MBR41H100CT, NRVBB41H100CT Series. SWITCHMODE Power Rectifier 100 V, 40 A

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BRHCT, NRBBHCT Series SWITCHODE Power Rectifier, eatures and Benefits Low orward oltage:.

1 BRHCT, NRBBHCT Series SWITCHODE Power Rectifier, eatures and Benefits Low orward 25 C Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature Total (2 Per Diode Leg) Guard Ring for Stress Protection NRBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable These Devices are Pb ree, Halogen ree/br ree and are RoHS Compliant* BRHCTH and BRBHCT H are Halide ree 2 TO 22B CSE 22 STYLE 6 2, RKING DIGRS YWW BHx K pplications Power Supply Output Rectification Power anagement Instrumentation D 2 PK CSE 8B STYLE YWW BHG K echanical Characteristics: Case: Epoxy, olded Epoxy eets UL in Weight (pproximately):.9 Grams (TO 22B).7 Grams (D 2 PK).5 Grams (TO 262) inish: ll External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 26 C ax. for Seconds 2 I 2 PK (TO 262) CSE 8D STYLE = ssembly Location Y = Year WW = Work Week x = G or H G = Pb ree Package H = Halide ree Package K = Polarity Designator YWW BHx K ORDERING INORTION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. Semiconductor Components Industries, LLC, 2 ay, 2 Rev. 8 Publication Order Number: BRHCT/D

2 BRHCT, NRBBHCT Series XIU RTINGS (Per Diode Leg) Rating Symbol alue Unit Peak Repetitive Reverse oltage Working Peak Reverse oltage DC Blocking oltage verage Rectified orward Current (Rated R ) T C = 5 C RR RW R I () 2 Peak Repetitive orward Current (Rated R, Square Wave, 2 khz) T C = 5 C Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 6 Hz) I R I S 5 Operating Junction Temperature (Note ) T J +75 C Storage Temperature T stg 65 to +75 C oltage Rate of Change (Rated R ) dv/dt, / s Controlled valanche Energy (see test conditions in igures and ) W L mj ESD Ratings: achine odel = C Human Body odel = B > > 8 Stresses exceeding aximum Ratings may damage the device. aximum Ratings are stress ratings only. unctional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERL CHRCTERISTICS (Per Diode Leg) Characteristic Symbol alue Unit aximum Thermal Resistance Junction to Case Junction to mbient R JC 2. R J 7 C/W ELECTRICL CHRCTERISTICS (Per Diode Leg) Characteristic Symbol alue Unit aximum Instantaneous orward oltage (Note 2) (I = 2, T C = 25 C) (I = 2, T C = 25 C) (I =, T C = 25 C) (I =, T C = 25 C) aximum Instantaneous Reverse Current (Note 2) (Rated DC oltage, T C = 25 C) (Rated DC oltage, T C = 25 C) v i R.. The heat generated must be less than the thermal conductivity from Junction to mbient: dp D /dt J < /R J. 2. Pulse Test: Pulse Width = s, Duty Cycle 2.%. m 2

3 BRHCT, NRBBHCT Series I, INSTNTNEOUS ORWRD CURRENT (PS) T J = 5 C , INSTNTNEOUS ORWRD OLTGE (OLTS) I, INSTNTNEOUS ORWRD CURRENT (PS) T J = 5 C , INSTNTNEOUS ORWRD OLTGE (OLTS) igure. Typical orward oltage igure 2. aximum orward oltage I R, REERSE CURRENT (PS).E.E 2.E.E.E 5.E 6.E 7.E 8 2 T J = 5 C R, REERSE OLTGE (OLTS) I R, XIU REERSE CURRENT (PS).E.E 2.E.E.E 5.E 6.E 7.E T J = 5 C R, REERSE OLTGE (OLTS) igure. Typical Reverse Current igure. aximum Reverse Current I, ERGE ORWRD CURRENT (PS) SQURE WE dc P O, ERGE POWER DISSIPTION (WTTS) SQURE DC T C, CSE TEPERTURE ( C) I O, ERGE ORWRD CURRENT (PS) igure 5. Current Derating igure 6. orward Power Dissipation

4 BRHCT, NRBBHCT Series C, CPCITNCE (p) R, REERSE OLTGE (OLTS) igure 7. Capacitance R(t), TRNSIENT THERL RESISTNCE.. D = SINGLE PULSE. P (pk) t t 2 DUTY CYCLE, D = t /t t, TIE (sec) igure 8. Thermal Response Junction to mbient R(t), TRNSIENT THERL RESISTNCE.... D = SINGLE PULSE. P (pk) t t 2 DUTY CYCLE, D = t /t t, TIE (sec) igure 9. Thermal Response Junction to Case

