2SB1202/2SD Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection

Transcription

1 Ordering number : EN11D SB/SD18 SANYO Semiconductors DATA SHEET SB/SD18 Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET and MBIT processes Large current capacitance and wide ASO Low collector-to-emitter saturation voltage Fast switching speed Small and slim package making it easy to make SB/SD18-used sets smaller Specifications ( ): SB Absolute Maximum Ratings at Ta= C PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)6 V Collector-to-Emitter Voltage VCEO (--) V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--) A Collector Current (Pulse) ICP (--)6 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) SBS-E SBT-E SD18S-E SD18T-E SBS-TL-E SBT-TL-E SD18S-TL-E SD18T-TL-E : Base : Collector : Emitter 4 : Collector to : Base : Collector : Emitter 4 : Collector.. SANYO : TP SANYO : TP-FA Product & Package Information Package : TP Package : TP-FA JEITA, JEDEC : SSC-64, TO-1 JEITA, JEDEC : SSC-6, TO- Minimum Packing Quantity : pcs./bag Minimum Packing Quantity : pcs./reel Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection B D18 1 RANK LOT No. RANK LOT No. TL (For PNP, the polarity is reversed.), TKIM/41EA TKIM/4TN (KT)/998HA (KT)/89MO/41KI/4116KI, TS No.11-1/

2 SB/SD18 Continued from preceding page. Parameter Symbol Conditions Ratings Unit Collector Dissipation PC 1 W Tc= C 1 W Junction Temperature Tj C Storage Temperature Tstg -- to + C Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector Cutoff Current ICBO VCB=(--)4V, IE=A (--)1 μa Emitter Cutoff Current IEBO VEB=(--)4V, IC=A (--)1 μa DC Current Gain hfe1 VCE=(--)V, IC=(--)mA * 6* hfe VCE=(--)V, IC=(--)A Gain-Bandwidth Product ft VCE=(--)V, IC=(--)mA MHz Output Capacitance Cob VCB=(--)V, f=1mhz (9) pf Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)A, IB=(--)mA (--.).19 (--.). mv Base-to-Emitter Saturation Voltage VBE(sat) VCE=(--)V, IC=(--)mA (--).94 (--)1. V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)μA, IE=A (--)6 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE= (--) V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)μA, IC=A (--)6 V Turn-On Time ton ns Storage Time tstg See specified Test Circuit. (4)6 ns Fall Time tf ns * : The SB/SD18 are classified by ma hfe as follows : Rank R S T U hfe to 14 to 8 to 4 8 to 6 Switching Time Test Circuit PW=μs D.C. 1% IB1 IB OUTPUT INPUT VR RB RL Ω Ω + + μf 4μF VBE= --V VCC=V IC=IB1= --IB=1A For PNP, the polarity is reversed. Ordering Information Device Package Shipping memo SBS-E TP pcs./bag SBT-E TP pcs./bag SD18S-E TP pcs./bag SD18T-E TP pcs./bag SBS-TL-E TP-FA pcs./reel Pb Free SBT-TL-E TP-FA pcs./reel SD18S-TL-E TP-FA pcs./reel SD18T-TL-E TP-FA pcs./reel No.11-/

3 SB/SD SB IC -- VCE --ma --ma --ma --ma --ma --ma 4 1 SD18 IC -- VCE ma 8mA 6mA 4mA ma ma ma I B = Collector-to-Emitter Voltage, V CE -- V ITR mA --1mA IC -- VCE --ma --8mA --6mA SB I B = Collector-to-Emitter Voltage, V CE -- V ITR9164 IC -- VBE --4mA --ma SB V CE = --V I B = Collector-to-Emitter Voltage, V CE -- V ITR916 IC -- VCE. SD mA ma 6mA ma 4mA ma ma 1mA I B = Collector-to-Emitter Voltage, V CE -- V ITR IC -- VBE SD18 V CE =V Ta= C C -- C Ta= C C -- C Base-to-Emitter Voltage, V BE -- V ITR9166 hfe -- IC SB V CE = --V Base-to-Emitter Voltage, V BE -- V ITR916 hfe -- IC SD18 V CE =V DC Current Gain, h FE Ta= C C -- C DC Current Gain, h FE Ta= C C -- C ITR9168 ITR9169 No.11-/

4 SB/SD18 Gain-Bandwidth Product, ft -- MHz ft -- IC SB V CE = --V Gain-Bandwidth Product, ft -- MHz ft -- IC SD18 V CE =V ITR9 Cob -- VCB SB f=1mhz ITR911 Cob -- VCB SD18 f=1mhz Output Capacitance, Cob -- pf Output Capacitance, Cob -- pf Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv Collector-to-Base Voltage, V CB -- V ITR SB I C / I B = VCE(sat) -- IC Ta= -- C C C Collector-to-Emitter Saturation Voltage, V CE (sat) -- mv 1. Collector-to-Base Voltage, V CB -- V ITR91 VCE(sat) -- IC Ta= -- C C C SD18 I C / IB= Base-to-Emitter Saturation Voltage, V BE (sat) -- V ITR VBE(sat) -- IC Ta= -- C C C SB I C / I B = Base-to-Emitter Saturation Voltage, V BE (sat) -- V ITR91 1. Ta= -- C C C VBE(sat) -- IC SD18 SD166 I C / I B = ITR916 ITR91 No.11-4/

5 SB/SD18 I CP =6A I C =A 1..1 ms A S O DC operation Ta= C DC operation Tc= C ms Tc= C Single pulse.1 For PNP, the minus sign is omitted. 1. Collector-to-Emitter Voltage, V CE -- V ITR918 1ms SB / SD18 Collector Dissipation, P C -- W PC -- Ta SB / SD18 Ideal heat dissipation No heat sink Ambient Temperature, Ta -- C ITR919 No.11-/

6 SB/SD18 Taping Specification SBS-TL-E, SBT-TL-E, SD18S-TL-E, SD18T-TL-E No.11-6/

7 SB/SD18 Outline Drawing Land Pattern Example SBS-TL-E, SBT-TL-E, SD18S-TL-E, SD18T-TL-E Mass (g) Unit.8 * For reference mm Unit: mm No.11-/

8 Bag Packing Specification SBS-E, SBT-E, SD18S-E, SD18T-E SB/SD18 No.11-8/

9 Outline Drawing SBS-E, SBT-E, SD18S-E, SD18T-E SB/SD18 Mass (g) Unit.1 * For reference mm No.11-9/

10 SB/SD18 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc., please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 1. Specifications and information herein are subject to change without notice. PS No.11-/