MBRB30H60CT-1G, MBR30H60CTG, MBRF30H60CTG, MBRB30H60CTT4G, NRVBB30H60CTT4G, MBRJ30H60CTG. SWITCHMODE Power Rectifier 60 V, 30 A

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MBRB3H6CT-G, MBR3H6CTG, MBR3H6CTG, MBRB3H6CTTG, NRVBB3H6CTTG, MBRJ3H6CTG SWITCHMODE Power Rectifier 6 V, 3 eatures and Benefits ow orward Voltage ow Power oss/high Efficiency High Surge Capacity 75 C

1 MBRB3H6CT-G, MBR3H6CTG, MBR3H6CTG, MBRB3H6CTTG, NRVBB3H6CTTG, MBRJ3H6CTG SWITCHMODE Power Rectifier 6 V, 3 eatures and Benefits ow orward Voltage ow Power oss/high Efficiency High Surge Capacity 75 C Operating Junction Temperature 3 Total (5 Per Diode eg) Guard Ring for Stress Protection EC Q Qualified and PPP Capable NRVBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements These are Pb ree Devices* pplications Power Supply Output Rectification Power Management Instrumentation SCHOTTKY BRRIER RECTIIERS 3 MPERES, 6 VOTS I 2 PK (TO 262) CSE 8D PSTIC STYE 3 2, 2 3 CSE 22 PSTIC STYE 6 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets U 9 in Weight (pproximately):.5 Grams (I 2 PK) Weight (pproximately):.7 Grams (D 2 PK) Weight (pproximately):.9 Grams ( and P) inish: ll External Surfaces Corrosion Resistant and Terminal eads are Readily Solderable ead Temperature for Soldering Purposes: 26 C Max. for Seconds CSE 22D STYE 3 CSE 22H D 2 PK CSE 8B *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. ORDERING ND MRKING INORMTION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Semiconductor Components Industries, C, 22 January, 22 Rev. Publication Order Number: MBRB3H6CT/D

2 MXIMUM RTINGS (Per Diode eg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage verage Rectified orward Current (Rated V R ) T C = 59 C V RRM V RWM V R I (V) 5 6 V Peak Repetitive orward Current (Rated V R, Square Wave, 2 khz) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 6 Hz) I RM 3 I SM 26 Operating Junction Temperature (Note ) T J 55 to +75 C Storage Temperature T stg 55 to +75 C Voltage Rate of Change (Rated V R ) dv/dt, V/ s Controlled valanche Energy (see test conditions in igures and 2) W V 35 mj ESD Ratings: Machine Model = C Human Body Model = 3B > > 8 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < /R J. THERM CHRCTERISTICS Characteristic Symbol Value Unit V Maximum Thermal Resistance (MBRB3H6CT G and MBR3H6CTG) Junction to Case Junction to mbient (MBR3H6CTG and MBRJ3H6CTG) Junction to Case (MBRB3H6CTTG and NRVBB3H6CTTG) Junction to Case R JC R J R JC R JC C/W EECTRIC CHRCTERISTICS (Per Diode eg) Characteristic Symbol Value Unit Maximum Instantaneous orward Voltage (Note 2) (I = 5, T C = 25 C) (I = 5, T C = 25 C) (I = 3, T C = 25 C) (I = 3, T C = 25 C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, T C = 25 C) (Rated DC Voltage, T C = 25 C) 2. Pulse Test: Pulse Width = 3 s, Duty Cycle 2.%. v i R.3 5 V m 2

