MCR22-6, MCR22-8 Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS
|
|
|
- Morgan Arnold
- 5 years ago
- Views:
Transcription
1 MCR22-6, MCR22-8 referred evice Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors esigned and tested for repetitive peak operation required for C ignition, fuel ignitors, flash circuits, motor controls and lowpower switching applications. Features 50 for 2 s Safe rea High dv/dt ery Low Forward On oltage at High Current LowCost TO226 (TO92) bfree ackages are vailable* MXIMUM RTINS (T J = 25 C unless otherwise noted) Rating Symbol alue Unit eak Repetitive OffState oltage (Note ) (R K = IK, T J = 40 to +0 C, Sine Wave, RM, RRM 50 to 60 Hz, R K = k ) MCR226 MCR OnState Current RMS (80 Conduction ngles, T C = 80 C) eak Nonrepetitive Surge = 25 C, (/2 Cycle, Sine Wave, 60 Hz) I T(RMS).5 I TSM 5 Circuit Fusing Considerations (t = 8.3 ms) I 2 t s Forward eak ate ower (ulse Width.0 sec, T = 25 C) Forward verage ate ower (t = 8.3 msec, T = 25 C) Forward eak ate Current (ulse Width.0 s, T = 25 C) Reverse eak ate oltage (ulse Width.0 s, T = 25 C) M 0.5 W () 0. W I FM 0.2 RM 5.0 Operating Junction Temperature Range T J 40 to +0 Rated RRM and RM Storage Temperature Range T stg 40 to +50 C THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 50 C/W Thermal Resistance, Junctiontombient R J 60 C/W Lead Solder Temperature (Lead Length /6 from case, 0 S Max) T L +260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. RM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our bfree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. 2 3 SCRs.5 MERES RMS 400 thru 600 OLTS STRIHT LE BULK CK TO92 (TO226) CSE 029 STYLE 0 MCR 22x YWW IN SSINMENT Cathode ate node ORERIN INFORMTION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. referred devices are recommended choices for future use and best overall value. K MRKIN IRMS BENT LE TE & REEL MMO CK MCR22x = evice Code x = 6 or 8 = ssembly Location Y = Year WW = Work Week = bfree ackage (Note: Microdot may be in either location) Semiconductor Components Industries, LLC, 2008
2 ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted.) OFF CHRCTERISTICS Characteristic Symbol Min Typ Max Unit eak Repetitive Forward or Reverse Blocking Current ( K = Rated RM or RRM ; R K = k ) T C = 25 C T C = 0 C ON CHRCTERISTICS eak Forward OnState oltage (Note 2) (I TM = eak) I RM, I RRM TM.2.7 ate Trigger Current (Continuous dc) (Note 3) T C = 25 C ( K = 6 dc, R L = 00 ) T C = 40 C I T ate Trigger oltage (Continuous dc) (Note 3) T C = 25 C ( K = 7 dc, R L = 00 ) T C = 40 C T ate NonTrigger oltage ( K = 2 dc, R L = 00 ) T C = 0 C Holding Current ( K = 2 dc, R K = k ) T C = 25 C Initiating Current = 20 m T C = 40 C YNMIC CHRCTERISTICS Critical Rate of Rise of OffState oltage (R K = k ) (T C = 0 C) 2. ulse Width =.0 ms, uty Cycle %. 3. R K Current not included in measurement m dv/dt 25 / s oltage Current Characteristic of SCR + Current node + Symbol RM I RM RRM I RRM TM arameter eak Repetitive Off State Forward oltage eak Forward Blocking Current eak Repetitive Off State Reverse oltage eak Reverse Blocking Current eak on State oltage Holding Current I RRM at RRM on state Reverse Blocking Region (off state) Reverse valanche Region TM + oltage I RM at RM Forward Blocking Region (off state) node 2
