2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
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1 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO92/TO-226 package which is readily adaptable for use in automatic insertion equipment. Features Sensitive Gate Trigger Current 200 Maximum Low Reverse and Forward Blocking Current Maximum, T C = 1 C Low Holding Current 5 m Maximum Passivated Surface for Reliability and Uniformity Device Marking: Device Type, e.g., 2N60, Date Code PbFree Packages are vailable* SILICON CONTROLLED RECTIFIERS RMS, G K MRKING DIGRM TO92 CSE 29 STYLE 2N xx YWW xx Y WW Specific Device Code = Year = Work Week PIN SSIGNMENT Cathode Gate node ORDERING INFORMTION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2008 November, 2008 Rev. 9 1 Publication Order Number: 2N60/D
2 MXIMUM RTINGS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive OffState oltage (Note 1) (T J = 40 to 1 C, Sine Wave, to 60 Hz, R GK = 1 k ) 2N60 2N61 2N62 2N64 DRM, RRM On-State Current RMS (180 Conduction ngles; T C = 80 C) I T(RMS) *verage On-State Current (180 Conduction ngles) (T C = 67 C) (T C = 2 C) I T() 1 55 *Peak Non-repetitive Surge Current, T = 25 C (1/2 cycle, Sine Wave, 60 Hz) I TSM Circuit Fusing Considerations (t = 8.3 ms) I 2 t s *verage On-State Current (180 Conduction ngles) (T C = 67 C) (T C = 2 C) I T() 1 55 *Forward Peak Gate Power (Pulse Width sec; T = 25 C) P GM 0.1 W *Forward verage Gate Power (T = 25 C, t = 8.3 ms) P G() 0.01 W *Forward Peak Gate Current (Pulse Width sec; T = 25 C) I GM *Reverse Peak Gate oltage (Pulse Width sec; T = 25 C) RGM *Operating Junction Temperature Range T J 40 to +1 C *Storage Temperature Range T stg 40 to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERML CHRCTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, JunctiontoCase (Note 2) R JC 75 C/W Thermal Resistance, Junctiontombient R J 200 C/W 2. This measurement is made with the case mounted flat side down on a heatsink and held in position by means of a metal clamp over the curved surface. *Indicates JEDEC Registered Data. 2
3 ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHRCTERISTICS *Peak Repetitive Forward or Reverse Blocking Current (Note 3) ( K = Rated DRM or RRM ) T C = 25 C T C = 1 C ON CHRCTERISTICS *Peak Forward OnState oltage (Note 4) (I TM = 1.2 T = 25 C) I DRM, I RRM TM 1.7 Gate Trigger Current (Continuous DC) (Note 5) *( K = 7.0 dc, R L = 0 ) T C = 25 C T C = 40 C Gate Trigger oltage (Continuous DC) (Note 5) T C = 25 C *( K = 7.0 dc, R L = 0 ) T C = 40 C *Gate NonTrigger oltage ( K = Rated DRM, R L = 0 ) T C = 1 C Holding Current (Note 3) T C = 25 C *( K = 7.0 dc, initiating current = 20 m) T C = 40 C I GT GT GD 0.1 I H m Turn-On Time Delay Time Rise Time (I GT = m, D = Rated DRM, Forward Current =, di/dt = 6.0 / s t d t r s Turn-Off Time (Forward Current = pulse, Pulse Width = s, 0.1% Duty Cycle, di/dt = 6.0 / s, dv/dt = 20 / s, I GT = 1 m) 2N60, 2N61 2N62, 2N64 t q 30 s DYNMIC CHRCTERISTICS Critical Rate of Rise of OffState oltage (Rated DRM, Exponential, R GK = 1 k ) dv/dt 30 / s 3. R GK = 00 is included in measurement. 4. Forward current applied for 1 ms maximum duration, duty cycle 1%. 5. R GK current is not included in measurement. *Indicates JEDEC Registered Data. oltage Current Characteristic of SCR + Current node + Symbol DRM I DRM RRM I RRM TM I H Parameter Peak Repetitive Off State Forward oltage Peak Forward Blocking Current Peak Repetitive Off State Reverse oltage Peak Reverse Blocking Current Peak on State oltage Holding Current I RRM at RRM on state Reverse Blocking Region (off state) Reverse valanche Region TM I H + oltage I DRM at DRM Forward Blocking Region (off state) node 3
4 CURRENT DERTING T C, MXIMUM LLOWBLE CSE TEMPERTURE ( C) = 30 = CONDUCTION NGLE 60 CSE MESUREMENT POINT - CENTER OF FLT PORTION I T(), ERGE ON STTE CURRENT (MP) dc Figure 1. Maximum Case Temperature a T, MXIMUM LLOWBLE MBIENT TEMPERTURE ( C) = CONDUCTION NGLE TYPICL PRINTED CIRCUIT BORD MOUNTING = I T(), ERGE ON STTE CURRENT (MP) Figure 2. Maximum mbient Temperature dc CURRENT DERTING i T, INSTNTNEOUS ON STTE CURRENT (MP) T J = 1 C 25 C I TSM, PEK SURGE CURRENT (MP) P (), MXIMUM ERGE POWER DISSIPTION (WTTS) NUMBER OF CYCLES Figure 4. Maximum NonRepetitive Surge Current a = CONDUCTION NGLE = dc v T, INSTNTNEOUS ON STTE OLTGE (OLTS) Figure 3. Typical Forward oltage I T(), ERGE ON STTE CURRENT (MP) Figure 5. Power Dissipation 4
5 r(t), TRNSIENT THERML RESISTNCE NORMLIZED t, TIME (SECONDS) Figure 6. Thermal Response TYPICL CHRCTERISTICS G, GTE TRIGGER OLTGE (OLTS) K = 7.0 R L = 0 R GK = k T J, JUNCTION TEMPERTURE ( C) Figure 7. Typical Gate Trigger oltage I GT, GTE TRIGGER CURRENT (NORMLIZED) N N60 61 K = 7.0 R L = T J, JUNCTION TEMPERTURE ( C) Figure 8. Typical Gate Trigger Current I H, HOLDING CURRENT (NORMLIZED) N62 64 K = 7.0 R L = 0 R GK = k 2N60, T J, JUNCTION TEMPERTURE ( C) Figure 9. Typical Holding Current 5
6 ORDERING INFORMTION Device Package Shipping 2N60 TO92 5,000 Units / Box 2N60G TO92 (PbFree) 5,000 Units / Box 2N60RLR TO92 2,000 / Tape & Reel 2N60RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N60RLRM TO92 2,000 / mmo Pack 2N60RLRMG TO92 (PbFree) 2000 / mmo Pack 2N61 TO92 5,000 Units / Box 2N61G TO92 (PbFree) 5,000 Units / Box 2N61RLR TO92 2,000 / Tape & Reel 2N61RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N62 TO92 5,000 Units / Box 2N62G TO92 (PbFree) 5,000 Units / Box 2N62RLR TO92 2,000 / Tape & Reel 2N62RLRG TO92 (PbFree) 2,000 / Tape & Reel 2N64 TO92 5,000 Units / Box 2N64RLR TO92 2,000 / Tape & Reel 2N64RLRM TO92 2,000 / mmo Pack 2N64RLRMG 2N64RLRG TO92 (PbFree) TO92 (PbFree) 2,000 / mmo Pack 2000 / Tape & Reel 2N64G TO92 (PbFree) 00 Units / Box For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 6
7 PCKGE DIMENSIONS R N B TO92 (TO226) CSE 2911 ISSUE M STRIGHT LED BULK PCK NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI Y14.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PCKGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LED DIMENSION IS UNCONTROLLED IN P ND BEYOND DIMENSION K MINIMUM. P L SETING INCHES MILLIMETERS PLNE K DIM MIN MX MIN MX B C D X X D G H G J H J K C L N P SECTION XX R N R B BENT LED TPE & REEL MMO PCK NOTES: 1. DIMENSIONING ND TOLERNCING PER SME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PCKGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LED DIMENSION IS UNCONTROLLED IN P ND BEYOND DIMENSION K MINIMUM. P T MILLIMETERS SETING PLNE K DIM MIN MX B C D G X X D G J K J N P C R SECTION XX 1 STYLE : N PIN 1. CTHODE 2. GTE 3. NODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative 2N60/D
2N5060 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors
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MARKING DIAGRAMS MAXIMUM RATINGS
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MARKING DIAGRAMS MAXIMUM RATINGS
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Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
MUR220. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 2.0 AMPERES 200 VOLTS
MUR22 Preferred Device SWITCHMODE Power Rectifier These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. eatures Ultrafast 25 Nanosecond
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
MAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS
MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
MMT05B350T3G. Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS
Preferred Devices Product Preview Thyristor Surge Protectors High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning,
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
2N6027, 2N6028. Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers. PUTs 40 VOLTS 300 mw
Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as R BB, η, I V, and I P by
1N5908RL4G Watt Mosorb Zener Transient Voltage Suppressors. Unidirectional*
Preferred Device 5 Watt Mosorb Zener Transient oltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers
MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS
SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode
MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package
MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
MCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
NPN - MPS8099; PNP - MPS8599. Amplifier Transistors. Voltage and Current are Negative for PNP Transistors. MAXIMUM RATINGS
- MPS899; - MPS8599 Amplifier Transistors Voltage and Current are Negative for Transistors COLLECTOR 3 COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 8 CollectorBase
1N6373-1N6381 Series (ICTE-5 - ICTE-36) 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors. Unidirectional*
N6373 - N638 Series (ICTE-5 - ICTE-36) 5 Watt Peak Power Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage,
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V
MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
NTD4813N. Power MOSFET 30 V, 40 A, Single N -Channel, DPAK/IPAK
NTD813N Power MOSFET 3 V,, Single N -Channel, DPK/IPK Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These