ICM IBM VISOL PD Rating Symbol BUL44 BUL44F Unit TL 260 C. Characteristic Symbol Min Typ Max Unit ICES
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1 SEMICONDUCTOR TECHNICAL DATA Order this document by BUL47/D NPN Bipolar Power Traistor For Switching Power Supply Applicatio The BUL47/BUL47F have an applicatio specific state of the art die designed for use in electric fluorescent lamp ballasts to 8 Watts and in Switchmode Power supplies for all types of electronic equipment. These high voltage/high speed traistors offer the following: Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain Fast Switching No Coil Required in Base Circuit for Turn Off (No Current Tail) Parametric Distributio are Tight and Coistent Lot to Lot Two Package Choices: Standard TO 22 or Isolated TO 22 BUL47F, Isolated Case 22D, is UL Recognized to 35 VRMS: File #E69369 *Motorola Preferred Device POWER TRANSISTOR 8. AMPERES 7 VOLTS 45 and 25 WATTS MAXIMUM RATINGS Rating Symbol BUL47 BUL47F Unit Collector Emitter Sustaining Voltage VCEO 4 Vdc Collector Emitter Breakdown Voltage VCES 7 Vdc Emitter Base Voltage VEBO 9. Vdc Collector Current Continuous Peak() Base Current Continuous Peak() RMS Isolated Voltage(2) (for sec, R.H. < 3%, TC = 25 C) Total Device Dissipation Derate above 25 C Test No. Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25 C) IC ICM IB IBM VISOL PD Operating and Storage Temperature TJ, Tstg 65 to 5 C THERMAL CHARACTERISTICS Thermal Resistance Junction to Case Junction to Ambient Adc Adc Volts Watts W/ C Rating Symbol BUL44 BUL44F Unit Maximum Lead Temperature for Soldering Purposes: /8 from Case for 5 Seconds RθJC RθJA ELECTRICAL CHARACTERISTICS (TC = 25 C unless otherwise noted) OFF CHARACTERISTICS C/W TL 26 C Characteristic Symbol Min Typ Max Unit Collector Emitter Sustaining Voltage (IC = ma, L = 25 mh) VCEO(sus) 4 Vdc Collector Cutoff Current (VCE = Rated VCEO, IB = ) ICEO µadc Collector Cutoff Current (VCE = Rated VCES, VEB = ) Collector Cutoff Current (VCE = 5 V, VEB = ) ICES Emitter Cutoff Current (VEB = 9. Vdc, IC = ) IEBO µadc () Pulse Test: Pulse Width = 5. ms, Duty Cycle %. (continued) (2) Proper strike and creepage distance must be provided. Designer s and SWITCHMODE are trademarks of Motorola, Inc. Designer s Data for Worst Case Conditio The Designer s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves representing boundaries on device characteristics are given to facilitate worst case design. Preferred devices are Motorola recommended choices for future use and best overall value. REV BUL47 CASE 22A 6 TO 22AB BUL47F CASE 22D 2 ISOLATED TO 22 TYPE UL RECOGNIZED 5 µadc Motorola, Inc. 995 Motorola Bipolar Power Traistor Device Data 3
2 ELECTRICAL CHARACTERISTICS continued (TC = 25 C unless otherwise noted) ON CHARACTERISTICS Base Emitter Saturation Voltage Base Emitter Saturation Voltage Collector Emitter Saturation Voltage (IC = 2. Adc, IB =.2 Adc) (IC = 4.5 Adc, IB =.9 Adc) Characteristic Symbol Min Typ Max Unit (IC = 2. Adc, IB =.2 Adc) (IC = 4.5 Adc, IB =.9 Adc) DC Current Gain (IC =. Adc, VCE = 5. Vdc) DC Current Gain (IC = 4.5 Adc, VCE =. Vdc) DC Current Gain (IC = 2. Adc, VCE =. Vdc) (TC = 25 C to 25 C) DC Current Gain (IC = madc, VCE = 5. Vdc) DYNAMIC CHARACTERISTICS VBE(sat) VCE(sat) hfe Current Gain Bandwidth (IC =.5 Adc, VCE = Vdc, f =. MHz) ft 4 MHz Output Capacitance (VCB = Vdc, IE =, f =. MHz) Cob 75 pf Input Capacitance (VEB = 8. V) Cib pf Dynamic Saturation Voltage: Determined. µs and 3. µs respectively after rising IB reaches 9% of final IB (see Figure 8) (IC = 2. Adc. µs IB = 2 madc VCC = 3 V) 3. µs (IC = 5. Adc. µs IB =.9 Adc VCC = 3 V) 3. µs VCE(dsat) SWITCHING CHARACTERISTICS: Resistive Load (D.C. %, Pulse Width = 2 µs) Turn On Time Turn Off Time Turn On Time Turn Off Time (IC = 2. Adc, IB =.2 Adc IB2 =. Adc, VCC = 3 V) (IC = 4.5 Adc, IB =.9 Adc IB = 2.25 Adc, VCC = 3 V) ton toff ton toff SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 3 V, VCC = 5 V, L = 2 µh) Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time Fall Time Storage Time Crossover Time (IC = 2. Adc, IB =.2 Adc IB2 =. Adc) (IC = 4.5 Adc, IB =.9 Adc IB2 = 2.25 Adc) (IC = 4.5 Adc, IB =.9 Adc IB2 =.9 Adc) tfi tsi tc tfi tsi tc tfi 6 tsi 2.6 tc Vdc Vdc Volts µs µs µs µs µs 3 2 Motorola Bipolar Power Traistor Device Data
3 TYPICAL STATIC CHARACTERISTICS TJ = 25 C VCE = V TJ = 25 C VCE = 5 V h FE, DC CURRENT GAIN TJ = 2 C h FE, DC CURRENT GAIN TJ = 2 C.. Figure. DC Current Volt.. Figure 2. DC Current 5 Volts 2 V CE, VOLTAGE (VOLTS).5.5. IC = A 3 A 5 A 8 A A. IB, BASE CURRENT (AMPS), VOLTAGE (VOLTS) VCE. IC/IB =... IC COLLECTOR CURRENT (AMPS) TJ = 25 C Figure 3. Collector Saturation Region Figure 4. Collector Emitter Saturation Voltage V BE, VOLTAGE (VOLTS) TJ = 25 C. IC/IB = C, CAPACITANCE (pf) Cib Cob f = MHz VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Base Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Traistor Device Data 3 3
