Programmable Unijunction Transistor Triggers
|
|
|
- Evan Campbell
- 5 years ago
- Views:
Transcription
1 查询 RLRP 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 Preferred Device Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as RBB, η, IV, and IP by merely selecting two resistor values. pplication includes thyristor trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO 92 plastic package for high volume requirements, this package is readily adaptable for use in automatic insertion equipment. Programmable RBB, η, IV and IP Low On State Voltage 1.5 Volts IF = 50 m Low ate to node Leakage Current n Maximum High Peak Output Voltage 11 Volts Typical Low Offset Voltage 0.35 Volt Typical (R = k ohms) Device Marking: Logo, Device Type, e.g.,, Date Code PUTs 40 VOLTS 300 mw MXIMUM RTINS (TJ = 25 C unless otherwise noted) *Power Dissipation Derate bove 25 C *DC Forward node Current Derate bove 25 C Rating Symbol Value Unit PF 1/θJ IT mw mw/ C m m/ C *DC ate Current I 50 m Repetitive Peak Forward Current 0 µs Pulse Width, 1% Duty Cycle *20 µs Pulse Width, 1% Duty Cycle Non Repetitive Peak Forward Current µs Pulse Width ITRM mps ITSM mps *ate to Cathode Forward Voltage VF 40 Volts *ate to Cathode Reverse Voltage VR Volts *ate to node Reverse Voltage VR 40 Volts *node to Cathode Voltage(1) V 40 Volts Operating Junction Temperature Range TJ 50 to +0 *Storage Temperature Range Tstg 55 to +150 *Indicates JEDEC Registered Data (1) node positive, R = 00 ohms node negative, R = open C C TO 92 (TO 226) CSE 029 STYLE 16 PIN SSINMENT node ate Cathode ORDERIN INFORMTION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Preferred devices are recommended choices for future use and best overall value.
2 , THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 75 C/W Thermal Resistance, Junction to mbient RθJ 200 C/W Maximum Lead Temperature for Soldering Purposes (1/16 from case, secs max) TL 260 C ELECTRICL CHRCTERISTICS (TC = 25 C unless otherwise noted.) Characteristic Fig. No. Symbol Min Typ Max Unit *Peak Current (VS = Vdc, R = 1 MΩ) (VS = Vdc, R = k ohms) 2,9,11 IP µ *Offset Voltage (VS = Vdc, R = 1 MΩ) (VS = Vdc, R = k ohms) (Both Types) 1 VT Volts *Valley Current (VS = Vdc, R = 1 MΩ) (VS = Vdc, R = k ohms) (VS = Vdc, R = 200 ohms) 1,4,5 IV µ m *ate to node Leakage Current (VS = 40 Vdc, T = 25 C, Cathode Open) (VS = 40 Vdc, T = 75 C, Cathode Open) ate to Cathode Leakage Current (VS = 40 Vdc, node to Cathode Shorted) IO 3.0 ndc IS 50 ndc *Forward Voltage (IF = 50 m Peak)(1) 1,6 VF Volts *Peak Output Voltage (V = 20 Vdc, CC = µf) Pulse Voltage Rise Time (VB = 20 Vdc, CC = µf) *Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width 300 µsec, Duty Cycle 2%. 3,7 Vo Volt 3 tr ns
3 , I V +VB 1 Programmable Unijunction with Program Resistors and R2 I R2 VS = + R2 VB + V R = R 1B Equivalent Test Circuit for Figure 1 used for electrical characteristics testing (also see Figure 2) R2 + R2 VS Figure 1. Electrical Characterization IO V VS VF VV IP VP VT = VP VS IV IF IC Electrical Characteristics I djust for Turn on Threshold 0k % IP (SENSE) 0 µv = n + 2N5270 R 5k +VB 16k +V Vo 6 V VB Scope µf Put Under Test R = R/2 VS = VB/2 (See Figure 1) R CC vo 20 Ω 27k 0.6 V tf t Figure 2. Peak Current (IP) Test Circuit Figure 3. Vo and tr Test Circuit
4 , TYPICL VLLEY CURRENT BEHVIOR I V, VLLEY CURRENT ( µ ) 0 R = kω 0 kω 1 MΩ I V, VLLEY CURRENT ( µ ) 0 R = kω 0 kω 1 MΩ VS, SUPPLY VOLTE (VOLTS) Figure 4. Effect of Supply Voltage T, MBIENT TEMPERTURE ( C) Figure 5. Effect of Temperature V F, PE FORWRD VOLTE (VOLTS) T = 25 C V, PE OUTPUT VOLTE (VOLTS) o T = 25 C (SEE FIURE 3) CC = µf 00 pf IF, PE FORWRD CURRENT (MP) Figure 6. Forward Voltage VS, SUPPLY VOLTE (VOLTS) Figure 7. Peak Output Voltage Circuit Symbol E P N P N B2 R2 η = B1 Equivalent Circuit with External Program Resistors and R2 RBB = + R2 + R2 CC RT R2 Typical pplication + Figure 8. Programmable Unijunction
