MCR100 Series Preferred Device. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 0.8 A RMS 100 thru 600 V
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1 MCR0 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA package which is readily adaptable for use in automatic insertion equipment. Features Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits Blocking Voltage to 600 V OnState Current Rating of 0.8 Amperes RMS at 80 C High Surge Current Capability A Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design Immunity to dv/dt 20 V/ sec Minimum at C Glass-Passivated Surface for Reliability and Uniformity PbFree Packages are Available* A SCRs 0.8 A RMS 0 thru 600 V G K MARKING DIAGRAM MCR 0x AYWW 2 3 TO92 (TO226) CASE 029 STYLE x A Y WW = Specific Device Code = Assembly Location = Year = Work Week 2 3 PIN ASSIGNMENT Cathode Gate Anode
2 MCR0 Series ORDERING INFORMATION MCR0003 MCR0004 MCR0006 MCR0008 MCR03RL MCR06RL MCR06RLRA MCR06RLRM MCR06ZL MCR08RL MCR0003G MCR0006G MCR0008G MCR03RLG MCR06RLG Device MCR06RLRAG MCR06RLRMG MCR06ZLG MCR08RLG Package Code TO92 (TO226) TO92 (TO226) (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD80/D. MAXIMUM RATINGS (T J = 25 C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note ) (T J = 40 to C, Sine Wave, 50 to 60 Hz; Gate Open) MCR03 MCR04 MCR06 MCR08 V DRM, V RRM On-State RMS Current, (T C = 80 C) 80 Conduction Angles I T(RMS) 0.8 A Peak Non-Repetitive Surge Current, (/2 Cycle, Sine Wave, 60 Hz, T J = 25 C) I TSM A Circuit Fusing Consideration, (t = 8.3 ms) I 2 t 0.45 A 2 s Forward Peak Gate Power, (T A = 25 C, Pulse Width.0 s) P GM 0. W Forward Average Gate Power, (T A = 25 C, t = 8.3 ms) P G(AV) 0. W Forward Peak Gate Current, (T A = 25 C, Pulse Width.0 s) I GM.0 A Reverse Peak Gate Voltage, (T A = 25 C, Pulse Width.0 s) V GRM 5.0 V Operating Rate V RRM and V DRM T J 40 to C Storage Temperature Range T stg 40 to 50 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. V
3 MCR0 Series THERMAL CHARACTERISTICS Thermal Resistance,JunctiontoCase JunctiontoAmbient Lead Solder Temperature ( /6 from case, secs max) Characteristic Symbol Max Unit R JC 75 R JA 200 C/W T L 260 C ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 2) T C = 25 C (V D = Rated V DRM and V RRM ; R GK = k ) T C = C ON CHARACTERISTICS Peak Forward OnState Voltage * (I TM =.0 A T A = 25 C) Gate Trigger Current (Continuous dc) (Note 3) T C = 25 C (V AK = 7.0 Vdc, R L = 0 ) Holding Current (2) T C = 25 C (V AK = 7.0 Vdc, Initiating Current = 20 ma) T C = 40 C Latch Current T C = 25 C (V AK = 7.0 V, Ig = 200 A) T C = 40 C Gate Trigger Voltage (Continuous dc) (Note 3) T C = 25 C (V AK = 7.0 Vdc, R L = 0 ) T C = 40 C I DRM, I RRM 0 V TM.7 V A I GT A I H I L V GT ma ma V DYNAMIC CHARACTERISTICS Critical Rate of Rise of OffState Voltage (V D = Rated V DRM, Exponential Waveform, R GK = 00,T J = C) Critical Rate of Rise of OnState Current (I PK = 20 A; Pw = sec; dig/dt = A/ sec, Igt = 20 ma) *Indicates Pulse Test: Pulse Width.0 ms, Duty Cycle %. 2. R GK = 00 included in measurement. 3. Does not include R GK in measurement. dv/dt V/ s di/dt 50 A/ s Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak on State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode
4 MCR0 Series 0.0 GATE TRIGGER CURRENT ( A) GATE TRIGGER VOLTAGE (VOLTS) Figure. Typical Gate Trigger Current versus Figure 2. Typical Gate Trigger Voltage versus HOLDING CURRENT ( A) 0 LATCHING CURRENT ( A) Figure 3. Typical Holding Current versus Figure 4. Typical Latching Current versus TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) DC I T(RMS), RMS ON-STATE CURRENT (AMPS) IT, INSTANTANEOUS ONSTATE CURRENT (AMPS) T J = 25 C T J = C V T, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Figure 5. Typical RMS Current Derating Figure 6. Typical OnState Characteristics
5 MCR0 Series TO92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL H2A H2A H2B H2B H W2 H4 H5 L L H W W T T F F2 T2 P2 P2 P P Figure 7. Device Positioning on Tape D Specification Inches Millimeter Symbol Item Min Max Min Max D Tape Feedhole Diameter D2 Component Lead Thickness Dimension F, F2 Component Lead Pitch H Bottom of Component to Seating Plane H Feedhole Location H2A Deflection Left or Right H2B Deflection Front or Rear H4 Feedhole to Bottom of Component H5 Feedhole to Seating Plane L Defective Unit Clipped Dimension L Lead Wire Enclosure P Feedhole Pitch P Feedhole Center to Center Lead P2 First Lead Spacing Dimension T Adhesive Tape Thickness T Overall Taped Package Thickness T2 Carrier Strip Thickness W Carrier Strip Width W Adhesive Tape Width W2 Adhesive Tape Position NOTES:. Maximum alignment deviation between leads not to be greater than 0.2 mm. 2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of mm. 3. Component lead to tape adhesion must meet the pull test requirements. 4. Maximum noncumulative variation between tape feed holes shall not exceed mm in 20 pitches. 5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive. 6. No more than consecutive missing component is permitted. 7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component. 8. Splices will not interfere with the sprocket feed holes.