3 TO92 EI RIL TE IN FN FOL BOX OR ON REEL H2 H2 H2B H2B H W2 H4 H5 L L H W W T T F F2 T2 2 2 Figure 9. evice ositioning on Tape Item Symbol Inches Specification Millimeter Min Max Min Max Tape Feedhole iameter Component Lead Thickness imension Component Lead itch F, F Bottom of Component to Seating lane H Feedhole Location H eflection Left or Right H eflection Front or Rear H2B Feedhole to Bottom of Component H Feedhole to Seating lane H efective Unit Clipped imension L Lead Wire Enclosure L Feedhole itch Feedhole Center to Center Lead First Lead Spacing imension dhesive Tape Thickness T Overall Taped ackage Thickness T Carrier Strip Thickness T Carrier Strip Width W dhesive Tape Width W dhesive Tape osition W Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. efective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum noncumulative variation between tape feed holes shall not exceed mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than consecutive missing component is permitted. 7. tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes. 5
4 ORERIN & SHIIN INFORMTION: MCR22 Series ackaging Options, evice Suffix U.S. MCR226 MCR226 MCR228 MCR228 MCR226RLR MCR226RLR MCR226RLR MCR226RLR Europe Equivalent Shipping escription of TO92 Tape Orientation MCR228RL MCR228RL 2000 / Tape & Reel Flat side of TO92 and adhesive tape visible 5000 Units / Box N/, Bulk 2000 / Tape & Reel Round side of TO92 and adhesive tape visible 2000 / Tape & mmo ack Flat side of TO92 and adhesive tape visible For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel ackaging Specifications Brochure, BR80/. 6
5 CKE IMENSIONS R N B TO92 (TO226) CSE 29 ISSUE M STRIHT LE BULK CK. IMENSIONIN N TOLERNCIN ER NSI Y4.5M, CONTROLLIN IMENSION: INCH. 3. CONTOUR OF CKE BEYON IMENSION R IS UNCONTROLLE. 4. LE IMENSION IS UNCONTROLLE IN N BEYON IMENSION K MINIMUM. L SETIN INCHES MILLIMETERS LNE K IM MIN MX MIN MX B C X X H J H J K C L N SECTION XX R N R B BENT LE TE & REEL MMO CK. IMENSIONIN N TOLERNCIN ER SME Y4.5M, CONTROLLIN IMENSION: MILLIMETERS. 3. CONTOUR OF CKE BEYON IMENSION R IS UNCONTROLLE. 4. LE IMENSION IS UNCONTROLLE IN N BEYON IMENSION K MINIMUM. T MILLIMETERS SETIN LNE K IM MIN MX B C X X J K J N C R SECTION XX N STYLE 0: IN. CTHOE 2. TE 3. NOE 7
MCR100 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
MCR0 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,
2N5060 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
MCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
2N5060 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors SILICON CONTROLLED RECTIFIERS 0.
