MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
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1 MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward oltage Drop 175 C Operating Junction Temperature pplications Power Supply Output Rectification Power Management Instrumentation Mechanical Characteristics Case: Epoxy, Molded Weight (pproximately): 1.9 rams (TO22B) 1.5 rams (TO262) Finish: ll External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 26 C Max. for 1 Seconds ESD Rating: Human Body Model B Machine Model C Epoxy Meets UL in 1 2 SCHOTTKY BRRIER RECTIFIER MPERES, 5 OLTS 1 TO22B CSE 221 STYLE 6 I 2 PK (TO262) CSE 18D PLSTIC 2, MRKIN DIRMS Y WW B5 K YWW B5CT K 1 2 Y WW K = ssembly Location = Year = Work Week = Polarity Designator = PbFree Device ORDERIN INFORMTION Device Package Shipping MBR5ST MBR5ST MBRB5CT1 TO22 TO22 (PbFree) TO262 (PbFree) 5 Units/Rail 5 Units/Rail 5 Units/Rail Semiconductor Components Industries, LLC, 26 March, 26 Rev. 1 Publication Order Number: MBR5/D
2 I MBR5 MXIMUM RTINS Peak Repetitive Reverse oltage Working Peak Reverse oltage DC Blocking oltage verage Rectified Current Per Device (T C = 1 C) Per Diode Peak Repetitive Forward Current, per Diode (Square Wave, R = 5, 2 khz) NonRepetitive Peak Surge Current (Surge pplied at Rated Load Conditions, Halfwave, Single Phase, 6 Hz) Rating Symbol alue Unit RRM RWM R I F() 15 5 I FRM I FSM 15 Peak Repetitive Reverse Current, per Diode (2. s, 1. khz) I RRM 2. Storage Temperature Range T stg 65 to +175 C Operating Junction Temperature (Note 1) T J 65 to +175 C Peak Surge Junction Temperature (Forward Current pplied) T J(pk) 175 C oltage Rate of Change (Rated R ) dv/dt 1, / s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junctiontombient: dp D /dt J < 1/R J. THERML CHRCTERISTICS (Per Diode) Symbol Characteristic Condition Min Typ Max Unit R θjc Thermal Resistance, JunctiontoCase 1.5 C/W ELECTRICL CHRCTERISTICS (Per Diode) F Instantaneous Forward oltage (Note 2) I F = 15 mp, T J = 25 C I F = 15 mp, T J = 5 C I F = mp, T J = 25 C I F = mp, T J = 5 C I R Instantaneous Reverse Current (Note 2) R = 5 olts, T J = 25 C R = 5 olts, T J = 5 C.2 m 2. Pulse Test: Pulse Width = μs, Duty Cycle 2.%. I F, INSTNTNEOUS FORWRD CURRENT (MPS) T J = 15 C. 5 C 1 T J = 5 C C C C 25 C C , REERSE CURRENT (m) F, INSTNTNEOUS FORWRD OLTE (OLTS) R, REERSE OLTE (OLTS) R 2 1 Figure 1. Typical Forward oltage Figure 2. Typical Reverse Current 2
3 I MBR5, ERE FORWRD CURRENT (MPS) F() SQURE WE RTED OLTE PPLIED R JC = 1.5 C/W I F(), ERE FORWRD CURRENT (MPS) SQURE WE. SQURE WE T C, CSE TEMPERTURE ( C) T, MBIENT TEMPERTURE ( C) RTED R PPLIED R J = C/W (With TO22 Heat Sink) R J = 6 C/W (No Heat Sink) Figure. Current Derating, Case Figure. Current Derating, mbient, ERE POWER DISSIPTION (WTTS) F() P (RESISTIE LOD) (CPCITTIE LOD) 2 1 I PK I I PK I 5. SQURE WE T J = 5 C C, CPCITNCE (pf) T J = 25 C f = 1 MHz 5 I F, ERE FORWRD CURRENT (MPS) R, REERSE OLTE () Figure 5. Forward Power Dissipation Figure 6. Capacitance
4 MBR5 PCKE DIMENSIONS TO22 PLSTIC CSE 2219 ISSUE H Q Z L B 1 2 N D K F T U S R J C T SETIN PLNE NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y1.5M, CONTROLLIN DIMENSION: INCH.. DIMENSION Z DEFINES ZONE WHERE LL BODY ND LED IRREULRITIES RE LLOWED. INCHES MILLIMETERS DIM MIN MX MIN MX B C D F H J K L N Q R S T U Z.8 2. STYLE 6: PIN 1. NODE 2. CTHODE. NODE. CTHODE
5 MBR5 PCKE DIMENSIONS I 2 PK (TO262) CSE 18D1 ISSUE B C B E NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y1.5M, CONTROLLIN DIMENSION: INCH. T SETIN PLNE W F 1 2 S K J H INCHES MILLIMETERS DIM MIN MX MIN MX B C D E F.2 REF.1 REF.1 BSC 2.5 BSC H J K S.9 REF 9.9 REF W D PL.1 (.5) M T B M SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERIN INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61, Phoenix, rizona US Phone: or 886 Toll Free US/Canada Fax: or 8867 Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Japan: ON Semiconductor, Japan Customer Focus Center 291 Kamimeguro, Meguroku, Tokyo, Japan 1551 Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. MBR5/D
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MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
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Vdc. Vdc. W W/ C T J, T stg 65 to +200 C P D
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MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MCR8N. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
MAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
BTA12-600C4G, BTA12-800C4G. Triacs Silicon Bidirectional Thyristors. TRIACS 12 AMPERES RMS 600 thru 800 VOLTS
BTA12-6C4G, BTA12-8C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
DPAK Surface Mount Package
MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices DPAK Surface Mount Package...in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following
MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS
MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe
BTB16-600CW3G, BTB16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-CW3G, BTB-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
MJL4281A (NPN) MJL4302A (PNP)
MJL428A (NPN) MJL42A (PNP) Preferred Device Complementary NPNPNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are PowerBase power transistors for high power audio. Features 3 V CollectorEmitter
2N6344. Silicon Bidirectional Thyristors. TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
BTA25H-600CW3G, BTA25H-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTAH-600CW3G, BTAH-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
MJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
BTA25-600CW3G, BTA25-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTA-6CW3G, BTA-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
2N6400 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 16 AMPERES RMS 50 thru 800 VOLTS
Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever halfwave silicon
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MAC3030 8G. Triacs. Silicon Bidirectional Thyristors TRIACS 8.0 AMPERES RMS 250 VOLTS
Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MMSZ4678ET1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ4678ET Series Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices provide a convenient
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
ULTRAFAST RECTIFIERS 8.0 AMPERES VOLTS
Preferred Devices... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: Ultrafast 25, 50 and 75 Nanosecond
MUN5211DW1T1 Series. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MUNDWT Series Preferred Devices Dual Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor
J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS
High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru