SIDACtor Protection Thyristors Broadband Optimized TM Protection. SEP Biased Series - 5x6 QFN. Description
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1 Phillip Havens Oct 2008 SIDCtor Protection Thyristors SEP Biased Series - 5x6 QN RoHS Pb e3 Description gency pprovals gency Pinout Designation Line in Ground Line in Schematic Symbol Line In (1 -Bias (2 Ground (3 Line In (4 Electrical Characteristics gency ile Number E Line out - Bias Bias 3 6 Ground 4 5 Line out (8 Line Out (7 +Bias (6 Ground (5 Line Out The new SEP (SIDCtor Thyristor Ethernet/PoE Protector series has a surge rating compatible with GR1089 inter-building and ITU K.20/21 Enhanced protection requirements. Targeted for high-speed applications such as 10BaseT, 100BaseT, and 1000BaseT, the SEP series maintains signal quality while providing robust protection for Ethernet and PoE applications. This latest silicon design innovation results in a capacitive loading characteristic that is constant with respect to the voltage across the component. This reduces distortion caused by typical solid-state protection solutions. Offered in a surface-mount, QN package, the SEP provides small package size without sacrificing power and surge handling capabilities. eatures & Benefits Compatible with 1000Base-T Balanced overvoltage protection Low distortion Low insertion loss Low profile SO-8 footprint compatible pplicable Global Standards TI-968- TI-968-B ITU K.20/21 Enhanced Level ITU K.20/21 Basic Level IEC nd edition GR 1089 Inter-building ails short circuit when surged in excess of ratings RoHS Compliant and Halogen-ree Pb-free E3 means 2nd level interconnect is Pb-free and the terminal finish material is tin(sn (IPC/JEDEC J-STD GR 1089 Intra-building YD/T 1082 YD/T 993 YD/T 950 Class 4/5 compliance of IEC V Part Number Marking I DRM =5µ I V I S H S I T = T 2.2mps V min V max m min m max max V max SEP0080Q38BB SEP-8B SEP0640Q38BB SEP06B SEP0720Q38BB SEP07B SEP0900Q38BB SEP09B Notes: - bsolute maximum ratings measured at T = 25ºC (unless otherwise noted. - Components are bidirectional (unless otherwise noted. dditional Information Capacitance See Capacitance vs. Bias Voltage Graph Datasheet Resources Samples
2 SIDCtor Protection Thyristors 50/60 Hz Ratings Parameter Name Test Conditions Value Units 0.5s 6.5 I TSM Maximum non-repetitive on-state current, 50/60 Hz 1s 4.6 2s 3.4 5s s s 0.73 Surge Ratings Series I PP 2x10µs 1.2/50µs-8/20µs 10/700-5/310µs 10x1000µs 600V RMS 1 cycle I TSM min min min min RMS B C Notes: - Peak pulse current rating (I PP is repetitive and guaranteed for the life of the product as long as it returns to 25C between surges - I PP ratings applicable over temperature range of -40ºC to +85ºC - The components must initially be in thermal equilibrium with -40 C < T J < +150 C Thermal Considerations Package Symbol Parameter Value Unit T J Junction Temperature -40 to +150 C T STG Storage Temperature Range -40 to +150 C 5x6 QN R 0J Thermal Resistance: Junction to mbient 100 C/W V-I Characteristics Capacitance vs. Bias Voltage* +I I T 30 Bias Voltage 0V 3.3V -V I S I DRM V T V DRM V S +V Capacitance (p V 24V 50V 12V 30V -I Line Voltage (V * Bias voltage must be lower than V DRM
3 Temperature SIDCtor Protection Thyristors Normalized V S Change vs. Junction Temperature Normalized DC Holding Current vs. Case Temperature Percent of V S Change % C C Junction Temperature (T J C (T C = 25ºC Ratio of Case Temperature (T C - ºC Soldering Parameters Reflow Condition Pb-ree assembly (see ig. 1 - Temperature Min (T s(min +150 C Pre Heat - Temperature Max (T s(max +200 C - Time (Min to Max (t s secs. verage ramp up rate (Liquidus Temp (T L to peak 3 C/sec. Max. T S(max to T L - Ramp-up Rate 3 C/sec. Max. Reflow - Temperature (T L (Liquidus +217 C - Temperature (t L secs. T P T L T S(max T S(min Preheat t S igure 1 Ramp-up t P t L Critical Zone TL to TP Ramp-down Peak Temp (T P Time within 5 C of actual Peak Temp (t p Ramp-down Rate Time 25 C to Peak Temp (T P Do not exceed +260(+0/-5 C 30 secs. Max. 6 C/sec. Max. 8 min. Max C 25 time to peak temperature (t 25ºC to peak Environmental Specifications Time Physical Specifications Lead Material Terminal inish Body Material Copper lloy 100% Matte-Tin Plated UL Recognized compound meeting flammability rating V-0 High Temp Voltage Blocking Temp Cycling Biased Temp & Humidity High Temp Storage Low Temp Storage Thermal Shock Resistance to Solder Heat Moisture Sensitivity Level 80% Rated V DRM (V C Peak +125 C or +150 C, 504 or 1008 hrs. MIL-STD-750 (Method 1040 JEDEC, JESD C to +150 C, 15 min. dwell, 10 up to 100 cycles. MIL-STD-750 (Method 1051 EI/JEDEC, JESD V DC (+85 C 85%RH, 504 up to 1008 hrs. EI/ JEDEC, JESD C 1008 hrs. MIL-STD-750 (Method 1031 JEDEC, JESD C, 1008 hrs. 0 C to +100 C, 5 min. dwell, 10 sec. transfer, 10 cycles. MIL-STD-750 (Method 1056 JEDEC, JESD C, 30 secs. MIL-STD-750 (Method %RH, +85 C, 168 hrs., 3 reflow cycles (+260 C Peak. JEDEC-J-STD-020, Level 1
4 SIDCtor Protection Thyristors Dimensions 5x6 QN Dimension Inches Millimeters Min Max Min Max B I D H K L B C J D (RE PIN 1 INDICTOR C G (RE.0200 E I G PIN 1 & 8: LINE IN / LINE OUT PIN 2: BIS (- PIN 3 & 6: GROUND CONNECTIONS PIN 4 & 5: LINE IN / LINE OUT PIN 7: BIS (+ 5x6 QN Solder Pad Layout.0500 E G H I J K L Part Numbering Part Marking SEP xxx 0 Q38 C B TYPE SIDCtor Ethernet Protector MEDIN VOLTGE BISED I PP RTING XXXXXX XXXXX Part Marking Code (Refer to Electrical Characteristics Table Date Code CONSTRUCTION VRIBLE PCKGE Packing Options Package Type Description Quantity dded Suffix Industry Standard Q38 5x6x1.5 QN Tape and Reel 4,000 N / EI-481-D
5 SIDCtor Protection Thyristors Tape and Reel Specifications 5x6 QN Reel Dimension T W0 D Tape Leader and Trailer Dimensions END TRILER 160mm MIN D0 B Tape Dimension Items C CRRIER TPE W1 N COVER TPE LEDER 400mm MIN CRRIER TPE P0 E1 D1 P2 B0 STRT PIN 1 MRK THIS SIDE E2 W Symbols Description Inches Millimeters Min Max Min Max Reel Diameter N/ N/ B Drive Spoke Width N/ 1.50 N/ C rbor Hole Diameter D Drive Spoke Diameter N/ N/ N Hub Diameter N/ N/ W 1 Reel Inner Width at Hub Pocket Width at Bottom B 0 Pocket Length at Bottom D 0 eed Hole Diameter D 1 Pocket Hole Diameter N/ 1.50 N/ E 1 eed Hole Position E 2 eed Hole Position eed Hole Center - Pocket Hole Center K 0 Pocket Depth P 0 eed Hole Pitch P 1 Component Spacing eed Hole Center - P 2 Pocket Hole Center T Carrier Tape Thickness W Embossed Carrier Tape Width W 0 Cover Tape Width K0 COVER TPE P1 0 Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at
SIDACtor Protection Thyristors Broadband Optimized TM Protection. SEP Biased Series - 5x6 QFN. Description
Phillip Havens Oct 2008 SIDCtor Protection Thyristors SEP Biased Series - 5x6 QN RoHS Pb e3 Description gency pprovals gency gency ile Number The new SEP (SIDCtor Thyristor Ethernet/PoE Protector series
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, Single Port, ± polarity tracking SLIC protector RoHS Pb e3 Description gency pprovals gency Pinout gency File Number E133083 This single port polarity programmable protector is specifically designed
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*RoHS COMPLIANT A5050 E075 Features Superior circuit protection Overcurrent and overvoltage protection Blocks surges up to rated limits High speed performance Small SMT package Agency recognition: Applications
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Axial Leaded 6W > P6KE series RoHS Pb Description The is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
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Features -3V/-3, =46mΩ (typ.) @ V GS =-1V =55mΩ (typ.) @ V GS =-4.5V =79mΩ (typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices
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N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
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Description The 1.5SMC series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Uni-directional
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More informationFeatures. N-Channel Enhancement Mode MOSFET 40V/57A, R DS(ON) =10V
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*RoHS COMPLIANT U80L Features n Low capacitance n Low distortion n Surge protection n RoHS compliant* Applications n G.Fast equipment n xdsl modems and line cards TISP4G024LW G.Fast VDSL Protector General
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5KP-HRA Series RoHS Pb e3 AGENCY Uni-directional Agency Approvals AGENCY FILE NUMBER E28662/E2353 Parameter Symbol Value Unit Peak Pulse Power Dissipation by /μs Test Waveform (Fig.2) (Note ) P PPM 5 W
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