POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
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1 The BUH50 has an application specific state of art die designed for use in 50 Watts HALOGEN electronic transformers and SWITCHMODE applications. This high voltage/high speed transistor exhibits the following main feature: Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hfe Fast Switching ON Semiconductor Six Sigma Philosophy Provides Tight and Reproductible Parametric Distributions Specified Dynamic Saturation Data Full Characterization at 125 C MAXIMUM RATINGS Rating SymbolÎ Value Unit Collector Emitter Sustaining Voltage VCEOÎ 500 Vdc Collector Base Breakdown Voltage VCBOÎ 800 Vdc Collector Emitter Breakdown Voltage VCESÎ 800 Vdc Emitter Base Voltage VEBOÎ 9 Vdc Collector Current Continuous IC Î 4 Adc Peak (1) ICM 8 Base Current Continuous Base Current Peak (1) I B 2 Adc Î IBM 4 Î *Total Device TC = 25C *Derate above 25 C Î P D 50 Watt Î 0.4 W/C Operating and Storage Temperature TJ, TstgÎ 65 to 150 C THERMAL CHARACTERISTICS Thermal Resistance Î C/W Junction to Case RθJCÎ 2.5 Junction to Ambient RθJA 62.5 Maximum Lead Temperature for Soldering Purposes: 1/8 from case for 5 seconds T L 260 C (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%. POWER TRANSISTOR 4 AMPERES 800 VOLTS 50 WATTS CASE 221A 09 TO 220AB Semiconductor Components Industries, LLC, 2002 April, 2002 Rev. 3 1 Publication Order Number: BUH50/D
2 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) ÎÎ ÎÎ Characteristic Symbol Min Typ Max Unit Î OFF CHARACTERISTICS Collector Emitter Sustaining Voltage VCEO(sus) (IC = 100 ma, L = 25 mh) 500 Vdc Collector Cutoff Current ICEO ÎÎ 100 µadc (VCE = Rated VCEO, IB = 0) Î Collector Cutoff TC = ICES (VCE = Rated VCES, VEB = TC = 125 C 100 µadc 1000 ÎÎ Emitter Cutoff Current IEBO (VEB = 9 Vdc, IC = 0) 100 µadc ÎÎ Î ON CHARACTERISTICS Base Emitter Saturation Voltage VBE(sat) Vdc (IC = 1 Adc, IB = 0.33 Adc) (IC = 2 Adc, IB = 0.66 Adc) 25 C (IC = 2 Adc, IB = 0.66 Adc) 100 C Collector Emitter Saturation Voltage Î VCE(sat) Vdc (IC = 1 Adc, IB = 0.33 TC = 25 C ÎÎ (IC = 2 Adc, IB = 0.66 Adc) TC = 25 C ÎÎ 0.32 TC = 125 C ÎÎ (IC = 3 Adc, IB = 1 Adc) TC = 25 C ÎÎ DC Current Gain (IC = 1 Adc, VCE = 5 Vdc) TC = 25 C hfe 7 13 ÎÎ Î DC Current Gain (IC = 2 Adc, VCE = 5 TC = 25 C 5 10 Î DYNAMIC CHARACTERISTICS Current Gain Bandwidth ft 4 (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) MHz Output Capacitance Cob (VCB = 10 Vdc, IE = 0, f = 1 MHz) ÎÎ pf Input Capacitance ÎÎ Cib pf (VEB = 8 Vdc) Î DYNAMIC SATURATION VOLTAGE IC = 1 A 1 TC = TC = 125 C VCE(dsat) V Dynamic Saturation =033A Voltage: IB Î Determined 1 µs and VCC = µs TC = 25 TC = 125 C V 3 µs respectively after 1 IB1 TC = 25 C ÎÎ 6 ÎÎ V reaches 90% of final IC = 2 TC = 125 C 14 =066A IB1 IB VCC = µs TC = TC = 125 C V 2
3 ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) ÎÎ ÎÎ Characteristic Symbol Min Typ Max Unit Î SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 20 µs) Turn on Time IC = 2 Adc, IB1 = 0.4 Adc TC = 25 C ÎÎ ton ns IB2 =04Adc 0.4 Î Turn off Time VCC = 125 TC = 25 C toff µs Turn on Time IC = 2 Adc, IB1 = 0.4 TC = 25 C ton ns IB2 = 1 Adc Turn off Time VCC = 125 TC = 25 C toff ÎÎ ÎÎ µs Turn on Time IC = 1 Adc, IB1 = 0.3 Î TC = 25 C ton ns IB2 = 0.3 Adc Turn off Time VCC = 125 Vdc TC = 25 C toff µs Î SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 µh) Fall TC = 25 C tf TC = 125 C 95 ÎÎ Storage Time IC = 2 TC = ts IB1 = 0.4 Adc TC = 125 C ÎÎ ÎÎ µs IB2 = 1 Adc Crossover TC = 25 C tc TC = 125 C 180 ÎÎ Fall TC = 25 C tf TC = 125 C 100 ÎÎ Storage Time IC = 2 IB1 = 0.66 Adc Î TC = 25 C ts ÎÎ ÎÎ TC = 125 C 2.5 IB2 = 1 Adc Crossover TC = 25 C TC = 125 C ÎÎ ÎÎ ns TYPICAL STATIC CHARACTERISTICS Figure 1. DC Current 1 Volt Figure 2. DC Current 5 Volt 3
4 TYPICAL STATIC CHARACTERISTICS Figure 3. Collector Saturation Region Figure 4. Collector Emitter Saturation Voltage Figure 5. Collector Emitter Saturation Voltage Figure 6. Base Emitter Saturation Region Figure 7. Base Emitter Saturation Region Figure 8. Capacitance 4
5 TYPICAL SWITCHING CHARACTERISTICS µ µ Figure 9. Resistive Switching, ton Figure 10. Resistive Switch Time, toff µ µ Figure 11. Inductive Storage Time, tsi Figure 12. Inductive Storage Time, tc & IC/IB = 3 TYPICAL CHARACTERISTICS µ µ µ Figure 13. Inductive Switching, tc & IC/IB = 5 5 Figure 14. Inductive Storage Time
6 TYPICAL CHARACTERISTICS µ µ Figure 15. Inductive Fall Time Figure 16. Inductive Crossover Time Figure 17. Forward Power Derating 6
7 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 20 is based on TC = 25 C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC > 25 C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 20 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 22. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 21). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL CHARACTERISTICS µ µ µ µ Figure 18. Dynamic Saturation Voltage Figure 19. Inductive Switching Measurements µ µ µ Figure 20. Forward Bias Safe Operating Area Figure 21. Reverse Bias Safe Operating Area 7
8 TYPICAL CHARACTERISTICS Table 1. Inductive Load Switching Drive Circuit µ Ω Ω µ Ω µ Ω µ µ µ θθ θ θ Figure 22. Typical Thermal Response (ZθJC(t)) for BUH50 8
9 PACKAGE DIMENSIONS H B Q A K Z L V G D N F T U S R J TO 220AB CASE 221A 09 ISSUE AA C T 9
10 Notes 10
11 Notes 11
12 SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com N. American Technical Support: Toll Free USA/Canada JAPAN: ON Semiconductor, Japan Customer Focus Center Nishi Gotanda, Shinagawa ku, Tokyo, Japan Phone: r14525@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 12 BUH50/D
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