3 I, INSTNTNEOUS ORWRD CURRENT () T J = 25 C T J = 25 C V, INSTNTNEOUS ORWRD VOTGE (V).2 I, INSTNTNEOUS ORWRD CURRENT () T J = 25 C T J = 25 C V, INSTNTNEOUS ORWRD VOTGE (V) igure. Typical orward Voltage igure 2. Maximum orward Voltage I R, REVERSE CURRENT ().E.E 2.E 3.E.E 5.E 6 2 T J = 25 C T J = 25 C I R, MXIMUM REVERSE CURRENT ().E.E 2.E 3.E.E 5 T J = 25 C T J = 25 C.E V R, REVERSE VOTGE (V) V R, REVERSE VOTGE (V) igure 3. Typical Reverse Current igure. Maximum Reverse Current I, VERGE ORWRD CURRENT () SQURE WVE 2 dc P O, VERGE POWER DISSIPTION (W) SQURE 5 DC 2 25 T C, CSE TEMPERTURE ( C) I O, VERGE ORWRD CURRENT (MPS) igure 5. Current Derating for MBRB3H6CT G, MBR3H6CTG, MBRB3H6CTTG and NRVBB3H6CTTG igure 6. orward Power Dissipation 3

4 I, VERGE ORWRD CURRENT () 3, dc 25 2 SQURE WVE C, CPCITNCE (p) 2 3 T J = 25 C 5 6 T C, CSE TEMPERTURE ( C) V R, REVERSE VOTGE (V) igure 8. Current Derating for MBR3H6CTG and MBRJ3H6CTG igure 7. Capacitance R(t), TRNSIENT THERM RESISTNCE. D = SINGE PUSE t, TIME (sec) igure 9. Thermal Response Junction to Case for MBRB3H6CT G, MBR3H6CTG, MBRB3H6CTTG and NVRBB3H6CTTG P (pk) t t 2 DUTY CYCE, D = t /t 2 R(t), TRNSIENT THERM RESISTNCE.. D = SINGE PUSE..... t, TIME (sec) igure. Thermal Response Junction to Case for MBR3H6CTG and MBRJ3H6CTG P (pk) t t 2 DUTY CYCE, D = t /t 2

5 +V DD I mh COI V D BV DUT MERCURY SWITCH S I D DUT I I D V DD t t t 2 t igure. Test Circuit The unclamped inductive switching circuit shown in igure was used to demonstrate the controlled avalanche capability of this device. mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S is closed at t the current in the inductor I ramps up linearly; and energy is stored in the coil. t t the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV DUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2. By solving the loop equation at the point in time when S is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the V DD power supply while the diode is in breakdown (from t to t 2 ) minus any losses due to finite component resistances. ssuming the component resistive igure 2. Current Voltage Waveforms elements are small Equation () approximates the total energy transferred to the diode. It can be seen from this equation that if the V DD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S was closed, Equation (2). EQUTION (): W V 2 I 2 PK BV DUT BV DUT V DD EQUTION (2): W V 2 I 2 PK 5

6 MRKING DIGRMS YWW B3H6G K YWW B3H6G K YWW B3H6G K YWW B3H6G K I 2 PK (TO 262) P D 2 PK B3H6 Y WW G K = Device Code = ssembly ocation = Year = Work Week = Pb ree Package = Polarity Designator ORDERING INORMTION MBRB3H6CT G Device Package Shipping TO 262 (Pb ree) 5 Units / Rail MBR3H6CTG MBR3H6CTG MBRB3H6CTTG NRVBB3H6CTTG (Pb ree) P (Pb ree) D 2 PK (Pb ree) D 2 PK (Pb ree) 5 Units / Rail 5 Units / Rail 8 / Tape & Reel 8 / Tape & Reel MBRJ3H6CTG P (Pb ree, Halogen ree) 5 Units / Rail or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. 6

7 PCKGE DIMENSIONS I 2 PK (TO 262) CSE 8D ISSUE D C B E V NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH. T SETING PNE W 2 3 S K INCHES MIIMETERS DIM MIN MX MIN MX B C D E RE 3. RE G. BSC 2.5 BSC H J K S.39 RE 9.9 RE V W G D 3 P.3 (.5) M T B M J H STYE 3: PIN. NODE 2. CTHODE 3. NODE. CTHODE CSE 22 9 ISSUE G H Q Z V G B 2 3 N D K T U S R J C T SETING PNE NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH. 3. DIMENSION Z DEINES ZONE WHERE BODY ND ED IRREGURITIES RE OWED. INCHES MIIMETERS DIM MIN MX MIN MX B C D G H J K N Q R S T U V Z STYE 6: PIN. NODE 2. CTHODE 3. NODE. CTHODE 7

