BD895, BD897, BD899, BD901 NPN SILICON POWER DARLINGTONS

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1 ,,, Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with BD896, BD898, BD900 and BD90 70 W at 5 C Case Temperature 8 A Continuous Collector Current Minimum h FE of 750 at 3V, 3A B C E TO-0 PACKAGE (TOP VIEW) 1 3 Pin is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 5 C case temperature (unless otherwise noted) Collector-base voltage () Collector-emitter voltage () NOTES: 1. Derate linearly to 150 C case temperature at the rate of 6 W/ C.. Derate linearly to 150 C free air temperature at the rate of 16 mw/ C. RATING SYMBOL VALUE UNIT Base-emitter voltage V EBO 5 V Continuous collector current 8 A Continuous base current I B 0.3 A Continuous device dissipation at (or below) 5 C case temperature (see Note 1) P tot 70 W Continuous device dissipation at (or below) 5 C free air temperature (see Note ) P tot W Operating free-air temperature range T A -65 to +150 C Operating junction temperature range T j -65 to +150 C Storage temperature range T stg -65 to +150 C V CBO V CEO V V Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1

2 ,,, electrical characteristics at 5 C case temperature (unless otherwise noted) V (BR)CEO EO BO I EBO h FE V CE(sat) V BE(on) V F PARAMETER TESONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Parallel diode forward voltage = ma (see Note 3) V CE = 30 V V CE = 30 V V CE = 40 V V CE = 50 V V CB = 45 V V CB = V V CB = V V CB = V V CB = 45 V V CB = V V CB = V V CB = V = C = C = C = C V EB = 5 V = 0 (see Notes 3 and 4) ma V CE = 3 V = 3 A (see Notes 3 and 4) 750 I B = 1 ma = 3 A (see Notes 3 and 4).5 V V CE = 3 V = 3 A (see Notes 3 and 4).5 V I F = 8 A 3.5 V NOTES: 3. These parameters must be measured using pulse techniques, t p = 300 µs, duty cycle %. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts V ma ma thermal characteristics PARAMETER MIN TYP MAX UNIT R θjc Junction to case thermal resistance 1.79 C/W R θja Junction to free air thermal resistance 6.5 C/W resistive-load-switching characteristics at 5 C case temperature PARAMETER TESONDITIONS MIN TYP MAX UNIT t on Turn-on time = 3 A I B(on) = 1 ma I B(off) = -1 ma 1 µs t off Turn-off time V BE(off) = -3.5 V R L = 10 Ω t p = 0 µs, dc % 5 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

3 ,,, TYPICAL CHARACTERISTICS h FE - Typical DC Current Gain TYPICAL DC CURRENT GAIN COLLECTOR CURRENT V CE = 3 V t p = 300 µs, duty cycle < % TCS130AD = -40 C = 5 C = C V CE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT t p = 300 µs, duty cycle < % I B = / = C TCS130AB = -40 C = 5 C Figure 1. Figure. V BE(sat) - Base-Emitter Saturation Voltage - V BASE-EMITTER SATURATION VOLTAGE COLLECTOR CURRENT = -40 C = 5 C = C I B = / t p = 300 µs, duty cycle < % Figure 3. TCS130AC 3

4 ,,, MAXIMUM SAFE OPERATING REGIONS 10 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA SAS130AD V CE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION CASE TEMPERATURE TIS130AB P tot - Maximum Power Dissipation - W Case Temperature - C Figure 5. 4

5 ,,, TO-0 3-pin plastic flange-mount package MECHANICAL DATA This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. TO0 4,70 4,0 3,96 10,4 1,3 ø 3,71 10,0,95 1,3,54 see Note B 6,6 6,0 15,90 14,55 see Note C 6,1 3,5 0,97 0, ,70 1,07 14,1 1,7,74,34 0,64 0,41 5,8 4,88,90,40 VERSION 1 VERSION ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version, 17.6 mm. MDXXBE 5

6 ,,, IMPORTANT NOTICE Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS. Copyright 1997, Power Innovations Limited 6