SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY
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1 Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance values. The LS22 has an internal timing resistor that allows the circuits to be used with only an external capacitor. Once triggered, the basic pulse width may be extended by retriggering the gated low-level-active (A) or high-level-active (B) inputs, or be reduced by use of the overriding clear. Overriding Clear Terminates Output Pulse Compensated for and Temperature Variations DC Triggered from Active-High or Active-Low Gated Logic Inputs Retriggerable for Very Long Output Pulses, up to 00% Duty Cycle Internal Timing Resistors on LS22 GUARANTEED OPERATING RANGES Symbol Parameter Min Typ Max Unit Supply Voltage V T A Operating Ambient Temperature Range C I OH Output Current High 0.4 ma I OL Output Current Low 8.0 ma External Timing Resistance k External Capacitance No Restriction / Wiring Capacitance at / Terminal 50 pf 4 6 LOW POWER SCHOTTY PLASTIC N SUFFIX CASE 646 SOIC D SUFFIX CASE 75A PLASTIC N SUFFIX CASE 648 SOIC D SUFFIX CASE 75B SOEIAJ M SUFFIX CASE 966 ORDERING INFORMATION Device Package Shipping SN74LS22N 4 Pin DIP 2000 Units/Box SN74LS22D SOIC 4 55 Units/Rail SN74LS22DR2 SOIC /Tape & Reel SN74LS23N 6 Pin DIP 2000 Units/Box SN74LS23D SOIC 6 38 Units/Rail SN74LS23DR2 SOIC /Tape & Reel SN74LS23M SOEIAJ 6 See Note SN74LS23MEL SOEIAJ 6 See Note. For ordering information on the EIAJ version of the SOIC package, please contact your local ON Semiconductor representative. Semiconductor Components Industries, LLC, 2006 June, 2006 Rev. 8 Publication Order Number: SN74LS22/D
2 SN74LS23 (TOP VIEW) (SEE NOTES THRU 4) / 2 2 CLR 2B 2A CLR CLR A B CLR / 8 GND SN74LS22 (TOP VIEW) (SEE NOTES THRU 4) / NC NC R int R int CLR A A2 B B2 CLR GND NC NO INTERNAL CONNECTION. NOTES:. An external timing capacitor may be connected between and / (positive). 2. To use the internal timing resistor of the LS22, connect R int to. 3. For improved pulse width accuracy connect an external resistor between / and with R int open-circuited. 4. To obtain variable pulse widths, connect an external variable resistance between R int / and. 2
3 LS22 FUNCTIONAL TABLE INPUTS OUTPUTS LS23 FUNCTIONAL TABLE INPUTS OUTPUTS CLEAR A A2 B B2 L X X X X L H X H H X X L H X X X L X L H X X X X L L H H L X H H L X H H X L H H X L H H H H H H H H H H H H L X H H X L H H CLEAR A B L X X L H X H X L H X X L L H H L H H L H TYPICAL APPLICATION DATA The output pulse t W is a function of the external components, and or and R int on the LS22. For values of 000 pf, the output pulse at = 5.0 V and V RC = 5.0 V (see Figures, 2, and 3) is given by t W = where is nominally 0.45 If is on pf and is in kω then t W is in nanoseconds. The terminal of the LS22 and LS23 is an internal connection to ground, however for the best system performance should be hard-wired to ground. Care should be taken to keep and as close to the monostable as possible with a minimum amount of inductance between the / junction and the / pin. Good groundplane and adequate bypassing should be designed into the system for optimum performance to ensure that no false triggering occurs. It should be noted that the pin is internally connected to ground on the LS22 and LS23, but not on the LS22. Therefore, if is hard-wired externally to ground, substitution of a LS22 onto a LS23 socket will cause the LS22 to become non-functional. The switching diode is not needed for electrolytic capacitance application and should not be used on the LS22 and LS23. To find the value of for 000 pf, refer to Figure 4. Variations on or V RC can cause the value of to change, as can the temperature of the LS23, LS22. Figures 5 and 6 show the behavior of the circuit shown in Figures and 2 if separate power supplies are used for and V RC. If is tied to V RC, Figure 7 shows how will vary with and temperature. Remember, the changes in and with temperature are not calculated and included in the graph. As long as 000 pf and 5 260, the change in with respect to is negligible. If 000 pf the graph shown on Figure 8 can be used to determine the output pulse width. Figure 9 shows how will change for 000 pf if and V RC are connected to the same power supply. The pulse width t W in nanoseconds is approximated by t W = (pf) (kω) +.6 In order to trim the output pulse width, it is necessary to include a variable resistor between and the / pin or between and the pin of the LS22. Figure 0,, and 2 show how this can be done. remote should be kept as close to the monostable as possible. Retriggering of the part, as shown in Figure 3, must not occur before is discharged or the retrigger pulse will not have any effect. The discharge time of in nanoseconds is guaranteed to be less than 0.22 (pf) and is typically 0.05 (pf). For the smallest possible deviation in output pulse widths from various devices, it is suggested that be kept 000 pf. 3
