MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description

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MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and

1 MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in surface mount package for use in automated manufacturing. Features Sensitive Gate Trigger Current Blocking Voltage to 6 V Glass Passivated Surface for Reliability and Uniformity Surface Mount Package These Devices are Pb Free and are RoHS Compliant Functional Diagram Pin Out 4 A G K Additional Information Datasheet Resources Samples

2 Maximum Ratings (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off State Voltage (Note 1) ( 4 to 125 C, Sine Wave, to 6 Hz, Gate Open) MCR8B MCR8M V DRM, V 2 RRM 6 V On-State RMS Current (All Conduction Angles; T C = 8 C) I T (RMS).8 A Peak Non-Repetitive Surge Current (1/2 Cycle Sine Wave, 6 Hz, T C = 25 C) I TSM 8. A Circuit Fusing Consideration (t = 8.3 ms) I 2 t.4 A²sec Forward Peak Gate Power (T C = 8 C, t = µs) P GM W Average Gate Power (t = 8.3 ms, T C = 8 C) P GM (AV).1 W Operating Junction Temperature Range T J -4 to +125 C Storage Temperature Range T stg -4 to +1 C Thermal Characteristics Rating Symbol Value Unit Thermal Resistance, Junction to Case (AC) PCB Mounted per Figure 1 R 8JC 2.2 C/W Thermal Resistance, Junction to Tab Measured on Anode Tab Adjacent to Epoxy Maximum Device Temperature for Soldering Purposes (for Seconds Maximum) R 8JT 25 C/W T L 26 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

3 Electrical Characteristics - OFF (T J = 25 C unless otherwise noted ; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Repetitive Forward or Reverse Blocking Current (Note 3) (V AK = Rated V DRM or V RRM, R GK = 1 kq T J = 25 C I DRM, - - μa I RRM T J = 125 C ma Electrical Characteristics - ON (T J = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Forward On-State Voltage (Note 2) (IT = A Peak) V TM 1.7 V Gate Trigger Current (Continuous ) (Note 4) (V AK = 12 V, R L = Ω) I GT 2 ma Gate Trigger Voltage (Continuous ) (V D = 12 V, R L = Ω) I H 5. ma Holding Current (Note 3) (VAK = 12 V, Initiating Current = 2 ma) V GT.8 V Turn On Time (VAK = 12 V, ITM = 5 A, IGT = 5 ma) tgt 1.25 µs 2. Pulse Test: Pulse Width 3 µs, Duty Cycle 2%. 3. RGK = Q is included in measurement. 4. RGK is not included in measurement. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 1 C, RGK = 1 kq, Exponential Method) dv/dt V/µs

4 Voltage Current Characteristic of SCR Symbol V DRM Parameter Peak Repetitive Forward Off State Voltage +C urrent Anode + V TM I DRM Peak Forward Blocking Current on state V RRM Peak Repetitive Reverse Off State Voltage I RRM at V RRM I H I RRM V TM I H Peak Reverse Blocking Current Maximum On State Voltage Holding Current Reverse Blocking Region (off state) Reverse Avalanche Region Anode +V oltage I DRM at V DRM Forward Blocking Region (off state) Figure 1. PCB for Thermal Impedance and Power Testing of SOT inches mm BOARD MOUNTED VERTICALLY IN CINCH 884 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G FIBERGLASS BASE EPOXY

5 Figure 2. On-State Characteristics Figure 3. Junction to Ambient Thermal Resistance vs Copper Tab Area I T TYPICAL AT T J = 1ϒC MAX AT T J = 1ϒC MAX AT T J = 25ϒC v T Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature Figure 5. Current Derating, cm Square Pad Reference: Ambient Temperature TA, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) = 3 6 I 9 OR 6 Hz HALFWAVE TA, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) = cm 2 FOIL, OR 6 Hz HALFWAVE I T(AV) Figure 6. Current Derating, 2. cm Square Pad Reference: Ambient Temperature Figure 7. Current Derating Reference: Anode Tab TA, MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) = PAD AREA = 4. cm 2, OR 6 Hz HALFWAVE I T(AV) T(tab), MAXIMUM ALLOWABLE TAB TEMPERATURE ( C) 1 = 3 6 OR 6 Hz HALFWAVE I T(AV)

6 Figure 8. Power Dissipation Figure 9. Thermal Response Device Mounted on Figure 1 Printed Circuit Board MAXIMUM AVERAGE POWER (AV),DISSIPATION (WATTS) P I T(AV) = r T, TRANSIENT THERMAL RESISTANCE NORMALIZED t, TIME (SECONDS) Figure. Typical Gate Trigger Voltage vs Junction Temperature Figure 11. Typical Normalized Holding Current vs Junction Temperature V GT, GATE TRIGGER VOLTAGE (VOLTS) V AK = 12 V R L = T J, JUNCTION TEMPERATURE, (ϒC) Figure 12. Typical Range of V GT versus Measured I GT Figure 13. Typical Gate Trigger Current vs Junction Temperature.7 V GT, GATE TRIGGER VOLTAGE (VOLTS) V AK = 12 V R L = T J = 25ϒC.3 I GT, GATE TRIGGER CURRENT ( A)

7 Figure 14. Holding Current Range vs Gate-Cathode Resistance Figure 15. Exponential Static dv/dt vs. Junction Temperature and Gate-Cathode Termination Resistance HOLDING CURRENT (ma) I H, I GT = 48 A,, R I GT = 7 A T J = 25ϒC STATIC dv/dt (V/ μ S) 5.,, R GK V pk = 4 V 75 T J = 25 Figure 16. Exponential Static dv/dt vs Peak Voltage and Gate-Cathode Termination Resistance Figure 17. Exponential Static dv/dt vs Gate-Cathode Capacitance and Resistance STATIC dv/dt (V/ μ S) 4 V 3 V 2 V V V V T J = 1 C STATIC dv/dt (V/ μ S) T J = 1 C 4 V (PEAK) R GK = R GK = k 5. 5.,.1 R GK = k 1. R GK C GK Figure 18. Exponential Static dv/dt vs Gate-Cathode Termination Resistance and Product Trigger Current Sensitivity STATIC dv/dt (V/ S) 5. I GT = 7 A I GT = 5 A I GT = 35 A I GT = 15 A,,

8 Dimensions Soldering Footprint D b H E E e1 e b (3) A1 A L1 C SCALE 6:1 mm inches Dim Inches Millimeters Min Nom Max Min Nom Max Part Marking System A A b b c D E e e L H E DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION: INCH. 1 Pin Assignment SOT 223 CASE 318E STYLE 1 Cathode 2 Anode 3 Gate 1 AYW CR8x CR8x =D evice Code x = B or M A= Assembly Location Y= Year W= Work Week =P b Free Package (Note: Microdot may be in either location) 4 Anode Ordering Information Device Package Shipping MCR8BT1G SOT-223 (Pb-Free) /Tape & Reel Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at: MCR8MT1G TO-223 (Pb-Free) /Tape & Reel

MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description

MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive