Midium Power Transistors (±50V / ±3A)

Transcription

1 Midium Power Transistors (±50V / ±3A) MP6Z3 Structure NPN/PNP Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (Dual) Features ) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B = A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B = A / -50mA) 2) High speed switching Applications Low Frequency Amplifier Driver () Tr. Emitter (2) Tr. Base (3) Tr.2 Collector (4) Tr.2 Emitter (5) Tr.2 Base (6) Tr. Collector (6) (5) (4) () (2) (3) Packaging specifications Package MPT6 Type Code TR Basic ordering unit (pieces) 00 Inner circuit (Unit : mm) (6) (5) (4) Absolute maximum ratings (Ta = 25 C) <Tr.> Symbol Limits Unit Collector-base voltage V CBO 50 V Collector-emitter voltage V CEO 50 V Emitter-base voltage V EBO 6 V Collector current DC I C 3 A Pulsed I CP 6 A () Tr. Emitter (2) Tr. Base (3) Tr.2 Collector (4) Tr.2 Emitter (5) Tr.2 Base (6) Tr. Collector Tr. () (2) (3) Tr.2 <Tr.2> Symbol Limits Unit Collector-base voltage V CBO -50 V Collector-emitter voltage V CEO -50 V Emitter-base voltage V EBO -6 V Collector current DC I C -3 A Pulsed I CP -6 A <Tr. and Tr.2> Symbol Limits Unit Power dissipation P D *2 2.0 W/Total P D *2.4 W/Element Junction temperature T j 50 C Range of storage temperature T stg -55 to 50 C Pw=ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. / Rev.A

2 Electrical characteristics (Ta = ) <Tr.> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BV CEO V I C = ma Collector-base breakdown voltage BV CBO V I C = 0μA Emitter-base breakdown voltage BV EBO V I E = 0μA Collector cut-off current I CBO - - A V CB = 50V Emitter cut-off current I EBO - - A V EB = 4V Collector-emitter staturation voltage V CE(sat) mv I C = A, I B = 50mA DC current gain h FE V CE = 3V, I C = 50mA Collector output capacitance Turn-on time t on * ns Storage time t stg * ns Fall time t *2 f ns Pulsed Transition frequency f T - *2 See switching time test circuit C ob MHz Conditions V CE = V I E =-500mA, f=0mhz pf V CB= V, I E =0A f=mhz I C =.5A, I B = 50mA, I B2 =50mA, V CC ~_ V <Tr.2> Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BV CEO V I C = ma Collector-base breakdown voltage BV CBO V I C = -0μA Emitter-base breakdown voltage BV EBO V I E = -0μA Collector cut-off current I CBO - - A V CB = -50V Emitter cut-off current I EBO - - A V EB = -4V Collector-emitter staturation voltage V CE(sat) mv I C = A, I B = -50mA DC current gain h FE V CE = -3V, I C = -50mA Transition frequency f T MHz V CE= -V I E =500mA, f=0mhz Collector output capacitance C ob pf V CB= -V, I E =0A f=mhz Turn-on time t on * ns I C =.5A, I B = 50mA, Storage time t stg * ns I B2 =50mA, V CC ~_ -V Fall time t f * ns Pulsed *2 See switching time test circuit 2/ Rev.A

3 Electrical characteristic curves (Ta=25 C) Tr. Fig. Typical Output Characteristics 5mA 3.0mA 2.5mA mA 00 Fig.2 DC Current Gain vs. Collector Current ( I ) COLLECTOR CURRENT : I C [A] mA.0mA I B =0.5mA DC CURRENT GAIN : h FE 0 V CE =5V 3V COLECTOR TO EMITTER VOLTAGE :V CE [V] Fig3. DC Current Gain vs. Collector Current ( II ) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) DC CURRENT GAIN : h FE 00 0 V CE =3V COLLECTOR SATURATION VOLTAGE : V CE (sat)[v] I C /I B = Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) Fig.6 Ground Emitter Propagation Characteristics COLLECTOR SATURATION VOLTAGE : V CE (sat)[v] I C /I B = V CE =3V BASE TO EMITTER VOLTAGE : V BE [V] 3/ Rev.A

4 Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain BandwidthProduct vs. Emitter Current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 00 0 Cib Cob f=mhz I E =0A I C =0A TRANSITION FREQUENCY : f T [MHz] 00 0 V CE =V 0. 0 COLLECTOR - BASE VOLTAGE : V CB (V) EMITTER - BASE VOLTAGE : V EB (V) 0 00 EMITTER CURRENT : I E [ma] Fig.9 Safe Operating Area ms COLLECTOR CURRENT : I C [A] DC (Mounted on a ceramic board) ms 0ms When one element operated Single non repetitive pulse COLLECTOR TO EMITTER VOLTAGE : V CE [V] 4/ Rev.A

5 Tr.2 Fig. Typical Output Characteristics -5.0mA -4.0mA -3.0mA mA 00 Fig.2 DC Current Gain vs. Collector Current ( I ) COLLECTOR CURRENT : I C [A] mA.5mA.0mA I B =-0.5mA DC CURRENT GAIN : h FE 0 V CE = -5V -3V COLECTOR TO EMITTER VOLTAGE : V CE [V] Fig.3 DC Current Gain vs. Collector Current ( II ) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) DC CURRENT GAIN : h FE 00 0 V CE = -3V COLLECTOR SATURATION VOLTAGE : V CE (sat)[v] I C /I B = Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) Fig.6 Ground Emitter Propagation Characteristics COLLECTOR SATURATION VOLTAGE : V CE (sat)[v] I C /I B = V CE = -3V BASE TO EMITTER VOLTAGE : V BE [V] 5/ Rev.A

6 Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 00 0 Cib Cob f=mhz I E =0A I C =0A TRANSITION FREQUENCY : f T [MHz] 00 0 V CE = -V COLLECTOR - BASE VOLTAGE : V CB [V] EMITTER - BASE VOLTAGE : V EB [V] 0 00 EMITTER CURRENT : I E [ma] Fig.9 Safe Operating Area - ms ms COLLECTOR CURRENT : I C [A] DC (Mounted on a ceramic board) 0ms When one element operated Single non repetitive pulse COLLECTOR TO EMITTER VOLTAGE : V CE [V] 6/ Rev.A

7 Switching time test circuit <Tr.> R L =6.8Ω V IN I B IC VCC ~_ V IB2 Pw Pw ~_ 50μs DUTY CYCLE % BASE CURRENT WAVEFORM I B I B2 COLLECTOR CURRENT WAVEFORM ton tstg tf 90% I C % <Tr.2> R L =6.8Ω V IN I B Pw I C V CC ~_ -V I B2 Pw ~_ 50μs DUTY CYCLE % I B2 BASE CURRENT WAVEFORM I B t on t stg t f COLLECTOR CURRENT WAVEFORM 90% I C % 7/ Rev.A

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