NPN 5 GHz wideband transistor. The transistor is encapsulated in a 3-pin plastic SOT23 envelope.

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1 BFTA Rev. 4 6 July 4 Product data sheet. Product profile. General description The BFTA is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to GHz. The transistor is encapsulated in a 3-pin plastic SOT3 envelope.. Features Low current consumption ( µa to ma) Low noise figure Gold metallization ensures excellent reliability..3 Quick reference data Table : Quick reference data Symbol Parameter Conditions Min Typ Max Unit V CBO collector-base open emitter V voltage V CEO collector-emitter open base - - V voltage I C DC collector ma current P tot total power up to T s = 6 C [] mw dissipation h FE DC current gain I C =. ma; V CE = V 8 f T G UM transition frequency maximum unilateral power gain I C = ma; V CE = V; T amb = C; f = MHz I C =. ma; V CE = V; T amb = C; f = GHz F noise figure Γ = Γ opt ; I C =. ma; V CE = V; T amb = C; f = GHz Γ = Γ opt ; I C = ma; V CE = V; T amb = C; f = GHz [] T s is the temperature at the soldering point of the collector tab GHz - - db db - - db

2 BFTA. Pinning information Table : Discrete pinning Pin Description Simplified outline Symbol Code: V base 3 3 emitter 3 collector SOT3 sym 3. Ordering information 4. Marking Table 3: Ordering information Type number Package Name Description Version BFTA - plastic surface mounted package; 3 leads SOT3. Limiting values Table 4: Marking Type number Marking code [] BFTA 34* [] * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. Table : Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V CBO collector-base voltage open emitter - 8 V V CEO collector-emitter voltage open base - V V EBO emitter-base voltage open collector - V I C DC collector current - 6. ma P tot total power dissipation up to T s = 6 C [] - 3 mw T stg storage temperature 6 + C T j junction temperature - 7 C [] T s is the temperature at the soldering point of the collector tab Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 of 4

3 BFTA 6. Thermal characteristics 7. Characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-s) from junction to soldering point [] 6 K/W [] T s is the temperature at the soldering point of the collector tab. Table 7: Characteristics T j = C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit I CBO collector cut-off I E = A; V CB = V - - na current h FE DC current gain I C =. ma; V CE = V 8 f T C re G UM transition frequency feedback capacitance maximum unilateral power gain I C = ma; V CE = V; T amb = C; f = MHz I C =i c = A; V CB =V; f = MHz I C =. ma; V CE =V; T amb = C; f = GHz F noise figure Γ = Γ opt ; I C =. ma; V CE = V; T amb = C; f = GHz Γ = Γ opt ; I C = ma; V CE = V; T amb = C; f = GHz [] G UM is the maximum unilateral power gain, assuming S is zero and S G UM = log db ( S )( S ) 3. - GHz pf [] - - db db - - db Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 3 of 4

4 BFTA 4 mbg47 mcd38 P tot (mw) 3 h FE T s ( C) 3 I C (ma) V CE = V. Fig. Power derating curve. Fig. DC current gain as a function of collector current..4 mcd3 6 mcd4 C re (pf).3 f T (GHz) V CB (V) 3 4 IC (ma) I C = i c = A; f = MHz. V CE = V; T amb = C; f = MHz. Fig 3. Feedback capacitance as a function of collector-base voltage. Fig 4. Transition frequency as a function of collector current. Figure, 6, 7 and 8, G UM = maximum unilateral power gain; MSG = maximum stable gain Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 4 of 4

5 BFTA mcd4 mcd gain (db) G UM gain (db) G UM MSG MSG.... I C (ma).... I C (ma) V CE = V; f = MHz. V CE = V; f = GHz. Fig. Gain as a function of collector current. Fig 6. Gain as a function of collector current. gain (db) mcd6 gain (db) mcd7 4 G UM 4 G UM 3 3 MSG MSG G max 3 f (MHz) 4 G max 3 f (MHz) 4 V CE = V; I C =. ma. V CE = V; I C = ma. Fig 7. Gain as a function of frequency. Fig 8. Gain as a function of frequency Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 of 4

6 BFTA 4 mcd4 4 mcd46 F (db) 3 f = GHz F (db) 3 I C = ma GHz MHz ma. ma I C (ma) 3 f (MHz) 4 Fig 9. V CE = V. V CE = V. Minimum noise figure as a function of collector current. Fig. Minimum noise figure as a function of frequency.. pot. unst. region 6 db +j j... MSG 4. db 4 db. db stability circle Γ opt F min =.9 db. 3 db db. mcd8 See Table 8; Z o =Ω. Average gain parameter: MSG = 4. db. Fig. Noise circle figure Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 6 of 4

7 BFTA Table 8: Noise parameters f (MHz) V CE (V) I C (ma) F min (db) Γ opt R n / (mag) (ang) j j... MSG. db db pot. unst. region 8 db 4 db 3 db stability circle Γ opt F min = db. 8 db. mcd9 See Table 9; Z o =Ω. Average gain parameter: MSG =. db. Fig. Noise circle figure. Table 9: Noise parameters f (MHz) V CE (V) I C (ma) F min (db) Γ opt R n / (mag) (ang) Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 7 of 4

8 BFTA pot. unst. region stability circle. MSG 7.7 db +j j. 3 db.. db 7 db 4 db Γ opt F min =.4 db. 6 db. mcd See Table ; Z o =Ω. Average gain parameter: MSG = 7.7 db. Fig 3. Noise circle figure. Table : Noise parameters f (MHz) V CE (V) I C (ma) F min (db) Γ opt R n / (mag) (ang) Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 8 of 4

9 BFTA.. +j j.. 4 MHz 3 GHz.. mcd V CE = V; I C = ma. Z o = Ω. Fig 4. Common emitter input reflection coefficient (S ) GHz 8 4 MHz mcd V CE = V; I C = ma. Fig. Common emitter forward transmission coefficient (S ) Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 9 of 4

10 BFTA GHz MHz mcd4 V CE = V; I C = ma. Fig 6. Common emitter reverse transmission coefficient (S )... +j j.. 4 MHz. 3 GHz. mcd3 V CE = V; I C = ma. Z o = Ω. Fig 7. Common emitter output reflection coefficient (S ) Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 of 4

11 BFTA 8. Package outline Plastic surface mounted package; 3 leads SOT3 D B E A X H E v M A 3 Q A A c e bp w M B Lp e detail X mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max.. mm..9 b p c D E e e H E L p Q v w OUTLINE VERSION SOT3 REFERENCES IEC JEDEC EIAJ TO-36AB EUROPEAN PROJECTION ISSUE DATE Fig 8. Package outline Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 of 4

12 BFTA 9. Revision history Table : Revision history Document ID Release date Data sheet status Change notice Order number Supersedes BFTA_4 476 product data sheet BFTA_CNV_3 Modifications: Converted from Lotus Manuscript format to TDM format. Marking code added. BFTA_CNV_3 997 product specification Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 of 4

13 BFTA. Data sheet status Level Data sheet status [] Product status [] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [] Please consult the most recently issued data sheet before initiating or completing a design. [] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.. Definitions. Disclaimers Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 634). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Life support These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status Production ), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 3. Contact information For additional information, please visit: For sales office addresses, send an to: sales.addresses@ Koninklijke Philips Electronics N.V. 4. All rights reserved. Product data sheet Rev. 4 6 July 4 3 of 4

14 BFTA 4. Contents Product profile General description Features Quick reference data Pinning information Ordering information Marking Limiting values Thermal characteristics Characteristics Package outline Revision history Data sheet status Definitions Disclaimers Contact information Koninklijke Philips Electronics N.V. 4 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 6 July 4 Document order number: Published in The Netherlands

NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability.

NPN 9 GHz wideband transistor. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. BFR52 Rev. 3 1 September 24 Product data sheet 1. Product profile 1.1 General description The BFR52 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features High power gain