8 PCKGE DIMENSIONS T SETING PNE B 2 3 G S D 3 P.3 (.5) M T B M K C H D 2 PK 3 CSE 8B ISSUE K E V W J W NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH. 3. 8B THRU 8B 3 OBSOETE, NEW STNDRD 8B. INCHES MIIMETERS DIM MIN MX MIN MX B C D E G. BSC 2.5 BSC H J K M N.97 RE 5. RE P.79 RE 2. RE R.39 RE.99 RE S V VRIBE CONIGURTION ZONE R N U P M M M VIEW W W VIEW W W VIEW W W 2 3 SODERING OOTPRINT* X 3.5 2X PITCH DIMENSIONS: MIIMETERS *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SODERRM/D. 8

9 PCKGE DIMENSIONS UPK CSE 22D 3 ISSUE K K Q H B 2 3 G N D 3 P Y U C T S J R SETING PNE NOTES:. DIMENSIONING ND TOERNCING PER NSI Y.5M, CONTROING DIMENSION: INCH 3. 22D- THRU 22D-2 OBSOETE, NEW STNDRD 22D-3. INCHES MIIMETERS DIM MIN MX MIN MX B C D G. BSC 2.5 BSC H J K N.2 BSC 5.8 BSC Q R S U (.) M B M Y STYE 3: PIN. NODE 2. CTHODE 3. NODE UPCK, 3 ED CSE 22H ISSUE B E/2 Q 3X b2 e E 2 3 P. M B M D C 3X b.25 M B M C H c B NOTE 3 2 SETING PNE NOTES:. DIMENSIONING ND TOERNCING PER SME Y.5M, CONTROING DIMENSION: MIIMETERS. 3. CONTOUR UNCONTROED IN THIS RE.. DIMENSIONS D ND E DO NOT INCUDE MOD SH ND GTE PROTRUSIONS. MOD SH ND GTE PROTRUSIONS NOT TO EXCEED.3 PER SIDE. THESE DIMENSIONS RE TO BE MESURED T OUTERMOST EXTREME O THE PSTIC BODY. 5. DIMENSION b2 DOES NOT INCUDE DMBR PROTRUSION. ED WIDTH INCUDING PROTRUSION SH NOT EXCEED 2.. MIIMETERS DIM MIN MX b.5.8 b2.. c.9.79 D E e 2.5 BSC H P Q

10 UPK is a trademark of Semiconductor Components Industries, C. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, C (SCIC). SCIC reserves the right to make changes without further notice to any products herein. SCIC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCIC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCIC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCIC does not convey any license under its patent rights nor the rights of others. SCIC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCIC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCIC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCIC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCIC was negligent regarding the design or manufacture of the part. SCIC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBICTION ORDERING INORMTION ITERTURE UIMENT: iterature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 827 US Phone: or Toll ree US/Canada ax: or Toll ree US/Canada orderlit@onsemi.com N. merican Technical Support: Toll ree US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer ocus Center Phone: ON Semiconductor Website: Order iterature: or additional information, please contact your local Sales Representative MBRB3H6CT/D

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G. SWITCHMODE Power Rectifier 100 V, 20 A SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS

MBR20H100CTG, MBRB20H100CTG, MBRF20H100CTG, NRVBB20H100CTT4G. SWITCHMODE Power Rectifier 100 V, 20 A SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS MBR2HCTG, MBRB2HCTG, MBR2HCTG, NRVBB2HCTTG SWITCHMODE Power Rectifier V, 2 eatures and Benefits ow orward Voltage:.6 V @ 25 C ow Power oss/high Efficiency High Surge Capacity 75 C Operating Junction Temperature