4 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) t, TIME () VCC = 3 V PW = 2 µs TJ = 25 C IC/IB = t, TIME () IC/IB = TJ = 25 C VCC = 3 V PW = 2 µs Figure 7. Resistive Switching, ton Figure 8. Resistive Switching, toff t, TIME () VCC = 5 V VZ = 3 V LC = 2 µh t si, STORAGE TIME () TJ = 25 C IC = 2 A VCC = 5 V VZ = 3 V LC = 2 µh 5 IC/IB = TJ = 25 C IC COLLECTOR CURRENT (AMPS) 5 3 IC = 4.5 A hfe, FORCED GAIN Figure 9. Inductive Storage Time, tsi Figure. Inductive Storage Time, tsi(hfe) t, TIME () tfi 5 VCC = 5 V VZ = 3 V LC = 2 µh TJ = 25 C tc t, TIME () tfi TJ = 25 C tc VCC = 5 V VZ = 3 V LC = 2 µh Figure. Inductive Switching, tc and tfi Figure 2. Inductive Switching, tc and tfi IC/IB = 3 4 Motorola Bipolar Power Traistor Device Data
5 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) t fi, FALL TIME () IC = 4.5 A 4 TJ = 25 C IC = 2 A hfe, FORCED GAIN VCC = 5 V VZ = 3 V LC = 2 µh T C, CROSSOVER TIME () IC = 4.5 A TJ = 25 C IC = 2 A hfe, FORCED GAIN VCC = 5 V VZ = 3 V LC = 2 µh Figure 3. Inductive Fall Time Figure 4. Inductive Crossover Time I C, COLLECTOR CURRENT (AMPS).. DC (BUL47) 5 ms DC (BUL47F) GUARANTEED SAFE OPERATING AREA INFORMATION ms µs µs VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) EXTENDED SOA I C, COLLECTOR CURRENT (AMPS) TC 25 C IC/IB 4 LC = 5 µh VBE(off) = V, 5 V VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) 5 V Figure 5. Forward Bias Safe Operating Area Figure 6. Reverse Bias Switching Safe Operating Area POWER DERATING FACTOR THERMAL DERATING TC, CASE TEMPERATURE ( C) SECOND BREAKDOWN DERATING Figure 7. Forward Bias Power Derating There are two limitatio on the power handling ability of a traistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the traistor that must be observed for reliable operation; i.e., the traistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TC = 25 C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to % but must be derated when TC > 25 C. Second breakdown limitatio do not derate the same as thermal limitatio. Allowable current at the voltages shown in Figure 5 may be found at any case temperature by using the appropriate curve on Figure 7. TJ(pk) may be calculated from the data in Figure 2 and 2. At any case temperatures, thermal limitatio will reduce the power that can be handled to values less than the limitatio imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 6). This rating is verified under clamped conditio so that the device is never subjected to an avalanche mode. Motorola Bipolar Power Traistor Device Data 3 5
6 VOLTS 5 4 VCE 3 dyn µs 2 dyn 3 µs 2 9% IB 3 µs 4 3 µs IB TIME Figure 8. Dynamic Saturation Voltage Measurements IC VCLAMP IB % VCLAMP 9% IB tsi TIME % IC Figure 9. Inductive Switching Measurements tc 9% IC tfi +5 V µf 5 Ω 3 W Ω 3 W MTP8P µf VCE PEAK IC PEAK + V COMMON Voff MPF93 5 Ω MPF93 5 µf 5 Ω 3 W MUR5 MJE2 MTP8P MTP2N RB Iout A RB2 µf VCE IB IB V(BR)CEO(sus) L = mh RB2 = VCC = 2 VOLTS IC(pk) = ma IB2 INDUCTIVE SWITCHING L = 2 µh RB2 = VCC = 5 VOLTS RB SELECTED FOR DESIRED IB RBSOA L = 5 µh RB2 = VCC = 5 VOLTS RB SELECTED FOR DESIRED IB Table. Inductive Load Switching Drive Circuit 3 6 Motorola Bipolar Power Traistor Device Data
7 TYPICAL THERMAL RESPONSE r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED). D = SINGLE PULSE... t, TIME (ms) P(pk) t t 2 DUTY CYCLE, D = t/t2 Figure 2. Typical Thermal Respoe (ZθJC(t)) for BUL47 RθJC(t) = r(t) RθJC RθJC =. C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t TJ(pk) TC = P(pk) RθJC(t) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D =.5.2. P(pk). RθJC(t) = r(t) RθJC RθJC = 2.78 C/W MAX D CURVES APPLY FOR POWER.5 PULSE TRAIN SHOWN t READ TIME AT t t 2 TJ(pk) TC = P(pk) RθJC(t) DUTY CYCLE, D = t/t2.2. SINGLE PULSE.. t, TIME (ms) Figure 2. Typical Thermal Respoe (ZθJC(t)) for BUL47F Motorola Bipolar Power Traistor Device Data 3 7
8 TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP MOUNTED FULLY ISOLATED PACKAGE LEADS.7 MIN MOUNTED FULLY ISOLATED PACKAGE LEADS.7 MIN HEATSINK HEATSINK HEATSINK. MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together. MOUNTING INFORMATION** 4 4 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER NUT Figure 23a. Screw Mounted HEATSINK Figure 23b. Clip Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in. lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a cotant pressure on the package over time and during large temperature excursio. Destructive laboratory tests show that using a hex head 4 4 screw, without washers, and applying a torque in excess of 2 in. lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4 4 screws indicate that the screw slot fails between 5 to 2 in. lbs without adversely affecting the package. However, in order to positively eure the package integrity of the fully isolated device, Motorola does not recommend exceeding in. lbs of mounting torque under any mounting conditio. ** For more information about mounting power semiconductors see Application Note AN Motorola Bipolar Power Traistor Device Data
