2N6027, 2N6028. Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers. PUTs 40 VOLTS 300 mw
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1 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as R BB, η, I V, and I P by merely selecting two resistor values. pplication includes thyristor trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO 92 plastic package for high volume requirements, this package is readily adaptable for use in automatic insertion equipment. Programmable R BB, η, I V and I P Low On State Voltage 1.5 Volts I F = 50 m Low ate to node Leakage Current n Maximum High Peak Output Voltage 11 Volts Typical Low Offset Voltage 0.35 Volt Typical (R = k ohms) Device Marking: Logo, Device Type, e.g., 2N6027, Date Code PUTs 40 VOLTS 300 mw MXIMUM RTINS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit *Power Dissipation Derate bove 25 C *DC Forward node Current Derate bove 25 C P F 300 1/θ J 4.0 I T mw mw/ C m m/ C *DC ate Current I 50 m Repetitive Peak Forward Current 0 µs Pulse Width, 1% Duty Cycle *20 µs Pulse Width, 1% Duty Cycle Non Repetitive Peak Forward Current µs Pulse Width I TRM mps I TSM mps *ate to Cathode Forward Voltage V F 40 Volts *ate to Cathode Reverse Voltage V R Volts *ate to node Reverse Voltage V R 40 Volts *node to Cathode Voltage (Note 1) V ±40 Volts Capacitive Discharge Energy (Note 2) E 250 J TO 92 (TO 226) CSE 029 STYLE 16 PIN SSINMENT node ate Cathode ORDERIN INFORMTION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Power Dissipation (Note 3) P D 300 mw Operating Temperature T OPR 50 to +0 C Junction Temperature T J 50 to +125 C Storage Temperature Range T stg 55 to +150 C *Indicates JEDEC Registered Data 1. node positive, R = 00 ohms node negative, R = open 2. E = CV 2 capacitor discharge energy limiting resistor and repetition. 3. Derate current and power above 25 C. Semiconductor Components Industries, LLC, 2004 March, 2004 Rev. 3 1 Publication Order Number: 2N6027/D
2 THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θjc 75 C/W Thermal Resistance, Junction to mbient R θj 200 C/W Maximum Lead Temperature for Soldering Purposes ( 1/16 from case, secs max) T L 260 C ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted.) Characteristic Fig. No. Symbol Min Typ Max Unit *Peak Current (V S = Vdc, R = 1 MΩ) 2N6027 (V S = Vdc, R = k ohms) 2N6027 2,9,11 I P µ *Offset Voltage (V S = Vdc, R = 1 MΩ) 2N6027 (V S = Vdc, R = k ohms) (Both Types) 1 V T Volts *Valley Current (V S = Vdc, R = 1 MΩ) 2N6027 (V S = Vdc, R = k ohms) 2N6027 (V S = Vdc, R = 200 ohms) 2N6027 1,4,5 I V µ m *ate to node Leakage Current (V S = 40 Vdc, T = 25 C, Cathode Open) (V S = 40 Vdc, T = 75 C, Cathode Open) ate to Cathode Leakage Current (V S = 40 Vdc, node to Cathode Shorted) I O 3.0 ndc I S 50 ndc *Forward Voltage (I F = 50 m Peak) (1) 1,6 V F Volts *Peak Output Voltage (V = 20 Vdc, C C = µf) Pulse Voltage Rise Time (V B = 20 Vdc, C C = µf) *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width 300 µsec, Duty Cycle 2%. 3,7 V o Volt 3 t r ns 2
3 V I +V B 1 Programmable Unijunction with Program" Resistors R1 and R2 I R2 R1 V S = R1 + R2 V B + R1 V R = R 1B Equivalent Test Circuit for Figure 1 used for electrical characteristics testing (also see Figure 2) R1 R2 R1 + R2 V S Figure 1. Electrical Characterization I O V V S V F V V I P V P V T = V P V S I V I F IC Electrical Characteristics I djust for Turn on Threshold 0k % I P (SENSE) 0 µv = n + 2N5270 V B 0.01 µf Scope 20 Put Under Test R R = R/2 V S = V B/2 (See Figure 1) R C C 5k +V B +V v o 20 Ω 16k 27k V o 6 V 0.6 V t f t Figure 2. Peak Current (I P ) Test Circuit Figure 3. V o and t r Test Circuit 3
