T C, CASE TEMPERATURE ( C) T A, AMBIENT TEMPERATURE ( C) Figure 6. Current Derating, Infinite Heatsink Figure 7. Current Derating IF(AV), AVERAGE FORWARD CURRENT (AMPS)..... (RESISTIVE LOAD) T J = C R JA = 8 C/W SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE T A, AMBIENT TEMPERATURE ( C) PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATT T J = C (RESISTIVE LOAD) I F(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 8. Current Derating, Free Air Figure 9. Forward Power Dissipation
5 MBRD8L PACKAGE DIMENSIONS CASE 69C ISSUE O B C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH. V S F R G L A K D PL J H. (.) M T E U Z INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D E F G.8 BSC.8 BSC H J K L.9 BSC.9 BSC R S...6. U.. V Z..9 SOLDERING FOOTPRINT* SCALE : mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
6 MBRD8L SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 88 USA Phone: or 8 86 Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MBRD8L/D
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MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
1.5SMC6.8AT3 Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.SMC6.8AT3 Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They
NTLJD4116NT1G. Power MOSFET. 30 V, 4.6 A, Cool Dual N Channel, 2x2 mm WDFN Package
NTLJDN Power MOSFET V,. A, Cool Dual N Channel, x mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction x mm Footprint Same as SC 88 Lowest R DS(on) Solution
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
MJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
1SMA10CAT3G Series, SZ1SMA10CAT3G Series. 400 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional
110CAT3G Series, SZ110CAT3G Series 400 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional The series is designed to protect voltage sensitive components from high voltage, high energy transients.
P6SMB11CAT3G Series, SZP6SMB11CAT3G Series. 600 Watt Peak Power Zener Transient Voltage Suppressors. Bidirectional*
P6SMBCAT3G Series, SZP6SMBCAT3G Series 600 Watt Peak Power Zener Transient Voltage Suppressors Bidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
MMSZxxxET1 Series, SZMMSZxxxET1G Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZxxxET Series, SZMMSZxxxETG Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
1SMB59xxBT3 Series, SZ1SMB59xxT3G Series. 3 Watt Plastic Surface Mount Zener Voltage Regulators
9xxBT Series, SZ9xxTG Series Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of W Zener diodes offers the following advantages. Features Zener Voltage Range. V to V ESD Rating
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors
BDW42 NPN,, BDW47 PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note T L = 2 C, Pulse Width = ms P PK 600 W DC Power T L = 7 C Meas
600 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent
1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series. 1.5 Watt Plastic Surface Mount Zener Voltage Regulators
59xxBT3 Series, SZ59xxBT3G Series.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of.5 Watt Zener Diodes offers the following advantages. Features Standard Zener Breakdown
Ultrafast E Series with High Reverse Energy Capability
Ultrafast E Series with High Reverse Energy Capability... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
MJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
MMQA Quad Common Anode Series Preferred Devices. SC 74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC 74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
MCR106-6, MCR Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 AMPERES RMS 400 thru 600 VOLTS
MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
MPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current