MBR140SF, NRVB140SF. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.

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MBR14SF, NRVB14SF Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode.

1 MBR14SF, NRVB14SF Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDs and PCMCI cards. Typical applications are C DC and DC DC converters, reverse battery protection, and Oring of multiple supply voltages and any other application where performance and size are critical. Features Guardring for Stress Protection Low Forward Voltage 125 C Operating Junction Temperature Epoxy Meets UL in Package Designed for Optimal utomated Board ssembly ESD Rating: Human Body Model = 3B Machine Model = C NRVB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q11 Qualified and PPP Capable These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics Device Marking: L4F Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: ll External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 26 C Max. for 1 Seconds SCHOTTKY BRRIER RECTIFIER 1. MPERES 4 VOLTS CSE 498 MRKING DIGRM L4F = Specific Device Code M = Date Code = Pb Free Package) (Note: Microdot may be in either location) ORDERING INFORMTION Device Package Shipping MBR14SFT1G NRVB14SFT1G MBR14SFT3G NRVB14SFT3G L4FM 3, / Tape & Reel ** 3, / Tape & Reel ** 1, / Tape & Reel *** 1, / Tape & Reel *** ** 8 mm Tape, 7 Reel *** 8 mm Tape, 13 Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Semiconductor Components Industries, LLC, 214 ugust, 214 Rev. 6 1 Publication Order Number: MBR14SFT1/D

2 MBR14SF, NRVB14SF MXIMUM RTINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Symbol Value Unit V RRM V RWM V R 4 V verage Rectified Forward Current (t Rated V R, T L = 112 C) I O 1. Peak Repetitive Forward Current (t Rated V R, Square Wave, 1 khz, T L = 95 C) I FRM 2. Non Repetitive Peak Surge Current (Non Repetitive peak surge current, halfwave, single phase, 6 Hz) I FSM 3 Storage Temperature T stg 55 to 15 C Operating Junction Temperature T J 55 to 125 C Voltage Rate of Change (Rated V R, ) dv/dt 1, V/s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERML CHRCTERISTICS Thermal Resistance, Junction to Lead (Note 1) Thermal Resistance, Junction to Lead (Note 2) Thermal Resistance, Junction to mbient (Note 1) Thermal Resistance, Junction to mbient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 7 mm 2 ). Characteristic Symbol Value Unit R tjl R tjl R tja R tja C/W ELECTRICL CHRCTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 V F V (I F = ) (I F = 1. ) (I F = 3. ) Maximum Instantaneous Reverse Current (Note 3), See Figure 4 I R m (V R = 4 V) (V R = 2 V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 25 s, Duty Cycle 2%

3 MBR14SF, NRVB14SF i F, INSTNTNEOUS FORWRD CURRENT (MPS) 1 1. T J = 4 C v F, INSTNTNEOUS FORWRD VOLTGE (VOLTS) Figure 1. Typical Forward Voltage I F, INSTNTNEOUS FORWRD CURRENT (MPS) V F, MXIMUM INSTNTNEOUS FORWRD VOLTGE (VOLTS) Figure 2. Maximum Forward Voltage I R, REVERSE CURRENT (MPS) 1E 3 1E 3 1.E 3 1E 6 1E 6 1.E 6 I R, MXIMUM REVERSE CURRENT (MPS) 1.E+ 1E 3 1E 3 1.E 3 1E 6 1E V R, REVERSE VOLTGE (VOLTS) V R, REVERSE VOLTGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current I O, VERGE FORWRD CURRENT (MPS) dc SQURE WVE I pk /I o = I pk /I o = 5 I pk /I o = 1 I pk /I o = 2 T L, LED TEMPERTURE ( C) freq = 2 khz P FO, VERGE POWER DISSIPTION (WTTS) I pk /I o = 2.2 I pk /I o = 1 I pk /I o = 5 I pk /I o = SQURE WVE I O, VERGE FORWRD CURRENT (MPS) dc Figure 5. Current Derating Figure 6. Forward Power Dissipation 3

4 MBR14SF, NRVB14SF C, CPCITNCE (pf) 1 1 T J, DERTED OPERTING TEMPERTURE ( C) C/W 235 C/W 13 C/W R J = 25.6 C/W V R, REVERSE VOLTGE (VOLTS) V R, DC REVERSE VOLTGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of T J therefore must include forward and reverse power effects. The allowable operating T J may be calculated from the equation: T J = T Jmax r(t)(pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable T J due to reverse bias under DC conditions only and is calculated as T J = T Jmax r(t)pr, where r(t) = Rthja. For other power applications further calculations must be performed. r(t), TRNSIENT THERML RESISTNCE D = SINGLE PULSE Test Type > Min Pad < Die Size 75% mils P (pk) t1 t 2 DUTY CYCLE, D = t 1 /t 2 J = C/W 1 t 1, TIME (sec) Figure 9. Thermal Response 4

5 MBR14SF, NRVB14SF PCKGE DIMENSIONS CSE 498 ISSUE D D E 1 2 POLRITY INDICTOR OPTIONL S NEEDED TOP VIEW 1 END VIEW NOTES: 1. DIMENSIONING ND TOLERNCING PER NSI Y14.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS ND B DO NOT INCLUDE MOLD FLSH. 4. DIMENSIONS D ND J RE TO BE MESURED ON FLT SECTION OF THE LED: BETWEEN ND.25 MM FROM THE LED TIP. MILLIMETERS INCHES DIM MIN NOM MX MIN NOM MX b c D E L H E H E SIDE VIEW c RECOMMENDED SOLDERING FOOTPRINT* 2X b BOTTOM VIEW 2X L 2X X 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 8217 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative MBR14SFT1/D

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS

MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction