NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
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- Osborn Kelley
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1 Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the TO92 package which is designed for through hole applications. NPN SILICON BIAS RESISTOR TRANSISTOR MAXIMUM RATINGS (T A = 25 C unless otherwise noted) PIN 3 COLLECTOR (OUTPUT) Rating Symbol Value Unit R1 Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 0 madc Total Power T A = 25 C (Note 1.) Derate above 25 C P D mw mw/ C PIN 2 BASE (INPUT) R2 PIN 1 EMITTER (GROUND) THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (surface mounted) R θja 357 C/W Operating and Storage Temperature Range Maximum Temperature for Soldering Purposes, Time in Solder Bath T J, T stg DEVICE MARKING AND RESISTOR VALUES 55 to +150 T L 260 Device Marking R1 (K) R2 (K) Shipping /Box 1. Device mounted on a FR4 glass epoxy printed circuit board using the minimum recommended footprint. C C Sec DTC1 xxx Y WW CASE 29 TO92 (TO226) STYLE 1 MARKING DIAGRAM DTC1xxx YWW = Specific Device Code = (See Table) = Year = Work Week Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 January, 2001 Rev Publication Order Number: /D
2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS CollectorBase Cutoff Current (V CB = 50 V, I E = 0) I CBO 0 nadc CollectorEmitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nadc EmitterBase Cutoff Current I EBO 0.5 madc (V EB = 6.0 V, I C = 0) CollectorBase Breakdown Voltage (I C = µa, I E = 0) V (BR)CBO 50 Vdc CollectorEmitter Breakdown Voltage (Note 2.) (I C = 2.0 ma, I B = 0) V (BR)CEO 50 Vdc ON CHARACTERISTICS (Note 2.) DC Current Gain (V CE = V, I C = 5.0 ma) h FE CollectorEmitter Saturation Voltage (I C = ma, I E = 0.3 ma) / (I C = ma, I B = 0.3 ma) / (I C = ma, I B = 5 ma) (I C = ma, I B = 1 ma) // (I C = ma, I B = 1 ma) / V CE(sat) 5 Vdc Output Voltage (on) (V CC = 5.0 V, V B = 2.5 V, R L = kω) (V CC = 5.0 V, V B = 3.5 V, R L = kω) 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% V OL Vdc 403
3 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit Output Voltage (off) V OH 4.9 Vdc (V CC = 5.0 V, V B = 0.5 V, R L = kω) (V CC = 5.0 V, V B = 0.05 V, R L = kω) (V CC = 5.0 V, V B = 5 V, R L = kω) Input Resistor R kω Resistor Ratio // / // R 1 /R
4 TYPICAL ELECTRICAL CHARACTERISTICS θ Figure 1. Derating Curve Figure 2. V CE(sat) versus I C Figure 3. DC Current Gain Figure 4. Output Capacitance Figure 5. V CE(sat) versus I C Figure 6. VCE(sat) versus I C 405
5 TYPICAL ELECTRICAL CHARACTERISTICS Figure 7. V CE(sat) versus I C Figure 8. DC Current Gain Figure 9. Output Capacitance Figure. Output Current versus Input Voltage Figure 11. Input Voltage versus Output Current 406
6 TYPICAL ELECTRICAL CHARACTERISTICS Figure 12. V CE(sat) versus I C Figure 13. DC Current Gain Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage Figure 16. Input Voltage versus Output Current 407
7 TYPICAL ELECTRICAL CHARACTERISTICS Figure 17. V CE(sat) versus I C Figure 18. DC Current Gain Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage Figure 21. Input Voltage versus Output Current 408
8 TYPICAL APPLICATIONS FOR NPN BRTs µ Figure 22. Level Shifter: Connects 12 or 24 Volt Circuits to Logic Figure 23. Open Collector Inverter: Inverts the Input Signal Figure 24. Inexpensive, Unregulated Current Source 409
Bias Resistor Transistor
SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
DATA SHEET P D * mw C/W. Packing. Packing SOT-23 SOT /Reel 3000/Reel SOT-23 SOT /Reel 3000/Reel SOT-23.
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7X = Device Marking. Symbol
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2SC6033 2SC6033. High-Speed Swtching Applications DC-DC Converter Applications Storobe Flash Applications. Maximum Ratings (Ta = 25 C)
TOSHIBA Transistor Silicon NPN Epitaxial Type SC633 HighSpeed Swtching Applications DCDC Converter Applications Storobe Flash Applications High DC current gain: hfe = to 4 (IC =.3 A) Low collectoremitter
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS
, Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are PbFree
P D P D mw mw/ C Watts mw/ C T J, T stg 55 to +150 C (1) 200 C/W. Characteristic Symbol Min Typ Max Unit.
NPN Silicon ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45 Vdc Emitter Base Voltage V EBO 6.5 Vdc Collector
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
MJL4281A (NPN) MJL4302A (PNP)
MJL428A (NPN) MJL42A (PNP) Preferred Device Complementary NPNPNP Silicon Power Bipolar Transistors The MJL428A and MJL42A are PowerBase power transistors for high power audio. Features 3 V CollectorEmitter
TIP2955 PNP SILICON POWER TRANSISTOR
Designed for Complementary Use with the TIP3055 Series 90 W at 5 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available B C SOT-93 PACKAGE (TOP VIEW) 1 E 3 Pin is
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP)
MJD31, MJD31C (NPN), MJD32, MJD32C (PNP) MJD31C and MJD32C are Preferred Devices Complementary Power Transistors For Surface Mount Applications Designed for general purpose amplifier and low speed switching
NJT4031N, NJV4031NT1G, NJT4031NT3G. Bipolar Power Transistors. NPN Silicon NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
NJTN, NJVNTG, NJVNTG Bipolar Power Transistors NPN Silicon Features Epoxy Meets UL 9, V @.5 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
TIP120, TIP121, TIP122 (NPN); TIP125, TIP126, TIP127 (PNP) Plastic Medium-Power Complementary Silicon Transistors
TIP120, TIP121, TIP122 (); TIP125, TIP126, TIP127 () Preferred Devices Plastic MediumPower Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon
MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and
BCR BCR112/F BCR112W. Type Marking Pin Configuration Package BCR112 BCR112F BCR112W. WFs WFs WFs 3=C 3=C 3=C 2=E 2=E 2=E - - -
BCR... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =4.7kΩ, R =4.7kΩ) BCRU: Two internally isolated transistors with good matching
SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
MJD122, NJVMJD122 (NPN), MJD127, NJVMJD127 (PNP) Complementary Darlington Power Transistor. DPAK For Surface Mount Applications
MJD, NJVMJD (NPN), MJD7, NJVMJD7 (PNP) Complementary Darlington Power Transistor For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Features Lead
BC846, BC847, BC848. General Purpose Transistors. NPN Silicon
General Purpose Transistors NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC7/SOT323 which is designed for low power surface mount applications.
NSS40201LT1G NSV40201LT1G. 40 V, 2.0 A, Low V CE(sat) NPN Transistor. 40 VOLTS, 2.0 AMPS NPN LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 44 m
NSS42LTG, NSV42LTG 4 V, 2. A, Low V CE(sat) NPN Transistor ON Semiconductor s e 2 PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage
MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product
BCR BCR108/F BCR108T/W BCR108S. Type Marking Pin Configuration Package BCR108 BCR108F 2=E 2=E SOT23 TSFP-3 BCR108S BCR108W 3=C 3=C - - 1=B 1=B
BCR8... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =. kω, R =47 kω) BCR8S: Two internally isolated transistors with good matching