9 PACKAGE DIMENSIONS H Q Z L V G B N D A K F T U R J S C T SEATING PLANE STYLE : PIN. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U V.45.5 Z BUL44 CASE 22A 6 TO 22AB ISSUE Y A K F Q H B 2 3 G N L D 3 PL Y U.25 (.) M B M Y C T S J R SEATING PLANE STYLE 2: PIN. BASE 2. COLLECTOR 3. EMITTER NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G. BSC 2.54 BSC H J K L N.2 BSC 5.8 BSC Q R S U BUL44F CASE 22D 2 (ISOLATED TO 22 TYPE) ISSUE D Motorola Bipolar Power Traistor Device Data 3 9
10 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation coequential or incidental damages. Typical parameters can and do vary in different applicatio. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any licee under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; JAPAN: Nippon Motorola Ltd.; Tatsumi SPD JLDC, Toshikatsu Otsuki, P.O. Box 292; Phoenix, Arizona F Seibu Butsuryu Center, Tatsumi Koto Ku, Tokyo 35, Japan MFAX: RMFAX@ .sps.mot.com TOUCHTONE (62) HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INTERNET: NET.com 5 Ting Kok Road, Tai Po, N.T., Hong Kong Motorola Bipolar Power Traistor Device Data BUL47/D
CASE 221A 06 TO 220AB Collector Current Continuous ÎÎÎÎ I Peak(1) I B 4.0
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SEMIONDUTOR TEHNIAL DATA Order this document by MJD/D DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications
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SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
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The MJE5740 and MJE5742 Darlington transistors are designed for highvoltage power switching in inductive circuits. They are particularly suited for operation in applications such as: Small Engine Ignition
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... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
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...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
More informationPOWER TRANSISTORS 5 AMPERES 1200 VOLTS 35 and 75 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Symbol MJE18204 MJF18204 Unit
The MJE/MJF18204 have an application specific state of the art die dedicated to the electronic ballast ( light ballast ) and power supply applications. Improved Global Efficiency Due to Low Base Drive
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... for use in power amplifier and switching circuits, excellent safe area limits. Complement to NPN 2N5191, 2N5192 ÎÎ *MAXIMUM RATINGS ÎÎ Rating ÎÎ Symbol Î 2N5194 Î Unit ÎÎ Collector Emitter Voltage
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nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered
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... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
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A A A A MJE3009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE3009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended
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Preferred Devices The MJW21193 and MJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic
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Order this document by MC7/D... includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active, Squelch, Scan Control, and Mute Switch. The MC7 is designed for use in FM dual conversion
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Order this document by MC336C/D The MC336C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for
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SEMICONDUCTOR TECHNICAL DATA Order this document by IRF4/D N Channel Enhancement Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes.
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Order this document by SAA4/D The SAA4 drives a two phase stepper motor in the bipolar mode. The device contains three input stages, a logic section and two output stages. The IC is contained in a pin
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Order this document by /D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS)
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Order this document by MC43/D The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications.
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More informationLIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
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SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified
More informationPD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
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Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
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