TIC106 SERIES SILICON CONTROLLED RECTIFIERS

Transcription

1 TIC06 SERIES Copyright 999, Power Innovations Limited, UK APRIL 97 - REVISED JULY A Continuous On-State Current 30 A Surge-Current Glass Passivated Wafer 400 V to 800 V Off-State Voltage Max I GT of 200 µa K A G TO-220 PACKAGE (TOP VIEW) 2 3 Pin 2 is in electrical contact with the mounting base. MDCACA absolute maximum ratings over operating case temperature (unless otherwise noted) Repetitive peak off-state voltage (see Note ) Repetitive peak reverse voltage RATING SYMBOL VALUE UNIT TIC06D TIC06M TIC06S TIC06N TIC06D TIC06M TIC06S TIC06N Continuous on-state current at (or below) 80 C case temperature (see Note 2) I T(RMS) 5 A Average on-state current (80 conduction angle) at (or below) 80 C case temperature (see Note 3) NOTES:. These values apply when the gate-cathode resistance R GK = kω. 2. These values apply for continuous dc operation with resistive load. Above 80 C derate linearly to zero at 0 C. 3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 80 C derate linearly to zero at 0 C. 4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium. 5. This value applies for a maximum averaging time of 20 ms. V DRM V RRM I T(AV) 3.2 A Surge on-state current at (or below) 25 C (see Note 4) I TSM 30 A Peak positive gate current (pulse width 300 µs) I GM 0.2 A Peak gate power dissipation (pulse width 300 µs) P GM.3 W Average gate power dissipation (see Note 5) P G(AV) 0.3 W Operating case temperature range -40 to +0 C Storage temperature range T stg -40 to +25 C Lead temperature.6 mm from case for 0 seconds T L 230 C V V Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.

2 TIC06 SERIES APRIL 97 - REVISED JULY 2000 electrical characteristics at 25 C case temperature (unless otherwise noted) I DRM I RRM NOTE PARAMETER TESONDITIONS MIN TYP MAX UNIT Repetitive peak off-state current Repetitive peak reverse current V D = rated V DRM R GK = kω = 0 C 400 µa V R = rated V RRM I G = 0 = 0 C ma I GT Gate trigger current V AA = 2 V R L = 00 Ω t p(g) 20 µs µa V GT I H V T dv/dt Gate trigger voltage Holding current Peak on-state voltage Critical rate of rise of off-state voltage V AA = 2 V t p(g) 20 µs V AA = 2 V t p(g) 20 µs V AA = 2 V t p(g) 20 µs V AA = 2 V Initiating I T = 0 ma V AA = 2 V Initiating I T = 0 ma R L = 00 Ω R GK = kω R L = 00 Ω R GK = kω R L = 00 Ω R GK = kω = - 40 C = 0 C R GK = kω = - 40 C R GK = kω 6: This parameter must be measured using pulse techniques, t p = 300 µs, duty cycle 2 %. Voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body I T = 5 A (See Note 6).7 V V D = rated V D R GK = kω = 0 C 0 V/µs V ma thermal characteristics PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance 3.5 C/W R θja Junction to free air thermal resistance 62.5 C/W 2

3 TIC06 SERIES APRIL 97 - REVISED JULY 2000 THERMAL INFORMATION I T(AV) - Maximum Average Anode Forward Current - A AVERAGE ANODE ON-STATE CURRENT DERATING CURVE Continuous DC F = 80º 0 80 F Conduction Angle Case Temperature - C TI20AA P A - Anode Power Dissipated - W ANODE POWER DISSIPATED ON-STATE CURRENT 0 00 I T - On-State Current - A Figure. Figure T J = 0 C TI20AB I TM - Peak Half-Sine-Wave Current - A 00 0 SURGE ON-STATE CURRENT CYCLES OF CURRENT DURATION TI20AC 80 C No Prior Device Conduction Gate Control Guaranteed - Transient Thermal Resistance - C/W R qjc(t) 0 TRANSIENT THERMAL RESISTANCE CYCLES OF CURRENT DURATION TI20AD Consecutive 50 Hz Half-Sine-Wave Cycles Consecutive 50 Hz Half-Sine-Wave Cycles Figure 3. Figure 4. 3

4 TIC06 SERIES APRIL 97 - REVISED JULY 2000 TYPICAL CHARACTERISTICS GATE TRIGGER VOLTAGE HOLDING CURRENT CASE TEMPERATURE TC20AB 0 CASE TEMPERATURE TC20AD V GT - Gate Trigger Voltage - V V AA = 2 V R L = 00 W R GK = kw t p(g) 20 µs I H - Holding Current - ma V AA = 2 V R GK = kw Initiating I T = 0 ma Case Temperature - C - Case Temperature - C Figure 5. Figure PEAK ON-STATE VOLTAGE PEAK ON-STATE CURRENT TC20AE V TM - Peak On-State Voltage - V = 25 C t p = 300 µs Duty Cycle 2 % I TM - Peak On-State Current - A Figure 7. 4

5 TIC06 SERIES APRIL 97 - REVISED JULY 2000 TO pin plastic flange-mount package MECHANICAL DATA This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO-220 4,70 4,20 3,96 0,4,32 ø 3,7 0,0 2,95,23 2,54 6,6 6,0 5,32 4,55 8,0 TYP. 6, 5,6 0,97 0,66 2 3,47,07 4, 2,7 2,74 2,34 0,64 0,4 5,28 4,68 2,90 2,40 ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. 5

6 TIC06 SERIES APRIL 97 - REVISED JULY 2000 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright 2000, Power Innovations Limited 6