4 TYPICL VLLEY CURRENT BEHVIOR I V, VLLEY CURRENT ( µ ) 0 R = kω 0 kω 1 MΩ I V, VLLEY CURRENT ( µ ) 0 R = kω 0 kω 1 MΩ V S, SUPPLY VOLTE (VOLTS) Figure 4. Effect of Supply Voltage T, MBIENT TEMPERTURE ( C) Figure 5. Effect of Temperature V F, PE FORWRD VOLTE (VOLTS) T = 25 C V, PE OUTPUT VOLTE (VOLTS) o T = 25 C (SEE FIURE 3) C C = µf 00 pf I F, PE FORWRD CURRENT (MP) Figure 6. Forward Voltage V S, SUPPLY VOLTE (VOLTS) Figure 7. Peak Output Voltage Circuit Symbol E P N P N B2 R 2 η = R 1 B1 Equivalent Circuit with External Program" Resistors R1 and R2 R BB = R1 + R2 R1 R1 + R2 C C R T R 2 R 1 Typical pplication + Figure 8. Programmable Unijunction 4
5 TYPICL PE CURRENT BEHVIOR 2N6027 I P, PE CURRENT ( µ ) R = kω 0 kω MΩ T = 25 C (SEE FIURE 2) I P, PE CURRENT ( µ ) R = kω 0 kω V S = VOLTS (SEE FIURE 2) MΩ V S, SUPPLY VOLTE (VOLTS) Figure 9. Effect of Supply Voltage and R T, MBIENT TEMPERTURE ( C) Figure. Effect of Temperature and R I P, PE CURRENT ( µ ) R = kω 0 kω MΩ T = 25 C (SEE FIURE 2) I P, PE CURRENT ( µ ) 0.05 R = kω 0 kω V S = VOLTS (SEE FIURE 2) 0.02 MΩ V S, SUPPLY VOLTE (VOLTS) Figure 11. Effect of Supply Voltage and R T, MBIENT TEMPERTURE ( C) Figure 12. Effect of Temperature and R 5
6 TO 92 EI RDIL TPE IN FN FOLD BOX OR ON REEL H2 H2 H2B H2B H W2 H4 H5 L L1 H1 W1 W T1 T F1 F2 T2 P2 P2 P1 P Figure 13. Device Positioning on Tape D Specification Inches Millimeter Symbol Item Min Max Min Max D Tape Feedhole Diameter D2 Component Lead Thickness Dimension F1, F2 Component Lead Pitch H Bottom of Component to Seating Plane H1 Feedhole Location H2 Deflection Left or Right H2B Deflection Front or Rear H4 Feedhole to Bottom of Component H5 Feedhole to Seating Plane L Defective Unit Clipped Dimension L1 Lead Wire Enclosure P Feedhole Pitch P1 Feedhole Center to Center Lead P2 First Lead Spacing Dimension T dhesive Tape Thickness T1 Overall Taped Package Thickness T2 Carrier Strip Thickness W Carrier Strip Width W1 dhesive Tape Width W2 dhesive Tape Position NOTES: 1. Maximum alignment deviation between leads not to be greater than mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. 6
7 ORDERIN & SHIPPIN INFORMTION: 2N6027 and packaging options, Device Suffix U.S. 2N6027, 2N6027, RLR RLRM RLRP Europe Equivalent Shipping Description of TO92 Tape Orientation 2N6027RL1 Bulk in Box (5/Box) Radial Tape and Reel (2/Reel) Radial Tape and Reel (2/Reel) Radial Tape and Fan Fold Box (2/Box) Radial Tape and Fan Fold Box (2/Box) N/, Bulk Round side of TO92 and adhesive tape visible Flat side of TO92 and adhesive tape visible Flat side of TO92 and adhesive tape visible Round side of TO92 and adhesive tape visible PCE DIMENSIONS TO 92 (TO 226) CSE ISSUE L SETIN PLNE R X X H V 1 N P N B L C D J SECTION X X NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y14.5M, CONTROLLIN DIMENSION: INCH. 3. CONTOUR OF PCE BEYOND DIMENSION R IS UNCONTROLLED. 4. LED DIMENSION IS UNCONTROLLED IN P ND BEYOND DIMENSION MINIMUM. INCHES MILLIMETERS DIM MIN MX MIN MX B C D H J L N P R V STYLE 16: PIN 1. NODE 2. TE 3. CTHODE 7
8 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORDERIN INFORMTION LITERTURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Japan: ON Semiconductor, Japan Customer Focus Center amimeguro, Meguro ku, Tokyo, Japan Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative. 2N6027/D
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