Watts T. W/ C Operating and Storage Junction. T J, T stg
|
|
- Derick Simpson
- 6 years ago
- Views:
Transcription
1 The BUS98 and BUS98A transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE applications such as: Switching Regulators Inverters Solenoid and Relay Drivers Motor Controls Deflection Circuits Fast Turn Off Times 60 ns Inductive Fall Time 25C (Typ) 120 ns Inductive Crossover Time 25C (Typ) Operating Temperature Range 65 to +200C 100C Performance Specified for: Reverse Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Currents (125C) MAXIMUM RATINGS Rating Symbol BUS98 BUS98A Î Unit Collector Emitter Voltage V CEO(sus) Î Vdc Collector Emitter Voltage V CEV Î Vdc Emitter Base Voltage V EB 7 Î Vdc Collector Current Continuous I C 30 Î Adc Peak (1) I Overload CM 60 I oi 120 Î Base Current Continuous I B 10 Î Adc Peak (1) I BM 30 Î Total Power Dissipation T C = 25C P D 250 Î Watts T C = 100C 142 Derate above 25C ÎÎ 1.42 Î W/C Operating and Storage Junction T J, T stg 65 to +200 Î C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Î Unit Thermal Resistance, R θjc 0.7 Î C/W Junction to Case Maximum Lead Temperature T L 275 for Soldering Purposes: Î C Î 1/8 from Case for 5 Seconds 30 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS (BVCEO) 250 WATTS V (BVCES) CASE 1 07 TO 204AA (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. Designer s and SWITCHMODE are trademarks of ON Semiconductor, Inc. Semiconductor Components Industries, LLC, 2001 March, 2001 Rev. 9 1 Publication Order Number: BUS98/D
2 ELECTRICAL CHARACTERISTICS (T C = 25C unless otherwise noted) Î Characteristic Symbol Î Min Typ Î Max Unit OFF CHARACTERISTICS (1) Î Collector Emitter Sustaining Voltage (Table 1) V CEO(sus) Î (I C = 200 ma, I B = 0) L = 25 mh BUS98 ÎÎ 400 Î Vdc BUS98A 450 Collector Cutoff Current I Î (V CEV = Rated Value, V BE(off) = 1.5 Vdc) CEV madc Î (V CEV = Rated Value, V BE(off) = 1.5 Vdc, T C = 125C) ÎÎ 0.4 Î 4.0 Î Collector Cutoff Current I CER madc (V Î CE = Rated V CEV, R BE = 10 Ω) T C = 25 C T C ÎÎ 1.0 = 125 C 6.0 Î Emitter Cutoff Current I Î (V EB = 7 Vdc, I C = 0) EBO Î 0.2 madc Î Emitter Base Breakdown Voltage 7.0 Vdc Î (I E = 100 ma I C = 0) SECOND BREAKDOWN Î Second Breakdown Collector Current with Base Forward Biased I S/b See Figure 12 Î Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 13 ON CHARACTERISTICS (1) Î DC Current Gain h FE Î 8 Î (I Î C = 20 Adc, V CE = 5 Vdc) BUS98 (I C = 16 Adc, V CE = 5 V) BUS98A Î Collector Emitter Saturation Voltage V CE(sat) Vdc Î (I C = 20 Adc, I B = 4 Adc) BUS98 ÎÎ Î 1.5 (I Î C = 30 Adc, I B = 8 Adc) 3.5 (I C = 20 Adc, I B = 4 Adc, T C = 100C) ÎÎ Î 2.0 (I Î C = 16 Adc, I B = 3.2 Adc) BUS98A (I C = 24 Adc, I B ÎÎ 1.5 = 5 Adc) 5.0 Î (I C = 16 Adc, I B = 3.2 Adc, T C = 100C) ÎÎ Î 2.0 Î Base Emitter Saturation Voltage V BE(sat) Vdc Î (I C = 20 Adc, I B = 4 Adc) BUS98 ÎÎ Î 1.6 (I Î C = 20 Adc, I B = 4 Adc, T C = 100C) 1.6 (I C = 16 Adc, I B = 3.2 Adc) BUS98A ÎÎ Î 1.6 Î (I C = 16 Adc, I B = 3.2 Adc, T C = 100C) ÎÎ Î 1.6 DYNAMIC CHARACTERISTICS Î Output Capacitance C ob Î Î 700 pf (V CB = 10 Vdc, I E = 0, f test = 100 khz) SWITCHING CHARACTERISTICS Restive Load (Table 1) Delay Time t d Î 0.1 Î 0.2 µs (V Rise Time ÎÎ CC = 250 Vdc, I C = 20 A, t r Î 0.4 Î 0.7 I B1 = 4.0 A, t p = 30 µs, Storage Time ÎÎ Duty Cycle 2%, V BE(off) = 5 V) t s Î 1.55 Î 2.3 (for BUS98A: I =16A =32A) Fall Time ÎÎ C A, Ib t f Î 0.2 Î 0.4 Inductive Load, Clamped (Table 1) Storage Time Î ÎÎ 1.55 Î µs V EBO I C(pk) = 20 A (BUS98) t sv I b1 = 4 A (T =25C) C t V fi BE(off) = 5 V, V CE(c1) = 250 V) t sv I C(pk) = 16 A (BUS98A (T C = 100C) t ) c lb 1 = 3.2 A) tfi Fall Time Î Î 0.06 Î Storage Time Î Î 1.8 Î 2.8 Crossover TimeÎ( C ) Î 0.3 Î 0.6 Fall Time ÎÎ Î 0.17 Î 0.35 (1) Pulse Test: PW = 300 µs, Duty Cycle 2%. 2
3 DC CHARACTERISTICS Figure 1. DC Current Gain Figure 2. Collector Saturation Region β β Figure 3. Collector Emitter Saturation Voltage Figure 4. Base Emitter Voltage µ Figure 5. Collector Cutoff Region Figure 6. Capacitance 3
4 Table 1. Test Conditions for Dynamic Performance V CEO(sus) RBSOA AND INDUCTIVE SWITCHING RESISTIVE SWITCHING INPUT CONDITIONS PW Varied to Attain I C = 100 ma µ µ µ µ TURN ON TIME I B1 adjusted to obtain the forced h FE desired TURN OFF TIME Use inductive switching driver as the input to the resistive test circuit. CIRCUIT VALUES L coil = 25 mh, V CC = 10 V R coil = 0.7 Ω L coil = 180 µh R coil = 0.05 Ω V CC = 20 V V clamp = 250 V V CC = 250 V Pulse Width = 10 µs TEST CIRCUITS INDUCTIVE TEST CIRCUIT OUTPUT WAVEFORMS t 1 Adjusted to Obtain I C t1 L coil (IC(pk)) VCC t2 L coil (IC(pk)) Vclamp Test Equipment Scope Tektronix 475 or Equivalent RESISTIVE TEST CIRCUIT β Figure 7. Inductive Switching Measurements Figure 8. Peak Reverse Current 4
