: PNPN DB3 : MCRB25D MCRB25M MCRB25N MCRB25H. Pin Polarity Circuit Diagram TO-220F, TO-220AB, TO-263 (D 2 PAK)
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- Evelyn Copeland
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1 Designed primarily for half wave ac control applications, such asmotor controls, heating controls, and power supplies; or whereverhalf wave, silicon gate controlled devices are needed. Blocking Voltage to VV On-State Current Rating of Amperes RMS igh Surge Current Capability3A Rugged, Economical TO AB Package Glass Passivated Junctions for Reliability and Uniformity Minimum and Maximum Values of I GT, V GT, and I Specified forease of Design igh Immunity to dv/dtv/sec : PNPN DB3 : / BT-RBT-RMCRMMCRNMCR6MMCR6N TYN6TYN8TYNTYN66TYN86TYN6TYN6 TYN6TYNTYNTYN6TYN8TYNTYN S6SSCPC6A Product Model Reference & Naming A V 6V V V V I GT TO-F F MCRFD MCRFM MCRFN MCRF MCRFG TO-AB MCRD MCRM MCRN MCR MCRG 3mA TO-63 B MCRBD MCRBM MCRBN MCRB MCRBG Remarks () PINNING: Insulated Package Pin in Symbol and Description TO-F, TO-AB, TO-63 (D PAK) 3 K A G Cathode Anode Gate - Pin Polarity Circuit Diagram TO-F TO-AB 3 G (3) D PAK TO-63 Tab A () K () MCR N AOAI ELECTRONICS CO.,LTD. SCR Microelectronics SCR F: TO-F P: TO-AB P: No letters in TO-AB B: TO-63 B: (D PAK) 8=8A =A =A 6=6A =A =A D=V M=6V N=V =V G=V 7 kkg@kkg.com.cn AOAI ELECTRONICS CO., LTD. MCR_Series SCRs
2 ABSOLUTE RATINGs (Limiting Values) SYMBOL Paramenter & Test Conditions Value Unit I T(RMS) On-State RMS Current ( Conduction Angles, T C =) I TSM Peak Non-Repetitive Surge Current (½ Cycle, Sine Wave) (6z, T j =) 3 A I GM Forward Peak Gate Current (Pulse WidthμS, T C =). I t Circuit Fusing Consideration (t=8.3ms) 373 Ases P GM P G(AV) Forward Peak Gate Power (Pulse WidthμS, T C =) Forward Average Gate Power (t=8.3ms, T C =). W V DRM V RRM Peak Repetitive OffState Voltage (T j =, Sine Wave, ~6z; Gate Open)See Reference Feature Description ~ V T j Operating Range -~+ T stg Storage Temperature Range -~+ T L Maximum Lead Temperature for Soldering Purposes /8,from Case for Seconds 6 V DRM and V RRM for all types can be applied on a continuous basis. Ratingsapply for zero or negative gate voltage; positive gate voltage shall not beapplied concurrent with negative potential on the anode. Blocking voltagesshall not be tested with a constant current source such that the voltageratings of the devices are exceeded. ELECTRICAL CARACTERISTICs (Tj= Unless Otherwise Noted) SYMBOL Paramenter & Test Conditions Min Typ Max Unit I GT V D =V, R L = ( T j =) 3 I olding Current (I T =ma, V D =V DC ) Gate Open 3 I L Latching Current (V D =V, I G =3mA) T C = 3 ma I DRM I RRM Peak Repetitive Forward or Reverse Blocking Current (V AK =Rated V DRM or V RRM, Gate Open) T j = T j =.. V GT V TM Gate Trigger Voltage (V D =V, R L =, T j =) Peak Forward On-State Voltage (I TM =A T j =) V DYNAMIC CARACTERISTICS SYMBOL Paramenter & Test Conditions Min Typ Max Unit Critical Rate of Rise of Off State Voltage dv/dt (V D =67% of Rated V DRM, Exponential Waveform, Gate Open, T J =) V/μs di/dt Critical Rate of Rise of On State Current (I PK =A, P W =3sec, dig/dt=a/sec, I GT =ma) A/μs R th(j-c) Thermal ResistanceJunctiontoCase R th(j-a) Thermal ResistanceJunctiontoAmbient. 6. /W Indicates Pulse Test: Pulse Width. ms, Duty Cycle %. R GK = included in measurement. Does not include R GK in measurement. AOAI ELECTRONICS CO., LTD. 7 kkg@kkg.com.cn MCR_Series SCRs
