unit:mm 2009B Tc=25 C V V

Transcription

1 Ordering number:enn9d PNP/NPN Epitaxial Planar Silicon Transistors SA9/SC911 16/14mA High- Switching and AF W Predriver Applications Features Adoption of FBET process. High breakdown voltage. Good linearity of h FE and small C ob. Fast switching speed. Package Dimensions unit:mm 9B [SA9/SC911] ( ) : SA9 Specifications Absolute Maximum at Ta = C Electrical Characteristics at Ta = C Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-, 1 Chome, Ueno, Taito-ku, TOKYO, 1-84 JAPAN -to-base CBO ( )18 CEO ( )16 Emitter-to-Base EBO ( ) Current I C ( )14 ma Current (Pulse) ICP ( ) ma 1 W Dissipation P C Tc= C W Junction Temperature Storage Temperature 1 : Emitter : : Base SANYO : TO-16 Tj Tstg to + C C ollector Cutoff Current I CB O CB = ( )8, IE ( ). 1 µ A E mitter Cutoff Current I EB O EB = ( )4, IC ( ). 1 µ A DC Current Gain h FE CE = ( ), IC= ( )ma * 4* Gain-Bandwidth Product f T CE = ( ), IC= ( )ma MHz Output Capacitance C ob CB = ( ), f=1mhz ( 4.). pf *: The SA9/SC911 are classified by ma h FE as follows : Continued on next page. Rank R S T h FE to 14 to 8 to TN (KT)/198HA (KT)/D1MH/14KI/1KI/O19KI, TS No.9-1/ 1. min typ max C

2 SA9/SC911 Continued from preceding page. Saturation CE(sat) I C = ( )ma, IB=( )ma min typ. (.14) Turn-ON Time ton See. 1 Fall Time t f See. 1 S torage Time t st g Switching Test Circuit max. (.4) See 1. IN kω I B1 I B OUT Ω R B kω + + kω 1µF 1µF -- I C =I B1 =--I B =ma (For PNP, the polarity is reversed.) mA --.ma IC -- CE SA9 --.4mA --.ma --.ma --.1mA , CE ITR1 IC -- BE SA mA.mA.4mA IC -- CE SC911.mA.mA.1mA IB= IB=, CE IC -- BE SC911 ITR Base-to-Emitter, BE ITR Base-to-Emitter, BE ITR4 No.9-/

3 SA9/SC911 Common Emitter DC Current Gain, hfe hfe -- IC SA9 CE =-- Common Emitter DC Current Gain, hfe hfe -- IC SC911 CE = Gain-Bandwidth Product, ft MHz ITR ft -- IC SA9 CE =-- Gain-Bandwidth Product, ft MHz 1. ITR6 SC911 CE = ft -- IC Output Capacitance, Cob pf ITR Cob -- CB SA9 f=1mhz Output Capacitance, Cob pf 1. ITR8 Cob -- CB SC911 f=1mhz Saturation, CE(sat) to-base, CB -- ITR CE(sat) -- IC SA9 I C / I B = Saturation, CE(sat) to-base, CB -- ITR 1..1 CE(sat) -- IC SC911 I C / I B = ITR1 ITR No.9-/

4 SA9/SC BE(sat) -- IC SA9 IC / IB= BE(sat) -- IC SC911 IC / IB= Base-to-Emitter Saturation, BE(sat) --1. Base-to-Emitter Saturation, BE(sat) 1. Current, IC ma Current, IC ma ITR Current, IC ma ITR4 ICP=mA IC=14mA A S O DC operation SA9 / SC911 DC Single pulse (For PNP, minus sign is omitted.), CE ITR 1 PC -- Tc 1s 1ms SA9 / SC911 Dissipation, PC W PC -- Ta No heat sink SA9 / SC Ambient Temperature, Ta C ITR6 Dissipation, PC W Case Temperature, Tc C ITR No.9-4/

5 SA9/SC911 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July,. Specifications and information herein are subject to change without notice. PS No.9-/