5 SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase. However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each waveform to determine the total switching time. For this reason, the following new terms have been defined. t sv = Voltage Storage Time, 90% I B1 to 10% V clamp t rv = Voltage Rise Time, 10 90% V clamp t fi = Current Fall Time, 90 10% I C t ti = Current Tail, 10 2% I C t c = Crossover Time, 10% V clamp to 10% I C An enlarged portion of the inductive switching waveforms is shown in Figure 7 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN 222: P SWT = 1/2 V CC I C (t c ) f In general, t rv + t fi t c. However, at lower test currents this relationship may not be valid. As is common with most switching transistors, resistive switching is specified at 25C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a SWITCHMODE transistor are the inductive switching speeds (t c and t sv ) which are guaranteed at 100C.INDUCTIVE SWITCHING µ µ β Figure 9. Storage Time, t sv β Figure 10. Crossover and Fall Times β µ µ β Figure 11. Turn Off Times versus Forced Gain Figure 12. Turn Off TM Times versus Ib 2 /Ib 1 5
6 The Safe Operating Area figures shown in Figures 12 and 13 are specified for these devices under the test conditions shown. Figure 13. Forward Bias Safe Operating Area µ Figure 14. Reverse Bias Safe Operating Area SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 13 is based on T C = 25C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 13 may be found at any case temperature by using the appropriate curve on Figure 15. T J(pk) may be calculated from the data in Figure 11. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage current conditions during reverse biased turn off. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 14 gives RBSOA characteristics. Figure 15. Power Derating 6
7 θ θ θ θ Figure 16. Thermal Response OVERLOAD CHARACTERISTICS µ Figure 17. Rated Overload Safe Operating Area (OLSOA) OLSOA OLSOA applies when maximum collector current is limited and known. A good example Is a circuit where an inductor is inserted between the transistor and the bus, which limits the rate of rise of collector current to a known value. If the transistor is then turned off within a specified amount of time, the magnitude of collector current is also known. Maximum allowable collector emitter voltage versus collector current is plotted for several pulse widths. (Pulse width is defined as the time lag between the fault condition and the removal of base drive.) Storage time of the transistor has been factored into the curve. Therefore, with bus voltage and maximum collector current known, Figure 17 defines the maximum time which can be allowed for fault detection and shutdown of base drive. OLSOA is measured in a common base circuit (Figure 19) which allows precise definition of collector emitter voltage and collector current. This is the same circuit that is used to measure forward bias safe operating area. Ω Ω Ω µ Notes: V CE = V CC + V BE Adjust pulsed current source for desired I C, t p µ Figure 18. Figure 17. I C = f (dv/dt) Figure 19. Overload SOA Test Circuit 7
8 PACKAGE DIMENSIONS TO 204AA (TO 3) CASE 1 07 ISSUE Z V H E 2 1 A N U C D 2 PL K L G Q T Y B SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+1) (Mon Fri 2:30pm to 7:00pm CET) ONlit german@hibbertco.com French Phone: (+1) (Mon Fri 2:00pm to 7:00pm CET) ONlit french@hibbertco.com English Phone: (+1) (Mon Fri 12:00pm to 5:00pm GMT) ONlit@hibbertco.com EUROPEAN TOLL FREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (Mon Fri 8:00am to 5:00pm MST) ONlit spanish@hibbertco.com Toll Free from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (Tue Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlit asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 8 BUS98/D
MJ10015 MJ AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
The MJ10015 and MJ10016 Darlington transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated
More information2N3055A MJ AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
More information25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS
... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage V CE(sat) = 1.0 Vdc, (max) at I C = 15 Adc Low Leakage Current I CEX = 1.0 madc (max)
More informationI E I EM 24 P D
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE13007 is designed for high voltage, high speed power switching inductive circuits where fall time is critical. It is particularly
More information50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1.
... designed for use in high power amplifier and switching circuit applications. High Current Capability I C Continuous = 50 Amperes. DC Current Gain h FE = 15 60 @ I C = 25 Adc Low Collector Emitter Saturation
More information1 kv SWITCHMODE Series
1 kv SWITCHMODE Series These transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated SWITCHMODE
More informationTIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc V CEO(sus) = 60 Vdc
More information2N3771, 2N and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS 150 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for linear amplifiers, series pass regulators, and inductive switching applications. Forward Biased Second Breakdown Current Capability I S/b = 3.75 Adc @ V CE = 40 2N3771 = 2.5 Adc @ V CE
More informationDARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage
...designed for general purpose and low speed switching applications. High DC Current Gain h FE = 2500 (typ.) at I C = 4.0 Collector Emitter Sustaining Voltage at 100 madc V CEO(sus) = 80 Vdc (min.) BDX33B,
More information30 AMPERE POWER TRANSISTOR NPN SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Temperature Derating Curve
... for use as an output device in complementary audio amplifiers to 100 Watts music power per channel. High DC Current Gain h FE = 25 100 @ I C = 7.5 A Excellent Safe Operating Area Complement to the
More information30 AMPERE POWER TRANSISTOR PNP SILICON 100 VOLTS 200 WATTS MAXIMUM RATINGS MAXIMUM RATINGS. Figure 1. Power Temperature Derating Curve
... for use as an output device in complementary audio amplifiers to 100 Watts music power per channel. High DC Current Gain h FE = 25 100 @ I C = 7.5 A Excellent Safe Operating Area Complement to the
More informationPOWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Symbol MJE18204 MJF18204 Unit
The MJE/MJF18204 have an application specific state of the art die dedicated to the electronic ballast ( light ballast ) and power supply applications. Improved Global Efficiency Due to Low Base Drive
More informationMJ16110 MJW SWITCHMODE Bridge Series
SWITCHMODE Bridge Series... specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBSOA Capability Collector Emitter Sustaining
More informationP D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector
More informationBC546, B BC547, A, B, C BC548, A, B, C
NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 Unit Collector Emitter oltage CEO 65 45 30 dc Collector Base oltage CBO 80 50 30 dc Emitter Base oltage EBO 6.0 dc Collector Current Continuous I C
More information10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
More informationULTRAFAST RECTIFIERS 8.0 AMPERES VOLTS
Preferred Devices... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features: Ultrafast 25, 50 and 75 Nanosecond
More informationMJE5740G, MJE5742G. NPN Silicon Power Darlington Transistors POWER DARLINGTON TRANSISTORS 8 AMPERES VOLTS 80 WATTS
NPN Silicon Power Darlington Transistors The MJE74G and MJE74G Darlington transistors are designed for highvoltage power switching in inductive circuits. Features These Devices are PbFree and are RoHS
More informationDPAK Surface Mount Package
MBRD620CT, MBRD640CT and MBRD660CT are Preferred Devices DPAK Surface Mount Package...in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following
More informationMJE AMPERES NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS
These devices are designed for highvoltage, highspeed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching
More informationN Channel Depletion MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS ON CHARACTERISTICS
N Channel Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Drain Gate Voltage V DG 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc Total Device Dissipation
More informationMC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT
The MC34064 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution for low voltage detection
More informationMJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
More informationPNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
More informationPOWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
The BUH50 has an application specific state of art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications. This high voltage/high speed transistor exhibits the following
More informationTMOS E FET. Power Field Effect Transistor MTP8N50E. N Channel Enhancement Mode Silicon Gate
TMOS E FET. Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate MTP8N5E This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without
More informationPOWER DARLINGTON TRANSISTORS 8 AMPERES 300, 400 VOLTS 80 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
The MJE5740 and MJE5742 Darlington transistors are designed for highvoltage power switching in inductive circuits. They are particularly suited for operation in applications such as: Small Engine Ignition
More informationMJE18008 MJF NPN Bipolar Power Transistor For Switching Power Supply Applications
NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state of the art die designed for use in 220 V line operated Switchmode Power supplies
More information1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
More informationPERIPHERAL DRIVER ARRAYS
The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage
More information2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other
More information1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, VOLTS 30 WATTS
... designed for use in general purpose amplifier and switching applications. Compact TO220 AB package. ÎÎ MAXIMUM RATINGS TIP29 TIP29A TIP29B TIP29C Rating Symbol 9 Î TIP30 TIP30A TIP30B TIP30C Unit CollectorEmitter
More information4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 15 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Figure 1. Power Derating BD787