3 Voltage Current Characteristic of SCR Voltage Current Characteristic of SCR + Current Anode + Symbol VDRM IDRM VRRM IRRM VTM I Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage olding Current IRRM at VRRM on state Reverse Blocking Region (off state) Reverse Avalanche Region VTM I + Voltage IDRM at VDRM Forward Blocking Region (off state) Anode., GATE TRIGGER CURRENT (ma) I GT Figure. Typical Gate Trigger Current versus, GATE TRIGGER VOLTAGE (V) V GT Figure. Typical Gate Trigger Voltage versus AOAI ELECTRONICS CO., LTD. 37 kkg@kkg.com.cn MCR_Series SCRs
4 IT, INSTANTANEOUS ON STATE CURRENT (A) C C C Z R R(t) JC(t) JC VT, INSTANTANEOUS ON STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. Typical On State Characteristics Figure. Transient Thermal Response R(t) TRANSIENT TERMAL R (NORMALIZED), OLDING CURRENT (ma), LATCING CURRENT (ma) I I L Figure. Typical olding Current versus Figure 6. Typical Latching Current versus, CASE TEMPERATURE ( C) T C 3 9 = = Conduction Angle 6 IT(RMS), RMS ON STATE CURRENT (AMPS) 8 dc, AVERAGE POWER DISSIPATION (WATTS) P (AV) = Conduction Angle = IT(AV), AVERAGE ON STATE CURRENT (AMPS) 6 8 dc Figure 7. Typical RMS Current Derating Figure 8. On State Power Dissipation 7 kkg@kkg.com.cn AOAI ELECTRONICS CO., LTD. MCR_Series SCRs
5 PACKAGE MECANICAL DATA mm & inch TO-AB PACKAGE DIMENSIONS Marking Dimensions REF Millimeters Inches Min. Max. Min. Max. A B C C C D E F G L 3..6 L L XXXXX X KKG aabb : AOAI XXXXXXXXXX: Part Number KKG: Registered trademark aa: Year bb: Week (~3) LOGO in The upper left corner mark : XXXXXXXXXX: KKG: aa: bb: (~3) LOGO TO-F PACKAGE DIMENSIONS Marking Dimensions REF Millimeters Inches Min. Max. Min. Max. A B C C C D E F G L 3.63 TYP.3 L L3 3.3 TYP.3 V XXXXXX KKG aabb : AOAI XXXXXXXXXX: Part Number KKG: Registered trademark aa: Year bb: Week (~3) LOGO in The upper left corner mark : XXXXXXXXXX: KKG: aa: bb: (~3) LOGO Packaging Specifications() TO-AB TO-F REF. Tube. BOX Carton Tube. BOX Carton QTY Pcs, Pcs, Pcs Pcs, Pcs, Pcs 7 kkg@kkg.com.cn AOAI ELECTRONICS CO., LTD. MCR_Series SCRs
6 PACKAGE DIMENSIONS TO-63D PAKPACKAGE INFORMATIONTO-63: mm.3 max. max. max max... (x).8 max (x) XXXXXX KKG aabb Packaging Specifications TO-63 D PAK (Pcs/Tub, Kpcs/BOX, Kpcs/Carton) (Pcs/Reel, 8Kpcs/Carton) 67 kkg@kkg.com.cn AOAI ELECTRONICS CO., LTD. MCR_Series SCRs
7 Manufacturers version information 6-7- KKG Product Data-. -- KKG Product Data KKG Product Data-. KKG WARN, Letters, patterns, are officially registered my trademark counterfeiting, theft are all violations, violators will be held liable! SENZEN AOAI ELECTRONICS CO., LTD. TEL: TEL: FAX: : AOAI ELECTRONICS CO., LTD. MCR_Series SCRs
MCR25DG, MCR25MG, MCR25NG
MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MCR69-2, MCR69-3. Thyristors. Surface Mount V > MCR69-2, MCR69-3. Description. Designed for overvoltage protection in crowbar circuits.
