Darlington Transistors

Size: px
Start display at page:

Download "Darlington Transistors"

Transcription

1 Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP V (minimum) - TIP121, TIP V (minimum) - TIP122, TIP127 Collector-emitter saturation voltage - V CE (sat) = 2 V (maximum) at I C = 3 A Monolithic construction with built-in base-emitter shunt resistors Pin 1. Base 2. Collector 3. Emitter 4. Collector (Case) Maximum Ratings Dimensions Minimum Maximum A B C D E F G H I J K L M O Dimensions : Millimetres NPN PNP TIP120 TIP 125 TIP121 TIP 126 TIP122 TIP A Darlington Complementary Silicon Power Transistors 60 to 400 V 65 W TO-220 Parameter Symbol TIP120 TIP121 TIP122 TIP125 TIP126 TIP127 Unit Collector-Emitter Voltage V CEO Collector-Base Voltage V CBO Emitter-Base Voltage V EBO 5 Collector Current - Continuous - Peak I C 5 I CM 8 Base Current I B 120 ma Total Power Dissipation at T C = 25 C Derate above 25 C Operating and Storage Junction Temperature Range P D 65 2 V A W W / C T J, T STG -65 to +150 C Page <1> 16/06/12 V1.1

2 Thermal Characteristics Characteristic Symbol Maximum Unit Thermal Resistance Junction to Case Rθjc 1.92 C / W Power Derating P D, Power Dissipation (W) T C, Temperature ( C) Electrical Characteristics (T C = 25 C unless otherwise noted) Characteristic Symbol Minimum Maximum Unit Off Characteristics Collector-Emitter Breakdown Voltage (1) (I C = 30 ma, I B = 0) TIP120, TIP125 TIP121, TIP126 TIP122, TIP127 (V CE = 30 V, I B = 0) TIP120, TIP125 (V CE = 40 V, I B = 0) TIP121, TIP126 (V CE = 50 V, I B = 0) TIP122, TIP127 (V CE = 60 V, I B = 0) TIP120, TIP125 (V CE = 80 V, I B = 0) TIP121, TIP126 (V CE = 100 V, I B = 0) TIP122, TIP127 (V EB = 5 V, I C = 0) V CEO (SUS) I CEO - I CBO - - V I EBO - 2 ma On Characteristics (1) DC Current Gain (I C = A, V CE = 3 V) (I C = 3 A, VCE = 3 V) h FE 1,000 1, Collector-Emitter Saturation Voltage (I C = 3 A, I B = 12 ma) (I C = 5 A, I B = 20 ma) Base-Emitter on Voltage (I C = 3 A, V CE = 3 V) V CE (sat) V V BE (on) Page <2> 16/06/12 V1.1

3 Dynamic Characteristics Small-Signal Current Gain (I C = 3 A, V CE = 4 V, f = 1 MHz) h fe Output Capacitance (V CB = 10 V, I E = 0, f = 0.1 MHz) TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 C ob pf (1) Pulse Test : Pulse width = 300 µs, duty cycle 2% NPN TIP120 TIP121 TIP122 Internal Schematic Diagram PNP TIP125 TIP126 TIP127 Figure - 2 Switching Time Figure - 3 Switching Time T, Time (µs) T, Time (µs) Figure - 4 Small Signal Current Gain Figure - 5 Capacitances h FE, Small Signal Current Gain C, Capacitances (pf) f, Frequency (KHz) V R, Reverse Voltage (V) Page <3> 16/06/12 V1.1

4 Figure - 6 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate I C - V CE limits of the transistor that must not be subjected to greater dissipation than the curves indicate The data of Figure - 6 is based on T J (PK) = 150 C; T C is variable depending on power level Second breakdown pulse limits are valid for duty cycles to 10% provided T J (PK) 150 C, At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown Figure - 7 DC Current Gain h FE, DC Current Gain h FE, DC Current Gain Figure - 8 Collector Saturation Region I B, Base Current (ma) I B, Base Current (ma) Page <4> 16/06/12 V1.1

5 Figure - 9 ON Voltage V, Voltage (V) V, Voltage (V) I C, Collector Current (A) Specification Table I C A 5 V CEO (Maximum) V 60 h FE Minimum at I C = 3A P tot at 25 C W Package NPN TIP120 Part Number 80 1, TO-220 TIP121 TIP126 PNP TIP TIP122 TIP127 Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group's liability for death or personal injury resulting from its negligence. Multicomp is the registered trademark of the Group. Premier Farnell plc Page <5> 16/06/12 V1.1

