SIDACtor Protection Thyristors Broadband Optimized TM Protection. MC Multiport Series - MS-013. Description
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- Jared Abraham Hawkins
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1 MC Multiport Series - MS-13 RoHS Pb e3 Description The MC Multiport Series MS-13 are low capacitance SIDCtor thyristors designed to protect broadband equipment from damaging overvoltage transients. The series provides a dual port surface mount solution that enables equipment to comply with various global regulatory standards while limiting the impact to broadband signals. Features and Benefits gency pprovals gency Pinout Designation 1 3 gency File Number E Low voltage overshoot Low on-state voltage Does not degrade surge capability after multiple surge events within limit. Fails short circuit when surged in excess of ratings Two-pair protection % lower capacitance than our Baseband pplicable Global Standards Protectors, for applications that demand greater signal integrity Replaces four discrete components Pb-free E3 means nd level interconnect is Pb-free and the terminal finish material is tin(sn (IPC/JEDEC J-STD- 9.1 Schematic Symbol (T 1 1 (T (G 1 (R (G (R TI-98- TI-98-B ITU K./1/5 Enhanced ITU K./1/5 Basic GR 189 Inter-building GR 189 Intra-building IEC 1--5 nd edition YD/T 18 YD/T 993 YD/T 95 Electrical Characteristics =5µ =. mps Part Number Marking V V V V m min m max max V max Pins 1-, 3-, -5, -5 Pins 1-3, - P8UCMCLxx P8UCMC P3UCMCLxx P3UCMC PUCMCLxx PUCMC P7UCMCLxx P7UCMC P9UCMCLxx P9UCMC P11UCMCLxx P11UCMC P13UCMCLxx P13UCMC bsolute maximum ratings measured at T = 5ºC (unless otherwise noted. - Components are bi-directional. - XX Part Number Suffix: TP (Tube Pack or RP (Reel Pack. See Values Table Table continues on next page.
2 Electrical Characteristics (continued Part Number Marking =5µ =5µ V V V V Pins 1-, 3-, -5, -5 Pins 1-3, =. mps m min m max max V max P15UCMCLxx P15UCMC P18UCMCLxx P18UCMC P3UCMCLxx P3UCMC PUCMCLxx PUCMC P31UCMCLxx P31UCMC P35UCMCLxx P35UCMC See Values Table - bsolute maximum ratings measured at T = 5ºC (unless otherwise noted. - Components are bi-directional. - XX Part Number Suffix: TP (Tube Pack or RP (Reel Pack. Values Part Number pf Pin 1- / 3- (-5 / -5 Tip-Ground, Ring-Ground pf Pin 1-3 (- Tip-Ring MIN MX MIN MX P8UCMCLxx P3UCMCLxx PUCMCLxx P7UCMCLxx P9UCMCLxx P11UCMCLxx P13UCMCLxx 35 P15UCMCLxx P18UCMCLxx P3UCMCLxx PUCMCLxx P31UCMCLxx P35UCMCLXx Note: Off-state capacitance (C O is measured at 1 MHz with a V bias. Surge Ratings I PP Series./31 1 /1 1 8/ 1 1/1 1 1/5 1 5/3 1 1/3 1 1/1 1 5/31 1.5/7 /1 1./5 1/1 1/5 9/7 1/3 1/1 1/7 SM 5/ Hz di/dt min min min min min min min min min min /µs max C Current waveform in µs Voltage waveform in µs - Peak pulse current rating (I PP is repetitive and guaranteed for the life of the product that remains in thermal equilibrium. - I PP ratings applicable over temperature range of -ºC to +85ºC - The component must initially be in thermal equilibrium with - C < T J < +15 C
3 Thermal Considerations Package Symbol Parameter Value Unit Modified MS-13 5 T J Operating Junction Temperature Range - to +15 C T S Storage Temperature Range -5 to +15 C 1 3 R J Thermal Resistance: Junction to mbient C/W V-I Characteristics t r x t d Pulse Waveform -V I DRM +I -I +V IPP Peak Pulse Current %IPP 1 5 t r Peak Value Waveform = t r x t d t d t r = rise time to peak value t d = decay time to half value Half Value t Time (µs Normalized Change vs. Junction Temperature Normalized DC Holding Current vs. Case Temperature. Percent of Change % C Junction Temperature (T J C (T C = 5ºC Ratio of C Case Temperature (T C - ºC dditional Information Datasheet Resources Samples
4 Temperature SIDCtor Protection Thyristors Soldering Parameters Reflow Condition Pb-Free assembly (see Fig. 1 - Temperature Min (T s(min +15 C Pre Heat - Temperature Max (T s(max + C - Time (Min to Max (t s -18 secs. verage ramp up rate (Liquidus Temp (T L to peak 3 C/sec. Max. T S(max to T L - Ramp-up Rate 3 C/sec. Max. Reflow - Temperature (T L (Liquidus +17 C - Temperature (t L -15 secs. T P T L T S(max T S(min Preheat t S Figure 1 Ramp-up t P t L Critical Zone TL to TP Ramp-down Peak Temp (T P Time within 5 C of actual Peak Temp (t p Ramp-down Rate Time 5 C to Peak Temp (T P Do not exceed +(+/-5 C 3 secs. Max. C/sec. Max. 8 min. Max. + C 5 time to peak temperature (t 5ºC to peak Environmental Specifications Time Physical Specifications Lead Material Terminal Finish Body Material Part Numbering TYPE P = SIDCtor MEDIN VOLTGE CONSTRUCTION VRIBLE PCKGE TYPE Copper lloy 1% Matte-Tin Plated UL Recognized epoxy meeting flammability classification V- P xxx UC MC L RP REEL PCK RoHS COMPLINT MC Series I PP RTING High Temp Voltage Blocking Temp Cycling Biased Temp & Humidity High Temp Storage Low Temp Storage Thermal Shock utoclave (Pressure Cooker Test Resistance to Solder Heat Moisture Sensitivity MS-13 Part Marking Drawing_9-3-5.eps Part Marking 8% Rated (V C Peak +15 C or +15 C, 5 or 18 hrs. MIL-STD-75 (Method 1 JEDEC, JESD C to +15 C, 15 min. dwell, 1 up to 1 cycles. MIL-STD-75 (Method 151 EI/JEDEC, JESD-1 5 V DC (+85 C 85%RH, 5 up to 18 hrs. EI/ JEDEC, JESD C 18 hrs. MIL-STD-75 (Method 131 JEDEC, JESD C, 18 hrs. C to +1 C, 5 min. dwell, 1 sec. transfer, 1 cycles. MIL-STD-75 (Method 15 JEDEC, JESD C, 1%RH, atm, up to 18 hrs. EI/ JEDEC, JESD--1 + C, 3 secs. MIL-STD-75 (Method 31 85%RH, +85 C, 18 hrs., 3 reflow cycles (+ C Peak. JEDEC-J-STD-, 1 XXXXXXXXX XXXXX Part Marking Code (Refer to Electrical Characteristics Table Date Code
5 Dimensions MS-13 E Mold Split Line BSC* B C D Pad Outline.5 ( ( (1.5 G F. (11.8 J H Dimension are in inches (and millimeters. Burr Side º MIN Length of Flat K 9º Detail Dimensions Inches Millimeters Min Max Min Max B C D E F G H J K..51 BSC* * BSC = Basic Spacing between Centers Packing Options Package Type Description Quantity dded Suffix Industry Standard Modified MS-13 -pin Tape and Reel Pack 15 RP EI-81-D U Modified MS-13 -pin Tube Pack 5 (5 per tube TP N/ Tape and Reel Specification MS (..3 (1..51 (13. rbor Hole Dia..7 ( (33 Dimensions are in inches (and millimeters.7 (17.8 Direction of Feed Tube Pack Dimensions MS-13 Message Location.5 ( ( ±.5 WLL TYP. (.51 ±.13 (.7.5. ±.3 (58. ±.7.15 (.19 Interior of the Tube.11 ( ( ( (13.3 Dimensions are in inches (and millimeters Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at
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More informationTransient Voltage Suppression Diodes Axial Leaded 1500W > TP1.5KE series. Features 1500 W 6.5 W 200 A 3.5 V. -55 to 150 C. -55 to 175 C 15 C/W 75 C/W
TP.5KE Series RoHS Pb e3 Description The TP.5KE Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
More informationTransient Voltage Suppression Diodes Axial Leaded 5000W > TP5KP series. Features. Bi-directional 5000 W 8.0 W 400 A 3.5 V. -55 to 150 C.
TP5KP Series RoHS Pb e3 Description The TP5KP Series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
More informationSMF4L Series. TVS Diodes Surface Mount 400W > SMF4L Series. Description. Uni-directional
SMF4L Series RoHS Pb e3 Uni-directional Description The SMF4L series of SOD-123FL small and flat lead lowprofile plastic package is designed specifically to protect sensitive electronic equipment from
More informationSMA6L Series. Transient Voltage Suppression Diodes. Surface Mount 600W > SMA6L series
SMA6L Series RoHS Pb e3 Uni-directional Description The SMA6L series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient
More informationTransient Voltage Suppression Diodes Axial Leaded 600W > P6KE series
Axial Leaded 6W > P6KE series RoHS Pb Description The is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.
More informationSurface Mount Transient Voltage Suppressors (TVS)
Description The 1.5SMC series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Uni-directional
More informationAPM8005K. Pin Description. Features. Applications. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 80V/4.
Dual N-Channel Enhancement Mode MOSFET Features Pin Description 80V/4.7A, R DS(ON) =45mΩ (Typ.) @ V GS = 10V R DS(ON) =55mΩ (Typ.) @ V GS = 5V Reliable and Rugged Lead Free and Green Devices Available
More informationPLED Unidirectional Series (PLEDxUx)
(PLEDxUx) PLED Open LED Protectors Agency Approvals Agency Agency File Number E133083 Description The (PLEDxUx Series) open LED protectors provide an electronic switching shunt path around a single LED
More informationFeatures. P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3 R DS(ON) = 56mΩ (typ.) @ V GS = -4.5V R DS(ON) = 85mΩ (typ.) @ V GS = -2.5V R DS(ON) = 135mΩ (typ.) @ V GS = -1.8V Super High Dense Cell
More informationFeatures. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5, R DS(ON) =7.5mΩ (typ.) @ =V R DS(ON) =12mΩ (typ.) @ =4.5V Super High Dense Cell Design Reliable and Rugged valanche Rated D G S Top View
More informationSP1255P Series 0.5pF, 12kV Diode Array for μusb
TVS Diode Arrays (SPA Diodes Low Capacitance ESD and Surge Protection -.pf, 2kV Diode Array for μusb RoHS Pb GREEN Description The SP2P integrates 3 channels of ultra-low capacitance steering diodes and
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -20V/-12.2A, R DS(ON) =-4.5V =-2.5V. = 14mW(max.
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-12.2, = 14mW(max.) @ V GS =-4.5V = 2mW(max.) @ V GS =-2.5V = 32mW(max.) @ V GS =-1.8V Reliable and Rugged Lead Free and Green Devices vailable
More informationGeneral Description. Pin Configuration. Applications. Three-Terminal Low Current Positive Voltage Regulator
Three-Terminal Low Current Positive Voltage Regulator Features Three-Terminal Regulators Maximum Input Voltage : 30V Output Voltages of 5V, 12V Output Current Up to 100m No External Components Internal
More information30KPA-HRA Series. Transient Voltage Suppression Diodes Axial Leaded 30000W > 30KPA-HRA series. Descriptios. Uni-directional
3KPA-HRA Series RoHS Pb e3 AGENCY Uni-directional Agency Approvals Parameter Symbol Value Unit Peak Pulse Power Dissipation by /μs Test Waveform (Fig.2) (Note ) P PPM 3 W Steady State Power Dissipation
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/8A, R DS(ON) = 10V. = V GS = 4.5V Reliable and Rugged
N-Channel Enhancement Mode MOSFET Features Pin Description V/8, R DS(ON) = 29mΩ(max.) @ V GS = V R DS(ON) = 33mΩ(max.) @ V GS = 4.5V Reliable and Rugged G D S Lead Free and Green Devices vailable (RoHS
More informationTVS Diode Arrays (SPA Devices) TVS Diode Arrays. Low Capacitance ESD Protection - SP3012 Series. (SPA Devices) SP3012. SP 3012 xx U T G V * *
TVS Diode rrays (SP Devices) SP312 Series.5pF Diode rray RoHS Pb GRN Description Pinout The SP312 integrates either 4 or 6 channels of ultra low capacitance rail-to-rail diodes and an additional zener
More informationPackage Code S : SOP-8. Date Code YYXXX WW
N-Channel Enhancement Mode MOSFET Features 100 V/8 A R DS(ON) = 20 m Ω (typ.) @ V GS =10V Avalanche Rated Reliable and Rugged Lead Free and Green DevicesAvailable (RoHS Compliant) Pin Description D D D
More informationPackage Code. Handling Code. Assembly Material
P-Channel Enhancement Mode MOSFET Features Pin Description -2V/-4.6, R DS(ON) = 48mW (Max.) @ V GS =-4.5V R DS(ON) = 7mW (Max.) @ V GS =-2.5V R DS(ON) =mw (Max.) @ V GS =-.8V Reliable and Rugged Lead Free
More information5KP-HRA Series. Transient Voltage Suppression Diodes Axial Leaded 5000W > 5KP-HRA series. Description. Uni-directional
5KP-HRA Series RoHS Pb e3 AGENCY Uni-directional Agency Approvals AGENCY FILE NUMBER E28662/E2353 Parameter Symbol Value Unit Peak Pulse Power Dissipation by /μs Test Waveform (Fig.2) (Note ) P PPM 5 W
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 100V/16A, R DS(ON) =10V
N-Channel Enhancement Mode MOSFET Features Pin Description 1V/16, R DS(ON) = 1mW (max.) @ V GS =1V R DS(ON) = 17mW (max.) @ V GS =4.5V ESD Protected Reliable and Rugged Lead Free and Green Devices vailable
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