BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS

Transcription

1 Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD546 Series 85 W at 25 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available B C SOT-93 PACKAGE (TOP IEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAA absolute maximum ratings at 25 C case temperature (unless otherwise noted) Collector-base voltage (I E = 0) Collector-emitter voltage (I B = 0) (see Note 1) NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150 C case temperature at the rate of 0.68 W/ C. 3. Derate linearly to 150 C free air temperature at the rate of 28 mw/ C. RATING SYMBOL ALUE UNIT B B Emitter-base voltage EBO 5 Continuous collector current 15 A Continuous device dissipation at (or below) 25 C case temperature (see Note 2) P tot 85 W Continuous device dissipation at (or below) 25 C free air temperature (see Note 3) P tot 3.5 W Operating free air temperature range T A -65 to +150 C Operating junction temperature range T j -65 to +150 C Storage temperature range T stg -65 to +150 C Lead temperature 3.2 mm from case for seconds T L 2 C CBO CEO Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1

2 electrical characteristics at 25 C case temperature (BR)CEO ES EO I EBO h FE CE(sat) BE h fe h fe PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio = 30 ma (see Note 4) CE = CE = CE = CE = CE = 30 CE = I B = 0 I B = 0 I B = 0 B B /545A B/545C EB = 5 = 0 1 ma CE = CE = CE = I B = 625 ma I B = 2 A = 1 A = 5 A = A = 5 A = A (see Notes 4 and 5) (see Notes 4 and 5) CE = 4 = A (see Notes 4 and 5) 1.8 CE = = 0.5 A f = 1 khz 20 CE = = 0.5 A f = 1 MHz 3 NOTES: 4. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts ma ma thermal characteristics PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance 1.47 C/W R θja Junction to free air thermal resistance 35.7 C/W resistive-load-switching characteristics at 25 C case temperature PARAMETER TEST CONDITIONS MIN TYP MAX UNIT t on Turn-on time = 6 A I B(on) = 0.6 A I B(off) = -0.6 A 0.6 µs t off Turn-off time BE(off) = -4 R L = 5 Ω t p = 20 µs, dc 2% 1 µs oltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2

3 TYPICAL CHARACTERISTICS h FE - DC Current Gain 0 CE = 4 TYPICAL DC CURRENT GAIN COLLECTOR CURRENT T C = 25 C t p = 300 µs, duty cycle < 2% TCS633AJ CE(sat) - Collector-Emitter Saturation oltage - COLLECTOR-EMITTER SATURATION OLTAGE BASE CURRENT 0 1 TCS633AB = 1 A = 3 A = 6 A = A Collector Current - A I B - Base Current - A Figure 1. Figure 2. BE - Base-Emitter oltage CE = 4 T C = 25 C BASE-EMITTER OLTAGE COLLECTOR CURRENT TCS633AC Collector Current - A Figure 3. 3

4 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAS633AE - Collector Current - A 0 1 B CE - Collector-Emitter oltage - Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION CASE TEMPERATURE TIS633AC P tot - Maximum Power Dissipation - W T C - Case Temperature - C Figure 5. 4

5 MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 4,1 ø 4,0 15,2 14,7 3,95 4,15 1,37 1,17 12,2 MAX. 16,2 MAX. 31,0 TYP. 18,0 TYP ,30 1, 0,78 0,50 11,1,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW 5

6 IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEICES OR SYSTEMS. Copyright 1997, Power Innovations Limited 6