PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb

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1 SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters and gold top metallization. This transistor is intended for low to medium power amplifiers requiring high gain, low noise figure, and low intermodulation distortion. The is particularly suitable for broadband MATV/CATV amplifiers. ft =.5 5 ma HIGH FREQUENCY TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector Base Voltage VCBO Vdc Emitter Base Voltage VEBO. Vdc Collector Current Continuous IC madc Total Device TC = C () Derate above TC = C PD.5 Watts mw/ C Storage Temperature Tstg 65 to +5 C CASE 7A, STYLE ELECTRICAL CHARACTERISTICS (TC = 5 C unless otherwise noted.) OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (IC =. madc, IB = ) Characteristic Symbol Min Typ Max Unit V(BR)CEO 5 Vdc Collector Base Breakdown Voltage (IC = µadc, IE = ) Emitter Base Breakdown Voltage (IE = µadc, IC = ) Collector Cutoff Current (VCB = Vdc, IE = ) ON CHARACTERISTICS DC Current Gain (IC = 5 madc, VCE = Vdc) DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 5 madc, VCE = Vdc, f =.5 GHz) Collector Base Capacitance (VCB = Vdc, Emitter Guarded) V(BR)CBO Vdc V(BR)EBO. Vdc ICBO nadc hfe ft.5 GHz Ccb..5 pf NOTE:. Case temperature measured on collector lead immediately adjacent to body of package. (continued) MOTOROLA Motorola, Inc. 99 RF DEVICE DATA

2 ELECTRICAL CHARACTERISTICS continued (TC = 5 C unless otherwise noted.) FUNCTIONAL TESTS Characteristic Noise Figure (IC = madc, VCE = Vdc, f =.5 GHz) Symbol Min Typ Max Unit NF. db Maximum Unilateral Gain/Insertion Gain () (IC = 5 madc, VCE = Vdc, f =.5 GHz) S NOTE:. GU(max) = (I S )(I S ) GU(max)/ S /.5/ db GU (max), MAXIMUM UNILATERAL GAIN (db) f, FREQUENCY (GHz) VCE = V IC = 5 ma Figure. Maximum Unilateral Gain versus Frequency S, INSERTION GAIN (db) VCE = V IC = 5 ma f, FREQUENCY (GHz) Figure. S versus Frequency GU (max), MAXIMUM UNILATERAL GAIN (db) 8 f =.5 GHz VCE = V f T, GAIN-BANDWIDTH PRODUCT (GHz) 6 5 f =.5 GHz VCE = 5 V V 8 IC, COLLECTOR CURRENT (ma) 8 IC, COLLECTOR CURRENT (ma) Figure. Maximum Unilateral Gain versus Collector Current Figure. Gain Bandwidth Product versus Collector Current

3 NF, NOISE FIGURE (db) VCE = V IC = 5 ma ma NF, NOISE FIGURE (db) f =.5 GHz VCE = V....5 f, FREQUENCY (GHz) Figure 5. Noise Figure versus Frequency 8 IC, COLLECTOR CURRENT (ma) Figure 6. Noise Figure versus Collector Current Ccb, COLLECTOR-BASE CAPACITANCE (pf) 6 8 VCB, COLLECTOR BASE VOLTAGE (Vdc) Figure 7. Collector Base Capacitance versus Collector Base Voltage

4 +j j +j5 +j5 +j +j5 +j5.5 +j j f =. GHz f =. GHz S S j5 j S. S f =. GHz S S + j5 j j5 9 Figure 8. Input/Output Reflection Coefficients versus Frequency (VCE = V, IC = 5 ma) Figure 9. Forward/Reverse Transmission Coefficients versus Frequency (VCE = V, IC = 5 ma) S S S S V CE I C f (Volts) (ma) (MHz) S φ S φ S φ S φ Table. Common Emitter S Parameters

5 PACKAGE DIMENSIONS A D N PL L K NOTES:. DIMENSION D NOT APPLICABLE IN ZONE N. MILLIMETERS INCHES DIM MIN MAX MIN MAX A C D F...8. G K L N F G C STYLE : PIN. COLLECTOR. EMITTER. BASE CASE 7A ISSUE B 5

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