5 , TYPICL PE CURRENT BEHVIOR I P, PE CURRENT ( µ ) R = kω 0 kω MΩ T = 25 C (SEE FIURE 2) I P, PE CURRENT ( µ ) R = kω 0 kω VS = VOLTS (SEE FIURE 2) MΩ VS, SUPPLY VOLTE (VOLTS) Figure 9. Effect of Supply Voltage and R T, MBIENT TEMPERTURE ( C) Figure. Effect of Temperature and R I P, PE CURRENT ( µ ) R = kω 0 kω MΩ T = 25 C (SEE FIURE 2) I P, PE CURRENT ( µ ) 0.05 R = kω 0 kω VS = VOLTS (SEE FIURE 2) 0.02 MΩ VS, SUPPLY VOLTE (VOLTS) Figure 11. Effect of Supply Voltage and R T, MBIENT TEMPERTURE ( C) Figure 12. Effect of Temperature and R
6 , TO 92 EI RDIL TPE IN FN FOLD BOX OR ON REEL H2 H2 H2B H2B H W2 H4 H5 L L1 H1 W1 W T1 T F1 F2 T2 P2 P2 P1 P Figure 13. Device Positioning on Tape D Specification Inches Millimeter Symbol Item Min Max Min Max D Tape Feedhole Diameter D2 Component Lead Thickness Dimension F1, F2 Component Lead Pitch H Bottom of Component to Seating Plane H1 Feedhole Location H2 Deflection Left or Right H2B Deflection Front or Rear H4 Feedhole to Bottom of Component H5 Feedhole to Seating Plane L Defective Unit Clipped Dimension L1 Lead Wire Enclosure P Feedhole Pitch P1 Feedhole Center to Center Lead P2 First Lead Spacing Dimension T dhesive Tape Thickness T1 Overall Taped Package Thickness T2 Carrier Strip Thickness W Carrier Strip Width W1 dhesive Tape Width W2 dhesive Tape Position NOTES: 1. Maximum alignment deviation between leads not to be greater than mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum non cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than 1 consecutive missing component is permitted. 7. tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes.
7 , ORDERIN & SHIPPIN INFORMTION: and packaging options, Device Suffix U.S.,, RLR RLRM RLRP Europe Equivalent Shipping Description of TO92 Tape Orientation RL1 Bulk in Box (5/Box) Radial Tape and Reel (2/Reel) Radial Tape and Reel (2/Reel) Radial Tape and Fan Fold Box (2/Box) Radial Tape and Fan Fold Box (2/Box) N/, Bulk Round side of TO92 and adhesive tape visible Flat side of TO92 and adhesive tape visible Flat side of TO92 and adhesive tape visible Round side of TO92 and adhesive tape visible PCE DIMENSIONS TO 92 (TO 226) CSE ISSUE J B NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y14.5M, CONTROLLIN DIMENSION: INCH. R 3. CONTOUR OF PCE BEYOND DIMENSION R IS UNCONTROLLED. P 4. LED DIMENSION IS UNCONTROLLED IN P ND BEYOND DIMENSION MINIMUM. L SETIN INCHES MILLIMETERS PLNE DIM MIN MX MIN MX B C X X D D H H J J L V C N N P SECTION X X R V N STYLE 16: PIN 1. NODE 2. TE 3. CTHODE
8 , ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. PUBLICTION ORDERIN INFORMTION NORTH MERIC Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free US/Canada N. merican Technical Support: Toll Free US/Canada EUROPE: LDC for ON Semiconductor European Support erman Phone: (+1) (M F 1:00pm to 5:00pm Munich Time) ONlit german@hibbertco.com French Phone: (+1) (M F 1:00pm to 5:00pm Toulouse Time) ONlit french@hibbertco.com English Phone: (+1) (M F 12:00pm to 5:00pm U Time) ONlit@hibbertco.com EUROPEN TOLL FREE CCESS*: *vailable from ermany, France, Italy, England, Ireland CENTRL/SOUTH MERIC: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com SI/PCIFIC: LDC for ON Semiconductor sia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong ong Time) Toll Free from Hong ong & Singapore: ONlit asia@hibbertco.com JPN: ON Semiconductor, Japan Customer Focus Center Nishi otanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative.
