TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS
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1 TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general purpose switching and amplifier applications. Features DC Current ain h FE = 20 I C =.0 dc Collector Emitter Saturation Voltage V CE(sat) = 1.1 Vdc I C =.0 dc Excellent Safe Operating rea These are Pb Free Devices* 15 MPERE POWER TRNSISTORS COMPLEMENTRY SILICON 60 VOLTS, 90 WTTS MXIMUM RTINS Rating Symbol Value Unit Collector Emitter Voltage V CEO 60 Vdc Collector Emitter Voltage V CER 70 Vdc Collector Base Voltage V CB 100 Vdc Emitter Base Voltage V EB 7.0 Vdc Collector Current Continuous I C 1 5 dc Base Current I B 7.0 dc Total Power T C = 25 C Derate above 25 C P D W W/ C CSE 30D STYLE 1 CSE 30L STYLE 3 Operating and Storage Junction Temperature Range T J, T stg 65 to C THERML CHRCTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC 1.39 C/W Thermal Resistance, Junction to mbient R J 35.7 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: Effective June 2012 this device will be available only in the package. Reference FPCN# ORDERIN INFORMTION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. * 1
2 MRKIN DIRMS TO BSE YWW 2 COLLECTOR 3 EMITTER YWW 1 BSE 3 EMITTER 2 COLLECTOR Y WW = Device Code = ssembly Location = Year = Work Week = Pb Free Package ORDERIN INFORMTION Device Package Shipping TIP3055 TIP2955 TIP3055 TIP2955 2
3 ELECTRICL CHRCTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Î Max Unit OFF CHRCTERISTICS Collector Emitter Sustaining Voltage (Note 1) V CEO(sus) Î (I C = 30 mdc, I B = 0) ÎÎ 60 Î Vdc I CER Î 1.0 mdc (V CE = 70 Vdc, R BE = 100 Ohms) Î I (V CE = 30 Vdc, I B = 0) CEO Î 0.7 mdc Î I CEV Î (V CE = 100 Vdc, V BE(off) = 1.5 Vdc) ÎÎ 5.0 mdc Î Emitter Cutoff Current I EBO Î 5.0 mdc (V BE = 7.0 Vdc, I C = 0) ON CHRCTERISTICS (Note 1) DC Current ain h (I C =.0 dc, V CE =.0 Vdc) FE Î (I C = 10 dc, V CE =.0 Vdc) ÎÎ Î Collector Emitter Saturation Voltage V CE(sat) Vdc (I C =.0 dc, I B = 00 mdc) (I C = 10 dc, I B = 3.3 dc) ÎÎ 1.1 Î 3.0 Î Î Base Emitter On Voltage V BE(on) 1.8 Vdc (I C =.0 dc, V CE =.0 Vdc) ÎÎ SECOND BREKDOWN Second Breakdown Collector Current with Base Forward Biased I s/b 3.0 Î dc (V CE = 30 Vdc, t = 1.0 s; Nonrepetitive) ÎÎ DYNMIC CHRCTERISTICS Current ain Bandwidth Product f (I C = 0.5 dc, V CE = 10 Vdc, f = 1.0 MHz) T 2.5 Î MHz Î Small Signal Current ain h fe 15 (V CE =.0 Vdc, I C = 1.0 dc, f = 1.0 khz) ÎÎ khz NOTE: For additional design curves, refer to electrical characteristics curves of 2N Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 3
4 1000 hfe, DC CURRENT IN 100 V CE =.0 V T J = 25 C TIP3055 TIP I C, COLLECTOR CURRENT (MP) Figure 1. DC Current ain IC, COLLECTOR CURRENT (MPS) SECONDRY BREKDOWN LIMIT BONDIN WIRE LIMIT THERML T C = 25 C T J = 150 C dc 1.0 ms 10 ms 0 60 V CE, COLLECTOR-EMITTER VOLTE (VOLTS) 300 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on T C = 25 C; T J(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature. Figure 2. Maximum Rated Forward Bias Safe Operating rea
5 PCKE DIMENSIONS CSE 30D 02 ISSUE E B Q E C NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y1.5M, CONTROLLIN DIMENSION: MILLIMETER. K S L U V D J H MILLIMETERS INCHES DIM MIN MX MIN MX B C D E H J K REF REF L Q S U.00 REF REF V 1.75 REF STYLE 1: PIN 1. BSE 2. COLLECTOR 3. EMITTER. COLLECTOR CSE 30L 02 ISSUE F N K F 2 PL B U L P Y W J D 3 PL 0.25 (0.010) M Y Q S C T E H Q 0.63 (0.025) M T B M NOTES: 1. DIMENSIONIN ND TOLERNCIN PER NSI Y1.5M, CONTROLLIN DIMENSION: MILLIMETER. MILLIMETERS INCHES DIM MIN MX MIN MX B C D E F BSC BSC H J K L N P Q U 6.15 BSC 0.22 BSC W STYLE 3: PIN 1. BSE 2. COLLECTOR 3. EMITTER. COLLECTOR 5
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NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
Preferred Devices NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors
2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain
TIP2955 PNP SILICON POWER TRANSISTOR
Designed for Complementary Use with the TIP3055 Series 90 W at 5 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available B C SOT-93 PACKAGE (TOP VIEW) 1 E 3 Pin is
UMC2NT1, UMC3NT1, UMC5NT1
UMCNT, UMC3NT, UMC5NT Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor
7X = Device Marking. Symbol
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
Bias Resistor Transistor
SEMICONDUCTOR TECHNICAL DATA DTC ~ 8 DTC ~ / /7 DTC / Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed
General Purpose Transistor
General Purpose Transistor Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive
2N6054/2N6056 Darlington Transistors
Features: General-purpose power amplifier and low frequency switching applications. Low Collector-Emitter Saturation Voltage - V CE(SAT) = 2.0V (Maximum) at I C = 4.0A = 3.0V (Maximum) at I C = 8.0A Monolithic
MJ15003, MJ A Complementary Power Transistors
The MJ15003 and MJ15004 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators and other linear applications. Features: High Power
BU323Z. NPN Silicon Power Darlington. High Voltage Autoprotected 10 AMPERE DARLINGTON AUTOPROTECTED VOLTS CLAMP, 150 WATTS
NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, highvoltage power Darlington with a builtin active zener clamping circuit. This device is specifically designed
2N3055A MJ AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS
... PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series
BC856BDW1T1G, BC857BDW1T1G Series, BC858CDW1T1G Series Preferred Devices Dual General Purpose Transistors PNP Duals These transistors are designed for general purpose amplifier applications. They are housed
Darlington Transistors
Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS
Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
25 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 200 WATTS MAXIMUM RATINGS (1) THERMAL CHARACTERISTICS
... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage V CE(sat) = 1.0 Vdc, (max) at I C = 15 Adc Low Leakage Current I CEX = 1.0 madc (max)
MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 100 VOLTS, 15 WATTS
MJE24G (NPN), MJE25G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
TIP120, 121, 122, 125, 126, 127 Darlington Transistors
Features: Designed for general-purpose amplifier and low speed switching applications. Collector-Emitter sustaining voltage-v CEO(sus) = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126 100V
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5
NSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.