Darlington Transistors

Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications Collector-Emitter sustaining voltage V CEO (sus) = 60 V (Minimum) - TIP45 = 80 V (Minimum) - TIP4, TIP46 = 00 V (Minimum)

More information

TIP120, 121, 122, 125, 126, 127

TIP120, 121, 122, 125, 126, 127 Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage

More information

Darlington Transistor TO-3

Darlington Transistor TO-3 Description Designed for use as output devices in complementary general purpose amplifier applications. Features: High gain darlington performance High DC current gain hfe = 1,000 (Minimum) at Ic = 20A

More information

BDW93C, BDW94C Series

BDW93C, BDW94C Series Features Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage- CEO (sus) = (Minimum) Collector-emitter saturation voltage- CE (sat) = 2 (Maximum)

More information

TIP120, 121, 122, 125, 126, 127 Darlington Transistors

TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: Designed for general-purpose amplifier and low speed switching applications. Collector-Emitter sustaining voltage-v CEO(sus) = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126 100V

More information

2N6054/2N6056 Darlington Transistors

2N6054/2N6056 Darlington Transistors Features: General-purpose power amplifier and low frequency switching applications. Low Collector-Emitter Saturation Voltage - V CE(SAT) = 2.0V (Maximum) at I C = 4.0A = 3.0V (Maximum) at I C = 8.0A Monolithic

More information

2N6668 Darlington Power Transistor

2N6668 Darlington Power Transistor Plastic Medium-Power Silicon Transistors are designed for general-purpose amplifier and low speed switching applications. Features: Collector-Emitter Sustaining Voltage V CEO(sus) = 80V (Minimum). Collector-Emitter

More information

MJ15003, MJ A Complementary Power Transistors

MJ15003, MJ A Complementary Power Transistors The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications. Features: High Power

More information

MJ11032, Darlington Power Transistors

MJ11032, Darlington Power Transistors Complementary Silicon Power Darlington Transistors are designed for use as output devices in complementary general purpose amplifier applications. Features: High Gain Darlington performance. High : h FE

More information

MJ15022 / MJ15024 Power Transistors

MJ15022 / MJ15024 Power Transistors The and MJ15024 are silicon power base power transistors designed for high power audio, disk head positioners and other linear applications. Features: High Safe Operating Area. High DC Current Gain h FE

More information

BU426A Power Transistor

BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: Collector-Emitter sustaining voltage - V CEO(sus)

More information

MJE13005 Power Transistor

MJE13005 Power Transistor Switchmode Series NPN s are designed for use in high-voltage, high-speed, power switching in inductive circuits, they are particularly suited for 115 and 220V switchmode applications such as switching

More information

2N4401 & 2N4403 General Purpose Switching Transistors

2N4401 & 2N4403 General Purpose Switching Transistors Features: NPN/PNP Silicon Planar Epitaxial Transistors. General purpose Switching Applications. 2N 4401 Type NPN. 2N 4403 Type PNP. 2N4401 NPN TO92 2N4403 PNP Dimensions Minimum Maximum A 4.32 5.33 B 4.45

More information

BUV48A Power Transistor

BUV48A Power Transistor High Voltage Switching Switchmode Series NPN s are designed for use in high-voltage, highspeed, power switching regulators, converters, inverters, motor control system application. Features: Collector-Emitter

More information

2N2222A High Speed Switching Transistor

2N2222A High Speed Switching Transistor High Speed Switching Transistor Features: NPN Silicon Planar Switching Transistor. Fast switching devices exhibiting short turnoff and low saturation voltage characteristics. Switching and Linear application

More information

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142 ... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)

More information

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage

More information

BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors

BDW42 NPN, BDW46, BDW47 PNP. Darlington Complementary Silicon Power Transistors BDW42 NPN,, BDW47 PNP BDW42 and BDW47 are Preferred Devices Darlington Complementary Silicon Power Transistors This series of plastic, medium power silicon NPN and PNP Darlington transistors are designed

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, ... designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc V CEO(sus) = 60 Vdc

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power

More information

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors

BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching

More information

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector

More information

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C)

2SC5784 2SC5784. High-Speed Switching Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C) Electrical Characteristics (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5784 High-Speed Switching Applications DC-DC Converter Applications Industrial Applications Unit: mm High DC current gain: hfe = 4 to (IC =.5 A) Low collector-emitter

More information

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C)

2SC2873 2SC2873. Power Amplifier Applications Power Switching Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2873 Power Amplifier Applications Power Switching Applications Unit: mm Low saturation voltage: VCE (sat) =. V (max) (IC = A) High-speed switching

More information

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA193 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: f T = 2 MHz (typ.) Complementary to 2SC5171 Absolute

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC26 Power Amplifier Applications Power Switching Applications Industrial Applications Unit: mm Low saturation voltage: V CE (sat) =. V (max)

More information

MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors

MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering

More information

Adc. W W/ C T J, T stg 65 to C

Adc. W W/ C T J, T stg 65 to C Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features High DC Current Gain h FE =

More information

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube 2N6036 2N6039 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications

More information

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code Marking Package Shipment MJD122T4 MJD122-1 MJD127T4 MJD127-1 MJD122 MJD122 MJD127 MJD127 TO-252 (DPAK) TO-251

More information

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz

SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector

More information

50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1.

50 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 300 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS (1) Figure 1. ... designed for use in high power amplifier and switching circuit applications. High Current Capability I C Continuous = 50 Amperes. DC Current Gain h FE = 15 60 @ I C = 25 Adc Low Collector Emitter Saturation

More information

MJD122 MJD127 Complementary power Darlington transistors Features Applications Description

MJD122 MJD127 Complementary power Darlington transistors Features Applications Description MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications General purpose linear and switching

More information

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω

KSE13006/ Symbol Parameter Test Condition Min. Typ. Max. Units BV CEO Collector- Emitter Breakdown Voltage : KSE13006 : KSE13007 R L = 50Ω KSE3006/3007 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3006/3007 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum

More information

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power

More information

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors

TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC

TOSHIBA Transistor Silicon PNP Epitaxial Type TPC TOSHIBA Transistor Silicon PNP Epitaxial Type TPC662 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm High DC current gain: h FE = 2 to 5 (I C =.2 A) Low collector-emitter

More information

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors

MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications.

More information

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive

More information

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

NJVMJD128T4G. NJVMJD128T4G (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications MJD8TG, NJVMJD8TG (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Monolithic Construction

More information

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth

More information

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description 2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier

More information

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS

25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS ... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage V CE(sat) = 1.0 Vdc, (max) at I C = 15 Adc Low Leakage Current I CEX = 1.0 madc (max)

More information

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier

More information

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W

TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W TPC69 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC69 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim

More information

DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage

DARLINGTON 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 70 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS. Collector Emitter Voltage ...designed for general purpose and low speed switching applications. High DC Current Gain h FE = 2500 (typ.) at I C = 4.0 Collector Emitter Sustaining Voltage at 100 madc V CEO(sus) = 80 Vdc (min.) BDX33B,

More information

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features.   MAXIMUM RATINGS THERMAL CHARACTERISTICS General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter

More information

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power

More information

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface

More information

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface

More information

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5612 2SC5612 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage Low Saturation Voltage High Speed : V CBO = 2000 V : V CE (sat)

More information

KSH122 / KSH122I NPN Silicon Darlington Transistor

KSH122 / KSH122I NPN Silicon Darlington Transistor KSH22 / KSH22I NPN Silicon Darlington Transistor Features D-PAK for Surface Mount Applications High DC Current Gain Built-in Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight

More information

2SD2638 2SD2638. Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications. Maximum Ratings (Tc = 25 C)

2SD2638 2SD2638. Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications. Maximum Ratings (Tc = 25 C) SD TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type SD Horizontal Deflection Output for Color TV, Digital TV High Speed Switching Applications Unit: mm High voltage: VCBO = 7 V Low saturation voltage:

More information

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications MJD, NJVMJD (NPN), MJD7, NJVMJD7 (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL

More information

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. CollectorEmitter

More information

SMD Power Inductors. Features: Applications: Figure 1. Figure 2. Page <1> 20/06/11 V1.1

SMD Power Inductors. Features: Applications: Figure 1. Figure 2. Page <1> 20/06/11 V1.1 Features: Ferrite based SMD inductor with lower core loss. Ideal for LCD driver, DSC/DVC, Notebook PC or High density board design. Operating temperature range -55 C to + 130 C. MCSDRH73B - Series High

More information

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C)

2SD1508 2SD1508. Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications. Maximum Ratings (Ta = 25 C) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm High

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4793 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm High transition frequency: f T = MHz (typ.) Complementary to 2SA837 Absolute

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications

More information

MBR10xCT Series TO-220AB

MBR10xCT Series TO-220AB 10x Series Features: Plastic material. Metal silicon junction, majority carrier conduction. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. For

More information

MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS

MJW0281A (NPN) MJW0302A (PNP) Complementary NPN PNP Power Bipolar Transistors 15 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 260 VOLTS 150 WATTS MJW28A (NPN) MJW32A (PNP) Preferred Devices Complementary NPN PNP Power Bipolar Transistors These complementary devices are lower power versions of the popular MJW328A and MJW32A audio output transistors.

More information

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS.  THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc

More information

MUN5311DW1T1G Series.

MUN5311DW1T1G Series. MUNDWTG Series Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single

More information

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors

NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Preferred Devices PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias

More information

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858

TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5858 SC55 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE SC55 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV Unit: mm High Voltage Low Saturation Voltage High Speed : V CBO = 7 V

More information

ST26025A. PNP power Darlington transistor. Features. Applications. Description

ST26025A. PNP power Darlington transistor. Features. Applications. Description ST26025A PNP power Darlington transistor Features High current monolithic Darlington configuration Integrated antiparallel collector-emitter diode Applications Automotive fan control Linear and switching

More information

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UNISONIC TECHNOLOGIES CO., LTD MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator.

More information

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors

TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP) Darlington Complementary Silicon Power Transistors TIP14, TIP141, TIP142, (); TIP145, TIP146, TIP147, () TIP141, TIP142, TIP146, and TIP147 are Preferred Devices Darlington Complementary Silicon Power Transistors Designed for generalpurpose amplifier and

More information

2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel

2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface

More information

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current

More information

NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W

NJL3281D (NPN) NJL1302D (PNP) Complementary ThermalTrak Transistors BIPOLAR POWER TRANSISTORS 15 A, 260 V, 200 W NJL3281D (NPN) NJL132D (PNP) Complementary ThermalTrak Transistors The ThermalTrak family of devices has been designed to eliminate thermal equilibrium lag time and bias trimming in audio amplifier applications.

More information

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications

MJD41C (NPN), MJD42C (PNP) Complementary Power Transistors. DPAK for Surface Mount Applications MJDC (NPN), MJDC (PNP) Complementary Power Transistors for Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS

MJD6039, NJVMJD6039T4G. Darlington Power Transistors. DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 4 AMPERES, 80 VOLTS, 20 WATTS Darlington Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and

More information

Dual Bias Resistor Transistors

Dual Bias Resistor Transistors DATA SHEET SEMICONDUCTOR MUN5DW Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor

More information

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors

MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear

More information

Surface Mount Resistor Kit 0603 Case Size

Surface Mount Resistor Kit 0603 Case Size Specifications Table Type Power Rating Resistance Tolerance Nominal Resistance MC 0603 0.0625W (1/16W) ±1% 10Ω Ratings: Type MC 0603 Power Rating 0.0625W (1/16W) Max. Working Voltage 50V Max. Overload

More information

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications

MJD122 (NPN) MJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications MJD () MJD7 () Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead Formed for Surface Mount

More information

NSTB1002DXV5T1G, NSTB1002DXV5T5G

NSTB1002DXV5T1G, NSTB1002DXV5T5G NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009

KSE13008/ Symbol Parameter Test Condition Min. Typ. Max. Units V CEO (sus) Collector-Emitter Sustaining Voltage : KSE13008 : KSE13009 KSE3008/3009 High oltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control KSE3008/3009 TO-220.Base 2.Collector 3.Emitter NPN Silicon Transisor Absolute Maximum

More information

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2406. JEDEC Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon NPN Triple Diffused Type Power Amplifier Applications Unit: mm High power dissipation: P C = W () Good h FE linearity Absolute Maximum Ratings () Characteristics Symbol Rating

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: Cob = 2.5 pf (typ.) High Transition

More information

P-Channel Enhancement Mode Vertical D-MOS Transistor

P-Channel Enhancement Mode Vertical D-MOS Transistor Features: Voltage Controlled P-Channel Small signal switch High Density Cell Design for Low RDS(ON) High Saturation Current SOT-23 Applications: Line Current Interrupter in Telephone Sets Relay, High Speed

More information

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145. JEDEC TO-92MOD Storage temperature range T stg 55 to 150 C TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA45 Audio Frequency Amplifier Applications Unit: mm Complementary to 2SC275. Small Collector Output Capacitance: C ob = 2.5 pf (typ.) High

More information

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, ... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc

More information

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD1508 2SD8 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor) 2SD8 Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit:

More information

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30

More information

Large Snap-In Electrolytic Capacitors HPR Series

Large Snap-In Electrolytic Capacitors HPR Series Features: Highly reliable capacitors that has characteristics of high temperature 105ºC, and can withstand high ripple current Suitable for filter of industrial equipment, such as automatic machines, computers

More information

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product

More information