MUR2100E. Ultrafast E Series with High Reverse Energy Capability ULTRAFAST RECTIFIER 2.0 AMPERES, 1000 VOLTS
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1 Preferred Device SWITCHMODE Power Rectifier Ultrafast E Series with High Reverse Energy Capability These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features 0 mjoules valanche Energy Guaranteed Excellent Protection gainst Voltage Transients in Switching Inductive oad Circuits Ultrafast 75 Nanosecond Recovery Time 75 C Operating Junction Temperature ow Forward Voltage ow eakage Current High Temperature Glass Passivated Junction These are Pb Free Devices* Mechanical Characteristics: Case: Epoxy, Molded Weight: 0.4 Gram (pproximately) Finish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead Temperature for Soldering Purposes: 60 C Max for Seconds Polarity: Cathode Indicated by Polarity Band MXIMUM RTINGS Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating Symbol Value Unit V RRM V RWM V R 00 V verage Rectified Forward Current (Note ) I T = 5 C Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Operating Junction Temperature and Storage Temperature Range THERM CHRCTERISTICS I FSM 5 T J, T stg 65 to +75 Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction to mbient C R J (Note ) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. Pulse Test: Pulse Width = 00 s, Duty Cycle.0%. *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. UTRFST RECTIFIER.0 MPERES, 00 VOTS PSTIC XI ED CSE 59 MRKING DIGRM MUR0E YYWW = ssembly ocation Y = Year WW = Work Week = Pb Free Package (Note: Microdot may be in either location) ORDERING INFORMTION Device Package Shipping MUR0E xial ead** 00 Units/Bag MUR0EG xial ead** 00 Units/Bag MUR0ER xial ead** 5000/Tape & Reel MUR0ERG xial ead** 5000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. **This package is inherently Pb Free. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, C, 006 July, 006 Rev. 6 Publication Order Number: MUR0E/D
2 EECTRIC CHRCTERISTICS Maximum Instantaneous Forward Voltage (Note ) (I F =.0, T J = ) (I F =.0, T J = ) Maximum Instantaneous Reverse Current (Note ) (Rated dc Voltage, T J = 0 C) (Rated dc Voltage, T J = ) Maximum Reverse Recovery Time (I F =.0, di/dt = 50 / s) (I F = 0.5, I R =.0, I REC = 0.5 ) Maximum Forward Recovery Time (I F =.0, di/dt = 0 / s, I REC to.0 V) Characteristic Symbol Value Unit V F.75.0 i R 600 t rr 0 75 V ns t fr 75 ns Controlled valanche Energy (See Test Circuit in Figure 6) W V mj. Pulse Test: Pulse Width = 00 s, Duty Cycle.0%. I F, INSTNTNEOUS FORWRD CURRENT ().0 V 75 C 0 C V F, INSTNTNEOUS VOTGE (V) Figure. Maximum Forward Voltage I F, INSTNTNEOUS FORWRD CURRENT ().0 V 75 C 0 C V F, INSTNTNEOUS VOTGE (V) Figure. Typical Forward Voltage
3 .0E 0.0E 0 I R, REVERSE CURRENT ().0E 0 V 75 C.0E 0.0E 04 0 C.0E 05.0E 06.0E 07.0E I R, REVERSE CURRENT ().0E 0.0E 0 V 75 C.0E 04.0E 05 0 C.0E 06.0E 07.0E I F(V), VERGE FORWRD CURRENT () V R, REVERSE VOTGE (V) Figure. Maximum Reverse Current DC.5.0 SQURE WVE T, MBIENT TEMPERTURE ( C) Figure 5. Current Derating P F(V), VERGE POWER DISSIPTION () V R, REVERSE VOTGE (V) Figure 4. Typical Reverse Current 4 SQURE WVE DC I F(V), VERGE FORWRD CURRENT () Figure 6. Power Dissipation 0 C, CPCITNCE (pf) V R, REVERSE VOTGE (V) Figure 7. Typical Capacitance
4 NOTE. MBIENT MOUNTING DT Data shown for thermal resistance, junction to ambient (R J ) for the mountings shown is to be used as typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. TYPIC VUES FOR R J IN STI IR Mounting ead ength, Method /8 /4 / Units R J MOUNTING METHOD MOUNTING METHOD Vector Pin Mounting É É MOUNTING METHOD = /8 Board Ground Plane P.C. Board with / X / Copper Surface 4
5 PCKGE DIMENSIONS XI ED CSE 59 ISSUE U PORITY INDICTOR OPTION S NEEDED (SEE STYES) K F B D F K NOTES:. DIMENSIONING ND TOERNCING PER NSI Y4.5M, 98.. CONTROING DIMENSION: INCH.. RUES ND NOTES SSOCITED WITH JEDEC DO 4 OUTINE SH PPY 4. PORITY DENOTED BY CTHODE BND. 5. ED DIMETER NOT CONTROED WITHIN F DIMENSION. INCHES MIIMETERS DIM MIN MX MIN MX B D F K STYE : PIN. CTHODE (PORITY BND). NODE SWITCHMODE is a trademark of Semiconductor Components Industries, C. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERING INFORMTION ITERTURE FUFIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 807 US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order iterature: For additional information, please contact your local Sales Representative MUR0E/D
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Distributed by: www.jameco.com -8-8-22 The content and copyrights of the attached material are the property of its owner. BRBCT Preferred Device SWITCHODE Power Rectifier Surface ount Power Package The
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MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
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Ultrafast E Series with High Reverse Energy Capability
Ultrafast E Series with High Reverse Energy Capability... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:
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MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
MBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
MBR120VLSFT3G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS
MBR12VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD 123 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage,
1N6373-1N6381 Series (ICTE-5 - ICTE-36) 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors. Unidirectional*
N6373 - N638 Series (ICTE-5 - ICTE-36) 5 Watt Peak Power Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage,
MBRM120E. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS
Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward
MBRM120ET1G NRVBM120ET1G MBRM120ET3G NRVBM120ET3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM12ET1G, NRVBM12ET1G, MBRM12ET3G, NRVBM12ET3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
1N5908RL4G Watt Mosorb Zener Transient Voltage Suppressors. Unidirectional*
Preferred Device 5 Watt Mosorb Zener Transient oltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high-energy transients. They have
ULTRAFAST RECTIFIERS 8.0 AMPERES VOLTS
Preferred Devices... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: Ultrafast 25, 50 and 75 Nanosecond
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
SA5.0A Series 500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
5 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors Unidirectional The SA5.A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
Distributed by: www.jameco.com -8-83-4242 The content and copyrights of the attached material are the property of its owner. MUR5, MUR55, MUR5, MUR54, MUR56 Preferred Devices SWTCHMODE Power Rectifiers
EMI7204MU, EMI7206MU, EMI7208MU. Four-Six-Eight -Channel EMI Filter with Integrated ESD Protection
EMI7204MU, EMI7206MU, EMI7208MU Four-Six-Eight -Channel EMI Filter with Integrated ESD Protection The EMI720xMU Series is a family of C EMI filters with integrated ESD protection. Its typical component
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NL27WZ17. Dual Non-Inverting Schmitt Trigger Buffer
Dual Non-Inverting Schmitt Trigger Buffer The N7WZ7 is a high performance dual buffer operating from a to supply. At =, high impedance TT compatible inputs significantly reduce current loading to input
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
MBRS2040LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.
MBRS24LT3 Surface Mount Schottky Power Rectifier Power Surface Mount Package... employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MR2520L. Overvoltage Transient Suppressor OVERVOLTAGE TRANSIENT SUPPRESSOR VOLTS
MRL Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
MR2520LRL. Overvoltage Transient Suppressor OVERVOLTAGE TRANSIENT SUPPRESSOR VOLTS
Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress
1.5SMC6.8AT3 Series Watt Peak Power Zener Transient Voltage Suppressors. Unidirectional*
.SMC6.8AT3 Series 00 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
MR2535LRLG. Overvoltage Transient Suppressors. Medium Current
Overvoltage Transient Suppressors Medium Current Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed