MRF581 MRF581G MRF581A MRF581AG
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1 G RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS *G Denotes RoHS Compliant, Pb free Terminal Finish Features Low Noise MHZ Gain at Optimum Noise Figure = MHz Ftau v, 75mA Cost Effective MacroX Package Macro X DESCRIPTION: Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol Parameter MRF581 Unit V CEO Collector-Emitter Voltage Vdc V CBO Collector-Base Voltage 30 Vdc V EBO Emitter-Base Voltage 2.5 Vdc I C Collector Current 200 ma Thermal Data P D Total Device TC = 50ºC Derate above 50ºC P D Total Device TC = 25ºC Derate above 25ºC Watts mw/ ºC Watts mw/ ºC Tstg T Jmax Storage Junction Temperature Range Maximum Junction Temperature -65 to +150 ºC 150 ºC Revision A- December 2008
2 G ELECTRICAL SPECIFICATIONS (Tcase = 25 C) STATIC (off) Symbol Test Conditions BVCEO Collector-Emitter Breakdown Voltage MRF581 (IC = 5.0 madc, IB = 0) Value Min. Typ. Max. Unit Vdc BVCBO BVEBO ICBO IEBO Collector-Base Breakdown Voltage (IC = 1.0 madc, IE = 0) Vdc Emitter-Base Breakdown Voltage (IE = 0.1 madc, IC = 0) Vdc Collector Cutoff Current (VCB = 15 Vdc, VBE = 0 Vdc) ma Emitter Cutoff Current (Vbe = 2.5 Vdc) ma (on) HFE DC Current Gain MRF581 (IC = 50 madc, VCE = 5.0 Vdc) DYNAMIC Symbol COB Ftau Test Conditions Value Min. Typ. Max. Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) pf Current-Gain Bandwidth Product (IC = 75 madc, VCE = 10 Vdc, f = 1.0 GHz) GHz Unit
3 G FUNCTIONAL Symbol NF G NF Test Conditions Value Min. Typ. Max. Noise Figure (50ohms) (IC = 50 madc, VCE = 10 Vdc, f = 0.5 GHz) db Power NFmin (IC = 50 madc, VCE = 10 Vdc, f = 0.5 GHz) db Unit G U max Maximum Unilateral Gain (1) IC = 50 madc, VCE = 10 Vdc, f = 500 MHz db MSG Maximum Stable Gain IC = 50 madc, VCE = 10 Vdc, f = 500 MHz db S 21 2 Insertion Gain IC = 50 madc, VCE = 10 Vdc, f = 500 MHz db Table 1. Common Emitter VCE = 10 V, IC = 50 ma f S11 S21 S12 S22 (MHz) S11 φ S21 φ S12 φ S22 φ
4 G C1, C4, C5, C6, C8, C pf, Chip Capacitor C2, C pf, Johanson Capacitor C7, C10 10 µf, Tantalum Capacitor R1 1.0 kω Res. RFC VK 200, Ferroxcube FB Ferrite Bead, Ferroxcube, /3B TL1, TL7, TL8 Microstrip 0.162, x 0.600, TL2 Microstrip 0.162, x 1.000, TL3 Microstrip 0.162, x 0.800, TL4 Microstrip 0.162, x 0.440, TL5 Microstrip 0.120, x 0.440, TL6 Microstrip 0.120, x 1.160, TL9, TL10 Microstrip 0.025, x 4.250, Board Material , Thick Glass Teflon ε r = 2.55 Figure 1. Minimum Noise Figure and Minimum Noise Figure.
5 G RF Low Power PA, LNA, and General Purpose Discrete Selector Guide Package Device Type GPE Freq (MHz) Pout (watts) GPE (db) Efficiency (%) GPE VCC BVCEO IC max (ma) Packag Device Type Freq (MHz) NF (db) NF IC (ma) NF VCE GN (db) Gu Max (db) Ftau (MHz) Ccb(pF) BVCEO IC max (ma) SO-8 MRF4427, R2 NPN TO-39 2N4427 NPN POWER MACRO MRF553 NPN POWER MACRO MRF553T NPN TO-39 MRF607 NPN TO-39 2N6255 NPN TO-72 2N5179 NPN MACRO X MRF559 NPN MACRO X MRF559 NPN TO-39 2N3866A NPN SO-8 MRF3866, R1, R2 NPN POWER MACRO MRF555 NPN POWER MACRO MRF555T NPN MACRO X MRF559 NPN MACRO X MRF559 NPN SO-8 MRF8372,R1,R2 NPN POWER MACRO MRF557 NPN POWER MACRO MRF557T NPN TO-39 2N5109 NPN TO-39 MRF5943C NPN SO-8 MRF5943, R1, R2 NPN TO-72 2N5179 NPN TO-72 2N2857 NPN TO-39 MRF517 NPN TO-72 MRF904 NPN TO-72 2N6304 NPN MACRO T BFR91 NPN MACRO T BFR96 NPN SO-8 MRF5812, R1, R2 NPN MACRO X NPN Macro BFR90 NPN TO-72 BFY90 NPN TO-72 MRF914 NPN MACRO X MRF581 NPN TO-39 MRF586 NPN MACRO X MRF951 NPN MACRO X MRF571 NPN MACRO T BFR91 NPN MACRO T BFR90 NPN TO-39 MRF545 PNP TO-39 MRF544 NPN RF (Low Power PA / General Purpose) Selection Guide RF (LNA / General Purpose) Selection Guide Low Cost RF Plastic Package Options Macro T Macro X Power SO-8
6 G PIN 1. COLLECTOR 2. EMITTER 3. BASE 4. EMITTER
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Low Cost SO-8 Plastic Surface Mount Package.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA PHONE: (215) FAX: (215)
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features
2N4427 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS. Features Silicon NPN, To-39 packaged VHF/UHF Transistor
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz CurrentGain Bandwidth Product @ 50mA Power Gain, G PE
2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics Output Power = 1.0 Watt Minimum Gain = 10 db Efficiency = 45%
PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified
ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA
nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Description. Features. 85 Plastic Package
AT-85 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-85 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-85 is
NPN Silicon RF Twin Transistor (with 2 Different Elements) in a 6-pin Lead-less Minimold. Part Number Order Number Quantity Package Supplying Form
Preliminary NPN Silicon RF Twin Transistor (with Different Elements) in a -pin Lead-less Minimold FEATURES Low voltage operation different built-in transistors (SC, SC) : Built-in high gain
PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output
techniques, and gold metalization in the fabrication of this device.
Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42 Features High Output Power: 21. dbm Typical P 1 db at 2. GHz 2.5 dbm Typical P 1 db at 4. GHz High Gain at 1 db Compression:
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41400
Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip Technical Data AT-1 Features Low Noise Figure: 1.6 db Typical at 3. db Typical at. GHz High Associated Gain: 1.5 db Typical at 1.5 db Typical at. GHz
Up to 6 GHz Medium Power Silicon Bipolar Transistor. Technical Data AT Plastic Package
Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-286 Features High Output Power: 2.5 dbm Typical P 1 db at 2. GHz High Gain at 1 db Compression: 13.5 db Typical G 1 db at 2. GHz Low
Silicon Bipolar Low Noise Microwave Transistors
Silicon Bipolar Low Noise Microwave Transistors MP42141 Features Case Styles Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) High Power Gain At 1.0 GHz 18.0 db Typical Gold Metalization Hermetic and
NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 546 547 548 Unit Collector Emitter oltage CEO 65 45 dc Collector Base oltage CBO
AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Data Sheet
AT-86 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-86 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-86 is
UHF POWER TRANSISTOR