6 MCR0 Series PACKAGE DIMENSIONS TO92 (TO226) CASE 029 ISSUE AL SEATING PLANE R A X X H V N G P N B L K C D J SECTION XX NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D G H J K L N P R V STYLE : PIN. CATHODE 2. GATE 3. ANODE
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MAC6D, MAC6M, MAC6N Triacs Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.
More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6V I T(RMS) = 4 A I TSM = 4 A I GT = 5mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 4A) Gate Trigger Current : 5mA High commutation
More informationTeccor brand Thyristors Silicon Controlled Rectifiers
Sx02xS EV Series Amp Sensitive SCR Description New Amp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. All SCR s junctions are
More informationMARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
More informationReverse Blocking Thyristors
Preferred Device Reverse Blocking Thyristors Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Glass Passivated Junctions
More informationS1VM02600A TO-92 (TO-226AA) SCRs 1.5 AMPERES RMS 600 VOLTS. Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors FEATURES
LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 6 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic
More informationSymbol Parameter Conditions Ratings Unit. 600 V Sine wave, 50/60Hz, Gate open V RRM Repetitive Peak Reverse Voltage 600 V I T(AV)
3 Quadrants Standard TRIAC V DRM = 6 V I T(RMS) = 5 A I TSM = 6 A I GT = 35mA FEATURES Repetitive Peak Off-State Voltage : 6V R.M.S On State Current (I T(RMS) = 5A) Gate Trigger Current : 35mA High commutation
More informationMKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
More informationSamples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV) Average on-state current T C
Sxx40x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
More informationTeccor brand Thyristors 12 Amp Standard SCR. Symbol Parameter Test Conditions SRR6012x1 Unit I T(RMS) RMS on-state current T C
RoHS Description Excellent unidirectional switches for phase control and general switching applications such as heating, motor control controls, converters / rectifiers and capacitive discharge ignitions.
More information2N6027, 2N6028. Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers. PUTs 40 VOLTS 300 mw
Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers Designed to enable the engineer to program unijunction characteristics such as R BB, η, I V, and I P by
More informationTeccor brand Thyristors 40 Amp Low T q SCR. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV)
RoHS Description The S4040xQx series of s offer fast turn-off time (tq) characteristics required for applications such as power inverters, switching regulator, and high frequency pulse circuits. These
More informationTeccor brand Thyristors EV Series 0.8 Amp Sensitive Triacs
LX8 Series RoHS Description New 0.8 Amp bi-directional solid state switch series offering direct interface to microprocessor drivers in economical TO-92 and surface mount packages. The die voltage blocking
More informationThyristors Surface Mount 120V - 240V > MKP1V120 Series. Description. Features. Strobes and Flashers. Ignitors. High Voltage Regulators
MKP1V120 Series Pb Description Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches from a blocking state
More informationFeatures. Samples. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. = 2 x I GT. Peak gate current t p. = 10 μs T J
L01 Series RoHS Description New 1 Amp bi-directional solid state switch series offering direct interface to microprocessor drivers in economical TO-92 and surface mount packages. The die voltage blocking
More informationPINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
More informationMBR2045CT, MBRF2045CT. SWITCHMODE Power Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 45 VOLTS
SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175 C Operating Junction Temperature 2 A Total ( A Per Diode Leg) PbFree Package
More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
More informationTICP106 SERIES SILICON CONTROLLED RECTIFIERS
Copyright 997, Power Innovations Limited, UK A Continuous On-State Current 5 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage G A K LP PACKAGE (TOP VIEW) Max I GT of 00 µa MDCAA
More informationDescription. Features & Benefits. RoHS compliant Glass passivated junctions. Applications. Additional Information. Datasheet
Sx01E & SxN1 Series RoHS Description Excellent for lower current heat, lamp, and audible alarm controls for home goods. Standard phase control SCRs are triggered with few milliamperes of current at less
More informationT12M5T-B SERIES TRIACS 12 AMPERES RMS 600 VOLTS. Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES TO-220AB MECHANICAL DATA
LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 2 AMPERES RMS 600 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and other Blocking Voltage to
More informationSilicon Bidirectional Thyristors
Preferred Device Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Blocking Voltage to
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high
More informationQJxx16xHx Series. Thyristors 16 Amp High Temperature Alternistor Triacs. RoHS. Description
RoHS Description This 16A high temperature alternistor triac solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
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