1 2 3 Thyristors MCR69-2, MCR69-3 Pb Description Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and Reliability Center-Gate
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MAC12HCDG, MAC12HCMG, MAC12HCNG
MAC2HCDG, MAC2HCMG, MAC2HCNG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full wave, silicon gate controlled
MCR8NG. Thyristors. Surface Mount 600V - 800V > MCR8NG. Description
Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled devices are needed.
C122F1G. Thyristors. Surface Mount 50V > C122F1G. Description
Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
MCR12DG, MCR12MG, MCR12NG
MCR12DG, MCR12MG, MCR12NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
UNISONIC TECHNOLOGIES CO., LTD
MCR00 UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 3 2 SOT-23 SOT-223 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
C106 Series High Sensitive SCRs
is lassivated PNPN devices designed for high volume consumerapplications such as temperature, light, and speed control; process andremote control, and warning systems where reliability of operation isimportant.
MCR218-2G, MCR218-4G, MCR218-6G
MCR218-2G, MCR218-4G, MCR218-6G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled,
MCR8N. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever
MCR. 1A (Amperes) MCR22 Series 1.5A. Product Model Reference & Naming TO-92 MCR22-8 MCR22-10 MCR22-12 MCR22-12S. 200μA MCR22-6S MCR22-12M.
1.5 Series SCR: 1.5 igh Sensitive SCRs DESCRIPTION ighly sensitive triggering levels, the BT169 Series SCRs is suitable for all applications, where the available gate current is limited, such as capacitive
Silicon Controlled Rectifiers
MCR692, MCR693 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features Glass-Passivated Junctions for Greater Parameter Stability and
MCR100 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
MCR0 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers,
MCR8SDG, MCR8SMG, MCR8SNG
MCR8SDG, MCR8SMG, MCR8SNG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
2N6504 Series. Thyristors. Surface Mount V > 2N6504 Series. Description
2N6504 Series Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions for
MCR8DSM, MCR8DSN. Thyristors. Surface Mount 600V - 800V > MCR8DSM, MCR8DSN G K. Description
MCR8DSM, MCR8DSN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS SOT-89 3 2 SOT-23 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
MCR08B, MCR08M. Thyristors. Surface Mount 600V - 800V > MCR08B, MCR08M G K. Description
MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
2N6400. Thyristors. Surface Mount V > 2N6400. Description
2N6400 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices
C106 Series. Sensitive Gate Silicon Controlled Rectifiers
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and
2N6504 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 25 AMPERES RMS 50 thru 800 VOLTS
Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits.