NPN SiGe RF TRANSISTOR The is a low cost, NPN medium power SiGe HBT(Hetero-Junction Bipolar Transistor) encapsulated in a plastic SOT-3 SMD package. The can be used as a driver device or an output device,
NPN SILICON HIGH FREQUENCY TRANSISTOR 2.0 ± ± 0.1
FEATURES SMALL PACKAGE STYLE: NE686 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 9 db TYP at GHz HIGH GAIN BANDWIDTH: ft = 13 GHz LOW CURRENT OPERATION DESCRIPTION
LIFETIME BUY LAST ORDER: 25SEP01 LAST SHIP: 26MAR02 MMBR941 MRF947 SERIES. The RF Line SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR91LT1/D The RF Line Designed or use in high gain, low noise small signal ampliiers. This series eatures excellent broadband linearity and is oered
SS8050. V CE =1V, I C =5mA V CE =1V, I C =100mA. 9.0 pf f=1mhz f T Current Gain Bandwidth Product V CE =10V, I C =50mA MHz
SS8050 SS8050 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to Collector Current: I C =.5A Collector Power Dissipation: P C =2W (T C =25 C). Emitter 2. Base 3. Collector
Please call sales office for
NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE SERIES FEATURES HIGH INSERTION GAIN: 8.5 db at 5 MHz LOW NOISE FIGURE:.5 db at 5 MHz HIGH POWER GAIN: db at GHz LARGE DYNAMIC RANGE: 9 dbm at db, GHz Gain
Data Sheet. AT Up to 6 GHz Medium Power Silicon Bipolar Transistor. Features. Description. 100 mil Package. High Output Power:
AT-1 Up to 6 GHz Medium Power Silicon Bipolar Transistor Data Sheet Description Avago s AT-1 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-1 is housed
Part Number Order Number Package Quantity Supplying Form. (Pb-Free)
NESGM NPN SiGe RF Transistor for Low Noise, High-in Amplification Flat-Lead -Pin Thin-Type Super Minimold (M) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications.
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 5 MHz. Guaranteed
PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters
PD Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF26/D The RF Sub Micron Bipolar Line The MRF26 and MRF26S are designed for broadband commercial and industrial applications at frequencies from 1 to
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES LOW COST HIGH GAIN BANDWIDTH PRODUCT: ft = MHz TYP LOW COLLECTOR TO BASE TIME CONSTANT: CC r b'b = 5 ps TYP LOW FEEDBACK CAPACITANCE: CRE=.55
NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD
NPN SiGe RF ANALOG INTEGRATED CIRCUIT PA901TU NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD DESCRIPTION The PA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone
DATA SHEET. Embossed tape, 8 mm wide, pin No. 3 (collector) facing the perforation
DATA SHEET SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES Low current consumption and high gain S21e 2 =.5 dbtyp. @,
Surface Mount Low Noise Silicon Bipolar Transistor Chip. Technical Data AT-41411
Surface Mount Low Noise Silicon Bipolar Transistor Chip Technical Data AT-111 Features Low Noise Figure: 1. db Typical at 1. GHz 1.8 db Typical at 2. GHz High Associated Gain: 18. db Typical at 1. GHz
CYStech Electronics Corp.
Page No. : 1/7 PNP Epitaxial Planar Transistor BVCEO -V IC -1A RCE(SAT) 32mΩ(typ.) Features Low VCE(SAT), VCE(SAT)= -.16V (Typ.) @ IC/IB=-5mA/-5mA High breakdown voltage, BVCEO=-V Complementary to BTD1782N3
SD1731 (TH562) RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS. OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS OPTIMIZED FOR SSB 30 MHz 50 VOLTS. EFFICIENCY 40% COMMON EMITTER. GOLD METALLIZATION POUT = 220 W PEP WITH 13 db GAIN.500 4LFL (M174) epoxy sealed ORDER CODE
3 Volt, Low Noise High ft Silicon Transistor. MP4T6310 Series. Features SOT-23. Description SOT-143. Chip
3 Volt, Low Noise High ft Silicon Transistor Features High Performance at VCE = 3V Low Noise Figure at Small Currents (.3- ma) High Gain (14 db) at 1mA Collector Current High ft (14 GHz) Available on Tape
NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (800 mw) 3-PIN POWER MINIMOLD (34 PACKAGE)
NEC's NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (8 mw) 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES THIS PRODUCT IS SUITABLE FOR MEDIUM OUTPUT POWER (8 mw) AMPLIFICATION PO = 29 dbm TYP.
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
NPN SILICON GERMANIUM RF TRANSISTOR NESG331M NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M, 212 PKG) FEATURES The device is an ideal choice for
TO-92 SOT-23 Mark: 3B. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
PN98 Discrete POWER & Signal Technologies MMBT98 C C B E TO-92 SOT-23 Mark: 3B B E This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the.0 ma to 30
DISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 November 1992 DESCRIPTION PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband
Agilent AT Up to 6 GHz Low Noise Silicon Bipolar Transistor Data Sheet
Agilent AT-135 Up to GHz Low Noise Silicon Bipolar Transistor Data Sheet Description Agilent s AT-135 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-135
MCC. 2N5401 )HDWXUHV. PNP Silicon Amplifier Transistor 625mW 0HFKDQLFDO'DWD TO-92
omponents 20736 Marilla Street Chatsworth!"# $%!"# 2N5401 )HDWXUHV Through Hole Package 1 o C Junction Temperature Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR PINS MINI MOLD SILICON TRANSISTOR SC957 FEATURES Low Noise, High Gain Low Voltage Operation Low Feedback Capacitance Cre =
SILICON TRANSISTOR 2SC4227
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DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
DATA SHEET HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD SILICON TRANSISTOR 2SC4226 DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF
NSVF5501SK RF Transistor for Low Noise Amplifier
RF Transistor for Low Noise Amplifier 10 V, 70 ma, f T =. GHz typ. RF Transistor This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because
NEC's NPN SILICON TRANSISTOR. ñ EIAJ 1 REGISTERED NUMBER PACKAGE OUTLINE
FEATURES NEW MINIATURE M PACKAGE: Small transistor outline. X. X. mm Low profile /. mm package height Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: ft = GHz LOW NOISE FIGURE: =.
General Purpose Transistors
General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and
DISCRETE SEMICONDUCTORS DATA SHEET. BFG97 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG)
FEATURES NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (1 W) 3-PIN POWER MINIMOLD (34 PKG) This product is suitable for medium output power
Silicon Bipolar High f T Low Noise Medium Power 12 Volt Transistors
Silicon Bipolar High f T Low Noise Medium Power 1 Volt Transistors Features Low Phase Noise Oscillator Transistor mw Driver Amplifier Transistor Operation to GHz Available as Available in Hermetic Surface
AT General Purpose, Low Current NPN Silicon Bipolar Transistor. Data Sheet
AT-4532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Avago s AT-4532 is a general purpose NPN bipolar transistor that has been optimized for maximum f t at low voltage
DATA SHEET AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
DATA SHEET SILICON TRANSISTOR SC6 AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES High DC Current Gain: hfe = TYP. (VCE = 6. V, IC =. ma) High Voltage: VCEO
NSVF6003SB6/D. RF Transistor 12 V, 150 ma, ft = 7 GHz, NPN Single
NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has
NPN SILICON RF TWIN TRANSISTOR
FEATURES LOW VOLTAGE, LOW CURRENT OPERATION SMALL PACKAGE OUTLINE:. mm x.8 mm LOW HEIGHT PROFILE: Just. mm high TWO LOW NOISE OSCILLATOR TRANSISTORS: NE8 IDEAL FOR - GHz OSCILLATORS DESCRIPTION The contains
TIP120, TIP121, TIP122,
... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage @ 100 madc VCEO(sus) = 60 Vdc
DATA SHEET. NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR SC76 NPN SiGe RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION FLAT-LEAD -PIN THIN-TYPE SUPER MINIMOLD (M) FEATURES Ideal for low noise high-gain amplification
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc
DATA SHEET. BFR93AW NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 18
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 99 File under Discrete Semiconductors, SC4 99 Sep 8 FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini)
DATA SHEET NE67818 / 2SC5752. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mw) 4-PIN SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE67818 / 2SC72 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (6 mw) 4-PIN SUPER MINIMOLD Ideal for medium output power amplification PO
The 2SC4177 is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package
DESCRIPTION FEATURES The is available in SC-70 Package High DC Current Gain Complementary to 2SA1611 High Voltage Available in SC-70 Package ORDERING INFORMATION APPLICATIONS Package Type SC-70 Part Number
DATA SHEET. NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05)
DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD -PIN THIN-TYPE SUPER MINIMOLD (M) FEATURES The device is an ideal choice for low noise,
DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
DATA SHEET FEATURE Ideal for medium-output applications High gain, low noise Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 5 C) PARAMETER SYMBOL RATING UNIT
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
100 Vdc Collector Base Voltage Emitter Base Voltage Collector Current Continuous. Adc Peak. Watts Derate above 25 C. Watts 25 C
... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus) = 100 (Min) MJE243, MJE253 High DC Current Gain @ IC =
Four Transistors Equal Power Each. Watts mw/ C Watts mw/ C TJ, Tstg 55 to +150 C. Characteristic Symbol Min Max Unit
PNP/NPN Silicon Voltage and current are negative for PNP transistors MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCB 40 Vdc Emitter Base Voltage
MJE15028 MJE AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS 50 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS
... designed for use as high frequency drivers in audio amplifiers. DC Current Gain Specified to 4.0 Amperes hfe = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC = 4.0 Adc Collector Emitter Sustaining Voltage
1.0. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.0 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF455/D The RF Line... designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 Volt,
2SC5374A. RF Transistor 10V, 100mA, ft=5.2ghz, NPN Single SMCP. Features. Specifications
Ordering number : ENA19A SC4A RF Transistor 1V, 1mA, ft=.ghz, NPN Single SMCP http://onsemi.com Features High gain : S1e =1.dB typ (f=1ghz) High cut-off frequency : ft=.ghz typ Specifications Absolute
DATA SHEET NE677M04 / 2SC5751. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (30 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD
FEATURES DATA SHEET NPN SILICON RF TRANSISTOR NE677M4 / 2SC71 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (3 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD Ideal for medium output power
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
50 Vdc Collector-Base Voltage VCEO. 50 Vdc Collector Current-Continuous VCBO. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit
MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO
Type Marking Pin Configuration Package BFP520F APs 1=B 2=E 3=C 4=E - - TSFP-4
Low Noise Silicon Bipolar RF Transistor For highest gain and low noise amplifier Outstanding Gms = 22.5 db at 1.8 GHz Minimum noise figure NF min = 0.95 db at 1.8 GHz For oscillators up to 15 GHz Transition
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD. Part Number Quantity Supplying Form
FEATURES NPN SILICON RF TRANSISTOR NE678M4 / 2SC73 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (6 mw) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD Ideal for medium output power amplification
DISCRETE SEMICONDUCTORS DATA SHEET. BFR520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFR File under Discrete Semiconductors, SC4 September 99 BFR FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
1 AMPERE GENERAL PURPOSE POWER TRANSISTORS VOLTS 30 WATTS *MAXIMUM RATINGS THERMAL CHARACTERISTICS (2)
...designed for driver circuits, switching, and amplifier applications. These high performance plastic devices feature: Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp Excellent Power Dissipation
DATA SHEET NE67739 / 2SC5454 NPN EPITAXIAL SILICON TRANSISTOR 4-PIN MINI MOLD PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
FEATURE High gain, low noise Small reverse transfer capacitance Can operate at low voltage ABSOLUTE MAXIMUM RATINGS (TA = 25 C) DATA SHEET PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 9
2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector
TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC6901. Rating Unit C/W
TPC69 TOSHIBA Multi-Chip Transistor Silicon NPN & PNP Epitaxial Type TPC69 High-Speed Switching Applications MOS Gate Drive Applications Unit: mm NPN and PNP transistors are mounted on a compact and slim
MCH5541 PNP/NPN Bipolar Transistor ( )30V, ( )700mA, VCE(sat) ; ( 220)190mV (max)
MCH41 PNP/NPN Bipolar Transistor ( )V, ( )ma, VCE(sat) ; ( )19mV (max) Overview MCH41 is ( )V, ( )ma, VCE(sat) ; ( )19mV (max), PNP/NPN in 1 type MCPH, Bipolar Transistor. Electrical Connection Features
MMBT3906. PNP General Purpose Amplifier
Features Collector current capability IC = -200 ma Collector-emitter voltage VCEO = -40 V RoHS compliant package Application General switching and amplification Mechanical Data Case outline: SOT-23 Packing
30A02CH. Bipolar Transistor 30V, 0.7A, Low VCE(sat) PNP Single CPH3. Applications. Features. Specifications
Ordering number : EN8A ACH Bipolar Transistor V,.A, Low VCE(sat) PNP Single CPH http://onsemi.com Applications Low-frequency Amplifier, high-speed switching, small motor drive Features Large current capacitance
2SB1203/2SD1803. Relay drivers, high-speed inverters, converters, and other general high-current switching applications
Ordering number : EN8C SB/SD8 SANYO Semiconductors DATA SHEET SB/SD8 Applications Relay drivers, high-speed inverters, converters, and other general high-current switching applications Features Low collector-to-emitter
Audio, Dual-Matched NPN Transistor MAT12
Data Sheet FEATURES Very low voltage noise: nv/ Hz maximum at 00 Hz Excellent current gain match: 0.5% typical Low offset voltage (VOS): 200 μv maximum Outstanding offset voltage drift: 0.03 μv/ C typical
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)
2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N540 Unit Collector Emitter Voltage VCEO Collector
Dual General Purpose Transistors
DATA SHEET SEMICONDUCTOR Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT 363/SC 88 which is designed for
BC856-HF Thru. BC858-HF Series (PNP) RoHS Device Halogen Free
-HF Thru. -HF Series (PNP) RoHS Device Halogen Free Features - Ideally suited for automatic insertion - Power dissipation PCM:.25W (@T=25 C) - Low current.(max. 1m) - Collector-base voltage CBO: = -8 =
ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Emitter Base Break
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Sub Micron Bipolar Line Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and
MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage
NPN SILICON RF TRANSISTOR 2SC4703
DATA SHEET NPN SILICON RF TRANSISTOR NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The is designed for low distortion, low noise RF amplifier
NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/502
Available on commercial versions NPN Darlington Power Silicon Transistor Qualified per MIL-PRF-19500/502 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high speed NPN transistor is rated at
DATA SHEET NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD
DATA SHEET NPN SILICON RF TRANSISTOR SC8 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The SC8 is a low supply voltage transistor designed
LMUN2211LT1 SERIES. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD.
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT
NPN SILICON HIGH FREQUENCY TRANSISTOR
NPN SILICON HIGH FREQUENCY TRANSISTOR UPA806T FEATURES SMALL PACKAGE STYLE: NE685 Die in a mm x 1.5 mm package LOW NOISE FIGURE: NF = 1.5 db TYP at GHz HIGH GAIN: S1E = 8.5 db TYP at GHz HIGH GAIN BANDWIDTH:
RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343
Available on commercial versions RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor (also available
TOSHIBA Transistor Silicon PNP Epitaxial Type TPC
TOSHIBA Transistor Silicon PNP Epitaxial Type TPC662 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications Unit: mm High DC current gain: h FE = 2 to 5 (I C =.2 A) Low collector-emitter
HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES
HIGH COLLECTOR TO EMITTER VOLTAGE DARLINGTON TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES PS2532-, -2, -4 PS2532L-, -2, -4 FEATURES HIGH ISOLATION VOLTAGE BV: 5 k Vr.m.s. MIN HIGH COLLECTOR TO EMITTER VOLTAGE
Obsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)