POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Symbol MJE18204 MJF18204 Unit

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1 The MJE/MJF18204 have an application specific state of the art die dedicated to the electronic ballast ( light ballast ) and power supply applications. Improved Global Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h FE Fast Switching No Coil Required in Base Circuit for Fast Turn Off (No Current Tail) Full Characterization at 125C ON Semiconductor 6 SIGMA Philosophy Provides Tight and Reproducible Parametric Distributions Two Package Choices: Standard TO 220 or Isolated TO 220 MAXIMUM RATINGS Rating SymbolÎ MJE18204Î MJF18204 Unit Collector Emitter Voltage V CEO ÎÎ 600 Vdc Collector Base Voltage V CBO ÎÎ 1200 Vdc Collector Emitter Voltage V CES ÎÎ 1200 Vdc Emitter Base Voltage V EBO ÎÎ 10 Vdc Collector Current Continuous Peak (1) I C ÎÎ 5 I CM 10 Î Adc Base Current Continuous I B 2 Peak (1) I BM Î Adc 4 RMS Isolation Voltage (2) Per Figure 22 V (for 1 sec, R.H. 30%) Per Figure 23 ISOL Volts V ISOL2 Î Î 3500 T C = 25 C Per Figure 24 V ISOL Î Î *Total Device T C = 25 C P DÎ 75 Î 35 Watt *Derate above 25C W/C Operating and Storage Temperature T J, T stg 65 to 150 C THERMAL CHARACTERISTICS Rating Symbol MJE18204 MJF18204 Unit Î Thermal Resistance Junction to Case Junction to Ambient R θjc R θja Î 62.5Î C/W Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds ÎÎ T L 260 Î C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. POWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS CASE 221A 09 TO 220AB CASE 221D 02 TO 220 FULLPACK Semiconductor Components Industries, LLC, 2001 April, 2001 Rev. 2 1 Publication Order Number: MJE18204/D

2 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Î Î Typ Max Unit OFF CHARACTERISTICS Î Collector Emitter Voltage V CEO Î Î (I C = 1 ma, I B = 0) ÎÎ Î Î Î Vdc Î Collector Emitter Sustaining Voltage (I Î C = 100 ma, L = 25 mh) V (I C = 200 ma, L = 25 mh, R = 2 Ω) CEO(sus) V CER(sus) Î 700 Î Vdc Î Collector Base Breakdown Voltage V CBO 1200Î 1300 Î Vdc (I CBO = 1 ma, I E = 0) Î Emitter Base Breakdown Voltage V Î (I EBO = 1 ma, I C = 0) EBO Î Î Vdc Collector Cutoff Current (V CE = 600 V, I B = T C = 25 C I CEO Collector Cutoff Current (V CE = 550 V, I B = T C = 125 CÎÎ Î Î Î 200 µadc Î 2000 Collector Cutoff Current (V CE = Rated V CES, V BE = T C = 25 C T C CES = 125 C Collector Cutoff Current (V CE = 1000 V, V BE = T C = 125 CÎÎ Î Î Î 100 µadc Î Î Collector Cutoff Current I CBO Î 100 µadc (V CB = Rated V CB, I E = 0) Emitter Cutoff Current I Î (V EB = 10 Vdc, I C = 0) EBO Î Î Î 100 Î µadc ON CHARACTERISTICS Base Emitter Saturation Voltage V Î (I C = 1 Adc, I B = 0.1 Adc) BE(sat) Vdc Î 0.83 Î 1.1 Î (I C = 2 Adc, I B = 0.4 Adc) 0.92 Î 1.25 Collector Emitter Saturation Voltage V CE(sat) (I C = 1 Adc, I B = 0.1 T C = 25 T C = 125 CÎÎ Î Î Vdc Î Î 1.25 (I C = 2 Adc, I B = 0.4 T C T Î C = 125 C Î 0.3 Î Î Î DC Current Gain h (I C = 0.5 Adc, V CE = 3 T C FE = 25 C T C = 125 CÎÎ 18Î Î 35 Î 23 Î (I C = 1 Adc, V CE = 1 T C T Î C = 125 C 10 Î Î 22 8 Î 13 Î (I C = 2 Adc, V CE = 1 T C = 25 C ÎÎ 5 Î 8 T C = 125 C 4 6 (I C = 5 madc, V CE = 5 T C T C = 125 C 10Î Î Î Î DYNAMIC CHARACTERISTICS f Current Gain Bandwidth (I C = 0.5 Adc, V CE = 10 Vdc, f = 1 MHz) T Î 13 Î MHz C Output Capacitance (V CB = 10 Vdc, I E = 0, f = 1 MHz) ob Î 200 pf C Input Capacitance (V Î EB = 8 Vdc) ib Î Î Î 2000 Î pf DYNAMIC SATURATION VOLTAGE Dynamic Saturation I C = 2 3 µs T C = 25 C V CE(dsat) Î 2.5 Î Î Î V Voltage: I B1 = 660 madc Determined 1 µs and V CC = 300 T C = 125 C µs respectively after rising I B1 I C = 2 Adc 3 T C = 25 C 7 Î =04Adc reaches 90% of final I B1 0.4 V CC = 300 T C = 125 C 15 Î I B1 2