2N6027, 2N6028. Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers. PUTs 40 VOLTS 300 mw
Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as R BB, η, I V, and I P by
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS
... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage V CE(sat) = 1.0 Vdc, (max) at I C = 15 Adc Low Leakage Current I CEX = 1.0 madc (max)
MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT
The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution for low voltage detection
ULTRAFAST RECTIFIERS 8.0 AMPERES VOLTS
Preferred Devices... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: Ultrafast 25, 50 and 75 Nanosecond
DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage
...designed for general purpose and low speed switching applications. High DC Current Gain h FE = 2500 (typ.) at I C = 4.0 Collector Emitter Sustaining Voltage at 100 madc V CEO(sus) = 80 Vdc (min.) BDX33B,
P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector
2N3055A MJ AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc V CEO(sus) = 60 Vdc
NYE08-10B6TG. Protected TRIAC
NYE8-B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive
50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1.
... designed for use in high power amplifier and switching circuit applications. High Current Capability I C Continuous = 50 Amperes. DC Current Gain h FE = 15 60 @ I C = 25 Adc Low Collector Emitter Saturation
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
DPAK Surface Mount Package
MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices DPAK Surface Mount Package...in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following
30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Temperature Derating Curve
... for use as an output device in complementary audio amplifiers to 100 Watts music power per channel. High DC Current Gain h FE = 25 100 @ I C = 7.5 A Excellent Safe Operating Area Complement to the
2N3771, 2N and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for linear amplifiers, series pass regulators, and inductive switching applications. Forward Biased Second Breakdown Current Capability I S/b = 3.75 Adc @ V CE = 40 2N3771 = 2.5 Adc @ V CE
MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Drain Gate Voltage V DG 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc Total Device Dissipation
TMOS E FET. Power Field Effect Transistor MTP8N50E. N Channel Enhancement Mode Silicon Gate
TMOS E FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate MTP8N5E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without
30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS MAXIMUM RATINGS. Figure 1. Power Temperature Derating Curve
... for use as an output device in complementary audio amplifiers to 100 Watts music power per channel. High DC Current Gain h FE = 25 100 @ I C = 7.5 A Excellent Safe Operating Area Complement to the
500 mw SOD 123 Surface Mount
500 mw SOD 123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 123 package. These devices provide a convenient alternative to the leadless 34
MURA215T3G SURA8215T3G MURA220T3G SURA8220T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 2 AMPERES, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
MURA105, SURA8105, MURA110, SURA8110. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MUR5, SUR85, MUR, SUR8 Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where
MSR860G, MSRF860G. Switch-mode Soft Recovery Power Rectifiers. Plastic TO 220 Package SOFT RECOVERY POWER RECTIFIER 8.0 AMPERES, 600 VOLTS
MSRG, MSRFG Switch-mode Soft Recovery Power Rectifiers Plastic TO Package These state of the art devices are designed for use as free wheeling diodes in variable speed motor control applications and switching
MURA130T3G SURA8130T3G MURA140T3G SURA8140T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS
MURTG, SUR8TG, MURTG, SUR8TG Preferred Devices Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface
BC546, B BC547, A, B, C BC548, A, B, C
NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 Unit Collector Emitter oltage CEO 65 45 30 dc Collector Base oltage CBO 80 50 30 dc Emitter Base oltage EBO 6.0 dc Collector Current Continuous I C
MJ10015 MJ AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
The MJ10015 and MJ10016 Darlington transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
MARKING DIAGRAMS MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 1.) ORDERING INFORMATION PDIP 14 P SUFFIX CASE 646
The MC14106B hex Schmitt Trigger is constructed with MOS P channel and N channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or
MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
MSR56G, MSRF56G Switch-mode Soft Recovery Power Rectifier These state of the art devices are designed for boost converter or hard switched converter applications, especially for Power Factor Correction
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
The SN74LS64 is a high speed 8-Bit Serial-In Parallel-Out Shift Register. Serial data is entered through a 2-Input AN gate synchronous with the LOW to HIGH transition of the clock. The device features
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
MBRB20200CT. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS
Preferred Device Dual Schottky Rectifier... using Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency switching power supplies
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
APPLICATION NOTE. where Vundershoot = (Vref lower) Gnd. Hence the retrigger time is given by:
Prepared by: Douglas M. Buzard, Rodolfo E. Soto Introduction The MC74HC4538A is a monostable multivibrator commonly used as a one shot, or in applications that require a pulse width of reliable dimensions.
MARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION MC3x58P1 AWL YYWW PDIP 8 P1 SUFFIX CASE 626 SO 8 D SUFFIX CASE 751 3x58 ALYW
Utilizing the circuit designs perfected for the quad operational amplifiers, these dual operational amplifiers feature: low power drain, a common mode input voltage range extending to ground/v EE, and
MBR7030WTG. Switch Mode Power Rectifier SCHOTTKY BARRIER RECTIFIER 70 AMPERES, 30 VOLTS
Switch Mode Power Rectifier The Switch Mode power rectifier, a state of the art device, employs the use of the Schottky Barrier principle with a Platinum barrier metal. Features Dual Diode Construction;
BAV70DXV6T1, BAV70DXV6T5 Preferred Device. Monolithic Dual Switching Diode Common Cathode. Lead-Free Solder Plating.
BAV70DXV6T1, BAV70DXV6T5 Preferred Device Monolithic Dual Switching Diode Common Cathode LeadFree Solder Plating MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward
MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS
MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction
MR2520LRL. Overvoltage Transient Suppressor OVERVOLTAGE TRANSIENT SUPPRESSOR VOLTS
Overvoltage Transient Suppressor Designed for applications requiring a low voltage rectifier with reverse avalanche characteristics for use as reverse power transient suppressors. Developed to suppress
Unidirectional*
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
Unidirectional* PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS VOLTS 400 WATTS PEAK POWER
Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance
MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package
MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.
MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS
MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Symbol MJE18204 MJF18204 Unit
The MJE/MJF18204 have an application specific state of the art die dedicated to the electronic ballast ( light ballast ) and power supply applications. Improved Global Efficiency Due to Low Base Drive
MC14521B. MARKING DIAGRAMS. MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 2.) ORDERING INFORMATION PDIP 16 P SUFFIX CASE 648
The MC452B consists of a chain of 24 flip flops with an input circuit that allows three modes of operation. The input will function as a crystal oscillator, an RC oscillator, or as an input buffer for
MJD340 (NPN) MJD350 (PNP) High Voltage Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 0.5 AMPERE 300 VOLTS, 15 WATTS
MJD (NPN) MJD (PNP) High oltage Power Transistors For Surface Mount pplications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. Features
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
NPN Silicon ON Semiconductor Preferred Device
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector
TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit
The MC1455 monolithic timing circuit is a highly stable controller capable of producing accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if desired. In
PIN CONNECTIONS ORDERING INFORMATION FUNCTIONAL TABLE
The MC12026 is a high frequency, low voltage dual modulus prescaler used in phase locked loop (PLL) applications. The MC12026A can be used with CMOS synthesizers requiring positive edges to trigger internal
2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features
Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international
MBRS2040LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.