MCR12DCM, MCR12DCN. Thyristors. Surface Mount 400V - 800V > MCR12DCM, MCR12DCN G K. Description
MCR12DCM, MCR12DCN Pb Description This thyristor is designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon
MAC12D, MAC12M, MAC12N
MAC12D, MAC12M, MAC12N Pb Description Designed for high performance full wave ac control applications where high noise immunity and commutating di/dt are required. Features Blocking Voltage to 800 Volts
2N6394. Thyristors. Surface Mount V > 2N6394. Description
2N6394 Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. Features Glass Passivated Junctions for Greater Parameter Uniformity
A 80 I GT 80A. 3Q-TRIACs IGT 80A. BTA80-BW Series Specially Varieties 3Q-Triacs
DESCRIPTION Triac provides good commutation capability, which is suitable for general purpose C switching and voltage regulation, and can be used in static relays, heating regulation, induction motor stating
MCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
MCR8DSM, MCR8DSN. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS VOLTS
Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control;
MAC08BT1, MAC08MT1. Thyristors. Surface Mount 200V - 600V > MAC08BT1, MAC08MT1. Description
MAC08BT1, MAC08 Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Sensitive
MAC8DG, MAC8MG, MAC8NG
MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled,
MAC210A8, MAC210A10. Thyristors. Surface Mount 400V - 800V > MAC210A8, MAC210A10. Description
MAC210A8, MAC210A10 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full wave silicon gate
2N6400 Series. Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 16 AMPERES RMS 50 thru 800 VOLTS
Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever halfwave silicon
BTB08-600BW3G, BTB08-800BW3G
BTB08-600BW3G, BTB08-800BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
MAC16DG, MAC16MG, MAC16NG
MAC6DG, MAC6MG, MAC6NG Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking Voltage to 800
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G
BTB16-600BW3G, BTB16-700BW3G, BTB16-600BW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
BTA16-600BW3G, BTA16-800BW3G,
BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
MCR106-6, MCR Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 AMPERES RMS 400 thru 600 VOLTS
MCR106-6, MCR106-8 Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume consumer applications such as temperature, light and speed
A I GT. BTA40-BTA41 Series Specially Varieties 3Q-Triacs TG-C TG40C60 TG40C80 RD-91 TOP3. 3Q-TRIACs. Product Model Reference & Naming
40 Specially Varieties 3Q-Triacs DESCRIPTION High current density due to double mesa technology; SIPOS and Glass Passivation. BT40, BT41, TG40C Series triacs is suitable for general purpose C switching.
BTA08-800CW3G. Thyristors. Surface Mount 800V > BTA08-800CW3G. Description
BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
MCR12DSM, MCR12DSN. Thyristors. Surface Mount 100V -600V > MCR12DSM, MCR12DSN G K. Description
MCR12DSM, MCR12DSN Thyristors Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control; CDI (Capacitive
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
C106 Series. Thyristors. Surface Mount > V > C106 Series TO 225AA CASE 77 STYLE 2. Description
C106 Series Pb Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability
S1VM02600A TO-92 (TO-226AA) SCRs 1.5 AMPERES RMS 600 VOLTS. Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES
LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 6 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic
BTA30H-600CW3G, BTA30H-800CW3G
BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
MCR70xA Series. Thyristors. Surface Mount 100V -600V > MCR70xA Series G K. Description
MCR70x Series Pb Description PNPN Componants designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where
BTA25-600CW3G, BTA25-800CW3G
BTA25-600CW3G, BTA25-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage
MC4DCM, MAC4DCN. Thyristors. Surface Mount 600V - 800V > MC4DCM, MAC4DCN. Description
MCDCM, MACDCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size Surface
2N6344A, 2N6348A, 2N6349A
2N6344A, 2N6348A, 2N6349A Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon
MCR703A Series. Thyristors. Surface Mount 100V -600V > MCR703A Series G K. Description
MCR703 Series Pb Description PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers
RoHS COMPLIANT 800V BT BT131M-800D. BT E BT E BT E "E" 10mA. BT EA1 BT EA1 BT EA1 "E" 10mA BT131M-800
BT3 Series RoS A TRIAC: A Product Model Reference & Naming - - A 600V 800V 000V I GT - - BT3-600 BT3-800 BT3-000 BT3-600 BT3-800 BT3-000 "" 5mA BT3-600 BT3-800 BT3-000 "" 0mA BT3-600A BT3-800A BT3-000A
MAC228A. Thyristors. Surface Mount 400V - 800V > MAC228A. Description
MAC228A Pb Description Designed primarily for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor controls, and other power switching
