Silicon Bipolar Low Noise Microwave Transistors
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1 Silicon Bipolar Low Noise Microwave Transistors MP42141 Features Case Styles Low Intrinsic Noise Figure (2.3dB 1.0 GHz) High Power Gain At 1.0 GHz 18.0 db Typical Gold Metalization Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels ION Implanted arsenic Emitter for Consistent Performance Description This NPN Silicon transistor finds applications in low noise and medium power microwave amplifier circuitry. The MP42141 exhibits an excellent noise figure characteristic over the frequency range of.5 to 2 GHz. This transistor also features good high frequency current gain at medium current levels. Applications RF amplifiers and low level oscillators. M-Pulse Microwave 1
2 Absolute Maximum Ratings Collector-Base Voltage V CBO 27 V Collector-Emitter Voltage V CEO 20 V Emitter-Base Voltage V EBO 1.5 V Collector Current I C 50 ma Junction Operating Temperature T j 200 C Storage Temperature Chip or Ceramic Packages Plastic Packages Total Power Dissipation at 25 C -65 C to +200 C -65 C to +125 C 509 Case Style 400 mw 510 Case Style 700 mw 35 Case Style 700 mw Electrical 25 C Parameter of Test Condition Symbol Units MP Chip TO-72 Gain Bandwidth Product V CE = 10 volts f T GHz 4.1 typ Fm =1.0 GHz Ic = 15 ma Insertion Power Gain V CE = 15 volts S 21E 2 db I C = 15 ma f = 1 GHz 13 typ 13 typ 11 typ f = 2 GHz 7 typ 7 min 5 typ Noise Figure V CE = 10 volts NF db I C = 5 ma f = 1 GHz 2.0 typ 2.0 typ 2.3 typ f = 2 GHz 3.4 typ 3.4 typ 3.6 typ Unilateral Gain V CE = 10 volts GTU (max) db I C = 15 ma f = 1 GHz 17 typ 17 typ 14 typ Power Out at 1 db V CE = 10 volts P 1dB dbm Compression I C = 10 ma Z=OPT f = 1 GHz N/A +7 typ +4 typ M-Pulse Microwave 2
3 Electrical 25 C Parameter Condition Symbol Min Typical Max Units Collector Cut-off Current V CB = 10 volts I CBO 100 na I E = 0 µa Emitter Cut-off Current V EB = 1 volt I EBO 1 µa I C = 0 µa Forward Current Gain V CE = 10 volts h FE I C = 5 ma Collector-Base Junction Capacitance V CB = 15 volts f = 1 MHz C CB pf (35) Typical Scattering Parameters MP , V CE = 10 Volts, I C = 5 ma Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle MP , V CE = 15 Volts, I C = 15 ma Frequency S11E S21E S12E S22E (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle M-Pulse Microwave 3
4 M-Pulse Microwave 4
5 Emitter G E Collector Emitter A B F 4 PLCS. Base D H C INCHES MILLIMETERS DIM. MIN. MAX. MIN. MAX. A B C D E F G H TO-72 INCHES MILLIMETERS DIM MIN. MAX. MIN. MAX. A ,89 9,40 B ,11 6,60 C ,00 8,51 D ,02 E ,70 F ,41 0,53 G ,83 5,33 H 89 DEG 91 DEG 89 DEG 91 DEG J ,74 1,09 K 43 DEG 47 DEG 43 DEG 47 DEG L ,71 0,86 M-Pulse Microwave 5
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