1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS

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Sydney Reynolds
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1 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs Transducer Gain vs. Output Power at Fundamental Transducer Gain Power Gain vs. 6 Drain Efficiency vs Power Gain Drain Efficiency Simulated:hv25d9swp1.txt & Measured:hv25d9.swp Rev/Date: Rev/29

2 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination 35 Drain Current vs. 4 Output Power at 2fo vs. 3 Drain Current (ma) Output Power at 2fo Output Power at 3fo vs. -.6 Input Return Loss vs. -. Output Power at 3fo Input Return Loss Simulated:hv25d9swp1.txt & Measured:hv25d9.swp Rev/Date: Rev/29

3 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power Output Power at Fundamental vs. 4 Transducer Gain vs. Output Power at Fundamental 3 1 Transducer Gain Power Gain vs. Drain Efficiency vs. 7 Power Gain Drain Efficiency Simulated:hv2pmd9swp1.txt & Measured:hv2pmd9.swp Rev/Date: Rev/29

4 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power 4 Drain Current vs. 3 Output Power at 2fo vs. 35 Drain Current (ma) Output Power at 2fo Output Power at 3fo vs. -2 Input Return Loss vs. -4 Output Power at 3fo Input Return Loss Simulated:hv2pmd9swp1.txt & Measured:hv2pmd9.swp Rev/Date: Rev/29

5 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Efficiency Output Power at Fundamental vs. 4 Transducer Gain vs. Output Power at Fundamental 3 1 Transducer Gain Power Gain vs. 1 Drain Efficiency vs. Power Gain Drain Efficiency Simulated:hv2emd9swp1.txt & Measured:hv2emd9.swp Rev/Date: Rev/29

6 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Efficiency 3 Drain Current vs. 3 Output Power at 2fo vs. 25 Drain Current (ma) 15 1 Output Power at 2fo Output Power at 3fo vs. -4 Input Return Loss vs. -6 Output Power at 3fo Input Return Loss Simulated:hv2emd9swp1.txt & Measured:hv2emd9.swp Rev/Date: Rev/29

7 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power & Efficiency Output Power at Fundamental vs. 4 Transducer Gain vs. Output Power at Fundamental 3 1 Transducer Gain Power Gain vs. Drain Efficiency vs. 7 6 Power Gain Drain Efficiency Simulated:hv2ped9swp1.txt & Measured:hv2ped9.swp Rev/Date: Rev/29

8 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power & Efficiency 35 Drain Current vs. Output Power at 2fo vs. 3 1 Drain Current (ma) Output Power at 2fo Output Power at 3fo vs. -4 Input Return Loss vs. -6 Output Power at 3fo Input Return Loss Simulated:hv2ped9swp1.txt & Measured:hv2ped9.swp Rev/Date: Rev/29

9 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination 4 Total Output Power vs. 11 Transducer Gain vs. 3 1 Total Output Power 1 Transducer Gain Power Gain vs. 6 PAE vs Power Gain 15 PAE Simulated:h2i5d9swp1.txt & Measured:h2i5d9.swp Rev/Date: Rev/29

10 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination 25 Drain Current vs. 6 Drain Efficiency vs. 5 Drain Current (ma) Drain Efficiency Output Power at HIghest 3IMD vs. -.6 Input Return Loss vs. Output Power at Highest 3IMD Input Return Loss Simulated:h2i5d9swp1.txt & Measured:h2i5d9.swp Rev/Date: Rev/29

11 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power 4 Total Output Power vs. Transducer Gain vs. 3 Total Output Power 1 Transducer Gain Power Gain vs. 7 PAE vs. 6 5 Power Gain PAE Simulated:h2ipmd9swp1.txt & Measured:h2ipmd9.swp Rev/Date: Rev/29

12 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power 35 Drain Current vs. 7 Drain Efficiency vs. 3 6 Drain Current (ma) Drain Efficiency Output Power at HIghest 3IMD vs. 4-2 Input Return Loss vs. Output Power at Highest 3IMD Input Return Loss Simulated:h2ipmd9swp1.txt & Measured:h2ipmd9.swp Rev/Date: Rev/29

13 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Efficiency 4 Total Output Power vs. Transducer Gain vs. 3 Total Output Power 1 Transducer Gain Power Gain vs. 7 PAE vs. 6 5 Power Gain PAE Simulated:h2iemd9swp1.txt & Measured:h2iemd9.swp Rev/Date: Rev/29

14 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Efficiency 3 Drain Current vs. Drain Efficiency vs Drain Current (ma) 15 1 Drain Efficiency Output Power at HIghest 3IMD vs. 4-5 Input Return Loss vs. Output Power at Highest 3IMD Input Return Loss Simulated:h2iemd9swp1.txt & Measured:h2iemd9.swp Rev/Date: Rev/29

15 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power & Efficiency 4 Total Output Power vs. Transducer Gain vs. 3 Total Output Power 1 Transducer Gain Power Gain vs. 7 PAE vs. 6 5 Power Gain PAE Simulated:h2iped9swp1.txt & Measured:h2iped9.swp Rev/Date: Rev/29

16 Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm Tuned for Power & Efficiency 35 Drain Current vs. Drain Efficiency vs. 3 7 Drain Current (ma) Drain Efficiency Output Power at HIghest 3IMD vs. 4-5 Input Return Loss vs. Output Power at Highest 3IMD Input Return Loss Simulated:h2iped9swp1.txt & Measured:h2iped9.swp Rev/Date: Rev/29

17 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution: JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 1, P.O. Box 545, Denver, Colorado or Nishi-Gotanda, Shagawa-ku, Tokyo, Japan Customer Focus Center: Mfax : RMFAX@ .sps.mot.com TOUCHTONE ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.: B Tai Ping Industrial Park, Motorola Fax Back System US & Canada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong HOME PAGE: Motorola, Inc. 199

Freescale Semiconductor, I

Freescale Semiconductor, I nc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D Prepared by: Jean Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note