T2322B. Thyristors Surface Mount 200V > T2322B TO 225AA CASE 77 STYLE 2. Description
T2322B Pb Description Designed primarily for ac power switching. The gate sensitivity of these triacs permits the use of economical transistorized or integrated circuit control circuits, and it enhances
MAC3030 8G. Triacs. Silicon Bidirectional Thyristors TRIACS 8.0 AMPERES RMS 250 VOLTS
Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever fullwave silicon
C106 Series. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 4 A RMS, Volts
C6 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light,
T12M5T-B SERIES TRIACS 12 AMPERES RMS 600 VOLTS. Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES TO-220AB MECHANICAL DATA
LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 2 AMPERES RMS 600 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and other Blocking Voltage to
BTA40 and BTA/BTB41 Series
STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS
MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power
BTA16-600CW3G, BTA16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTA6-600CW3G, BTA6-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and high commutating di/dt are required. Features
Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation
LDR3 Outline Dimensions. Dimension Inches Millimeters
OUTLINE DRAWING Dual SCR Module 5 Amperes / 16-18 Volts Ordering Information: Select the complete eight-digit module part number from the table below. Example: LDR3165 is a 16V, 5 Ampere Dual SCR Isolated
MCR106-6, MCR Thyristors. Surface Mount 400V - 600V > MCR106-6, MCR106-8 TO 225AA CASE 77 STYLE 2 G K. Description
MCR106-6, MCR106-8 Pb Description PNPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
MAC4DCM, MAC4DCN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
MAC4DSM, MAC4DSN. Triacs. Silicon Bidirectional Thyristors TRIACS 4.0 AMPERES RMS VOLTS
Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control.
2N6344. Thyristors. Surface Mount V > 2N6344. Description
2N6344 Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled
Silicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
TN1610H-6T. High temperature 16 A SCRs. Description. Features. Applications
High temperature 16 A SCRs Datasheet production data Description Thanks to a junction temperature T j up to 150 C and a non-isolated TO-220 package, the TN1610H-6T offers high thermal performance operation
China - Germany - Korea - Singapore - United States - smc-diodes.com
SCT1275CS 75A SCRs Circuit Diagram TO-247S Description With high ability to withstand the shock loading of large current, SCT1275CS provide high dv/dt rate with high frequency noise immunity. Products
TN1605H-6G. High temperature 16 A SCRs. Description. Features. Applications
High temperature 16 A SCRs Datasheet - production data G A A K Description Designed with high immunity switching to external surges, this device offers robust switching up to its 150 C maximum Tj. The
BTA12-600C4G, BTA12-800C4G. Triacs Silicon Bidirectional Thyristors. TRIACS 12 AMPERES RMS 600 thru 800 VOLTS
BTA12-6C4G, BTA12-8C4G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features
T9G Phase Control Thyristor
The T9G0 SCR employs a Center Fired amplifying gate structure which allows the SCR to be reliably operated at high di/dt and high dv/dt conditions in phase control applications. FEATURES: Low On-State
BTB16-600CW3G, BTB16-800CW3G. Triacs Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-CW3G, BTB-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking
T x V 25 A Snubberless Triac. Description. Features. Applications. Benefits
1200 V 25 A Snubberless Triac Description Datasheet production data Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable
Value Unit I T(RMS) RMS on-state current A A Tj = 25 C I FSM current (Tj initial = 25 C)
MAIN FEATURES: DIODE / SCR MODULE Symbol Value Unit I T(RMS) 50-70-85 A V DRM /V RRM 800 and 1200 V I GT 50 and 100 ma DESCRIPTION Packaged in ISOTOP modules, the MDS Series is based on the half-bridge
Reverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
T8M35T-B SERIES TRIACS 8 AMPERES RMS 600 VOLTS. Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES MECHANICAL DATA
LITE-ON SEMICONDUCTOR Triacs Sillicon Bidirectional Thyristors TRIACS 8 AMPERES RMS 600 VOLTS FEATURES Blocking Voltage to 600 Volts On-State Current Rating of 8.0 Amperes RMS at 0 Uniform Gate Trigger
Symbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6 V I T(RMS) = 5 A I TSM = 6 A I GT = 35mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 5A) Gate Trigger Current : 35mA High commutation
T Phase Control Thyristor
The T820 is a high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR to be reliably operated at high di/dt and dv/dt conditions in various phase control applications.
PINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G. Triacs. Silicon Bidirectional Thyristors. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS
BTB-BW3G, BTB-7BW3G, BTB-8BW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
2N6344. Silicon Bidirectional Thyristors. TRIACS 8 AMPERES RMS 600 thru 800 VOLTS
Preferred Device Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever
BTA A Snubberless Triacs. Features. Description. I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma
20 A Snubberless Triacs Datasheet production data Features I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma Description G A2 A1 The Triacs use high performance glass passivated
T12M50T600B TRIACS 12 AMPERES RMS 600 VOLTS. Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES MECHANICAL DATA
LITE-ON SEMICONDUCTOR Triacs Sillicon Bidirectional Thyristors TRIACS 12 AMPERES RMS VOLTS FEATURES Blocking Voltage to Volts On-state Current Rating of 12 Amperes RMS at 9 Uniform Gate Trigger Currents
ST180S SERIES 200A. Stud Version PHASE CONTROL THYRISTORS. Features. Typical Applications. Major Ratings and Characteristics
ST180S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator (Also available with glass-metal seal up to 1200V) International standard
T9S0 Phase Control Thyristor
The T9S0 SCR employs a Center Fired amplifying gate structure which allows the SCR to be reliably operated at high di/dt and high dv/dt conditions in phase control applications. FEATURES: Low On-State
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
BTA08-800CW3G. Triacs. Silicon Bidirectional Thyristors TRIACS 8 AMPERES RMS 800 VOLTS
BTA8-8CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
TS420. Sensitive gate 4 A SCRs
Sensitive gate 4 A SCRs Datasheet - production data Features On-state RMS current: 4 A Repetitive peak off-state voltage (VDRM, VRRM) 600 V Triggering gate current, IGT 0.2 ma Description Thanks to highly
T3035H-8I. 30 A V TO-220AB insulated H-series Snubberless Triac. Datasheet. Features. Applications. Description. TO-220AB insulated
Datasheet 3 A - 8 V TO-22AB insulated H-series Snubberless Triac G A2 A1 Features 3 A high current Triac 8 V symmetrical blocking voltage 15 C maximum junction temperature T j Three triggering quadrants
China - Germany - Korea - Singapore - United States - smc-diodes.com
SCT616/816 Series 16A SCRs Circuit Diagram TO-B(Non-Ins) Description With high ability to withstand the shock loading of large current, SCT616/816 series of silicon controlled rectifiers provide high dv/dt
TM8050H-8W. 80 A high temperature Thyristor (SCR) Applications
80 A high temperature Thyristor (SCR) Datasheet - production data G TAB = A A K Applications Solid state switch Battery charging system Variable speed motor drive Industrial welding systems AC-DC rectifier
2N6071A/B Series. Thyristors. Surface Mount 200V-600W > 2N6071A/B Series. Description
2N6071A/B Series Pb Description Designed primarily for full-wave AC control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate
ST300S SERIES 300A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25158 rev. B 01/94. case style TO-209AE (TO-118)
ST300S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4-16UNF2A
TN B. Standard 15 A SCRs. Description. Features. Application. Benefits
Standard 15 A SCRs Description Datasheet - production data The TN1515-600B is a 15 A thyristor SCR housed in DPAK package. It fits any high voltage application that requires a high power density and compact
R L = 60 Ω. DC Gate Trigger Voltage. = 1 kω T J = 125 C = V DRM. / V RRM Exponential Waveform R GK I G. = 10mA PW = 15μsec I T. = 3.
S602ECS RoHS Description This new.8 A sensitive gate SCR in an TO-92 package with a GAK pin out, offers a high static component series with a high static dv/dt and a low turn off (t q ) time by the use