4 WAVEFORMS RETRIGGER PULSE (See Application Data) B INPUT OUTPUT t W OUTPUT WITHOUT RETRIGGER EXTENDING PULSE WIDTH B INPUT CLEAR INPUT CLEAR PULSE OUTPUT OUTPUT WITHOUT CLEAR PULSE OVERRIDING THE OUTPUT PULSE 4
5 DC CHARACTERISTICS OVER OPERATING TEMPERATURE RANGE (unless otherwise specified) Symbol Parameter Limits Min Typ Max V IH Input HIGH Voltage 2.0 V Unit Test Conditions Guaranteed Input HIGH Voltage for All Inputs V IL Input LOW Voltage 0.8 V Guaranteed Input LOW Voltage for All Inputs V I Input Clamp Diode Voltage V = MIN, I IN = 8 ma V OH Output HIGH Voltage V = MIN, I OH = MAX, V IN = V IH or V IL per Truth Table V OL I IH Output LOW Voltage Input HIGH Current V I OL = 4.0 ma = MIN, V IN = V IL or V IH V I OL = 8.0 ma per Truth Table 20 μa = MAX, V IN = 2.7 V 0. ma = MAX, V IN = 7.0 V I IL Input LOW Current 0.4 ma = MAX, V IN = 0.4 V I OS Short Circuit Current (Note 2) ma = MAX I CC Power Supply Current LS22 LS Not more than one output should be shorted at a time, nor for more than second. ma = MAX AC CHARACTERISTICS (T A = 25 C, = 5.0 V) Limits Symbol Parameter Min Typ Max Unit Test Conditions t PLH t PHL t PLH t PHL t PLH t PHL Propagation Delay, A to Propagation Delay, A to Propagation Delay, B to Propagation Delay, B to Propagation Delay, Clear to Propagation Delay, Clear to ns ns ns = 0 C L = 5 pf = 5.0 kω R L = 2.0 kω t Wmin A or B to ns = 000 pf, = 0 kω, t W A to B to μs C L = 5 pf, R L = 2.0 kω AC SETUP REUIREMENTS (T A = 25 C, = 5.0 V) Limits Symbol Parameter Min Typ Max Unit t W Pulse Width 40 ns Test Conditions 5
6 V RC V RC P in 5 Ω / CLR B /2 LS23 A GND 0. μf P out P in 5 Ω / CLR B2 B LS22 A2 A GND 0. μf P out Figure. Figure 2. P in P out t W Figure 3. RETRIGGER EXTERNAL CAPACITANCE, ( μ F) Figure 4. 6
7 0.55 V RC = 5 V = 000 pf 0.55 = 5 V = 000 pf 0.55 = 000 pf C 0 C 25 C 70 C 25 C C 55 C 70 C 25 C 25 C C 0 C 25 C 70 C 25 C V RC = V RC Figure 5. versus Figure 6. versus V RC Figure 7. versus and V RC 00000, OUTPUT PULSE WIDTH (ns) t W = 260 kω = 60 kω 00 = 80 kω = 40 kω = 20 kω = 0 kω = 5 kω , EXTERNAL TIMING CAPACITANCE (pf) Figure 8. 7
8 0.65 = 200 pf 55 C C 25 C C 25 C VOLTS Figure 9. PIN 7 OR 5 REMOTE PIN 6 OR 4 Figure 0. LS23 Remote Trimming Circuit 8
9 PIN 9 PIN 3 OPEN REMOTE PIN Figure. LS22 Remote Trimming Circuit Without PIN 9 REMOTE PIN 3 PIN Figure 2. LS22 Remote Trimming Circuit with R int 9
10 PACAGE DIMENSIONS B N SUFFIX PLASTIC PACAGE CASE ISSUE M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. T SEATING PLANE N A INCHES MILLIMETERS DIM MIN MAX MIN MAX A F L B C D C F G 0.00 BSC 2.54 BSC H J L J M 0 0 H G D 4 PL M N (0.005) M T SEATING PLANE G A 4 8 D 4 PL 7 B P 7 PL C 0.25 (0.00) M T B S A S D SUFFIX PLASTIC SOIC PACAGE CASE 75A 03 ISSUE F 0.25 (0.00) M B M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.5 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.27 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES R X 45 F DIM MIN MAX MIN MAX A B C D M J F G.27 BSC BSC J M P R
11 PACAGE DIMENSIONS N SUFFIX PLASTIC PACAGE CASE ISSUE R 6 H A 8 G F 9 D 6 PL B S C 0.25 (0.00) M T T SEATING PLANE A M J L M NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEADS WHEN FORMED PARALLEL. 4. DIMENSION B DOES NOT INCLUDE MOLD FLASH. 5. ROUNDED CORNERS OPTIONAL. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G 0.00 BSC 2.54 BSC H BSC.27 BSC J L M S D SUFFIX PLASTIC SOIC PACAGE CASE 75B 05 ISSUE J T SEATING PLANE G A B D 6 PL 0.25 (0.00) M T B S A S P 8 PL 0.25 (0.00) M B S C M R X 45 J F NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.5 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.27 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. MILLIMETERS INCHES DIM MIN MAX MIN MAX A B C D F G.27 BSC BSC J M P R
12 PACAGE DIMENSIONS M SUFFIX SOEIAJ PACAGE CASE ISSUE O e 6 9 Z b D A H E A 0.3 (0.005) M 0.0 (0.004) 8 E VIEW P M L E L DETAIL P c NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS AND ARE MEASURED AT THE PARTING LINE. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.5 (0.006) PER SIDE. 4. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 5. THE LEAD WIDTH DIMENSION (b) DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE LEAD WIDTH DIMENSION AT MAXIMUM MATERIAL CONDITION. DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OR THE FOOT. MINIMUM SPACE BETWEEN PROTRUSIONS AND ADJACENT LEAD TO BE 0.46 ( 0.08). MILLIMETERS INCHES DIM MIN MAX MIN MAX A A b c D E e.27 BSC BSC H E L L E M Z ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 563, Denver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative SN74LS22/D
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 646 SOIC D SUFFIX CASE 751A
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MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
PIN CONNECTIONS
The NCP4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over dissipation they cannot be
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NDF10N62Z. N-Channel Power MOSFET
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches
High-Speed USB 2.0 (480 Mbps) DPDT Switches ON Semiconductor s NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company s advanced sub micron CMOS technology,
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems
MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch
High-Speed USB 2.0 (480 Mbps) DPST Switch The NLAS723 is a DPST switch optimized for high speed USB 2.0 applications within portable systems. It features ultra low off capacitance, C OFF = 3.0 pf (typ),
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
LM339S, LM2901S. Single Supply Quad Comparators
LM339S, LM290S Single Supply Quad Comparators These comparators are designed for use in level detection, low level sensing and memory applications in consumer and industrial electronic applications. Features
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
NGB8207AN, NGB8207ABN. Ignition IGBT 20 A, 365 V, N Channel D 2 PAK. 20 AMPS, 365 VOLTS V CE(on) = 1.75 V I C = 10 A, V GE 4.
NGB827AN, NGB827ABN Ignition IGBT 2 A, 365 V, N Channel D 2 PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
Is Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
Characteristic Symbol Max Unit P D 625 mw
Advance Information Integrated Relay/Solenoid Driver Optimized to Switch 3 V to 5 V Relays from a 5 V Rail Compatible with TX and TQ Series Telecom Relays Rated up to 625 mw at 3 V to 5 V Features Low
NCV1009ZG. 2.5 Volt Reference
V9 2.5 Volt Reference The V9 is a precision trimmed 2.5 V ±5. mv shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance
CS5205A A Adjustable Linear Regulator
5.0 A Adjustable Linear Regulator The linear regulator provides 5.0 A at an adjustable voltage with an accuracy of ±1%. Two external resistors are used to set the output voltage within a 1.25 V to 13 V
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
EMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
1N6373-1N6381 Series (ICTE-5 - ICTE-36) 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors. Unidirectional*
N6373 - N638 Series (ICTE-5 - ICTE-36) 5 Watt Peak Power Mosorb Zener Transient Voltage Suppressors Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage,
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
ASM3P2669/D. Peak EMI Reducing Solution. Features. Product Description. Application. Block Diagram
Peak EMI Reducing Solution Features Generates a X low EMI spread spectrum clock of the input frequency. Integrated loop filter components. Operates with a 3.3V / 2.5V supply. Operating current less than
MARKING DIAGRAMS Figure 1. Logic Diagram ORDERING INFORMATION Figure 2. Dip Pin Assignment CDIP 16 L SUFFIX CASE 620A
The MC0H6 is a functional/pinout duplication of the MC06, with 00% improvement in propagation delay and no increase in power supply current. Propagation Delay,.0 ns Typical Power Dissipation 85 mw Typ/Pkg
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
NGD15N41CL, NGB15N41CL, NGP15N41CL. Ignition IGBT 15 Amps, 410 Volts N Channel DPAK, D 2 PAK and TO 220
NGD5NCL, NGB5NCL, NGP5NCL Preferred Device Ignition IGBT 5 Amps, Volts N Channel DPAK, D PAK and TO This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
NCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability
USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and