Features. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET
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1 Dual N-Channel Enhancement Mode MOSFET Features Pin Description 60V/5, R DS(ON) = V R DS(ON) = 4.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) D DD2 D2 S GS2 G2 Top View of SOP 8 (8) (7) (6) (5) D D D2 D2 pplications Power Management in DC/DC Converter, DC/C Inverter Systems. (2) G (4) G2 Ordering and Marking Information S S2 () (3) N-Channel MOSFET PM9946 PM9946 K : PM9946 XXXXX ssembly Material Handling Code Temperature Range Package Code Package Code K : SOP-8 Operating Junction Temperature Range C : -55 to 50 o C Handling Code TR : Tape & Reel ssembly Material G : Halogen and Lead Free Device XXXXX - Date Code Note: NPEC lead-free products contain molding compounds/die attach materials and 0% matte tin plate termination finish; which are fully compliant with RoHS. NPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-020C for MSL classification at lead-free peak reflow temperature. NPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 500ppm by weight). NPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 bsolute Maximum Ratings (T = 25 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage 60 S Gate-Source Voltage ±25 V I D * Continuous Drain Current 5 =V I DM * Pulsed Drain Current 20 I S * Diode Continuous Forward Current 2.5 T J Maximum Junction Temperature 50 T STG Storage Temperature Range -55 to 50 C P D * Maximum Power Dissipation T =25 C 2 T =0 C 0.8 W R θj * Thermal Resistance-Junction to mbient 62.5 C/W Note : *Surface Mounted on in 2 pad area, t sec. Electrical Characteristics (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions PM9946K Min. Typ. Max. Unit Static Characteristics BV DSS Drain-Source Breakdown Voltage =0V, I DS =250µ V I DSS V DS =48V, =0V - - Zero Gate Voltage Drain Current µ T J =85 C (th) Gate Threshold Voltage V DS =, I DS =250µ 2 3 V I GSS Gate Leakage Current =±20V, V DS =0V - - ±0 n a R DS(ON) a V SD =V, I DS = Drain-Source On-state Resistance mω =4.5V, I DS = Diode Forward Voltage I SD =2, =0V V Gate Charge Characteristics b Q g Total Gate Charge Q gs Gate-Source Charge V DS =30V, =V, I DS = Gate-Drain Charge Q gd nc 2
3 Electrical Characteristics (Cont.) (T = 25 C unless otherwise noted) Symbol Parameter Test Conditions Dynamic Characteristics b PM9946K Min. Typ. Max. R G Gate Resistance =0V,V DS =0V,F=MHz -. - Ω C iss Input Capacitance =0V, C oss Output Capacitance V DS =30V, Reverse Transfer Capacitance Frequency=.0MHz C rss t d(on) Turn-On Delay Time T r Turn-On Rise Time V DD =30V, R L =30Ω, I DS =, V GEN =V, t d(off) Turn-Off Delay Time R G =6Ω Turn-Off Fall Time - 5 T f t rr Reverse Recovery Time ns I SD =5, di SD /dt=0/µs Reverse Recovery Charge nc Q rr Note a : Pulse test ; pulse width 300µs, duty cycle 2%. Note b : Guaranteed by design, not subject to production testing. Unit pf ns 3
4 Typical Operating Characteristics Power Dissipation Drain Current P tot - Power (W).5.0 I D - Drain Current () T =25 o C,V G =V Junction Temperature ( C) - Junction Temperature ( C) I D - Drain Current () Safe Operation rea Rds(on) Limit 300µs ms ms 0ms s DC T =25 o C V DS - Drain - Source Voltage (V) Normalized Transient Thermal Resistance Thermal Transient Impedance Single Pulse 0. Duty = Mounted on in 2 pad R θj :62.5 o C/W E-3 E-4 E Square Wave Pulse Duration (sec) 4
5 Typical Operating Characteristics (Cont.) 20 8 Output Characteristics = 4.5,5,6,7,8,9,V 0 90 Drain-Source On Resistance I D - Drain Current () V V 2 3V R DS(ON) - On - Resistance (mω) = 4.5V =V V DS - Drain-Source Voltage (V) I D - Drain Current () Drain-Source On Resistance Gate Threshold Voltage I D =5.8.6 I DS =250µ R DS(ON) - On - Resistance (mω) Normalized Threshold Voltage Gate - Source Voltage (V) Junction Temperature ( C) 5
6 Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward = V I DS = 5 20 Normalized On Resistance I S - Source Current () =50 o C =25 o C 0.4 R =25 o C: 38mΩ Junction Temperature ( C) V SD - Source - Drain Voltage (V) C - Capacitance (pf) Capacitance 400 Frequency=MHz 200 Ciss Coss Crss Gate - source Voltage (V) V DS =30V I DS = 5 Gate Charge V DS - Drain - Source Voltage (V) Q G - Gate Charge (nc) 6
7 Package Information SOP-8 D SEE VIEW E E h X 45 e b c 2 VIEW L 0.25 GUGE PLNE SETING PLNE S Y M SOP-8 B O L MIN. MX. MIN MX b c D E E e.27 BSC BSC h L MILLIMETERS INCHES Note:. Follow JEDEC MS Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side. 7
8 Carrier Tape & Reel Dimensions OD0 P0 P2 P H E OD B T B0 W F K0 B 0 SECTION - SECTION B-B d T pplication H T C d D W E F MIN..5 MIN MIN SOP-8 P0 P P2 D0 D T 0 B0 K MIN (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel
9 Taping Direction Information SOP-8 USER DIRECTION OF FEED Classification Profile 9
10 Classification Reflow Profiles Profile Feature Sn-Pb Eutectic ssembly Pb-Free ssembly Preheat & Soak Temperature min (T smin) Temperature max (T smax) Time (T smin to T smax) (t s) 0 C 50 C seconds 50 C 200 C seconds verage ramp-up rate (T smax to T P) 3 C/second max. 3 C/second max. Liquidous temperature (T L) Time at liquidous (t L) Peak package body Temperature (T p)* Time (t P)** within 5 C of the specified classification temperature (T c) 83 C seconds 27 C seconds See Classification Temp in table See Classification Temp in table 2 20** seconds 30** seconds verage ramp-down rate (T p to T smax) 6 C/second max. 6 C/second max. Time 25 C to peak temperature 6 minutes max. 8 minutes max. * Tolerance for peak profile Temperature (T p) is defined as a supplier minimum and a user maximum. ** Tolerance for time at peak profile temperature (t p) is defined as a supplier minimum and a user maximum. Table. SnPb Eutectic Process Classification Temperatures (Tc) Package Volume mm 3 Thickness <350 Table 2. Pb-free Process Classification Temperatures (Tc) Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Package Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <.6 mm 260 C 260 C 260 C.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Reliability Test Program Test item Method Description SOLDERBILITY JESD-22, B2 5 Sec, 245 C HOLT JESD-22, 8 00 Hrs, 25 C PCT JESD-22, 2 68 Hrs, 0%RH, 2atm, 2 C TCT JESD-22, Cycles, -65 C~50 C
11 Customer Service npec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : 2F, No., Lane 28, Sec 2 Jhongsing Rd., Sindain City, Taipei County 2346, Taiwan Tel : Fax :
