DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW. PBSS3540M 40 V, 0.5 A PNP low V CEsat (BISS) transistor. Product specification 2003 Aug 12
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1 DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D Aug 12
2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to reduced heat generation Reduced printed-circuit board requirements. APPLICATIONS Power management: DC-DC converter Supply line switching Battery charger LCD backlighting. Peripheral driver: Driver in low supply voltage applications (e.g. lamps and LEDs). Inductive load drivers (e.g. relays, buzzers and motors). DESCRIPTION Low V CEsat PNP transistor in a SOT883 leadless ultra small plastic package. NPN complement: PBSS254M. QUICK REFERENCE DATA SYMBOL PARAMETER MAX. UNIT V CEO collector-emitter voltage 4 V I C collector current (DC) 5 ma I CM peak collector current 1 A R CEsat equivalent on-resistance <7 mω PINNING PIN DESCRIPTION 1 base 2 emitter 3 collector Bottom view MAM469 MARKING TYPE NUMBER MARKING CODE DA Fig.1 Simplified outline (SOT883) and symbol. 23 Aug 12 2
3 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V CBO collector-base voltage open emitter 4 V V CEO collector-emitter voltage open base 4 V V EBO emitter-base voltage open collector 6 V I C collector current (DC) notes 1 and 2 5 ma I CM peak collector current 1 A I BM peak base current 1 ma P tot total power dissipation T amb 25 C; notes 1 and 2 25 mw T amb 25 C; note 1 and 3 43 mw T stg storage temperature C T j junction temperature 15 C T amb operating ambient temperature C Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 6 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm 2. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-a thermal resistance from junction to in free air; notes 1 and 2 5 K/W ambient in free air; notes 1, 3 and 4 29 K/W Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 6 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm Operated under pulsed conditions: duty cycle δ 2%, pulse width t p 3 ms. Soldering Reflow soldering is the only recommended soldering method. 23 Aug 12 3
4 CHARACTERISTICS T amb =25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I CBO collector-base cut-off current V CB = 3 V; I E = 1 na V CB = 3 V; I E = ; T j = 15 C 5 µa I EBO emitter-base cut-off current V EB = 5 V; I C = 1 na h FE DC current gain V CE = 2 V; I C = 1 ma 2 V CE = 2 V; I C = 1 ma; note 1 15 V CE = 2 V; I C = 5 ma; note 1 4 V CEsat collector-emitter saturation voltage I C = 1 ma; I B =.5 ma 5 mv I C = 1 ma; I B = 5 ma 13 mv I C = 2 ma; I B = 1 ma 2 mv I C = 5 ma; I B = 5 ma; note 1 35 mv R CEsat equivalent on-resistance I C = 5 ma; I B = 5 ma; note 1 44 <7 mω V BEsat base-emitter saturation voltage I C = 5 ma; I B = 5 ma; note V V BEon base-emitter turn-on voltage V CE = 2 V; I C = 1 ma; note V f T transition frequency I C = 1 ma; V CE = 5 V; 1 3 MHz f = 1 MHz C c collector capacitance V CB = 1 V; I E =I e = ; f = 1 MHz 1 pf Note 1. Pulse test: t p 3 µs; δ Aug 12 4
5 8 MLE22 12 MLE23 h FE 6 V BE (mv) V CE = 2 V. T amb = 15 C. T amb =25 C. T amb = 55 C V CE = 2 V. T amb = 55 C. T amb =25 C. T amb = 15 C Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 1 3 MLE24 12 MLE25 V CEsat (mv) V BEsat (mv) I C /I B = 2. I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. T amb = 15 C. T amb =25 C. T amb = 55 C. Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 23 Aug 12 5
6 12 MLE2 1 3 MLE21 I C (ma) 8 (5) (7) (9) (4) (6) (8) (1) R CEsat (Ω) V CE (V) T amb =25 C. I B = 4 ma. I B = 36 ma. I B = 32 ma. (4) I B = 28 ma. Fig.6 (5) I B = 24 ma. (6) I B = 2 ma. (7) I B = 16 ma. (8) I B = 12 ma. (9) I B = 8 ma. (1) I B = 4 ma. Collector current as a function of collector-emitter voltage; typical values. I C /I B = 2. T amb = 15 C. T amb =25 C. T amb = 55 C. Fig.7 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 23 Aug 12 6
7 PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1. x.6 x.5 mm SOT883 L L 1 2 b e 3 b 1 1 e 1 A A 1 E D.5 1 mm DIMENSIONS (mm are the original dimensions) scale UNIT mm A A 1 b b max. 1 D E e e 1 L L Note 1. Including plating thickness OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE SOT883 SC Aug 12 7
8 DATA SHEET STATUS LEVEL DATA SHEET STATUS PRODUCT STATUS DEFINITION I Objective data Development This data sheet contains data from the objective specification for product development. reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify for any damages resulting from such application. Right to make changes reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 23 Aug 12 8
9 a worldwide company Contact information For additional information please visit Fax: For sales offices addresses send to: sales.addresses@ Koninklijke Philips Electronics N.V. 23 SCA75 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands /1/pp9 Date of release: 23 Aug 12 Document order number:
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
DATA SHEET. BAV74 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May Jan 14.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1999 May 11 2004 Jan 14 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 50
BUT12AX. 1. Product profile. 2. Pinning information. Silicon diffused power transistor. 1.1 Description. 1.2 Features. 1.
M3D38 Rev. 6 June 24 Product data. Product profile. Description High voltage, high speed, NPN power transistor in a plastic package..2 Features Isolated package Fast switching..3 Applications Inverters
DATA SHEET. BAV23S General purpose double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 05.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1999 May 05 2001 Oct 12 FEATURES Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse
DATA SHEET. BAV70 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Apr 03.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 2001 Oct 11 2002 Apr 03 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75
PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Rev. 04 15 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD)
DISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N914; 1N914A; 1N914B High-speed diodes. Product specification Supersedes data of 1999 May 26.
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 26 2003 Jun 06 FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage:
DATA SHEET. BAS216 High-speed switching diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 22.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 Supersedes data of 1999 Apr 22 2002 May 28 FEATURES Small ceramic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D088. BB200 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Low-voltage variable capacitance double diode 2001 Oct 12 FEATURES Very steep C/V curve C1: 70 pf; C4.5: 13.4 pf C1 to C5 ratio: min. 5 Low series
DISCRETE SEMICONDUCTORS DATA SHEET M3D319. BB145C Low-voltage variable capacitance diode. Preliminary specification 2001 Dec 11
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Low-voltage variable capacitance diode 2001 Dec 11 FEATURES Ultra small plastic SMD package Very low capacitance spread High capacitance ratio C1 to C4 ratio:
DATA SHEET. 2N5415; 2N5416 PNP high-voltage transistors DISCRETE SEMICONDUCTORS May 21
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 FEATURES Low current (max. 200 ma) High voltage (max. 300
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
2N Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 6 28 April 26 Product data sheet. Product profile. General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology..2 Features Logic level
60 V, 1 A PNP medium power transistors
Rev. 8 25 February 28 Product data sheet. Product profile. General description PNP medium power transistor series. Table. Product overview Type number [] Package NPN complement NXP JEITA JEDEC BCP52 SOT223
NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.
BFR52 Rev. 3 1 September 24 Product data sheet 1. Product profile 1.1 General description The BFR52 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain
DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. BZA418A Quadruple ESD transient voltage suppressor. Product specification 2002 Sep 02
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 Quadruple ESD transient voltage suppressor 2002 Sep 02 FEATURES PINNING ESD rating >8 kv, according to IEC1000-4-2 SOT457 surface mount package
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PMLL4148L; PMLL4448. High-speed switching diodes. Type number Package Configuration. PMLL4148L SOD80C - single diode PMLL4448 SOD80C - single diode
Rev. 06 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass
DATA SHEET. BCW71; BCW72 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1997 Mar 06.
DISCRETE SEMICONDUCTORS DT SHEET ok, halfpage M3D088 Supersedes data of 1997 Mar 06 1999 pr 19 FETURES Low current (100 m) Low voltage (45 V) Low noise. PPLICTIONS General purpose switching and amplification.
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
40 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 4 April 202 Product data sheet. Product profile. General description NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN006B-3 (SOT883B) Surface-Mounted Device
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
PBSS4112PANP. Load switch Battery-driven devices Power management Charging circuits Power switches (e.g. motors, fans)
20 V, A NPN/PNP low VCEsat (BISS) transistor 29 November 202 Product data sheet. Product profile. General description NPN/PNP low V CEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium
2N Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.
Rev. 4 26 April 25 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
BC635; BCP54; BCX V, 1 A NPN medium power transistors
45 V, A NPN medium power transistors Rev. 7 4 June 7 Product data sheet. Product profile. General description NPN medium power transistor series. Table. Product overview Type number [] Package PNP complement
DISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZX79 series Voltage regulator diodes. Product specification Supersedes data of 1999 May 25.
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 25 2002 Feb 27 FEATURES Total power dissipation: max. 500 mw Two tolerance series: ±2%, and approx. ±5% Working voltage range: nom.
NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.
Rev. 2 7 November 29 Product data sheet. Product profile. General description NPN low V CEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic
PBHV9560Z. 1. General description. 2. Features and benefits. 3. Applications. Quick reference data
2 August 204 Product data sheet. General description PNP high-voltage low V CEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 27 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and
DATA SHEET. PDZ-B series Voltage regulator diodes DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1998 Apr 23.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 Supersedes data of 1998 Apr 23 2002 Feb 18 FEATURES Total power dissipation: max. 400 mw Small plastic package suitable for surface mounted design
DATA SHEET. BZA800AL series Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS. Product specification 2002 Jan 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 Quadruple ESD transient voltage suppressor 2002 Jan 11 FEATURES ESD rating >8 kv contact discharge, according to IEC1000-4-2 SOT353 (SC-88A) surface
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 207 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic