BRHCT, BRBHCT, BRBHCT AXIU RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking V

Size: px

Start display at page:

Download "BRHCT, BRBHCT, BRBHCT AXIU RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking V"

Douglas Copeland
5 years ago
Views:

1 BRHCT, BRBHCT, BRBHCT- SWITCHODE Power Rectifier V, A eatures and Benefits Low orward Voltage: C Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total (2 A Per Diode Leg) Guard Ring for Stress Protection Pb ree Packages are Available Applications Power Supply Output Rectification Power anagement Instrumentation D 2 PAK AYWW CASE 8B BHG echanical Characteristics: STYLE AKA Case: Epoxy, olded Epoxy eets UL 9 in Weight (Approximately):.9 Grams (TO 22AB).7 Grams (D 2 PAK).5 Grams (TO 262) inish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 26 C ax. for Seconds AXIU RATINGS Please See the Table on the ollowing Page 2 2 A Y WW G AKA TO 22AB CASE 22A PLASTIC STYLE 6 I 2 PAK (TO 262) CASE 8D PLASTIC STYLE 2, ARKING DIAGRAS AYWW BHG AKA AYWW BHG AKA = Assembly Location = Year = Work Week = Pb ree Package = Polarity Designator ORDERING INORATION Device Package Shipping BRHCT TO 22 5 Units/Rail BRHCTG TO 22 5 Units/Rail (Pb ree) BRBHCT G TO 262 (Pb ree) 5 Units/Rail BRBHCTTG D 2 PAK (Pb ree) 8/Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. m/on/ Semiconductor Components Industries, LLC, 28 Publication Order Number: June, 28 Rev. 6 BRHCT/D

2 BRHCT, BRBHCT, BRBHCT AXIU RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified orward Current (Rated V R ) T C = 5 C Peak Repetitive orward Current (Rated V R, Square Wave, 2 khz) T C = 5 C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 6 Hz) V RR V RW V R V I (AV) 2 A I R A I S 5 A Operating Junction Temperature (Note ) T J +75 C Storage Temperature T stg 65 to +75 C Voltage Rate of Change (Rated V R ) dv/dt, V/ s Controlled Avalanche Energy (see test conditions in igures and ) W AVAL mj ESD Ratings: achine odel = C Human Body odel = B THERAL CHARACTERISTICS (PER DIODE LEG) aximum Thermal Resistance Junction to Case Junction to Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) > > 8 R JC 2. R JA 7 V C/W v V ma aximum Instantaneous orward Voltage (Note 2) (I = 2 A, T C = 25 C) (I = 2 A, T C = 25 C) (I = A, T C = 25 C) (I = A, T C = 25 C) aximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, T C = 25 C) (Rated DC Voltage, T C = 25 C) i R. Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. The heat generated must be less than the thermal conductivity from Junction to Ambient: dp D /dt J < /R JA. 2. Pulse Test: Pulse Width = s, Duty Cycle 2.%. m/on/ 2

3 BRHCT, BRBHCT, BRBHCT I, INSTANTANEOUS ORWARD CURRENT (APS) T J = 5 C V, INSTANTANEOUS ORWARD VOLTAGE (VOLTS) I, INSTANTANEOUS ORWARD CURRENT (APS) T J = 5 C V, INSTANTANEOUS ORWARD VOLTAGE (VOLTS) igure. Typical orward Voltage igure 2. aximum orward Voltage I R, REVERSE CURRENT (APS).E.E 2.E.E.E 5.E 6.E 7.E 8 2 I R, AXIU REVERSE CURRENT (APS).E T J = 5 C.E 2.E.E.E 5.E 6.E 7.E T J = 5 C V R, REVERSE VOLTAGE (VOLTS) V R, REVERSE VOLTAGE (VOLTS) igure. Typical Reverse Current igure. aximum Reverse Current I, AVERAGE ORWARD CURRENT (APS) SQUARE WAVE dc P O, AVERAGE POWER DISSIPATION (WATTS) SQUARE DC T C, CASE TEPERATURE ( C) I O, AVERAGE ORWARD CURRENT (APS) igure 5. Current Derating igure 6. orward Power Dissipation m/on/

4 BRHCT, BRBHCT, BRBHCT C, CAPACITANCE (p) V R, REVERSE VOLTAGE (VOLTS) igure 7. Capacitance R(t), TRANSIENT THERAL RESISTANCE.. D = P (pk) t t SINGLE PULSE 2 DUTY CYCLE, D = t /t t, TIE (sec) igure 8. Thermal Response Junction to Ambient R(t), TRANSIENT THERAL RESISTANCE.... D = SINGLE PULSE. P (pk) t t 2 DUTY CYCLE, D = t /t t, TIE (sec) igure 9. Thermal Response Junction to Case m/on/

5 BRHCT, BRBHCT, BRBHCT +V DD I L mh COIL V D BV DUT ERCURY SWITCH S I D DUT I L I D V DD t t t 2 t igure. Test Circuit igure. Current Voltage Waveforms The unclamped inductive switching circuit shown in igure was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S is closed at t the current in the inductor I L ramps up linearly; and energy is stored in the coil. At t the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BV DUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2. By solving the loop equation at the point in time when S is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the V DD power supply while the diode is in breakdown (from t to t 2 ) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation () approximates the total energy transferred to the diode. It can be seen from this equation that if the V DD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S was closed, Equation (2). EQUATION (): W AVAL 2 LPK LI 2 BV DUT BV V DUT DD EQUATION (2): W AVAL 2 LI 2 LPK m/on/ 5

6 BRHCT, BRBHCT, BRBHCT PACKAGE DIENSIONS TO 22 CASE 22A 9 ISSUE A H Q Z L V G B 2 N D A K T U R J S C T SEATING PLANE NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y.5, CONTROLLING DIENSION: INCH.. DIENSION Z DEINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES ILLIETERS DI IN AX IN AX A B C D G H J K L N Q R S T U V Z STYLE 6: PIN. ANODE 2. CATHODE. ANODE. CATHODE m/on/ 6

7 BRHCT, BRBHCT, BRBHCT PACKAGE DIENSIONS D 2 PAK CASE 8B ISSUE J T SEATING PLANE B G 2 S D PL. (.5) T B K C H E V W A W J NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y.5, CONTROLLING DIENSION: INCH.. 8B THRU 8B OBSOLETE, NEW STANDARD 8B. INCHES ILLIETERS DI IN AX IN AX A B C D E G. BSC 2.5 BSC H J K L N.97 RE 5. RE P.79 RE 2. RE R.9 RE.99 RE S V VARIABLE CONIGURATION ZONE R N U P STYLE : PIN. ANODE 2. CATHODE. ANODE. CATHODE L L L VIEW W W VIEW W W VIEW W W 2 SOLDERING OOTPRINT* SCALE : mm inches *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. m/on/ 7

8 BRHCT, BRBHCT, BRBHCT PACKAGE DIENSIONS I 2 PAK (TO 262) CASE 8D ISSUE D C B E V NOTES:. DIENSIONING AND TOLERANCING PER ANSI Y.5, CONTROLLING DIENSION: INCH. T SEATING PLANE W 2 K S A INCHES ILLIETERS DI IN AX IN AX A B C D E RE. RE G. BSC 2.5 BSC H J K S.9 RE 9.9 RE V W G J D PL. (.5) T B H SWITCHODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INORATION LITERATURE ULILLENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 USA Phone: or 8 86 Toll ree USA/Canada ax: or Toll ree USA/Canada orderlit@onsemi.com N. American Technical Support: Toll ree USA/Canada Europe, iddle East and Africa Technical Support: Phone: Japan Customer ocus Center Phone: ON Semiconductor Website: Order Literature: or additional information, please contact your local Sales Representative m/on/ BRHCT/D 8

MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS

MBR60H100CTG. SWITCHMODE Power Rectifier 100 V, 60 A SCHOTTKY BARRIER RECTIFIER 60 AMPERES 100 VOLTS SWITCHMODE Power Rectifier 1 V, 6 A Features and Benefits Low Forward Voltage:.72 V @ 125 C Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature 6 A Total (3 A Per Diode