Silicon Bidirectional Thyristors
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- Evangeline Copeland
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1 Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to 800 Volts On-State Current Rating of.0 Amperes RMS at 00 C Uniform Gate Trigger Currents in Three Modes High Immunity to dv/dt 500 V/µs minimum at 5 C Minimizes Snubber Networks for Protection High Surge Current Capability 0 Amperes Industry Standard TO-0AB Package High Commutating di/dt 6.0 A/ms minimum at 5 C Operational in Three Quadrants: Q, Q, and Q Device Marking: Logo, Device Type, e.g., MACM, Date Code TRIACS AMPERES RMS 600 thru 800 VOLTS MT G MAXIMUM RATINGS (TJ = 5 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage() (TJ = 0 to 5 C, Sine Wave, 50 to 60 Hz, Gate Open) MACM MACN On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 00 C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TJ = 5 C) Circuit Fusing Consideration (t = 8. ms) Peak Gate Power (Pulse Width.0 µs, TC = 00 C) Average Gate Power (t = 8. ms, TC = 00 C) VDRM, VRRM Volts IT(RMS).0 Amps ITSM 0 Amps It 6.6 Asec PGM Watt PG(AV) 0. Watt Operating Junction Temperature Range TJ 0 to +5 Storage Temperature Range Tstg 0 to +50 () VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. C C ORDERING INFORMATION Device Package Shipping MACM TO0AB 50 Units/Rail MACN TO 0AB CASE A STYLE TO0AB PIN ASSIGNMENT Main Terminal Main Terminal Gate Main Terminal 50 Units/Rail Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 999 February, 000 Rev. Publication Order Number: MACM/D
2 MACM, MACN THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Characteristic Symbol Value Unit Maximum Lead Temperature for Soldering Purposes /8 from Case for 0 Seconds TL 60 C RθJC RθJA. 6.5 C/W ELECTRICAL CHARACTERISTICS (TJ = 5 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 5 C TJ = 5 C ON CHARACTERISTICS Peak On-State Voltage() (ITM = ±6.0 A) IDRM, IRRM VTM..6 V ma Gate Trigger Current (Continuous dc) (VD = V, RL = 00 Ω) MT(+), G(+) MT(+), G( ) MT( ), G( ) Holding Current (VD = V, Gate Open, Initiating Current = ±00 ma) Latching Current (VD = V, IG = 5 ma) MT(+), G(+) MT(+), G( ) MT( ), G( ) Gate Trigger Voltage (Continuous dc) (VD = V, RL = 00 Ω) MT(+), G(+) MT(+), G( ) MT( ), G( ) DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (VD = 00 V, ITM =.0 A, Commutating dv/dt = 8 V/µs, Gate Open, TJ = 5 C, f = 50 Hz, CL = 5.0 µf, LL = 0 mh, No Snubber) Critical Rate of Rise of Off-State Voltage (VD = 0.67 x Rated VDRM, Exponential Waveform, Gate Open, TJ = 5 C) Repetitive Critical Rate of Rise of On-State Current IPK = 50 A; PW = 0 µsec; dig/dt = 00 ma/µsec; f = 60 Hz () Pulse Test: Pulse Width.0 ms, Duty Cycle %. IGT ma IH ma IL VGT ma (di/dt)c A/ms dv/dt V/µs di/dt 0 A/µs V
3 MACM, MACN Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol VDRM IDRM VRRM IRRM Parameter Peak Repetitive Forward Off State Voltage Peak Forward Blocking Current Peak Repetitive Reverse Off State Voltage Peak Reverse Blocking Current IRRM at VRRM on state IH VTM Quadrant MainTerminal + VTM IH Maximum On State Voltage Holding Current IH off state + Voltage IDRM at VDRM Quadrant MainTerminal V TM Quadrant Definitions for a Triac MT POSITIVE (Positive Half Cycle) + (+) MT (+) MT Quadrant II ( ) IGT GATE (+) IGT GATE Quadrant I REF REF IGT + IGT ( ) MT ( ) MT Quadrant III ( ) IGT GATE (+) IGT GATE Quadrant IV REF REF MT NEGATIVE (Negative Half Cycle) All polarities are referenced to. With in phase signals (using standard AC lines) quadrants I and III are used.