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors nnular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor
NYE08-10B6TG. Protected TRIAC
NYE8-B6TG Protected TRIAC Silicon Bidirectional Thyristor Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive
2N6027, 2N6028. Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers. PUTs 40 VOLTS 300 mw
Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as R BB, η, I V, and I P by
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO92
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MCR106-6, MCR Thyristors. Surface Mount 400V - 600V > MCR106-6, MCR106-8 TO 225AA CASE 77 STYLE 2 G K. Description
MCR106-6, MCR106-8 Pb Description PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
C106 Series. Sensitive Gate Silicon Controlled Rectifiers
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and
MCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
MCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
MCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
C122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light,
MBR3045. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 45 VOLTS
MBR5 SWITCHMODE Power Rectifier Features and Benefits Dual Diode Construction Terminals 1 and May Be Connected for Parallel Operation at Full Rating 5 Blocking oltage Total (15 Per Diode Leg) Low Forward
MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
MCR218-2G, MCR218-4G, MCR218-6G
MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
MCR106-6, MCR Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 AMPERES RMS 400 thru 600 VOLTS
MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed
MCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description
MCR12DSM, MCR12DSN Thyristors Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive
Z0107MA TRIACS 1.0 AMPERE RMS 600 VOLTS
Z7MA Sensitive ate Triacs Series Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an
MCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
2N6400 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 16 AMPERES RMS 50 thru 800 VOLTS
Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever halfwave silicon
MC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description
MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
MAC15 Series. Triacs. Silicon Bidirectional Thyristors. TRIACS 15 AMPERES RMS 400 thru 800 VOLTS
MAC5 Series Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as solidstate relays, motor controls, heating controls and power supplies; or wherever
2N6344. Silicon Bidirectional Thyristors. TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
MCR12DCM, MCR12DCN. Thyristors. Surface Mount 400V - 800V > MCR12DCM, MCR12DCN G K. Description
MCR12DCM, MCR12DCN Pb Description This thyristor is designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon
BTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
MAC8DG, MAC8MG, MAC8NG
MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
BTA08-800CW3G. Triacs. Silicon Bidirectional Thyristors TRIACS 8 AMPERES RMS 800 VOLTS
BTA8-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
BTA25H-600CW3G, BTA25H-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTAH-600CW3G, BTAH-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
BTB16-600CW3G, BTB16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-CW3G, BTB-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
MUR405, MUR410, MUR415, MUR420, MUR440, MUR460
405, 410, 415, 420, 440, 460 420 and 460 are Preferred Devices SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
BTA12-600C4G, BTA12-800C4G. Triacs Silicon Bidirectional Thyristors. TRIACS 12 AMPERES RMS 600 thru 800 VOLTS
BTA12-6C4G, BTA12-8C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
MCR8N. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever
BTA25-600CW3G, BTA25-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 600 thru 800 VOLTS
BTA-6CW3G, BTA-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description
MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
MCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
BTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
MAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description
MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
MAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
BTA08-800CW3G. Thyristors. Surface Mount 800V > BTA08-800CW3G. Description
BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
MAC228A. Thyristors. Surface Mount 400V - 800V > MAC228A. Description
MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
MAC3030 8G. Triacs. Silicon Bidirectional Thyristors TRIACS 8.0 AMPERES RMS 250 VOLTS
Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon
BTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
2N6400. Thyristors. Surface Mount V > 2N6400. Description
2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
BTA25-600CW3G, BTA25-800CW3G
BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS
TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general purpose switching and amplifier applications. Features DC Current ain h FE = 20 70 @ I C =.0 dc Collector Emitter
BTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
MCR12DG, MCR12MG, MCR12NG
MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
MAC12D, MAC12M, MAC12N
MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
MCR. 1A (Amperes) MCR22 Series 1.5A. Product Model Reference & Naming TO-92 MCR22-8 MCR22-10 MCR22-12 MCR22-12S. 200μA MCR22-6S MCR22-12M.
