PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram
|
|
|
- Adrian McCoy
- 5 years ago
- Views:
Transcription
1 3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded outputs Input-Output delay: 6nS(max) Output-output skew less than 250pS 16-pin SOIC Package Supply Voltage: 3.3V ± 0.3V Functional Description PCS2P2309NZ is a low-cost high-speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The device operates at 3.3V and outputs can run up to MHz. PCS2P2309NZ is designed for low EMI and power optimization and consumes less than 32mA at 66.6MHz, making it ideal for the low-power requirements of mobile systems. It is available in an 16-pin SOIC Package. Block Diagram BUF_IN SCILLC. All rights reserved. Publication Order Number: NOVEMBER 2010 Rev. 1.1 PCS2P2309/D
2 Pin Configuration BUF_IN PCS2P2309NZ Pin Description Pin# Pin Name Description 4, 8, V Digital Voltage Supply 5, 9, 12 Ground 1 BUF_IN Input Clock 2, 3, 6, 7, 10, 11, 14, 15, 16 [1:9] Outputs Absolute Maximum Ratings Parameter Min Max Unit Supply Voltage to Ground Potential V DC Input Voltage (Except REF) V DC Input Voltage (REF) V Storage Temperature C Max. Soldering Temperature (10 sec) 260 C Junction Temperature 150 C Static Discharge Voltage (As per JEDEC STD22- A114-B) Note: These are stress ratings only and functional usage is not implied. Exposure to absolute maximum ratings for prolonged periods can affect device reliability V
3 Operating Conditions Parameter Description Min Max Unit Supply Voltage V T A Operating Temperature C C L Load Capacitance, Fout < 100MHz 30 pf Load Capacitance,100MHz < Fout < MHz 15 pf C IN Input Capacitance 7 pf BUF_IN, [1:9] t PU Operating Frequency DC MHz Power-up time for all s to reach minimum specified voltage (power ramps must be monotonic) ms Electrical Characteristics Notes: Symbol Parameter Test Conditions Min Max Unit V IL Input LOW Voltage V V IH Input HIGH Voltage V I IL Input LOW Current V IN = 0V 50.0 µa I IH Input HIGH Current V IN = µa V OL Output LOW Voltage 2 I OL = 12mA 0.4 V V OH Output HIGH Voltage 2 I OH = -12mA 2.4 V I DD Supply Current 0 C to +70 C 30 Unloaded outputs at 66.66MHz -40 C to +85 C BUF_IN input has a threshold voltage of /2. 2. Parameter is guaranteed by design and characterization. It is not 100% tested in production. ma Switching Characteristics 1 Symbol Parameter Test Conditions Min Typ Max Unit t 3 Rise Time 2 Measured between 0.8V and 2.0V ns t 4 Fall Time 2 Measured between 2.0V and 0.8V ns t D Duty Cycle 2 = t 2 t 1 Measured at 1.4V (For an Input Clock Duty Cycle 50%) % t 5 Output to Output Skew 2 All outputs equally loaded ±250 ps t 6 Propagation Delay, BUF_IN Rising Edge to Measured at /2 4 6 ns Rising Edge 2 Note: 1. All parameters specified with loaded outputs. 2. Parameter is guaranteed by design and characterization. It is not 100% tested in production.
4 Switching Waveforms Duty Cycle Timing t 1 t 2 1.4V 1.4V 1.4V All Outputs Rise/Fall Time 2V 2V VDD 0.8V 0.8V 0V t 3 t 4 Output-Output Skew 1.4V 1.4V t 5 Input-Output Propagation Delay /2 INPUT /2 Test Circuit BUF-IN +3.3V 3 PCS2P2309NZ 0.1uF 3 CL
5 Package Information 16-lead (150 Mil) Molded SOIC 8 1 PIN 1 ID E H 9 16 D A2 Seating Plane h e A1 A D θ L C B Dimensions Symbol Inches Millimeters Min Max Min Max A A A B C D E e BSC 1.27 BSC H h L θ
6 Ordering Code Part Number Marking Package Type Temperature P2I2309NZG-16-ST 2I2309NZ 16-pin 150-mil SOIC, Green -40 C to +85 C PCS2I2309NZG16SR 2I2309NZ 16-pin 150-mil SOIC,Tape and Reel, Green -40 C to +85 C A G placed at the end of last row of marking or just below the last row toward the center of package indicates Pb-free for 16 pin SOIC packages. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. U.S Patent Pending; Timing-Safe and Active Bead are trademarks of PulseCore Semiconductor, a wholly owned subsidiary of ON Semiconductor. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative
PCS2I2309NZ. 3.3 V 1:9 Clock Buffer
. V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
ASM3P2669/D. Peak EMI Reducing Solution. Features. Product Description. Application. Block Diagram
Peak EMI Reducing Solution Features Generates a X low EMI spread spectrum clock of the input frequency. Integrated loop filter components. Operates with a 3.3V / 2.5V supply. Operating current less than
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Application. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
PCS3P8103A General Purpose Peak EMI Reduction IC
General Purpose Peak EMI Reduction IC Features Generates a 4x low EMI spread spectrum clock Input Frequency: 16.667MHz Output Frequency: 66.66MHz Tri-level frequency Deviation Selection: Down Spread, Center
P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
P2042A LCD Panel EMI Reduction IC
LCD Panel EMI Reduction IC Features FCC approved method of EMI attenuation Provides up to 15dB of EMI suppression Generates a low EMI spread spectrum clock of the input frequency Input frequency range:
PCS3P73U00/D. USB 2.0 Peak EMI reduction IC. General Features. Applications. Product Description. Block Diagram
USB 2.0 Peak EMI reduction IC General Features 1x Peak EMI Reduction IC Input frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Output frequency: 10MHz - 60MHz @ 2.5V 10MHz - 70MHz @ 3.3V Supply Voltage:
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
ASM1232LP/LPS 5V μp Power Supply Monitor and Reset Circuit
5V μp Power Supply Monitor and Reset Circuit General Description The ASM1232LP/LPS is a fully integrated microprocessor Supervisor. It can halt and restart a hung-up microprocessor, restart a microprocessor
NB2879A. Low Power, Reduced EMI Clock Synthesizer
Low Power, Reduced EMI Clock Synthesizer The NB2879A is a versatile spread spectrum frequency modulator designed specifically for a wide range of clock frequencies. The NB2879A reduces ElectroMagnetic
NTS4172NT1G. Power MOSFET. 30 V, 1.7 A, Single N Channel, SC 70. Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device
Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70
NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches
High-Speed USB 2.0 (480 Mbps) DPDT Switches ON Semiconductor s NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company s advanced sub micron CMOS technology,
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
NB3N502/D. 14 MHz to 190 MHz PLL Clock Multiplier
4 MHz to 90 MHz PLL Clock Multiplier Description The NB3N502 is a clock multiplier device that generates a low jitter, TTL/CMOS level output clock which is a precise multiple of the external input reference
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
NCN Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3
4-Differential Channel 1:2 Mux/Demux Switch for PCI Express Gen3 The NCN3411 is a 4 Channel differential SPDT switch designed to route PCI Express Gen3 signals. When used in a PCI Express application,
NLAS7213. High-Speed USB 2.0 (480 Mbps) DPST Switch
High-Speed USB 2.0 (480 Mbps) DPST Switch The NLAS723 is a DPST switch optimized for high speed USB 2.0 applications within portable systems. It features ultra low off capacitance, C OFF = 3.0 pf (typ),
NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package
NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments
NTGD4167C. Power MOSFET Complementary, 30 V, +2.9/ 2.2 A, TSOP 6 Dual
Power MOSFET Complementary, 3 V, +.9/. A, TSOP 6 Dual Features Complementary N Channel and P Channel MOSFET Small Size (3 x 3 mm) Dual TSOP 6 Package Leading Edge Trench Technology for Low On Resistance
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88
NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable
Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
NDF10N62Z. N-Channel Power MOSFET
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant V DSS R
1Mb Ultra-Low Power Asynchronous CMOS SRAM. Features. Power Supply (Vcc) Operating Temperature A 0 -A 16 I/O 0 -I/O 7
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K 8 bit N01L83W2A Overview The N01L83W2A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 131,072 words by 8 bits.
NTMD4840NR2G. Power MOSFET 30 V, 7.5 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET 3 V, 7. A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual
SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY
Retriggerable Monostable Multivibrators These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
NVD5865NL. Power MOSFET 60 V, 46 A, 16 m, Single N Channel
Power MOSFET 6 V, 6 A, 16 m, Single N Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q1 Qualified These Devices are Pb Free, Halogen
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
MM74HC04 Hex Inverter
MM74HC04 Hex Inverter Features Typical propagation delay: 8ns Fan out of 10 LS-TTL loads Quiescent power consumption: 10µW maximum at room temperature Low input current: 1µA maximum General Description
ASM1816. Low Power, 3.3 V/3.0 V, P Reset, Active LOW, Open-Drain Output
Low Power, 3.3 V/3.0 V, P Reset, Active LOW, Open-Drain Output Description The ASM1816 is a voltage supervisory device with low power, 3.3 V/3 V P Reset, active LOW, open drain output. Maximum supply current
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
NTLUF4189NZ Power MOSFET and Schottky Diode
NTLUF89NZ Power MOSFET and Schottky Diode V, N Channel with. A Schottky Barrier Diode,. x. x. mm Cool Package Features Low Qg and Capacitance to Minimize Switching Losses Low Profile UDFN.x. mm for Board
MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
NSQA6V8AW5T2 Series Transient Voltage Suppressor
Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection.
PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V
NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive
MJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
MC3488A. Dual EIA 423/EIA 232D Line Driver
Dual EIA423/EIA232D Line Driver The MC34A dual is singleended line driver has been designed to satisfy the requirements of EIA standards EIA423 and EIA232D, as well as CCITT X.26, X.2 and Federal Standard
7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75
NDFNZ N-Channel Power MOSFET V,.7 Features Low ON Resistance Low Gate Charge ESD Diode Protected Gate % Avalanche Tested % R g Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant
P1P Portable Gaming Audio/Video Multimedia. MARKING DIAGRAM. Features
.8V, 4-PLL Low Power Clock Generator with Spread Spectrum Functional Description The PP4067 is a high precision frequency synthesizer designed to operate with a 27 MHz fundamental mode crystal. Device
NTLUS3A90PZ. Power MOSFET 20 V, 5.0 A, Cool Single P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUS3A9PZ Power MOSFET V, 5. A, Cool Single P Channel, ESD,.x.x.55 mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x.55 mm for Board Space
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
NTLUD3A260PZ. Power MOSFET 20 V, 2.1 A, Cool Dual P Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUDAPZ Power MOSFET V,. A, Cool Dual P Channel, ESD,.x.x. mm UDFN Package Features UDFN Package with Exposed Drain Pads for Excellent Thermal Conduction Low Profile UDFN.x.x. mm for Board Space Saving
PIN CONNECTIONS
The NCP4421/4422 are high current buffer/drivers capable of driving large MOSFETs and IGBTs. They are essentially immune to any form of upset except direct overvoltage or over dissipation they cannot be
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
NTMD4820NR2G. Power MOSFET 30 V, 8 A, Dual N Channel, SOIC 8
NTMDN Power MOSFET V, A, Dual N Channel, SOIC Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Dual SOIC
MM74HC14 Hex Inverting Schmitt Trigger
MM74HC14 Hex Inverting Schmitt Trigger Features Typical propagation delay: 13ns Wide power supply range: 2V 6V Low quiescent current: 20µA maximum (74HC Series) Low input current: 1µA maximum Fanout of
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
CMPWR ma SmartOR Regulator with V AUX Switch
50 ma SmartOR Regulator with Switch Product Description The ON Semiconductor s SmartOR is a low dropout regulator that delivers up to 50 ma of load current at a fixed 3.3 V output. An internal threshold
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
CAT884. Quad Voltage Supervisor
Quad Voltage Supervisor Description The is a fourchannel power supply supervisory circuit with high accuracy reset thresholds and very low power consumption. The device features an activelow opendrain
NCP304A. Voltage Detector Series
Voltage Detector Series The NCP0A is a second generation ultralow current voltage detector. This device is specifically designed for use as a reset controller in portable microprocessor based systems where
NTD5805N, NVD5805N. Power MOSFET 40 V, 51 A, Single N Channel, DPAK
NTD585N, NVD585N Power MOSFET V, 5 A, Single N Channel, Features Low R DS(on) High Current Capability Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring Unique Site and
MUN5311DW1T1G Series.
MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single
NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
CAT5126. One time Digital 32 tap Potentiometer (POT)
One time Digital 32 tap Potentiometer (POT) Description The CAT5126 is a digital POT. The wiper position is controlled with a simple 2-wire digital interface. This digital potentiometer is unique in that
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF64MU is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 5 pf deliver
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NUD4700. LED Shunt. Features. Typical Applications MARKING DIAGRAM PIN FUNCTION DESCRIPTION ORDERING INFORMATION.
LED Shunt The is an electronic shunt which provides a current bypass in the case of a single LED going into open circuit. LEDs are by nature quite fragile when subjected to transients and surge conditions.
MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURA5T3G, MURAT3G, SURA8T3G Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
AND8285/D. NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure SIMULATION NOTE
NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure Prepared by: Bertrand Renaud On Semiconductor SIMULATION NOTE Overview The NCP1521B step down PWM DC DC converter is optimized
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NCN1154. DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability
DP3T USB 2.0 High Speed / Audio Switch with Negative Swing Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable systems
MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS
MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per
CAX803, CAX809, CAX Pin Microprocessor Power Supply Supervisors
3-Pin Microprocessor Power Supply Supervisors Description The CAX83, CAX89, and CAX81 are supervisory circuits that monitor power supplies in digital systems. The CAX83, CAX89, and CAX81 are direct replacements
MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS
MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
NLAS5157. Ultra-Low 0.4 SPDT Analog Switch
Ultra-Low.4 SPDT Analog Switch The NLAS5157 is Single Pole Double Throw (SPDT) switch designed for audio systems in portable applications. The NLAS5157 features Ultra Low R ON of.4 typical at = V and.15
MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS
MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
NCN1154. USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability
USB 2.0 High Speed, UART and Audio Switch with Negative Signal Capability The NCN1154 is a DP3T switch for combined true ground audio, USB 2.0 high speed data, and UART applications. It allows portable
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NUF6105FCT1G. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF615FC is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 27 pf deliver
NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE
Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
NUF8001MUT2G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF8MU is a eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 2 pf deliver
74VHC14 Hex Schmitt Inverter
74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection
NSS40301MDR2G. 40 VOLTS 6.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS3MDR2G Dual Matched V, 6. A, Low V CE(sat) NPN Transistor These transistors are part of the ON Semiconductor e 2 PowerEdge family of Low V CE(sat) transistors. They are assembled to create a pair of
MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network
MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
MBRM110LT3G NRVBM110LT1G NRVBM110LT3G. Surface Mount Schottky Power Rectifier. POWERMITE Power Surface Mount Package
MBRM11LT1G, NRVBM11LT1G, NRVBM11LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package The Schottky employs the Schottky Barrier principle with a barrier metal and epitaxial construction
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input
NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input General Description The NC7S14 is a single high performance CMOS Inverter with Schmitt Trigger input. The circuit design provides hysteresis between