MBRS24LT3 Surface Mount Schottky Power Rectifier Power Surface Mount Package... employing the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide
Z0107MA TRIACS 1.0 AMPERE RMS 600 VOLTS
Z7MA Sensitive ate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
MDC5101R2 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICL DT Order this document by MDC511/D The MDC511 inputs TxE and RxE Logic Signals with an accessory input termination option and, allows positive and negative control voltages in accordance
Distributed by: www.jameco.com -800-8-44 The content and copyrights of the attached material are the property of its owner. Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier
NTMKB4895NT3G. Power MOSFET 30 V, 82 A, Single N Channel, ICEPAK
Power MOSFET V,, Single N Channel, Features Low Package Inductance Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
The MC10109 is a dual 4 5 input OR/NOR gate. P D = 30 mw typ/gate (No Load) t pd = 2.0 ns typ t r, t f = 2.0 ns typ (20% 80%)
The MC10109 is a dual 5 input OR/NOR gate. P D = 0 mw typ/gate (No Load) t pd =.0 ns typ t r, t f =.0 ns typ (0% 0%) LOGIC DIAGRAM MARKING DIAGRAMS CDIP 16 L SUFFIX CASE 60 PDIP 16 P SUFFIX CASE 6 PLCC
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 madc Total Device Dissipation
MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
DUAL TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit
The MC3456 dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In the
NTMD4184PFR2G. Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode Features
NTMDPF Power MOSFET and Schottky Diode -3 V, -. A, Single P-Channel with V,. A, Schottky Barrier Diode Features FETKY Surface Mount Package Saves Board Space Independent Pin-Out for MOSFET and Schottky
MC100EPT22/D. MARKING DIAGRAMS* ORDERING INFORMATION SO 8 D SUFFIX CASE 751 KPT22 ALYW TSSOP 8 DT SUFFIX CASE 948R KA22 ALYW
The MC00EPT22 is a dual LVTTL/LVCMOS to differential LVPECL translator. Because LVPECL (Positive ECL) levels are used only +3.3 V and ground are required. The small outline lead package and the single
ORDERING INFORMATION MAXIMUM RATINGS AXIAL LEAD CASE 41A PLASTIC MPTE 1N 63xx YYWW ICTE YYWW
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate
EFC8811R Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27A, Dual N-Channel
Power MOSFET for 1-Cell Lithium-ion Battery Protection 12V, 3.2mΩ, 27, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power switches
PERIPHERAL DRIVER ARRAYS
The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage
MCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits,
MUR1620CTRG, MURB1620CTRG, NRVUB1620CTRT4G. SWITCHMODE Power Rectifier ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS
MUR20CTRG, MURB20CTRG, NRVUB20CTRT4G SWITCHMODE Power Rectifier These state of the art devices are designed for use in negative switching power supplies, inverters and as free wheeling diodes. lso, used
MARKING DIAGRAMS Figure 1. Logic Diagram ORDERING INFORMATION Figure 2. Dip Pin Assignment CDIP 16 L SUFFIX CASE 620A
The MC0H6 is a functional/pinout duplication of the MC06, with 00% improvement in propagation delay and no increase in power supply current. Propagation Delay,.0 ns Typical Power Dissipation 85 mw Typ/Pkg
LOGIC DIAGRAM AND PINOUT ASSIGNMENT V CC TTL PECL 3. MARKING DIAGRAMS* ORDERING INFORMATION PIN DESCRIPTION HLT20 ALYW KLT20 ALYW
The MC0ELT/00ELT20 is a TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only +5 V and ground are required. The small outline -lead package and the single gate of the ELT20
MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase
MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS
MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power
GENERAL PURPOSE TRANSISTOR ARRAY
The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. Guaranteed BaseEmitter Voltage Matching Operating Current Range Specified: 10 µa to 10 ma Five General
NPN Silicon. MAXIMUM RATINGS MARKING DIAGRAMS. THERMAL CHARACTERISTICS (Note 1.) ORDERING INFORMATION
is a Preferred Device NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 40 Vdc CollectorBase Voltage VCBO 60 Vdc EmitterBase Voltage VEBO 6.0 Vdc Collector Current Continuous
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION
The SN74LS298 is a Quad 2-Port Register. It is the logical equivalent of a quad 2-input multiplexer followed by a quad 4-bit edge-triggered register. A Common Select input selects between two 4-bit input
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. Preferred Device Small Signal MOSFET 500 ma, 60 Volts N Channel Features
查询 mc1723 供应商捷多邦, 专业 PCB 打样工厂,24 小时加急出货 12V CC V C. 15k. 10 V O 13 Compensation. Current. Limit. 2 Current. Sense. Inverting Input
Motorola, Inc. 199 Rev 查询 mc 供应商捷多邦, 专业 PCB 打样工厂, 小时加急出货 Order this document by MCC/D The MCC is a positive or negative voltage regulator designed to deliver load current to 1 madc. Output current capability
MARKING DIAGRAMS 16 MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 1.) ORDERING INFORMATION PDIP 16 P SUFFIX CASE 648
查询 CD4553 供应商 The MC14553B 3 digit BCD counter coists of 3 negative edge triggered BCD counters that are cascaded synchronously. A quad latch at the output of each counter permits storage of any given
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
I E I EM 24 P D
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. It is particularly
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns
BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single