1.5 Series SCR: 1.5 igh Sensitive SCRs DESCRIPTION ighly sensitive triggering levels, the BT169 Series SCRs is suitable for all applications, where the available gate current is limited, such as capacitive
BTA30H-600CW3G, BTA30H-800CW3G
BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
T2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description
T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
Programmable Unijunction Transistor Triggers
查询 RLRP 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 Preferred Device Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as RBB, η, IV, and IP by
MAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
Thyristors 25 Amp Standard & Alternistor (High Commutation) Triacs. Qxx25xx & Qxx25xHx Series. Description
Qxx25xx & Qxx25xHx Series RoHS escription This 25 mp bi-directional solid state switch series is designed for C switching and phase control applications such as motor speed and temperature modulation controls,
Features. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
MBRD620CTG Series, NRVBD640CTG Series. Switch Mode Power Rectifiers. DPAK 3 Surface Mount Package SCHOTTKY BARRIER RECTIFIERS 6.0 AMPERES, VOLTS
MBRD62CTG Series, NRVBD64CTG Series Switch Mode Power Rectifiers DPK 3 Surface Mount Package These state of the art devices are designed for use in switching power supplies, inverters and as free wheeling
Distributed by: www.jameco.com -800-8-44 The content and copyrights of the attached material are the property of its owner. Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier
CD214A-B220 ~ B260 Schottky Barrier Rectifier Chip Diode
Features SM package Surface mount Very low forward voltage drop General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
High Voltage Phase Control Thyristor, 12 A
High oltage Phase Control Thyristor, 2 3L TO-220B PRIMRY CHRCTERISTICS I T() 8 DRM / RRM 800 TM.2 I GT 5 m T J -40 C to 25 C Package Circuit configuration 2 () (K) (G) 3 3L TO-220B Single SCR FETURES Designed
MBRS240LT3G NRVBS240LT3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS
MBRS24LT3G, NRVBS24LT3G Surface Mount Schottky Power Rectifier Power Surface Mount Package These devices employ the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
MBRA140T3G NRVBA140T3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.
MBR14T3G, NRVB14T3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art
MBD301G, MMBD301LT1G, MMBD301LT3G, SMMBD301LT3G. Silicon Hot-Carrier Diodes. Schottky Barrier Diodes
, MMB0LTG, MMB0LTG, Silicon Hot-Carrier iodes Schottky Barrier iodes These devices are designed primarily for high efficiency UHF and VHF detector applications. They are readily adaptable to many other
MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 75 C 0.8 A I T(AV) Average on-state current T C
EC103xx & SxSx Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with micromps
UNISONIC TECHNOLOGIES CO., LTD
MCR00 UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 3 2 SOT-23 SOT-223 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
Description. Features. Strobes and Flashers. Ignitors. High Voltage Regulators. Pulse Generators. Functional Diagram. Additional Information
MKP3V120, MKP3V240 Pb Description Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking
MBRS260T3G NRVBS260T3G. Surface Mount Schottky Power Rectifier. SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 60 VOLTS
MBRS60T3G, NRVBS60T3G Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction
MBRS2H100T3G NBRS2H100T3G, MBRA2H100T3G NRVBA2H100T3G, Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package
MBRS2HT3G, NBRS2HT3G, MBR2HT3G, NRVB2HT3G, Surface Mount Schottky Power Rectifier SM/ Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier.
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
MC10EL16, MC100EL V ECL Differential Receiver
MC0EL6, MC00EL6 5.0 V ECL ifferential Receiver The MC0EL/00EL6 is a differential receiver. The device is functionally equivalent to the E6 device with higher performance capabilities. With output transition
C106 Series High Sensitive SCRs
is lassivated PNPN devices designed for high volume consumerapplications such as temperature, light, and speed control; process andremote control, and warning systems where reliability of operation isimportant.
(1 A to 70 A) Features. Compak SCR
Selected Packages* File #E71639 U.L. RECONIZED TO-263 D 2 Pak TO-92 *TO-218 TO-252 D-Pak TO-22 *TO-218X 3-lead Compak *TO-22 TO-251 V-Pak (1 to 7 ) E6 eneral Description The Teccor line of thyristor SCR
Teccor brand Thyristors Silicon Controlled Rectifiers
Sx02xS EV Series Amp Sensitive SCR Description New Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR s junctions are
MAC16D, MAC16M, MAC16N. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 400 thru 800 VOLTS
MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
2N6344. Thyristors. Surface Mount V > 2N6344. Description
2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled
Thyristor High Voltage, Phase Control SCR, 40 A
Thyristor High Voltage, Phase Control SCR, 40 TO-247C 2 () (K) (G) 3 PRIMRY CHRCTERISTICS I T(V) 35 V DRM /V RRM 800 V, 200 V V TM.45 V I GT 50 m T J -40 C to +25 C Package TO-247C Circuit configuration