3 ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) continued Characteristic Symbol Min Î Î Typ Max Unit SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 µs) Turn on Time I C = 2 Adc, I B1 = 0.4 T C = 25 C t on Î 105 Î 175 ns I B2 = 1 Adc Turn off Time V CC = 300 T C = 25 C t off Î Î µs Turn on Time I C = 2 Adc, I B1 = 0.4 T C = 25 C t on Î Î ns I B2 =04Adc 0.4 Î Î Turn off Time V CC = 300 T C = 25 C t off µs Î Turn on Time t d ns I C = 0.7 Adc, I B1 = 50 C = 25 C Î t r ns I B2 = 0.4 Adc Turn off Time V CC = 125 Vdc t s µs C = 25 C Î t f ns SWITCHING CHARACTERISTICS: Inductive Load (V clamp = 300 V, V CC = 15 V, L = 200 µh) Fall Time T C = 25 C t f Î Î Î Î T C = 125 C Storage Time I C = 1 T C = 25 C t s I B1 = 0.1 T C = 125 CÎÎ Î 1.35 Î 2 Î 1.9 Î µs I B2 = 0.5 Adc Crossover Time T C = 25 C t c 150 Î 250 T C = 125 C 115 Fall Time T C = T C = 125 C f Î Î Î Î ns Storage Time I C = 2 T C = t s I B1 = 0.4 T C = 125 CÎÎ Î 1.9 Î 2.75 Î 2.35 Î µs I B2 = 1 Adc Crossover Time T C = t c 190 Î 300 T C = 125 C 180 Î Fall T C = 25 C t f ns I C = 2 Adc Storage Time I B1 = 0.4 T C = 25 C t s 4 5 µs Î Crossover Time I B2 = 0.4 T C = 25 C t c ns 3

4 TYPICAL STATIC CHARACTERISTICS Figure 1. DC Current 1 Volt Figure 2. DC Current 3 Volts Figure 3. DC Current 5 Volts Figure 4. Collector Saturation Region Figure 5. Collector Emitter Saturation Voltage Figure 6. Base Emitter Saturation Region 4

5 TYPICAL STATIC CHARACTERISTICS µ Figure 7. Capacitance Figure 8. Resistive Switching, t on µ µ µ Figure 9. Resistive Switching, t off Figure 10. Inductive Storage Time, t si µ µ µ Figure 11. Inductive Storage Time, t si (h FE ) Figure 12. Inductive Switching, t c and t I C /I B = 5 5

6 TYPICAL STATIC CHARACTERISTICS µ µ Figure 13. Inductive Switching, t c and t I C /I B = 10 Figure 14. Inductive Fall Time µ Ω Figure 15. Inductive Crossover Time Figure 16. BVCER = f (R BE ) µ µ Figure 17. Forward Bias Safe Operating Area Figure 18. Reverse Bias Switching Safe Operating Area 6

7 TYPICAL STATIC CHARACTERISTICS Figure 19. Forward Bias Power Derating There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 19 is based on T C = 25 C; T J (pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 16 may be found at any case temperature by using the appropriate curve on Figure 18. T J (pk) may be calculated from the data in Figures 21 and 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 17). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL SWITCHING CHARACTERISTICS (I B1 = I B2 FOR ALL CURVES) µ µ µ µ Figure 20. Dynamic Saturation Voltage Measurements Figure 21. Inductive Switching Measurements 7

8 TYPICAL SWITCHING CHARACTERISTICS (I B1 = I B2 FOR ALL CURVES) Table 1. Inductive Load Switching Drive Circuit µ Ω Ω µ Ω µ Ω µ µ µ 8

9 TYPICAL THERMAL RESPONSE (I B1 = I B2 FOR ALL CURVES) θ θ θ θ Figure 22. Typical Thermal Response (Z θjc (t)) for MJE18204 θ θ θ θ Figure 23. Typical Thermal Response (Z θjc (t)) for MJF

10 TEST CONDITIONS FOR ISOLATION TESTS* Figure 24. Screw or Clip Mounting Position for Isolation Test Number 1 Figure 25. Clip Mounting Position for Isolation Test Number 2 Figure 26. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** Figure 27a. Screw Mounted Figure 27b. Clip Mounted Figure 27. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in. lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4 40 screw, without washers, and applying a torque in excess of 20 in. lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4 40 screws indicate that the screw slot fails between 15 to 20 in. lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in. lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN

11 PACKAGE DIMENSIONS TO 220AB CASE 221A 09 ISSUE AA H Q Z L V G B N D A K F T U S R J C T 11

12 PACKAGE DIMENSIONS CASE 221D 02 (ISOLATED TO 220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D A K F Q H B G N L D 3 PL Y C U T S J R SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:30pm to 7:00pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:00pm to 7:00pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 12 MJE18204/D