... designed for lower power audio amplifier and low current, high speed switching applications. Low Collector Emitter Sustaining Voltage VCEO(sus) 60 Vdc (Min) BD787, BD788 High Current Gain Bandwidth
More information500 mw SOD 123 Surface Mount
500 mw SOD 123 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 123 package. These devices provide a convenient alternative to the leadless 34
More information2N5194 2N for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192
... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
More informationTIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors
TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter
More informationMJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
More informationReverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
More informationMBRB20200CT. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES 200 VOLTS
Preferred Device Dual Schottky Rectifier... using Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency switching power supplies
More informationBDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors
BDW42 NPN,, BDW47 PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed
More informationTIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
More information100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
More informationAdc. W W/ C T J, T stg 65 to C
Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =
More informationTIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features 25 V to V (Min) V
More informationMJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
More informationGENERAL PURPOSE TRANSISTOR ARRAY
The MC3346 is designed for general purpose, low power applications for consumer and industrial designs. Guaranteed BaseEmitter Voltage Matching Operating Current Range Specified: 10 µa to 10 ma Five General
More informationMJE18002G SWITCHMODE. NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 2.0 AMPERES 100 VOLTS 50 WATTS
MJE82G SWITCHMODE NPN Bipolar Power Traistor For Switching Power Supply Applicatio The MJE82G have an applicatio specific stateoftheart die designed for use in 22 V line operated Switchmode Power supplies
More informationMJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMARKING DIAGRAMS MAXIMUM RATINGS (Voltages Referenced to V SS ) (Note 1.) ORDERING INFORMATION PDIP 14 P SUFFIX CASE 646
The MC14106B hex Schmitt Trigger is constructed with MOS P channel and N channel enhancement mode devices in a single monolithic structure. These devices find primary use where low power dissipation and/or
More informationTIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
More informationMPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc
More information2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W
Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage
More information2N3771, 2N3772. High Power NPN Silicon Power Transistors. 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON 40 and 60 VOLTS, 150 WATTS
2N3771 is a Preferred Device High Power NPN Silicon Power Transistors These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features Forward Biased
More informationMJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar
More informationMARKING DIAGRAMS PIN CONNECTIONS ORDERING INFORMATION MC3x58P1 AWL YYWW PDIP 8 P1 SUFFIX CASE 626 SO 8 D SUFFIX CASE 751 3x58 ALYW
Utilizing the circuit designs perfected for the quad operational amplifiers, these dual operational amplifiers feature: low power drain, a common mode input voltage range extending to ground/v EE, and
More informationSilicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
More informationNPN MPS650 PNP MPS750 MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS
MAXIMUM RATINGS Rating Symbol MPS650 MPS750 MPS651 MPS751 Collector Emitter Voltage VCE 40 60 Vdc Collector Base Voltage VCB 60 80 Vdc Emitter Base Voltage VEB 5.0 Vdc Collector Current Continuous IC 2.0
More informationMPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
More informationMJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
More informationMJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear
More informationTIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors
TIP14, TIP141, TIP142, (); TIP145, TIP146, TIP147, () TIP141, TIP142, TIP146, and TIP147 are Preferred Devices Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and
More informationMJE243 - NPN, MJE253 - PNP
Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
More informationBU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS
NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed
More informationMJE18004 MJF NPN Bipolar Power Transistor For Switching Power Supply Applications
NPN Bipolar Power Traistor For Switching Power Supply Applicatio The MJE/MJF18004 have an applicatio specific state of the art die designed for use in 220 V line operated Switchmode Power supplies and
More informationMJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS
MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.
More information2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS
, Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are PbFree
More informationMJD44H11 (NPN) MJD45H11 (PNP)
MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such
More informationPIN CONNECTIONS Representative Schematic Diagram
The MC34063A Series is a monolithic control circuit containing the primary functions required for DC to DC converters. These devices consist of an internal temperature compensated reference, comparator,
More informationMMBFJ309. N Channel MAXIMUM RATINGS THERMAL CHARACTERISTICS DEVICE MARKING. ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted)
N Channel MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate Source Voltage V GS 25 Vdc Gate Current I G 10 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total
More information2N3055, MJ2955. Complementary Silicon Power Transistors 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W
N355, MJ955 Preferred Device Complementary Silicon Power Transistors...designed for generalpurpose switching and amplifier applications. DC Current Gain h FE = 7 @ I C = 4 Adc CollectorEmitter Saturation
More informationMJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS
MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationBD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS
BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current
More information2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS
Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
More informationNPN Silicon ON Semiconductor Preferred Device
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.0 Vdc Collector
More informationReverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
More informationBDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
More informationMJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W
MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More information2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors
2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain
More informationEMF5XV6T5G. Power Management, Dual Transistors. NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features Simplifies Circuit Design Reduces Board Space Reduces Component
More informationMPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc
More informationMPSA70. Amplifier Transistor. PNP Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Amplifier Transistor PNP Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Emitter Base Voltage V EBO 4. Vdc Collector Current
More informationNJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W
NJL3281D (NPN) NJL132D (PNP) Complementary ThermalTrak Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications.
More informationMPSA20. Amplifier Transistor. NPN Silicon. Pb Free Package is Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
MPSA Amplifier Transistor NPN Silicon Features Pb Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 4. Vdc Collector
More informationMJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors
MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.
More informationNJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS
NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
More informationMPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
More informationMJE18008, MJF SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications
MJE88, MJF88 Preferred Device SWITCHMODE NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF88 have an applications specific stateoftheart die designed for use in V lineoperated
More informationMJD112 (NPN) MJD117 (PNP) Complementary Darlington Power Transistors. DPAK For Surface Mount Applications
MJD (NPN) MJD7 (PNP) Preferred Device Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in
More informationNSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
More informationSEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJ/D The MJ and MJ3 Darlington transistors are designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.
More informationMJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJDH (NPN) MJD5H (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching
More informationVdc. Vdc. W W/ C T J, T stg 65 to +200 C P D
MJ141 (PNP), MJ142* (NPN), MJ143* (PNP) *Preferred Devices HighCurrent Complementary Silicon Power Transistors Designed for use in highpower amplifier and switching circuit applications. Features High
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP) Complementary Power Transistors. DPAK For Surface Mount Applications
MJD3, MJD3C (NPN), MJD3, MJD3C (PNP) Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for
More informationMJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications
MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationMJD (NPN) MJD (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W Thermal Resistance, Junction
MJD (NPN) MJD (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon For Surface Mount Applications Designed for low voltage, low power, high gain audio amplifier applications. Features Collector
More informationMJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount
More informationAPPLICATION NOTE. where Vundershoot = (Vref lower) Gnd. Hence the retrigger time is given by:
Prepared by: Douglas M. Buzard, Rodolfo E. Soto Introduction The MC74HC4538A is a monostable multivibrator commonly used as a one shot, or in applications that require a pulse width of reliable dimensions.
More informationMJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product
More informationMJE15034 NPN, MJE15035 PNP
MJE153 NPN, MJE1535 PNP Preferred Device Complementary Silicon Plastic Power Transistors TO22, NPN & PNP Devices Complementary silicon plastic power transistors are designed for use as highfrequency drivers
More informationMJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD, MJDC (NPN), MJD, MJDC (PNP) MJDC and MJDC are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications.
More information