5 BRHCT, NRBBHCT Series + DD I L mh COIL D B DUT ERCURY SWITCH S I D DUT I L I D DD t t t 2 t igure. Test Circuit The unclamped inductive switching circuit shown in igure was used to demonstrate the controlled avalanche capability of this device. mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S is closed at t the current in the inductor I L ramps up linearly; and energy is stored in the coil. t t the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at B DUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t 2. By solving the loop equation at the point in time when S is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the DD power supply while the diode is in breakdown (from t to t 2 ) minus any losses due to finite component resistances. ssuming the component resistive igure. Current oltage Waveforms elements are small Equation () approximates the total energy transferred to the diode. It can be seen from this equation that if the DD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S was closed, Equation (2). EQUTION (): W L 2 LI 2 LPK B DUT B DUT DD EQUTION (2): W L 2 LI 2 LPK 5

6 BRHCT, NRBBHCT Series ORDERING INORTION Device Package Shipping BRHCTG BRHCTH BRBHCT G BRBHCT H (In Development) BRBHCTTG TO 22B (Pb ree) TO 22B (Halide ree) I 2 PK (Pb ree) I 2 PK (Halide ree) D 2 PK (Pb ree) 5 Units / Rail 5 Units / Rail 5 Units / Rail 5 Units / Rail 8 Units / Tape & Reel NRBBHCTTG* D 2 PK (Pb ree) 8 Units / Tape & Reel or information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8/D. *NRBB Prefix for utomotive and Other pplications Requiring Unique Site and Control Change Requirements; EC Q Qualified and PPP Capable. 6

7 BRHCT, NRBBHCT Series PCKGE DIENSIONS TO 22 CSE 22 9 ISSUE G H Q Z L G B 2 N D K T U S R J C T SETING PLNE NOTES:. DIENSIONING ND TOLERNCING PER NSI Y.5, CONTROLLING DIENSION: INCH.. DIENSION Z DEINES ZONE WHERE LL BODY ND LED IRREGULRITIES RE LLOWED. INCHES ILLIETERS DI IN X IN X B C D G H J K L N Q R S T U Z STYLE 6: PIN. NODE 2. CTHODE. NODE. CTHODE 7

8 BRHCT, NRBBHCT Series PCKGE DIENSIONS D 2 PK CSE 8B ISSUE K T SETING PLNE B G 2 S D PL. (.5) T B K C H E W W J NOTES:. DIENSIONING ND TOLERNCING PER NSI Y.5, CONTROLLING DIENSION: INCH.. 8B THRU 8B OBSOLETE, NEW STNDRD 8B. INCHES ILLIETERS DI IN X IN X B C D E G. BSC 2.5 BSC H J K L N.97 RE 5. RE P.79 RE 2. RE R.9 RE.99 RE S RIBLE CONIGURTION ZONE R N U P STYLE : PIN. NODE 2. CTHODE. NODE. CTHODE L L L IEW W W IEW W W IEW W W 2 SOLDERING OOTPRINT* X.5 2X PITCH DIENSIONS: ILLIETERS *or additional information on our Pb ree strategy and soldering details, please download the ON Semiconductor Soldering and ounting Techniques Reference anual, SOLDERR/D. 8

9 BRHCT, NRBBHCT Series PCKGE DIENSIONS I 2 PK (TO 262) CSE 8D ISSUE D C B E NOTES:. DIENSIONING ND TOLERNCING PER NSI Y.5, CONTROLLING DIENSION: INCH. T SETING PLNE W 2 K S INCHES ILLIETERS DI IN X IN X B C D E RE. RE G. BSC 2.5 BSC H J K S.9 RE 9.9 RE W G D PL. (.5) T B J H STYLE : PIN. NODE 2. CTHODE. NODE. CTHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERING INORTION LITERTURE ULILLENT: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 827 US Phone: or 8 86 Toll ree US/Canada ax: or Toll ree US/Canada orderlit@onsemi.com N. merican Technical Support: Toll ree US/Canada Europe, iddle East and frica Technical Support: Phone: Japan Customer ocus Center Phone: ON Semiconductor Website: Order Literature: or additional information, please contact your local Sales Representative BRHCT/D

BRHCT, BRBHCT, BRBHCT AXIU RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking V

BRHCT, BRBHCT, BRBHCT AXIU RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking V BRHCT, BRBHCT, BRBHCT- SWITCHODE Power Rectifier V, A eatures and Benefits Low orward Voltage:.67 V @ 25 C Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total