4 MACM, MACN IGT, GATE TRIGGER CURRENT (ma) 00 0 Q Q Q TJ, JUNCTION TEMPERATURE ( C) Figure. Typical Gate Trigger Current versus Junction Temperature VGT, GATE TRIGGER VOLTAGE (VOLTS) Q Q Q TJ, JUNCTION TEMPERATURE ( C) Figure. Typical Gate Trigger Voltage versus Junction Temperature, LATCHING CURRENT (ma) 00 0 Q Q Q I H, HOLDING CURRENT (ma) 00 0 MT Positive MT Negative IL TJ, JUNCTION TEMPERATURE ( C) TJ, JUNCTION TEMPERATURE ( C) Figure. Typical Latching Current versus Junction Temperature Figure. Typical Holding Current versus Junction Temperature TC, CASE TEMPERATURE ( C) IT(RMS), RMS ON-STATE CURRENT (AMPS).5 0 DC P(AV), AVERAGE POWER DISSIPATION (WATTS) IT(AV), AVERAGE ON-STATE CURRENT (AMPS).5 DC 0 Figure 5. Typical RMS Current Derating Figure 6. On-State Power Dissipation
5 MACM, MACN IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 00 0 TJ = 5 C TJ = 5 C TJ = 5 C r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (ms) Figure 8. Typical Thermal Response VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 7. Typical On-State Characteristics 5
6 MACM, MACN PACKAGE DIMENSIONS TO 0AB CASE A 09 ISSUE Z H Q Z L V G N D A K T U S R J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V Z STYLE : PIN. MAIN TERMINAL. MAIN TERMINAL. GATE. MAIN TERMINAL 6
7 MACM, MACN Notes 7
8 MACM, MACN ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 56, Denver, Colorado 807 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+) (M F :00pm to 5:00pm Munich Time) ONlit german@hibbertco.com French Phone: (+) (M F :00pm to 5:00pm Toulouse Time) ONlit french@hibbertco.com English Phone: (+) (M F :00pm to 5:00pm UK Time) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, England, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to :00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan 859 Phone: r55@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 MACM/D
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MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed
NYE08-10B6TG. Protected TRIAC
NYE8-B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive
MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in
Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation
NPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
MBRD835LT4G. SWITCHMODE Power Rectifier. DPAK Surface Mount Package SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS
MBRD8L Preferred Device SWITCHMODE Power Rectifier Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use
Unidirectional*
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
AN1404/D. ECLinPS Circuit Performance at Non-Standard V IH Levels APPLICATION NOTE
ECLinPS Circuit Performance at Non-Standard V IH Levels Prepared by Todd Pearson ECL Applications Engineering APPLICATION NOTE This application note explains the consequences of driving an ECLinPS device
MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction
C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light,
BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
ORDERING INFORMATION MAXIMUM RATINGS AXIAL LEAD CASE 41A PLASTIC MPTE 1N 63xx YYWW ICTE YYWW
Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener
LOGIC DIAGRAM AND PINOUT ASSIGNMENT V CC TTL PECL 3. MARKING DIAGRAMS* ORDERING INFORMATION PIN DESCRIPTION HLT20 ALYW KLT20 ALYW
The MC0ELT/00ELT20 is a TTL to differential PECL translator. Because PECL (Positive ECL) levels are used, only +5 V and ground are required. The small outline -lead package and the single gate of the ELT20
N Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate Source Voltage VGS 25 Vdc Gate Current IG 10 madc Total Device Dissipation
MMBFJ309. N Channel MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
N Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total
Unidirectional* PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS VOLTS 400 WATTS PEAK POWER
Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance
4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
MMT05B230T3, MMT05B260T3, MMT05B310T3. Thyristor Surge Protectors. High Voltage Bidirectional TSPD ( )
,, Preferred Devices Thyristor Surge Protectors High oltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
1 kv SWITCHMODE Series
1 kv SWITCHMODE Series These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE
PERIPHERAL DRIVER ARRAYS
The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage
MBRA320T3G Surface Mount Schottky Power Rectifier
Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction
LOW DROPOUT DUAL VOLTAGE REGULATOR
The LM293 is a dual positive.0 low dropout voltage regulator, designed for standby power systems. The main output is capable of supplying 70 ma for microprocessor power, and can be turned on and off by
MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers
MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G, SUR8820G, SUR8840G. Switch-mode Power Rectifiers
MUR85G, MUR8G, MUR815G, MUR82G, MUR84G, MUR86G, MURF86G, SUR882G, SUR884G Switch-mode Power Rectifiers This series is designed for use in switching power supplies, inverters and as free wheeling diodes.
Ultrafast E Series with High Reverse Energy Capability
Ultrafast E Series with High Reverse Energy Capability... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: