SEMICONDUCTOR TECHNICAL DATA
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1 SEMICONDUCTOR TECHNICAL DATA Order this document by BULD/D The BULD is state of art High Speed High gain BIPolar transistor (HBIP). High dynamic characteristics and lot to lot minimum spread (± ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hfe window. Main features: Low Base Drive Requirement High Peak DC Current Gain ( IC = ma Extremely Low Storage Time Min/Max Guarantees Due to the HBIP Structure which Minimizes the Spread Integrated Collector Emitter Free Wheeling Diode Fully Characterized and Guaranteed Dynamic VCE(sat) 6 Sigma Process Providing Tight and Reproductible Parameter Spreads It s characteristics make it also suitable for PFC application. ÎÎ MAXIMUM RATINGS ÎÎ Rating Symbol Value Unit ÎÎ Collector Emitter Sustaining Voltage VCEO ÎÎ Collector Base Breakdown Voltage VCBO 7 ÎÎ Collector Emitter Breakdown Voltage VCES 7 ÎÎ Emitter Base Voltage VEBO ÎÎ Collector Current Continuous IC Adc ÎÎ ÎÎ Peak () ICM Base Current Continuous IB Adc Base Current Peak () IBM ÎÎ *Total Device TC = C PD 7 Watt ÎÎ *Derate above C ÎÎ.6 W/ C ÎÎ Operating and Storage Temperature TJ, Tstg 6 to C ÎÎ THERMAL CHARACTERISTICS ÎÎ Thermal Resistance C/W Junction to Case RθJC.6 ÎÎ ÎÎ Junction to Ambient RθJA 6. Maximum Lead Temperature for Soldering Purposes: TL 6 C Î /8 from case for seconds () Pulse Test: Pulse Width = ms, Duty Cycle %. Designer s and SWITCHMODE are trademarks of Motorola, Inc. POWER TRANSISTORS AMPERES 7 VOLTS 7 WATTS CASE A 6 TO AB Designer s Data for Worst Case Conditions The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Motorola, Inc. 99 Motorola Bipolar Power Transistor Device Data
2 ELECTRICAL CHARACTERISTICS (TC = C unless otherwise noted) Characteristic Symbol Min OFF CHARACTERISTICS Collector Emitter Sustaining Voltage VCEO(sus) (IC = ma, L = mh) Collector Base Breakdown Voltage VCBO (ICBO = ma) Typ Max Unit ÎÎ ÎÎ ÎÎ 7 9 Emitter Base Breakdown Voltage VEBO. ÎÎ ÎÎ (IEBO = ma) Collector Cutoff Current ICEO (VCE = Rated VCEO, IB = ) µadc Collector Cutoff Current (VCE = Rated VCES, VEB = ) TC = C ICES ÎÎ TC = C Collector Cutoff Current (VCE = V, VEB = TC = C ÎÎ Emitter Cutoff Current IEBO (VEB =, IC = ) µadc ÎÎ ON CHARACTERISTICS Base Emitter Saturation Voltage Î (IC =.8 Adc, IB = 8 TC = C VBE(sat) ÎÎ TC = C.7.9 (IC = Adc, IB =. TC = C ÎÎ.89 TC = C.79.9 Collector Emitter Saturation Voltage VCE(sat) (IC =.8 Adc, IB = 8 TC = C ÎÎ TC = C.. (IC = Adc, IB =. TC = C ÎÎ. TC = C.8.6 (IC =.8 Adc, IB = madc) TC = C.6 ÎÎ TC = C.6 DC Current Gain Î hfe ÎÎ (IC =.8 Adc, VCE = TC = TC = C 9 (IC = Adc, VCE = ) TC = TC = C 7 ÎÎ ÎÎ 9. DIODE CHARACTERISTICS Forward Diode Voltage Î VEC (IEC = TC = TC = C..7. V (IEC = Adc) TC = C. ÎÎ TC = C (IEC =. Adc) ÎÎ TC = C.8 TC = C.6 ÎÎ Forward Recovery Time (see Figure 7) Tfr (IF = Adc, di/dt = A/µs) TC = C ÎÎ ns (IF = Adc, di/dt = A/µs) TC = C ÎÎ 6 ÎÎ (IF =. Adc, di/dt = A/µs) TC = C ÎÎ ÎÎ Motorola Bipolar Power Transistor Device Data
3 ELECTRICAL CHARACTERISTICS (TC = C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ÎÎ DYNAMIC CHARACTERISTICS ÎÎ Current Gain Bandwidth ft ÎÎ ÎÎ MHz (IC =. Adc, VCE =, f = MHz) Output Capacitance Î Cob ÎÎ 7 pf (VCB =, IE =, f = MHz) Input Capacitance Î Cib Î pf ÎÎ (VEB = 8 ) DYNAMIC SATURATION Î IC = A TC = C VCE(dsat) ÎÎ.7 TC = C 9. Dynamic Saturation IB = ma Î Voltage: VCC = TC = CÎ Î Î. ÎÎ V Determined µs TC = C.7 µs respectively after rising IB TC = C.9 V IC = TC = C ÎÎ 9% of final IB IB =.8 A Î VCC = TC = TC = CÎ.. ÎÎ V SWITCHING CHARACTERISTICS: Resistive Load (D.C. %, Pulse Width = µs) Turn on TC = CÎ ton IC = Adc, IB =. Adc Î TC = C ns IB = Adc Turn off Time VCC TC = TC = CÎÎ.. µs. Turn on TC = C ton IC = Adc, IB =. Adc Î TC = C ns Turn off Time IB =. Adc Î VCC TC = CÎ toff. Î Î Î. µs TC = C. SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = V, VCC = V, L = µh) Fall TC = TC = CÎÎ 9 ns 9 Storage Time IC = Adc Î IB = TC = C ts TC = C..9 µs IB = madc Crossover TC = CÎ tc 9 TC = C 9 Fall Time TC = C tf ÎÎ 8 TC = C Storage Time IC = Adc Î Î IB =. TC = TC = CÎÎ.9 µs IB =. Adc Crossover TC = tc TC = C Motorola Bipolar Power Transistor Device Data
4 TYPICAL STATIC CHARACTERISTICS 8 VCE = V 8 VCE = V hfe, DC CURRENT GAIN 6 TJ = C hfe, DC CURRENT GAIN 6 TJ = C Figure. DC Current Volt Figure. DC Current Volt VCE, VOLTAGE (VOLTS). A A A A IC = ma.. IB, BASE CURRENT (AMPS) A VCE, VOLTAGE (VOLTS).. IC/IB = TJ = C.. Figure. Collector Saturation Region Figure. Collector Emitter Saturation Voltage IC/IB = IC/IB = VCE, VOLTAGE (VOLTS) TJ = C VCE, VOLTAGE (VOLTS) TJ = C Figure. Collector Emitter Saturation Voltage Figure 6. Collector Emitter Saturation Voltage Motorola Bipolar Power Transistor Device Data
5 TYPICAL STATIC CHARACTERISTICS IC/IB = IC/IB = VBE, VOLTAGE (VOLTS) TJ = C VBE, VOLTAGE (VOLTS) TJ = C Figure 7. Base Emitter Saturation Region Figure 8. Base Emitter Saturation Region VBE, VOLTAGE (VOLTS) IC/IB = TJ = C FORWARD DIODE VOLTAGE (VOLTS) C C REVERSE EMITTER COLLECTOR CURRENT (AMPS) Figure 9. Base Emitter Saturation Region Figure. Forward Diode Voltage Cib (pf) f(test) = MHz 9 ma C, CAPACITANCE (pf) Cob (pf) BVCER (VOLTS) ma VR, REVERSE VOLTAGE (VOLTS) RBE (Ω) Figure. Capacitance Figure. BVCER = f(icer) Motorola Bipolar Power Transistor Device Data
6 TYPICAL SWITCHING CHARACTERISTICS 8 VCC = V PW = µs IC/IB = VCC = V PW = µs t, TIME (ns) 6 IC/IB = t, TIME ( µ s) IC/IB = IC/IB = Figure. Resistive Switch Time, ton Figure. Resistive Switch Time, toff IC/IB = VCC = V VZ = V LC = µh VCC = V VZ = V LC = µh t, TIME ( µ s) t, TIME ( µ s) Figure. Inductive Storage Time, IC/IB = Figure 6. Inductive Storage Time, IC/IB = 6 VCC = V VZ = V LC = µh tc IBoff = IBon VCC = V VZ = V LC = µh t, TIME (ns) t, TIME (ns) tfi Figure 7. Inductive Switching, tc & IC/IB = Figure 8. Inductive Switching, IC/IB = 6 Motorola Bipolar Power Transistor Device Data
7 TYPICAL SWITCHING CHARACTERISTICS t, TIME (ns) IBoff = IBon VCC = V VZ = V LC = µh tsi, STORAGE TIME ( µs) IC = A VCC = V VZ = V LC = µh IC = A hfe, FORCED GAIN Figure 9. Inductive Switching, IC/IB = Figure. Inductive Storage Time t fi, FALL TIME (ns) IBoff = IBon VCC = V VZ = V LC = µh IC = A tc, CROSSOVER TIME (ns) 8 6 VCC = V VZ = V LC = µh IC = A 6 8 hfe, FORCED GAIN IC = A 6 8 IC = A hfe, FORCED GAIN Figure. Inductive Fall Time Figure. Inductive Crossover Time t, TIME (ns). IB = ma IB = ma IB = ma IB = ma IB = A. IB = IB. VCC = V VZ = V LC = µh. t fr, FORWARD RECOVERY TIME (ns) 6 di/dt = A/µs TC = C. IF, FORWARD CURRENT (AMP). Figure. Inductive Storage Time, tsi Figure. Forward Recovery Time tfr Motorola Bipolar Power Transistor Device Data 7
8 TYPICAL SWITCHING CHARACTERISTICS VCE dyn µs dyn µs IC tsi 9% IC tfi V 6 Vclamp % Vclamp tc % IC 9% IB µs IB 9% IB IB µs TIME 6 7 TIME 8 Figure. Dynamic Saturation Voltage Measurements Figure 6. Inductive Switching Measurements VF VFRM tfr VFR (. VF unless otherwise specified) VF. VF IF % IF 6 8 Figure 7. tfr Measurements 8 Motorola Bipolar Power Transistor Device Data
9 TYPICAL SWITCHING CHARACTERISTICS Table. Inductive Load Switching Drive Circuit + V µf Ω W Ω W MTP8P µf VCE PEAK IC PEAK + V MPF9 MPF9 MUR MTP8P RB Iout VCE IB IB A COMMON Voff Ω µf Ω W MJE MTPN RB µf V(BR)CEO(sus) L = mh RB = VCC = Volts IC(pk) = ma IB Inductive Switching L = µh RB = VCC = Volts RB selected for desired IB RBSOA L = µh RB = VCC = Volts RB selected for desired IB TYPICAL CHARACTERISTICS 6. DC µs ms ms µs EXTENDED SOA V. V TC C GAIN LC = mh V VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 8. Forward Bias Safe Operating Area Figure 9. Reverse Bias Safe Operating Area Motorola Bipolar Power Transistor Device Data 9
10 TYPICAL CHARACTERISTICS POWER DERATING FACTOR THERMAL DERATING SECOND BREAKDOWN DERATING 6 8 TC, CASE TEMPERATURE ( C) Figure. Forward Bias Power Derating 6 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 8 is based on TC = C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when TC > C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 8 may be found at any case temperature by using the appropriate curve on Figure. TJ(pk) may be calculated from the data in Figure. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 9). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) SINGLE PULSE P(pk) t t DUTY CYCLE, D = t/t RθJC(t) = r(t) RθJC RθJC =. C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t)... t, TIME (ms) Figure. Typical Thermal Response (ZθJC(t)) for BULD Motorola Bipolar Power Transistor Device Data
11 PACKAGE DIMENSIONS H Q Z L V G B N D A K F T U R S J C T SEATING PLANE NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y.M, 98.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L..6.. N Q.... R S....9 T U....7 V.. Z.8. STYLE : PIN. BASE. COLLECTOR. EMITTER. COLLECTOR CASE A 6 TO AB ISSUE Y Motorola Bipolar Power Transistor Device Data
12 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters can and do vary in different applications. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 9; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo, Japan. 8 MFAX: RMFAX@ .sps.mot.com TOUCHTONE (6) 669 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Transistor Device Data BULD/D
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