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More informationPackage Code. Handling Code. Assembly Material
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More informationPackage Code. Date Code YYXXX WW
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More informationDate Code Assembly Material
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N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
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Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationApplications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
More informationAPM4953. Features. Pin Description. Applications. Ordering and Marking Information. Absolute Maximum Ratings (T A
Dual P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-4.9A, R DS(ON) = 53mΩ(typ.) @ V GS = -V R DS(ON) = 8mΩ(typ.) @ V GS = -4.5V S 8 Super High Density Cell Design G 7 Reliable and Rugged
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationFeatures. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small
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8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to
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More informationN-Channel Enhancement Mode MOSFET
Features 20V/3A, R DS(ON) =50mΩ(typ.) @ V GS =4.5V Pin Description R DS(ON) =90mΩ(typ.) @ V GS =2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of SOT23-3L
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High Input Voltage, Low Quiescent Current, 150mA LDO Regulator Features Wide Input Voltage Range: 5.4V to 25V Ultra Low Ground Current: 10mA High Output Accuracy: ±2.5% Excellent Load/Line Transient Low
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Direct PWM Variable Speed Fan Motor Driver Features General Description Single Phase Full Wave Fan Driver Low Supply Current Built-In Variable Speed Function Include Hall Bias Circuit Built-In Lock Protection
More informationPackage Code. QF : VTDFN3x3-10 Operating Ambient Temperature Range I : -40 to 105 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range
Three-Phase Sensor-Less Fan Motor Driver Features General Description Three-Phase Full-Wave Sensor-Less Drive Method Adjustable Forced Commutation Frequency (for Start-up) Built-In External PWM Speed Control
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Ultra-Low-Noise, High PSRR, Low-Dropout, 300mA Linear Regulator Features General Description Wide Operating Voltage: 2.5~6V Low Dropout Voltage: 290mV@3V/300mA Fixed Output Voltages: 1.2~3.6V with Step
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1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV
More informationRU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationGeneral Description. Lead Free and Green Device Available (RoHS Compliant) Pin Configuration
Single-Phase digital calibration Motor Pre-Driver for Fan Motor Features General Description Single Phase Fan Pre-Driver Easy digital programming (EDP.) Built-in direct PWM input terminal Built-in soft
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationRU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,
P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating
More informationRU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green
More informationOUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.
Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor
More informationRU30D20H. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. S2 Dual N-Channel MOSFET
N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available
More informationRU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V
P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationV OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationRU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET
N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead
More informationRU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.
P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead
More informationRU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design
More informationRU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A,
RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)
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Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D
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l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
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N-Channel Advanced Power MOSFET MOSFET Features 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%
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N-Channel Advanced Power MOSFET MOSFET Features 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged
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N-Channel Advanced Power MOSFET Features 75V/80A, RDS (ON) =8mΩ (typ.) @VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche
More information60 V GSS Gate-Source Voltage. 175 C T STG Storage Temperature Range. -55 to 175 C I S Diode Continuous Forward Current
N-Channel Advanced Power MOSFET Features 6V/5A, R DS (ON) =mω(typ.)@vgs=v R DS (ON) =2mΩ(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance % avalanche tested Lead Free and Green Devices
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TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
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TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
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N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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Li+ Charger Protection IC Features Input Over-Voltage Protection Programmable Input Over-Current Protection Battery Over-Voltage Protection Over-Temperature Protection High Immunity of False Triggering
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N-Channel Advanced Power MOSFET MOSFET Features 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V I DS =40A Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche
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UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationRU12150R. S N-Channel MOSFET. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. 120V/150A, R DS (ON) =8.5mΩ(Typ.
N-Channel Advanced Power MOSFET Features 2V/5A, R DS (ON) =8.5mΩ(Typ.)@V GS =V Reliable and Rugged % avalanche tested 75 C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant) Pin
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